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High-performance

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Single-walledcarbonnanotubes(SWNTs)havemanyexceptionalelectronicproperties.RealizingthefullpotentialofSWNTsin realisticelectronicsystemsrequiresascalableapproachtodeviceandcircuitintegration.Wereporttheuseofdense,perfectly alignedarraysoflong,perfectlylinearSWNTsasaneffectivethin-filmsemiconductorsuitableforintegrationintotransistors andotherclassesofelectronicdevices.ThelargenumberofSWNTsenableexcellentdevice-levelperformancecharacteristics andgooddevice-to-deviceuniformity,evenwithSWNTsthatareelectronicallyheterogeneous.Measurementsonp-and n-channeltransistorsthatinvolveasmanyas 2,100SWNTsrevealdevice-levelmobilitiesandscaledtransconductances approaching 1,000cm2 V21 s21 and  3,000Sm21,respectively,andwithcurrentoutputsofupto 1Aindevicesthatuse interdigitatedelectrodes.PMOSandCMOSlogicgatesandmechanicallyflexibletransistorsonplasticprovideexamplesof devicesthatcanbeformedwiththisapproach.Collectively,theseresultsmayrepresentaroutetolarge-scaleintegrated nanotubeelectronics.

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