Is Scaling the Correct Approach for Radiation Hardened Conversions by sSO47VQ4

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									    Is Scaling the Correct Approach for Radiation Hardened
       Conversions of Deep Submicron Microprocessors?

    D. Rea, D. Bayles, A. Kazemzadeh, F. Thoma, N. Haddad

 BAE SYSTEMS, 9300 Wellington Road, Manassas, VA 20110
Abstract
The RAD750™ space hardened microprocessor is a fully licensed PowerPC™ that is
identical in architecture, function and operation to the commercial PowerPC 750™
microprocessor. This paper reviews the approaches and challenges learned through
the development of the next generation RAD750 over the traditional radiation hardening
techniques for achieving increased performance in migrating a commercial
microprocessor design from 0.25 m commercial CMOS process to a radiation
hardened 0.15µm technology. BAE SYSTEMS is currently under contract to design and
fabricate 0.15m CMOS RAD750 processor to be fabricated on its modernized foundry.
BAE SYSTEMS is modernizing its radiation hardened semiconductor foundry to support
the technology needs of the next generation of military space, civil space, and
commercial space programs. Utilizing the 0.15 m technology, the RAD750 is projected
to operate at 200 MHz with a 1.5V core supply and 3.3V I/O supply. The device is
expected to be 1 Mrad total dose hard, with SEU immunity to 1E-10 upsets/bit-day and
latch-up immune. We will show that the MIPS performance obtained by a single
dimensional translation is not sufficient to meet the needs of the future DoD and NASA
programs. These goals, however, can be met using a combined approach of one-
dimensional translation and two-dimensional optimization, as well as, new circuit
topologies for implementing radiation hardened logic.

								
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