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ITRS_presentation_Metrology 2008 Summer Beyond CMOS

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					     Beyond CMOS Metrology

              Alain C. Diebold
College of Nanoscale Science and Engineering
                 U. Albany
                   2008




                     ITRS 2008   1
                      Metrology Roadmap
                             2008
Europe          Thomas Hingst (Qimonda)
                Bart Rijpers (ASML)

Japan           Masahiko Ikeno (Hitachi High-Technologies)
                Eiichi Kawamura (Fujitsu)
                Yuichiro Yamazaki (Toshiba)

Korea
Taiwan

North America   Meredith Beebe (Technos)
                Ben Bunday (ISMI)
                Alain Diebold (CNSE – Univ. Albany)
                Dan Herr (SRC)
                Mike Garner (Intel)
                Steve Knight (NIST)
                Jack Martinez (NIST)
                Dave Seiler (NIST)
                Victor Vartanian (ISMI)

                                ITRS 2008   2
               Beyond CMOS Metrology
    Molecular                 Ferromagnetic                 Spin Logic
    Electronics               Logic Devices                 Devices
Soft Matter Microscopy                          Spin Microscopy

 Molecular Devices                                 Spin Transport
 Excitons in Graphene & CNT                        Spin in Graphene & CNT
                            Graphene Layers




    Measurement of Materials and Structures with Nanoscale Properties
                         Quantum Confinement
                                 Excitons
               Berry Phase Effects : e.g., Carrier Transport
                                    ITRS 2008      3
    New Physical Properties Impact Metrology
            Microscopy at Nanoscale Dimensions :
Defect in Nanowire      Carbon Nanofilm          Spin- Ballistic Emission
                                                  Electron Microscopy




  Korgel, et al.          Horiuchi, et al.             LaBella, et al.


     Band Structure & Optical Properties at low Dimensions :
                      1.2 nm diameter Si NW




                              M.Y. Cho
                                 ITRS 2008   4
Novel Electrical Properties of Graphene
        electron - hole puddles




       Thanks to Charlie Marcus
                         ITRS 2008   5
ERD & ERM/Metrology Collaboration Discussion
   Small geometrical metrologies, obtaining a reasonable
    signal/noise ratio – study, determine, and manage noise
    sources. Extract the signal from noise.
   Issue of contamination of nano-scaled devices
   Time resolved magnetic measurements.
   Ability to perform real time measurements, e.g. phase
    transitions.
   Wide band characterizations of rf devices – above 100
    GHz.
   Challenges For Metrology
       Picoscale measurements across macroscale devices (50 pm vs
        50 cm)
       Lab Instruments vs Manufacturing capabilities

                                 ITRS 2008   6
Conclusions


• ERM and ERD require both improved
  imaging (such as aberration corrected
  TEM) and image simulation
• All measurements affected by nano-
  dimensional properties
• Novel electrical properties require
  advanced electrical measurements



                    ITRS 2008   7
ITRS 2008   8

				
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posted:9/16/2012
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