Temperature Control Device For Optoelectronic Devices - Patent 8111724

Document Sample
Temperature Control Device For Optoelectronic Devices - Patent 8111724 Powered By Docstoc
Description: BACKGROUND The present invention relates to a semiconductor structure, and particularly to a temperature control device for an optoelectronic device and a germanium photodetector for silicon waveguide, and methods of manufacturing the same, and methods ofoperating the same. A semiconductor waveguide may be employed in microphotonic devices to enable high efficiency long range transmission of light over distances in the micrometer range or in the millimeter range. The semiconductor waveguide typically employs asingle crystalline semiconductor material to minimize signal loss due to absorption of light. The semiconductor material in the semiconductor waveguide has a relative high refractive index. For example, silicon and germanium have a refractive index ofabout 3.45 and about 4.0, respectively. A dielectric material having a lower refractive constant surrounds the semiconductor waveguide so that a total reflection condition is satisfied at the interface between the semiconductor waveguide and thedielectric material for light impinging on the interface at a glancing angle. The semiconductor wave guide may thus be employed to transmit light having a wavelength greater than the wavelength corresponding to the band gap of the semiconductormaterial. Typically, infrared lights are employed in the semiconductor waveguide. Many microphotonic devices manipulate the light in the semiconductor waveguide in some way. For example, the light in the semiconductor waveguide may be absorbed, reflected, or induced to change the phase. Many of the prior art methods thataccomplish such optical manipulation employ exotic materials or special processing steps that are not typically employed in standard complementary metal-oxide-semiconductor (CMOS) processing steps, thereby increasing the manufacturing cost and processingcomplexity. In view of the above, there exists a need to provide a structure that manipulates the light in a semiconductor waveguide with standard CMOS processin