Borland-22nm__16nm_Node_Junction_Scaling by yvtong

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									22nm & 15nm Node Junction
     Scaling Options
              John Borland
      J.O.B. Technologies, Aiea, HI
            July 15, 2010
Outline
 • Introduction
    – Technology Roadmap Options
 • USJ Technology:
    – p+ USJ 22nm node and beyond
    – n+ USJ 22nm node and beyond
 • Strain Technology
    – pMOS 22nm node and beyond
    – nMOS 22nm node and beyond
 • Summary



   J.O.B. Technologies (Strategic   2
   Marketing, Sales &
   Technology)
Summary of Planar CMOS –vs-FinFET
• VLSI Sym 2008: Planar CMOS to 22nm Node
     – Intel said SRAM needs Bulk FinFET/Trigate at 16nm or Floating Body
       Cell FD-SOI (Mark Bohr)
• IEDM 2008:
     – Intel: Stated that FinFET not ready for 22nm node manufacturing (K.
       Kuhn).
• VLSI Sym 2009:
     – IBM: TC Chen stated at 16nm node body controlled devices (FD-SOI or
       FinFET) will be required to extended CMOS to 11nm CMOS
-TSMC April 2010: Planar bulk at 20nm node 5th gen SiGe & 2nd gen Hik/MG, 14nm
node maybe FinFET (S.Y. Chiang)



Intel, VLSI Sym 2008                    Toshiba, VLSI Sym
short course                            2006, paper 9.2

       J.O.B. Technologies (Strategic                                   3
       Marketing, Sales &
       Technology)
FD/SOI With Dielectrically Isolated Back
Gates

                                        IBM/YH, VLSI Sym 2010, paper, 4.4




G. Shahidi, IBM, VLSI Sym
2010, paper 13.5




       J.O.B. Technologies (Strategic                                  4
       Marketing, Sales &
       Technology)
Hybrid Localized SOI/Bulk Technology
Using Buried SiGe Layer/Channel




                                   ST/LETI, VLSI Sym 2010, paper 6.2
  J.O.B. Technologies (Strategic                                       5
  Marketing, Sales &
  Technology)
Ultra-Thin-Body & Box (UTBB) FD-SOI
And Localized SOI (LSOI)




  J.O.B. Technologies (Strategic                                            6
  Marketing, Sales &
  Technology)                      IBM Alliance, VLSI Sym 2010, paper 6.3
Intel’s 15nm
Node Floating
Body Cell
(FBC) FD-SOI
With Back
Gate Doping
Intel, VLSI Sym 2010, paper
15.1
                                          Tip implant before spacer

Intel’s Silicon
on Replacemet
Insulator (SRI)
FBC Using
SiGe Etching
For LSOI
Intel, VLSI Sym 2010, paper
         J.O.B. Technologies (Strategic                               7
15.4     Marketing, Sales &
           Technology)
                                 IEDM-2009: Intel 32nm
                                 Node Low Leakage
                                 Junctions




J.O.B. Technologies (Strategic                           8
Marketing, Sales &
Technology)
Outline
 • Introduction
    – Technology Roadmap Options
 • USJ Technology:
    – p+ USJ 22nm node and beyond
    – n+ USJ 22nm node and beyond
 • Strain Technology
    – pMOS 22nm node and beyond
    – nMOS 22nm node and beyond
 • Summary



   J.O.B. Technologies (Strategic   9
   Marketing, Sales &
   Technology)
                             Implant Energy Versus Xj
                      1000


                       900                                                                                                   BF3
                       800
                                                     B
                                                                                              BF2
                                                     BF2

                       700
                                                     BF3
Implant Energy (eV)




                       600

                                                                                                                                   B
                       500


                       400

                                           IBM ET-SOI                                                                        45nm Node
                       300


                       200                                                                             32nm Node
                       100

                                                                      15nm Node 22nm Node                                Intel FBC/SOI 22nm
                         0
                             0         1         2         3      4   5       6      7             8   9   10    11     12        13   14        15
                                                                                         Xj (nm)

                                                                          Borland, Semiconductor International, Dec. 2006, p.49
                                 J.O.B. Technology (Strategic                                                                               10
                                 Marketing, Sales & Technology)
B, B18 & B36 Total Retained Dose (2nm oxide)
                                                         B18/2E15
                                                            70%

                         2nm surface oxide
                                                   55%

                                                     85%
                                                       B            B18    84%
                                                       78%
                                             64%           70%
                                                     B36
                                               60%




   J.O.B. Technologies (Strategic                                                11
   Marketing, Sales &
   Technology)                                       Borland et al., JOB
PCOR-SIMS Analysis
                            B
 B % In 2nm Surface Oxide




                                Boron Xj (nm)   12
Proof Of Surface Reflectance/Backscatter On
Retained Dose Limit & Implant Oxide Growth
  Implant oxide growth




                                    Ge shift due to oxide growth
                                                                Ge      Ox       Xj    R.Dose
                                                          H2    6.9nm   0.2nm
                                                          B     7.0nm   0.57nm   8.3nm 8.89E14
                                                          B18   6.9nm   0.45nm   7.7nm 8.44E14
                                                          B36   6.9nm   0.46nm   8.6nm 8.35E14
                                                          Ox    6.9nm    1.8nm
                                                          B     7.0nm   2.05nm   7.7nm 8.0E14
                                                          B18   6.7nm   2.18nm   7.6nm 6.09E14
                                                          B36   6.9nm   2.3nm    9.6nm 5.96E14




   J.O.B. Technologies (Strategic                                                           13
   Marketing, Sales &
   Technology)                                                   Renesas/JOB/EAG, SSDM-2010
PCOR-SIMS Analysis Of Surface Oxide &
Retained Dose                    3.0



                                 2.5
  Surface Oxide Thickness (nm)




                                                                               B36(R)
                                                                               B18(R)      B(R)
                                 2.0



                                 1.5



                                 1.0



                                 0.5
                                                                                                B(R)
                                                                                          B18 & B36(R)
                                 0.0
                                       0   10   20   30   40       50     60       70     80   90   100

                                                               B Retained Dose %
                                                                                                          14

                                                                    Borland et al., JOB
Lower Residual Implant Damage &
Improve Device Leakage
• Improve self-amorphization to reduce residual implant damage
  with MSA
   – Lower implant wafer temperature (cold or cryo-implantation) -10oC to
     -160oC using chilled water of liquid nitrogen wafer cooling
   – Use molecular dopants (B18H22, B36H44, As4 or P4) improves self-
     amorphization
   – Use heavier ions low dose for PAI & optimize amorphous depth (In, Sb
     or Xe) at <5E13/cm2
• Stable defects and reduction in residual implant damage
  thereby improving junction leakage
   – Higher MSA peak temperature >1300oC
   – Pre/post MSA diffusion-less spike/RTA 850-900oC


    J.O.B. Technologies (Strategic                                  15
    Marketing, Sales &
    Technology)
PLi Of Flash And 900C Spike+Flash




  J.O.B. Technology (Strategic                                           16
  Marketing, Sales &
                                 Borland et al., JOB/Selete, IWJT 2007
  Technology)
                                 J.P. Lu, SMIC/KT, IWJT-2010 paper 1.5




Radiance spike/RTA signature




J.O.B. Technologies (Strategic                                  17
Marketing, Sales &
Technology)
Extension Results (Leakage)
RsL Junction Leakage Current (A/cm2)
  1.00E-02
                    B200eV
                    5keVGe+B      5keV                         Ge-PAI=9nm
  1.00E-03          890eVBF2
                    5keVGe+BF2
                    4keVB18H22
  1.00E-04
                                                                                    Yamamoto et al., IWJT 2008,
                                                                                    MSA pins F in substitutional
                                                                                    site and degrades leakage!
  1.00E-05
                                                                       F effect: Noda (MRS 2008), Yamamoto
                                                                       (IWJT 2008), England (IIT 2008 P41)
  1.00E-06


  1.00E-07


  1.00E-08
                     900C spike      Spike+FLA   FLA+Spike    Flash      SPE      SPE+FLA     FLA+SPE
    J.O.B. Technologies (Strategic                                                                    18
    Marketing, Sales &                                       >1200C?
    Technology)                                                        Borland & Kiyama, JOB/DNS, IIT-2008
Poly & USJ Activation Roadmap

                                       45nm  28nm Node

                                      Lower Temperature                        22nm Node
65nm & 45nm Node
   Spike/RTA                             Spike/RTA
                                              -poly dopant diffusion
       +                                                                    Flash, Laser or SPE
 Flash or Laser                                                                  -USJ diffusion-less activation
-poly dopant diffusion & activation
     -improved Tox(inversion)
          -USJ diffusion
                                        Flash or Laser
                                       -improved poly dopant activation
IBM VLSI 2007 45nm                         -improved Tox(inversion)
1000C Spike                              -USJ diffusion-less activation

                                                                          Borland, Semiconductor International,
                                                                          Dec. 2006, p.49
J.O.B. Technologies (Strategic                                           20
Marketing, Sales &
Technology)
                                 Timans, Mattson, Semicon/West WCJUG July 2008
J.O.B. Technologies (Strategic                                       21
Marketing, Sales &
Technology)                      Kato, Selete, IWJT-2010 paper 1.7
J.O.B. Technologies (Strategic   22
Marketing, Sales &
Technology)
                                    EOR>32nm


                                  EOR>16nm




                                 EOR>9nm




J.O.B. Technologies (Strategic                 23
Marketing, Sales &
Technology)
                                       1.00E-02



                                       1.00E-03
RsL Junction Leakage Current (A/cm2)



                                       1.00E-04

                                                                                        1175C
                                       1.00E-05
                                                                                        1225C

                                                                                        1275C
                                       1.00E-06
                                                                                        1325C


                                       1.00E-07



                                       1.00E-08




                                                                                                24
                                                  Laser Annealing Temperature
                                                              Borland et al., IEEE-RTP-2009
                    BF2 1175C (Bss=3E19/cm3) RD=5.5E14/cm2
                    BF2 1325C (Bss=4E19/cm3)
       5000         Ge+BF2 1175C (Bss=6E19/cm3)
                    Ge+BF2 1225C (Bss=6E19/cm3)
                    Ge+BF2 1275C (Bss=7E19/cm3)
                    Ge+BF2 1325C (Bss=8E19/cm3)

                                     B <1225C (Bss=5E19/cm3) RD=1E15/cm2
   RS                                B 1325C (Bss=1E20/cm3)
        1000
(ohms/sq.)                           Ge+B 1325C (Bss=1.3E20/cm3)
                                     Xe+B 1325C (Bss=3.5E20/cm3)

        500                    B36 1325C (Bss=1.2E20/cm3) RD=6.7E14/cm2
                               Ge+B36 1325C (Bss=1E20/cm3)
                               In+B36 1325C (Bss=1E20/cm3)
                               Xe+B36 1325C (Bss=1.2E20/cm3)



        100
               10                    100
5                         50                  Xj (nm)             500

                           Boron solid solubility:
         50




                                   Borland et al., RTP-2009
Boron Dopant Activation With Laser Melt
1E15 dose: Rs=205 Bss=1.7E20/cm3
2E15 dose: Rs=132 Bss=3E20/cm3
4E15 dose: Rs=91 Bss=4E20/cm3
1E16 does: Rs=73 Bss=5E20/cm3




       J.O.B. Technologies (Strategic                                        26
       Marketing, Sales &
       Technology)                      K. Kuhn, Intel, IWJT-2010 paper K2
22nm Node Dopant Options: Enhanced SDE &
HALO Dopant Activation/Amorphization
                                    •   pMOS
                                        – pSDE (1-3E15/cm2 dose limited by Bss?)
                                            •   B: 100eV/1E15 (need PAI?)
                                            •   BF2: 500eV/1E15 (dose lose!)
 <850C Spike/RTA                            •   B18: 2keV/5E13 (self-amorphization)
                                            •   B36H44: 4keV/2.5E13 (self-amorphization)
 >1350C Flash or Laser                  – HALO (3E13/cm2 dose)
                                            •   As: 20keV/3E13
                                            •   As2: 40keV/1.5E13
                                            •   As4: 80keV/7.5E12
                                            •   Sb: 35keV/3E13 (self-amorphization)
                                    •   nMOS
                                        – nSDE (1E15/cm2 or > dose)
                                            •   As: 1keV/1E15
                                            •   As2: 2keV/5E14
                                            •   As4: 4keV/2.5E14
                                            •   P: 500eV/1E15
                                            •   P2: 1keV/5E14
                                            •   P4: 2keV/2.5E14
                                            •   Sb: 1.7keV/1E15 (self-amorphization)
                                        – HALO (3E13/cm2 dose)
                                            • BF2: 20keV/3E13
                                            • In: 45keV/3E13 dose (self-amorphization but limited
                                              by Inss?) In+B!
   J.O.B. Technology (Strategic             • B18: 80keV/1.5E12                         27
   Marketing, Sales & Technology)
                                                                           Borland et al.,
                                                                           IEEE/RTP-
                                                                           2009




J.O.B. Technologies (Strategic                                                  28
Marketing, Sales &
Technology)                      Mineji et al., NEC/JOBTech/Nissin, IWJT-2007
   For 22nm Node p+ USJ
Formation Using PAI & HALO
  Implantation With Laser
         Annealing
                John O. Borland, J.O.B. Technologies, Aiea, HI
                     John Marino, EAG, East Windsor, NJ
            Michael Current, Frontier Semiconductor, San Jose, CA
               B.L. Darby, University of Florida, Gainesville, FL
                                  IIT June 8, 2010

 J.O.B. Technologies (Strategic                                     29
 Marketing, Sales &
 Technology)
Experimental Matrix Split Conditions
                                                20keV/3E13    35keV/3E13
                                      No HALO   As-HALO       Sb-HALO
•B (200eV/1E15)                       X         X             X
•With Ge-PAI (3keV/5E14)              X         X             X
•With Ge-PAI (10keV/5E14)             X         X             X
•With Xe-PAI (5keV/5E13)              X         X             X
•With Xe-PAI (14keV/5E13)             X         X             X
•With In-PAI (5keV/5E13)              X         X             X
•With In-PAI (14keV/5E13)             X         X             X
•With B36 (100eV/1E15)                X         X             X
•With B36 (500eV/5E13)                X         X             X




                                                    Laser Anneal Pattern

     J.O.B. Technologies (Strategic                                 30
     Marketing, Sales &
     Technology)
X-TEM Results For As-HALO & Sb-HALO
Showing No Amorphization
                                   Surface




  J.O.B. Technologies (Strategic             31
  Marketing, Sales &
  Technology)
No PAI: B, As & Sb HALO




                                   Condition   Native oxide   Xj       B-Diffusion
                                   B           2.4nm          8.7nm    3.0nm
                                   As-HALO     2.2nm          10.0nm   3.5nm
  J.O.B. Technologies (Strategic   Sb-HALO     2.0nm          9.8nm    2.4nm 32
  Marketing, Sales &
  Technology)
Ge-PAI: B, As & Sb HALO




                                                            HALO reduces Ge-PAI TED
                                   Condition   Native oxide    Xj       B-Diffusion
                                   B           1.9nm           8.3nm    6.1nm
                                   As-HALO     2.2nm           9.0nm    5.0nm
  J.O.B. Technologies (Strategic
  Marketing, Sales &
                                   Sb-HALO     2.1nm           8.5nm     5.5nm33
  Technology)
No HALO Rs & Junction Leakage
Leakage (uA/cm2)
                                        Leakage (uA/cm2)




Leakage (uA/cm2)                       Leakage (uA/cm2)




      J.O.B. Technologies (Strategic                       34
      Marketing, Sales &
      Technology)
As & Sb HALO Rs & Junction Leakage

Leakage (uA/cm2)                       Leakage (uA/cm2)




      J.O.B. Technologies (Strategic                      35
      Marketing, Sales &
      Technology)
                                 Pss=1.5E20/cm3 what is leakage values!
                                                                            Box-like
                                                                            profile for P
                                                                            when C dose
                                                                            increases
                                                                            between 1-
                                                                            2E15/cm2




                                    Nagayama, Nissin, IWJT-2010 paper 3.4
J.O.B. Technologies (Strategic                                                      36
Marketing, Sales &
Technology)
Dopant Solid Solubility Limits In Silicon




   J.O.B. Technology (Strategic       37
   Marketing, Sales &
   Technology)
Higher n+ Phos. Dopant Activation
>1.8E21/cm3!
 How to get Pss=>1.8E21/cm3?
 Compare 1350C to Melt (>1407C)




     J.O.B. Technology (Strategic                                                         38
     Marketing, Sales & Technology)
                                      H. Kennel et al., Intel, NIST meeting, March 2006
                                                 In-Temp?




                                           Borland, IIT-2008


Mineji et al., NEC/JOB/Nissin, IWJT-2007
                                 IEEE/RTP 2009


J.O.B. Technologies (Strategic            40
Marketing, Sales &
Technology)
Ni Silicide Improvements With By
Shallow Room Temp Si-PAI, Xe-PAI or
Cold C-PAI




T. Renau, VSEA, IWJT-2010 paper K1      S. Deshpande, IBM, IWJT-2010 paper 4.1

       J.O.B. Technologies (Strategic                                      41
       Marketing, Sales &
       Technology)
Outline
 • Introduction
    – Technology Roadmap Options
 • USJ Technology
    – p+ USJ 22nm node and beyond
    – n+ USJ 22nm node and beyond
 • Strain Technology
    – pMOS 22nm node and beyond
    – nMOS 22nm node and beyond
 • Next



   J.O.B. Technologies (Strategic   42
   Marketing, Sales &
   Technology)
Heated 300C HALO Implantation


                                                                            Issue for eSiGe-
                                                                            SDE or disposable
                                                                            spacer process
                                                                            flow!




                                   S. Deshpande, IBM, IWJT-2010 paper 4.1
  J.O.B. Technologies (Strategic                                                       43
  Marketing, Sales &
  Technology)
eSiGe Strain
Relaxation By p+ SDE
Implant




AMD/Dresden, Insights-2009




       J.O.B. Technologies (Strategic   44
       Marketing, Sales &
       Technology)
AMD RTP 2007 Paper




J.O.B. Technology (Strategic   45
Marketing, Sales &
Technology)
April 2010 ECS Meeting Vancouver,
Canada



Issue for
disposable
spacer process
flow!




     J.O.B. Technologies (Strategic                                                                     46
     Marketing, Sales &
     Technology)           S. Govindaraju et al., Intel, ECS Transactions, vol. 28, no.1, p.81, 2010.
Intel’s 32nm Node Low Power RF CMOS
SOC Technology




                                   Looks like 45nm eSiGe        Looks like 65nm eSiGe
  J.O.B. Technologies (Strategic                                                        47
  Marketing, Sales &
  Technology)
                                                 Intel, VLSI Sym 2010, paper 13.2
April 2010 ECS Meeting Vancouver,
Canada




                            Dube et al., IBM/GF, ECS Transactions, vol.28, no.1, p.63, 2010.
                            In-situ SiCP=3E20/cm3 at C=1.7% Also, 1-2wph!
  J.O.B. Technologies (Strategic                                                               48
  Marketing, Sales &
  Technology)
     22nm Node n+ SiC Stressor
    Using Deep PAI+C7H7+P4 With
          Laser Annealing
                                       IEEE/RTP-2009
  John Borland1, Masayasu Tanjyo2, Nariaki Hamamoto2, Tsutomu Nagayama2, Shankar
Muthukrishnan3, Jeremy Zelenko3, Iad Mirshad4, Walt Johnson4, Temel Buyuklimanli5, Steve
            Robie5, Hiroshi Itokawa6, Ichiro Mizushima6 and Kyoichi Suguro6
                             1) J.O.B. Technologies, Aiea, HI
                         2) Nissin Ion Equipment, Kyoto, Japan
                           3) Applied Materials, Sunnyvale, CA
                               4) KLA-Tencor, San Jose, CA
                                  5) EAG, Sunnyvale, CA
                       6) Toshiba Corporation, Yokohama, Japan



      J.O.B. Technologies (Strategic                                            49
      Marketing, Sales &
      Technology)
J.O.B. Technologies (Strategic   50
Marketing, Sales &
Technology)
J.O.B. Technologies (Strategic   51
Marketing, Sales &
Technology)
                                       Keep Csub to
                                       <1.3% and use
                                       850C SPE+MSA




                                       Itokawa, Toshiba/IBM, IWJT-
                                       2010 papers 3.2 & 6.14




                                 OK to have 1% C in channel
J.O.B. Technologies (Strategic   under the gate stack (mid- 52
Marketing, Sales &
Technology)                      E19/cm3)?
                               SUMMARY
• 22nm Node (2011-2012)
  – Planar Bulk CMOS by Intel & IBM/Alliance Foundry
  – Planar PD-SOI by IBM/Alliance
  – USJ <10nm using MSA+spike/RTA diffusion-less annealing
       • p+(B, B10 or B18/36)
       • n+(As or P+C)
  – Channel mobility enhancement
       • pMOS: eSiGe or SiGe-channel
       • nMOS: eSiC by Epi or C+P implant
• 15nm Node (2013-2015) & 11nm Node (2015-2017)
  – Planar CMOS:
       • Hybrid bulk and localized FD-SOI with back-gate (Intel &
         IBM/Alliance Foundry)
       • FD-SOI with back-gate: IBM/Alliance
  – J.O.B. TechnologiesCMOS?
     FinFET (Strategic                                              53
    Marketing, Sales &
    Technology)

								
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