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High-Aspect_Ratio-Etching

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					High-Aspect-Ratio
Etching

Deep Reaction Ion Etching (DRIE) has been an enabling technology available at the Lurie Nanofabrication
Facility for more than a decade that has promoted tremendous advancements in various technologies — most
notably MEMS. The LNF has positioned itself as a leader in advanced deep-silicon etching with the recent
installation of two STS Pegasus etchers in addition to a legacy STS ASE system. These complementary and
redundant systems will keep LNF in the forefront of Bosch silicon processing well into the future.




                                                                               50µm


                               95.2nm

                                                            Key Capabilities
                                        100nm
                                                            n   Sample size up to 150mm wafers
                                                            n   High aspect ratio trenches > 50:1
                                                            n   Features <100nm sidewall roughness < 10nm
                                                            n   Fast etch rates > 13 microns per minute
                                                            n   Smooth wall etches – sidewall roughness
                                                                < 10nm
                                                            n   Stop on buried insulator without footing
                                                            n   Resist selectivity > 160:1
                                                2µm
                                                            n   Oxide selectivity > 500:1
                                                            n   Run to run variance < 5%
                                                            n   Non-uniformity < 5%
                                                            n   Wafer thinning at 4 microns per minute



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                           www.L N F. u m iic h . e d u

				
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posted:10/18/2012
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