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					                                                                                                         PD - 97074A

                                                                           IRFI4019H-117P
                                          DIGITAL AUDIO MOSFET

Features                                                                   Key Parameters h
Ÿ    Integrated Half-Bridge Package                         VDS                                   150            V
Ÿ    Reduces the Part Count by Half                         RDS(ON) typ. @ 10V                    80            m:
Ÿ    Facilitates Better PCB Layout                          Qg typ.                               13              nC
Ÿ    Key Parameters Optimized for Class-D                   Qsw typ.                              4.1             nC
     Audio Amplifier Applications
                                                            RG(int) typ.                          2.5                Ω
Ÿ    Low RDS(ON) for Improved Efficiency
                                                            TJ max                                150             °C
Ÿ    Low Qg and Qsw for Better THD and
     Improved Efficiency
Ÿ    Low Qrr for Better THD and Lower EMI
Ÿ    Can Delivery up to 200W per Channel into
     8Ω Load in Half-Bridge Configuration
     Amplifier                                                                                                    G1
                                                                                                                       D1

                                                                                                             S1/D2

Ÿ    Lead-Free Package                                                                                      S2
                                                                                                               G2



                                                                                             TO-220 Full-Pak 5 PIN
                                                                  G1, G2             D1, D2              S1, S2
Description                                                       Gate               Drain               Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
 Absolute Maximum Ratings h
                                         Parameter                                    Max.                   Units
VDS                 Drain-to-Source Voltage                                            150                      V
VGS                 Gate-to-Source Voltage                                             ±20
ID @ TC = 25°C      Continuous Drain Current, VGS @ 10V                                8.7                      A
ID @ TC = 100°C     Continuous Drain Current, VGS @ 10V                                6.2
IDM                 Pulsed Drain Current c                                             34
EAS                 Single Pulse Avalanche Energyd                                     77                      mJ
PD @TC = 25°C       Power Dissipation f                                                18                      W
PD @TC = 100°C      Power Dissipation f                                                7.2
                    Linear Derating Factor                                             0.15                  W/°C
TJ                  Operating Junction and                                         -55 to + 150               °C
TSTG                Storage Temperature Range
                    Soldering Temperature, for 10 seconds
                                                                                       300
                    (1.6mm from case)
                    Mounting torque, 6-32 or M3 screw                         10lbxin (1.1Nxm)

Thermal Resistance h
                                         Parameter                          Typ.                Max.         Units
RθJC                Junction-to-Case f                                      –––                   6.9
RθJA                Junction-to-Ambient f                                   –––                   65
Notes  through † are on page 2
www.irf.com                                                                                                                 1
                                                                                                                                8/22/06
IRFI4019H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) h
                                   Parameter                       Min.     Typ. Max. Units                       Conditions
BVDSS              Drain-to-Source Breakdown Voltage               150       –––      –––       V    VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ         Breakdown Voltage Temp. Coefficient             –––       0.19     –––     V/°C Reference to 25°C, ID = 1mA
RDS(on)            Static Drain-to-Source On-Resistance            –––        80      95      mΩ     VGS = 10V, ID = 5.2A e
VGS(th)            Gate Threshold Voltage                           3.0      –––      4.9       V    VDS = VGS, ID = 50µA
∆VGS(th)/∆TJ       Gate Threshold Voltage Coefficient              –––       -11      –––    mV/°C
IDSS               Drain-to-Source Leakage Current                 –––       –––      20       µA    VDS = 150V, VGS = 0V
                                                                   –––       –––      250            VDS = 150V, VGS = 0V, TJ = 125°C
IGSS               Gate-to-Source Forward Leakage                  –––       –––      100      nA    VGS = 20V
                   Gate-to-Source Reverse Leakage                  –––       –––     -100            VGS = -20V
gfs                Forward Transconductance                         11       –––      –––       S    VDS = 50V, ID = 5.2A
Qg                 Total Gate Charge                               –––        13      20
      Qgs1         Pre-Vth Gate-to-Source Charge                   –––        3.3     –––            VDS = 75V
      Qgs2         Post-Vth Gate-to-Source Charge                  –––        0.8     –––      nC    VGS = 10V
      Qgd          Gate-to-Drain Charge                            –––        3.9     –––            ID = 5.2A
      Qgodr        Gate Charge Overdrive                           –––        5.0     –––            See Fig. 6 and 19
Qsw                Switch Charge (Qgs2 + Qgd)                      –––        4.1     –––
RG(int)            Internal Gate Resistance                        –––        2.5     –––       Ω
td(on)             Turn-On Delay Time                              –––        7.0     –––            VDD = 75V, VGS = 10V       e
tr                 Rise Time                                       –––        6.6     –––            ID = 5.2A
td(off)            Turn-Off Delay Time                             –––        13      –––      ns    RG = 2.4Ω
tf                 Fall Time                                       –––        3.1     –––
Ciss               Input Capacitance                               –––       810      –––            VGS = 0V
Coss               Output Capacitance                              –––       100      –––      pF    VDS = 25V
Crss               Reverse Transfer Capacitance                    –––        15      –––            ƒ = 1.0MHz,          See Fig.5
Coss               Effective Output Capacitance                    –––        97      –––            VGS = 0V, VDS = 0V to 120V
LD                 Internal Drain Inductance                       –––        4.5     –––            Between lead,                        D


                                                                                               nH    6mm (0.25in.)
                                                                                                                                      G
LS                 Internal Source Inductance                      –––        7.5     –––            from package
                                                                                                                                          S
                                                                                                     and center of die contact


Diode Characteristics h
                          Parameter                                Min.     Typ. Max. Units                       Conditions
IS @ TC = 25°C Continuous Source Current                           –––       –––      8.7            MOSFET symbol
                   (Body Diode)                                                                 A    showing the
ISM                Pulsed Source Current                           –––       –––       34            integral reverse
                   (Body Diode) c                                                                    p-n junction diode.
VSD                Diode Forward Voltage                           –––       –––      1.3       V    TJ = 25°C, IS = 5.2A, VGS = 0V e
trr                Reverse Recovery Time                           –––        57      86       ns    TJ = 25°C, IF = 5.2A
Qrr                Reverse Recovery Charge                         –––       140      210      nC    di/dt = 100A/µs e




Notes:                                                                    „ Rθ is measured at TJ of approximately 90°C.
 Repetitive rating; pulse width limited by max. junction temperature.    … Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
‚ Starting TJ = 25°C, L = 5.8mH, RG = 25Ω, IAS = 5.2A.                     avalanche information
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.                                   † Specifications refer to single MosFET.
      2                                                                                                                       www.irf.com
                                                                                                                                                                                                                IRFI4019H-117P
                                     100                                                                                                                                                          100
                                                                                        VGS                                                                                                                                 VGS
                                                                             TOP        15V                                                                                                                   TOP           15V
                                                                                        12V                                                                                                                                 12V
  ID, Drain-to-Source Current (A)




                                                                                                                                                         ID, Drain-to-Source Current (A)
                                                                                        10V                                                                                                                                 10V
                                                                                        9.0V                                                                                                                                9.0V
                                      10                                                8.0V                                                                                                                                8.0V
                                                                                        7.0V                                                                                                                                7.0V
                                                                                       6.0V                                                                                                        10                      6.0V
                                                                             BOTTOM     5.5V                                                                                                                  BOTTOM        5.5V

                                       1
                                                                                                                                                                                                                                             5.5V

                                                          5.5V                                                                                                                                      1
                                     0.1

                                                                     ≤ 60µs PULSE WIDTH                                                                                                                                                 ≤ 60µs PULSE WIDTH
                                                                     Tj = 25°C                                                                                                                                                          Tj = 150°C
                                    0.01                                                                                                                                                          0.1
                                            0.1           1                 10                 100                                                                                                      0.1                    1                10          100

                                                  VDS , Drain-to-Source Voltage (V)                                                                                                                                 VDS , Drain-to-Source Voltage (V)

                                       Fig 1. Typical Output Characteristics                                                                                                                      Fig 2. Typical Output Characteristics

                                     100                                                                                                                                         2.5
                                                                                                                                                                                                        ID = 5.2A



                                                                                                               RDS(on) , Drain-to-Source On Resistance
                                                                                                                                                                                                        VGS = 10V
 ID, Drain-to-Source Current(Α)




                                                                                                                                                                                 2.0

                                      10          TJ = 175°C                                                                                         (Normalized)
                                                                                                                                                                                 1.5



                                                                                                                                                                                 1.0
                                       1                               TJ = 25°C


                                                                                                                                                                                 0.5
                                                                 VDS = 50V
                                                                 ≤ 60µs PULSE WIDTH
                                     0.1
                                                                                                                                                                                 0.0
                                            4         5              6             7           8
                                                                                                                                                                                                   -60 -40 -20         0     20    40   60   80 100 120 140 160
                                                  VGS, Gate-to-Source Voltage (V)
                                                                                                                                                                                                                    TJ, Junction Temperature (°C)

                                     Fig 3. Typical Transfer Characteristics                                Fig 4. Normalized On-Resistance vs. Temperature


                          100000                                                                                                                                                                  20
                                                    VGS = 0V,     f = 1 MHZ
                                                    Ciss = Cgs + Cgd, Cds SHORTED                                                                                                                           ID= 5.2A
                                                                                                                                                                                                                               VDS = 120V
                                                                                                                                                                VGS, Gate-to-Source Voltage (V)




                                                    Crss = Cgd
                                    10000                                                                                                                                                         16                           VDS= 75V
                                                    Coss = Cds + Cgd
                                                                                                                                                                                                                               VDS= 30V
C, Capacitance (pF)




                                    1000                      Ciss                                                                                                                                12



                                     100
                                                              Coss                                                                                                                                 8


                                                                Crss
                                      10                                                                                                                                                           4


                                                                                                                                                                                                   0
                                       1
                                             1             10                 100                  1000
                                                                                                                                                                                                        0               5               10           15     20
                                                                                                                                                                                                                      QG Total Gate Charge (nC)
                                                   VDS , Drain-to-Source Voltage (V)

                Fig 5. Typical Capacitance vs.Drain-to-Source Voltage                                     Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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          IRFI4019H-117P
                                      100                                                                                                                                                                           100
                                                                                                                                                                                                                                                                   OPERATION IN THIS AREA
                                                                                                                                                                                                                                                                   LIMITED BY R DS (on)




                                                                                                                                                                                 ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)




                                                                                                                                                                                                                                                                 1msec        100µsec
                                       10                                                                                                                                                                            10
                                                                             TJ = 150°C



                                                                                                                                                                                                                                                       DC
                                                                                                                                                                                                                                                                  10msec
                                           1                                                                                                                                                                             1
                                                                                                  TJ = 25°C

                                                                                                                                                                                                                                       Tc = 25°C
                                                                                                                                                                                                                                       Tj = 150°C
                                                                                                                VGS = 0V                                                                                                               Single Pulse
                                      0.1                                                                                                                                                                           0.1
                                                        0.0                         0.5                   1.0              1.5                                                                                                     1                               10               100                1000
                                                                             VSD , Source-to-Drain Voltage (V)                                                                                                                                    VDS , Drain-toSource Voltage (V)

                             Fig 7. Typical Source-Drain Diode Forward Voltage                                                                                                                                                     Fig 8. Maximum Safe Operating Area

                                      10                                                                                                                                                                           5.0




                                                                                                                                                                 VGS(th) Gate threshold Voltage (V)
                                      8
 ID , Drain Current (A)




                                                                                                                                                                                                                   4.0
                                                                                                                                                                                                                                                                                    ID = 50µA
                                      6



                                      4
                                                                                                                                                                                                                   3.0


                                      2



                                      0                                                                                                                                                                            2.0
                                                25                           50           75        100           125      150                                                                                           -75           -50             -25        0      25    50   75     100   125   150

                                                                              TJ , Junction Temperature (°C)                                                                                                                                                 TJ , Temperature ( °C )


                                  Fig 9. Maximum Drain Current vs. Case Temperature                                                                                                                   Fig 10. Threshold Voltage vs. Temperature

                                                                       10

                                                                                D = 0.50

                                                                                    0.20
                                       Thermal Response ( Z thJC )




                                                                        1
                                                                                    0.10
                                                                                    0.05

                                                                                   0.02                                                                                                               R1
                                                                                                                                                                                                        R1
                                                                                                                                                                                                                              R2
                                                                                                                                                                                                                                R2
                                                                                                                                                                                                                                             R3
                                                                                                                                                                                                                                              R3                 Ri (°C/W)      τι (sec)
                                                                       0.1
                                                                                   0.01                                                          τJ                                                                                                     τC
                                                                                                                                                      τJ
                                                                                                                                                       τ1
                                                                                                                                                                                                                                                             τ   1.508254 0.000814
                                                                                                                                                                                                                         τ2                  τ3
                                                                                                                                                            τ1                                                                τ2                  τ3
                                                                                                                                                                                                                                                                 2.154008 0.111589
                                                                                                                                                        Ci= τi/Ri
                                                                                                                                                          Ci= τi/Ri                                                                                              3.237738 2.2891
                                                                      0.01

                                                                                          SINGLE PULSE                                                                                                                                 Notes:
                                                                                          ( THERMAL RESPONSE )                                                                                                                         1. Duty Factor D = t1/t2
                                                                                                                                                                                                                                       2. Peak Tj = P dm x Zthjc + Tc
                                                                     0.001
                                                                        1E-006                 1E-005             0.0001           0.001              0.01                                                                             0.1                              1                  10

                                                                                                                           t1 , Rectangular Pulse Duration (sec)


                                                                                  Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
                                  4                                                                                                                                                                                                                                                 www.irf.com
                                                                                                                                                                                                                  IRFI4019H-117P
                                               0.5                                                                                                                                               350
RDS (on), Drain-to -Source On Resistance ( )
                                         Ω




                                                                                                                                                      EAS, Single Pulse Avalanche Energy (mJ)
                                                                                                  ID = 5.2A                                                                                                                                         ID
                                                                                                                                                                                                 300                                        TOP    0.91A
                                               0.4                                                                                                                                                                                                 1.1A
                                                                                                                                                                                                                                            BOTTOM 5.2A
                                                                                                                                                                                                 250

                                               0.3
                                                                                                                                                                                                 200


                                               0.2                                                                                                                                               150

                                                                                         TJ = 125°C                                                                                              100
                                               0.1
                                                                                         TJ = 25°C                                                                                                 50

                                               0.0
                                                                                                                                                                                                    0
                                                     4    5       6              7          8         9           10
                                                                                                                                                                                                         25        50          75      100        125      150
                                                          VGS, Gate-to-Source Voltage (V)                                                                                                                      Starting TJ, Junction Temperature (°C)


                                               Fig 12. On-Resistance Vs. Gate Voltage                                                    Fig 13. Maximum Avalanche Energy Vs. Drain Current




                                                                                                                                         Driver Gate Drive
                                                                                                                                                                                                                              P.W.
                                                          D.U.T                                                                                P.W.
                                                                                                                                                                                                Period                  D=
                                                                                                                                                                                                                             Period
                                                                      +
                                                                                                                                                                                                                                      ***
                                                                                                                                                                                                                                      VGS=10V
                                                                      ƒ              Circuit Layout Considerations
                                                                                      • Low Stray Inductance
                                                                                      • Ground Plane
                                                                      -               • Low Leakage Inductance                           D.U.T. ISD Waveform
                                                                                         Current Transformer
                                                     +
                                                                                                                              Reverse
                                                     ‚                                                                        Recovery                     Body Diode Forward
                                                                                                  -
                                                                                                      „   +                   Current                            Current
                                                     -                                                                                                                   di/dt
                                                                                                                                         D.U.T. VDS Waveform
                                                                                                                                                                Diode Recovery
                                                                                                                                                                    dv/dt
                                                                                                                                                                                                                                      VDD
                                                                  *
                                                     RG                   •   dv/dt controlled by RG              VDD       Re-Applied
                                                                                                                        +
                                                                          •   Driver same type as D.U.T.          **        Voltage                                              Body Diode                   Forward Drop
                                                                          •   ISD controlled by Duty Factor "D"         -                Inductor Curent
                                                                          •   D.U.T. - Device Under Test

                                                                                                                                                                               Ripple ≤ 5%                                            ISD


                                                 * Use P-Channel Driver for P-Channel Measurements                                       *** VGS = 5V for Logic Level Devices
                                                 ** Reverse Polarity for P-Channel

                                                               Fig 14. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs




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IRFI4019H-117P

                                                                                                                          V(BR)DSS
                                                 15V
                                                                                                         tp


                                  L                    DRIVER
                VDS



               RG               D.U.T                      +
                                                             V
                                                           - DD
                           IAS                                    A
               VGS
               20V
                      tp          0.01Ω
                                                                                  I AS


     Fig 15a. Unclamped Inductive Test Circuit                               Fig 15b. Unclamped Inductive Waveforms




                                            RD
                     VDS                                                    VDS
                                                                            90%
               VGS
                                      D.U.T.
          RG
                                                       +
                                                       -VDD
                                                                            10%
               10V                                                           VGS
          Pulse Width ≤ 1 µs
          Duty Factor ≤ 0.1 %                                                            td(on)     tr         td(off)   tf



    Fig 16a. Switching Time Test Circuit                                     Fig 16b. Switching Time Waveforms




                                                                                                                                       Id
                                                                                            Vds

                                                                                                                                 Vgs

                                                       L
                                                                      VCC
                                               DUT
0
                                                                                          Vgs(th)
                     1K
                                        S
                     20K



                                                                                          Qgs1 Qgs2      Qgd         Qgodr



        Fig 17a. Gate Charge Test Circuit                                                Fig 17b Gate Charge Waveform




6                                                                                                                               www.irf.com
                                                                                      IRFI4019H-117P
TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117
(Dimensions are shown in millimeters (inches))




TO-220 Full-Pak 5-Pin Part Marking Information




                                                           PS
                                                           Ã




TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.

                                                                  Data and specifications subject to change without notice.
                                                   This product has been designed and qualified for the Consumer market.
                                                                    Qualification Standards can be found on IR’s Web site.




                   IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
                                                                                        TAC Fax: (310) 252-7903
                                                      Visit us at www.irf.com for sales contact information. 08/06
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