ASIF KHAN Carolina Distinguished Professor Director, Photonics and Microelectronics Lab Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 Telephone: 803.777-7941 FAX: 803.777-2447 email: email@example.com PROFESSIONAL PREPARATION Massachusetts Institute of Technology PhD 1979 Ph.D., 1979 APPOINTMENTS 2003 – Present Carolina Distinguished Professor (reappointed in 2006) 2001 - 2006 Chairman, Department of Electrical Engineering, University of South Carolina 1997 - Present Professor, Department of Electrical Engineering, Distinguished Professor of Engineering,, and Director of the Photonics and Microelectronics Laboratory 1987 - 1997 Vice-President, APA Optics, Incorporated 1985 - 1987 Production Development/Technical Marketing Manager Minnesota Manufacturing and Mining Company (3M) 1979 - 1985 Senior Principal Research, Scientist Honeywell, Incorporated 1977 - 1978 Visiting Scientist, Optics Section, Corporate Research Center, Honeywell, Inc. PUBLICATIONS “Optical power degradation mechanisms in AlGaN based 280 nm deep ultraviolet light-emitting di- odes on sapphire”, Z. Gong, M. Gaevski, V. Adivarahan, W. Sun, M. Shatalov, M. Asif Khan, APL, vol. 88, 051903-1-3 (2006). “Matrix addressable micro-pixel 280 nm deep UV LED, S. Wu, S. Chhajed, L. Yan, W. Sun, M. Shatalov, V. Adivarahan, M. Asif Khan, JJAP, vol. 45, No. 12 pp. L352-L354 (2006). “Stable 20 W/mm AlGaN-GaN MOSHFET,” G. Simin, V. Adivarahan, J, Yang, A. Koudymov, S. Rai and M. Asif Khan, Electronics Letters, vol. 41, no. 13, p. 774-775 (2005). “Optically Pumped Lasing at 353 nm Using Non-polar AlGaN Multiple Quantum Wells over r-plane Sapphire,” C. Q. Chen, M. Shatalov, E. Koukstis, V. Adivarahan, M. Gaevski, S. Rai, M. A. Khan, JJAP, vol. 43, No. 8B, pp. L1099-L1102 (2004). "Pulsed Atomic Layer Epitaxy of Ultrahigh-Quality AlxGal-xN structures for Deep Ultraviolet Emis- sions below 230 nm", J. P. Zhang M. Asif Khan W. H. Sun, H. M. Wang, C. Q. Chen Q. Fareed, E. Kuokstis J. W. Yang, Applied Physics Letters, v. 81, pp. 4392-4394 (2002). AWARDS AND HONORS IEEE Fellow – 2006 Best Research Paper Award for 2007 by Japanese Applied Physics Society for “Room-temperature stimulated emission from AlN at 214 nm” (awarded 2007) Co-Chair and Plenary Speaker of the 2006 China International Forum on Solid State Lighting, Shen- zhen, China – 2006 Carolina Distinguished Professor – reappointed 2006 Best Research Paper Award for 2004 by Japanese Applied Physics Society for “Continuous Wave Milliwatt Power AlGaN Light-Emitting Diodes at 280 nm” (awarded 2005) Northrop Grumman Silver Supplier Award (awarded 2004) DARPA SUVOS Award for Outstanding Performance - 2003 The Russell Research Award for Science, Math and Engineering 2002 – Dr. Asif Khan Best Invited Paper – Selected for Publication In Advanced Workshop on “Frontiers in Electronics” (WOFE)-02 Proceedings, “Strain Energy band Engineering approach to AlN/GaN/InN Heterojunction Devices” by Asif Khan, J.W. Yang, G. Simin, R. Gaska, and M.S Shur.
Pages to are hidden for
"A. Paul W. Bohn"Please download to view full document