Is Scaling the Correct Approach for Radiation Hardened Conversions of Deep Submicron Microprocessors? D. Rea, D. Bayles, A. Kazemzadeh, F. Thoma, N. Haddad BAE SYSTEMS, 9300 Wellington Road, Manassas, VA 20110 Abstract The RAD750™ space hardened microprocessor is a fully licensed PowerPC™ that is identical in architecture, function and operation to the commercial PowerPC 750™ microprocessor. This paper reviews the approaches and challenges learned through the development of the next generation RAD750 over the traditional radiation hardening techniques for achieving increased performance in migrating a commercial microprocessor design from 0.25 m commercial CMOS process to a radiation hardened 0.15µm technology. BAE SYSTEMS is currently under contract to design and fabricate 0.15m CMOS RAD750 processor to be fabricated on its modernized foundry. BAE SYSTEMS is modernizing its radiation hardened semiconductor foundry to support the technology needs of the next generation of military space, civil space, and commercial space programs. Utilizing the 0.15 m technology, the RAD750 is projected to operate at 200 MHz with a 1.5V core supply and 3.3V I/O supply. The device is expected to be 1 Mrad total dose hard, with SEU immunity to 1E-10 upsets/bit-day and latch-up immune. We will show that the MIPS performance obtained by a single dimensional translation is not sufficient to meet the needs of the future DoD and NASA programs. These goals, however, can be met using a combined approach of one- dimensional translation and two-dimensional optimization, as well as, new circuit topologies for implementing radiation hardened logic.
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