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					XX International Scientific and Engineering
Conference on Photoelectronics and Night
              Vision Devices
               May 27-30, 2008
               Moscow, Russia


              PROGRAMME
XX International Scientific and Engineering Conference on
Photoelectronics and Night Vision Devices
Is organized by:
“Orion” RD&P Center

Conference is supported by:
Federal Agency of Industry,
Federal Agency of Science and Innovations, Russian
Academy of Science,
Government of Moscow
XX International Scientific and Engineering Conference
    On Photoelectronics and Night Vision Devices
               May 27-30, 2008 Moscow, Russia




               PROGRAMME




          State Research Center of Russian Federation
                    “Orion” RD&P Center
                         Moscow, 2008
International Program Committee
Chairman: A.M. Filachev, “Orion” RD&P Center, Russia
Vice-chairmen:
V.P. Ponomarenko, “Orion” RD&P Center, Russia
A.I. Dirochka, “Orion” RD&P Center, Russia
Scientific secretary: I.D. Burlakov, “RD&P Center “Orion”, Russia
Committee members:
A.L. Aseev – IPS SD RAS
A.S. Bugaev – MIPT, Russia
Y.V. Gulyaev – IRE RAS
V.P. Ejov – Sapphire, JSC, Russia
A.V. Elyutin – IRM, Russia
V.P. Ivanov – FSSC GIPO, Russia
V.I. Ryzhi – University of AIZU, Japan
O.N. Krochin – PI RAS
Kumar Vikram – Solid-State Phys. Lab., India
N.N. Kudryavtsev – MIPT, Russia
Y.K. Pojela – IPS, Lithuania
Rogalsky Antoni – WAT, Poland
E.Y. Salaev – Institute of Physics, Azerbaijan
A.S. Sigov – MIREA, Russia
F.F. Sizov – ISP, Ukraine
V.A.Soldatenkov – FSUE “Geophizika-NV”, Russia
R.M.Stepanov – NRI “Electron”, Russia
Philippe Tribolet– Sofradir, France
Y.P.Yakovlev – PTI RAS
Y.P. Yakovlev – PTI RAS
Organization committee
Chairman – A.M. Filachev, “Orion” RD&P Center, Russia
Vice chairmen:
M.D. Korneeva, “Orion” RD&P Center, Russia
L.Ya. Grinchenko, “Orion” RD&P Center, Russia
Executive secretary – M.I. Romanishina, “Orion” RD&P Center
Committee members:
K.A. Volkov – “Orion” RD&P Center, Russia
A.I. Dirochka - “Orion” RD&P Center, Russia
V.M. Proskurin – “Orion” RD&P Center, Russia
K.A. Levinskikh - FAI
A.M. Tokarev – “Orion” RD&P Center, Russia
V.V. Shabarov – Government of Moscow




                                           2
General information

Data and scene of Conference carrying out

Conference is carrying out in “Orion” RD&P Center at the address: Kosinskaja, 9,
block 2G, Moscow (near “Vykhino” metro station).

Registration

Participant’s registration, working sets delivery and the stamp of traveling papers are
carrying out on the ground floor.

Conference fee

A registration fee including participation in a scientific and social program, publishing
abstracts and proceedings of the Conference, lunch etc. will be 135 EUR, but for
participants of Russia and CIS it will be 40 EUR (20 EUR for students and post-
graduated students, 30 EUR for speakers). The each report can be presented by one
author only. Participants can pay fees at registration.




                                            3
                                      PROGRAMME

THE LAST NEWS:

ON THE CONFERENCE WILL BE LISTEN THE NEXT ADDITION REPORTS

        The Thales last developments in the field of technologies and imaging
        information means
        Michel Papuchon
        Thales, France

        The development trends of the aerospace optical electronic means and
        photodetectors requirements for them
        V.F. Zakharenkov, E.A. Jozep, G.B. Kamenkov, G.A. Makavtsov, L.A. Mirzoeva,
        V.S. Pavlov, V.A. Tupikov
        S.I.Vavilov GOI, S.-Petersburg , Russia


                                         Tuesday, May 27


10.00 Opening of the Conference
Opening Address of the Organizing Committee Chairman A.M. Filachev

П01       Current state, outlooks and problems of developing IR photoelectronic
10.20     V.P. Ponomarenko, A.M. Filachev, L.Ya. Grinchenko
          State Scientific Center «RD&P Center «Orion», Moscow, Russia

П02       Quantum dot infrared photodetectors: status and outlook
10.50     A. Rogalski
          Institute of Applied Physics, Military University of Technology, Warsaw, Poland

П03       Magnetic and acoustic photonic metamaterials
11.30     S.A. Nikitov, Yu.V. Gulyaev
          Institute of Radioengineering and Electronics, RAS, Moscow, Russia



                                   12.00 – 12.20 Coffee Break

П04       New challenges for high performance IR applications
12.20     Philippe TRIBOLET
          SOFRADIR, France

П05       Development status of IR FPA detectors in KIP
12.50     Xiao-Ping Chen
          Kunming Institute of Physics, Kunming, China



                                                   4
П06     Second generation of focal plane array on the basis of design MCT MBE
13.20   V.S. Varavin, V.V. Vasiliev, S.A. Dvoretsky, T.I. Zakhariyash, A.G. Klimenko,
        I.V. Marchshin, N.N. Mikhailov, A.V. Predein, A.O. Suslyakov, Yu.G. Sidorov,
        M.V. Yakushev, A.L. Aseev
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia


                              14.00 – 15.30 Lunch. Exhibition
П07     Ultimate parameters of multielement hybrid MOS InAs IR FPA and
15.30   devices based of them
        G.L. Kuryshev, 1.1. Lee, V.M. Bazovkin, N.A. Valisheva, A.A. Guzev, V.M. Efimov,
        A.P. Kovchavtsev, V. G. Polovinkin, and A. S. Stroganov
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

У01     Research of the InSb FPA photo-electric parameters
16.00   A.I. Patrashin, I.L. Kasatkin, A.A. Lopukhin, V.F. Chishko
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У02     Research of time correctability for InSb FPA
16.20   V.F. Chishko, A.I. Dirochka, I.L. Kasatkin, A.A. Lopukhin
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У03     The assembly on basis 320x240 uncooled VOX microbolometer IR FPA
16.40   M.A.Dem'yanenko, B.I.Fomin, D.G. Esaev, V.N. Ovsyuk, L.L. Vasil'ieva, C.A. Volkov,
        I.V. Marchishin, Y.S. Chetverov*, A.E. Zdobnikov*, P.N. Kudriavtsev*,
        E.B. Volodin**, A.E. Ermolov **, P.P. Usov**, V.P. Chesnokov**, P.R. Mashevich**
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
        *
          JSC Central Research Institute “Cyclone”, Moscow, Russia
        **
           JSC “Angstrem”, Moscow, Russia



                                 17.00 – 17.15 Coffee Break

У04     Uncooled matrix IR detector using Golay cell and optoelectronic reading
17.15   system
        A.V. Gelfand, A.G. Paulish, V.N. Fedorinin
        Novosibirsk branch of Institute of Semiconductor Physics SB RAS “EDI AME”, Novosibirsk,
        Russia

У05     288×4 IR FPA with bidirectional image scanning
17.35   V.V. Vasilyev, A.V. Predein, V.S. Varavin, N.N. Mikhailov, S.A. Dvoretsky, V.P.Reva*,
        Yu.G. Sidorov, F.F. Sizov*, A.O. Suslyakov, A.L. Aseev
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
        * V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

У06     128×4×2 dual-band HgCdTe focal plane array detector and its application
17.55   Jin-Yi Wang Ling Jin Pin-Yi Zhang
        Kunming Institute of Physics, Kunming City, China



                                                 5
У07     Two-spectral focal plane arrays based on quantum well structures
18.15   A.A. Kazakov, G.M. Zverev, V.B. Kulikov, V.P. Kotov, O.F. Butyagin,
        O.B. Cherednichenko, U.V. Kurnyavko, A.A. Marmaluk, А.А. Solodkov*
        M.F. Stelmakh Research & Development Institute “Polyus”, Moscow, Russia
        *Federal State Organization «22 Central Scientific Research Test Institute of The Defence
        Ministry of Russian Federation» Mutishy, Russia

У08     Long-wavelength 320×240 quantum well infrared photodetector
18.35   Yan-Li Shi
        Detector Center, Kunming North Infrared Technology Co., LTD, Kunming City, China

У09     PtSi 320х240 CMOS focal plane arrays for 3-5 µm
18.55   A.Y. Nikiforov, V.V. Karpov, A.M. Belin*, V.I. Zolotaryov*, A.D. Popov*
        JSC “MZ “Sapphire”, Moscow, Russia
        *JSC "Angstrom", Moscow, Russia




                                     Wednesday, May 28
                                         Section А
                                        9.30 – 12.00

П08     Detectors of terahertz radiation utilizing plasma resonances
9.30    Victor Ryzhii, Maxim Ryzhii, Akira Satou, Taiichi Otsuji*, and Michael S. Shur**
        Computational Nanoelectronics Laboratory, University of Aizu, Wakamatsu 965-8580,
        Japan
        *Research Institute of Electrical Communication Tohoku University, Sendai, Japan
        **Department of Electrical, Electronics, and System Engineering, Rensselaer Polytechnic
        Institute, Troy, USA

П09     Mm and sub-mm (THz) detectors
10.00   F.F. Sizov
        V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

П10     Microbolometer FPA for registration of infrared and terahertz radiation
10.30   M.A. Dem’yanenko, D.G. Esaev, V.N. Ovsyuk, B.I. Fomin, A.L. Aseev, B.A. Knyazev*,
        G.N. Kulipanov*, and N.A.Vinikurov*
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
        *Budker Institute of Nuclear Physics SB RAS, Novosibirsk, Russia

У10     Microbolometer FPA for registration of terahertz radiation
11.00   M.A. Dem’yanenko, D.G. Esaev, I.V.Marchishin, V.N. Ovsyuk, B.I. Fomin, B.A. Knyazev*
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
        *Budker Institute of Nuclear Physics SB RAS, Novosibirsk, Russia

У11     Planar detectors for millimeter wave focal plane imaging systems
11.20   V.R. Zakamov, V.I. Shashkin, A.V. Murel
        Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia




                                                6
У12     4x288 LWIR TDI vacuum subarray photodetector module (FUK-140)
11.40   V.V. Karpov, N.S. Kuznetsov, B.S. Krasheninnikov, V.I. Petrenko, V.I. Semenov,
        V.V. Vasilyev*
        JSC “MZ “Sappfir”, Moscow, Russia
        *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia



                                 12.00 – 12.15 Coffee Break

П11     Multichannel signal preprocessors for multielement IR FPA
12.15   I.I. Lee
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

У13     Principles of construction ROIC using photosignal ADC
12.40   P.A. Kuznetsov, E.A. Klimanov
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У14     Influence of readouts design-technological limitations on FPA parameters
13.00   V.P. Reva, F.F. Sizov*
        Institute of Microstructures, Kiev, Ukraine
        * V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

У15     The signal processing modules auto-testing method of optoelectronic
13.20   devices
        А.А. Solodkov, S.S. Miloserdov
        Federal State Organization «22 Central Scientific Research Test Institute of The Defence
        Ministry of Russian Federation», Mytischy, Russia

У16     Development of color imaging with natural color appearance for low-level
13.40   light visible and infrared image
        Wang Lingxue, Jin Weiqi, Shi Shiming, Zhao Yuanmeng
        Beijing Institute of Technology, Beijing, China



                         14.00 – 15.20 Lunch. Posters (Section А)

У17     “Analog pipeline processing” using for TDI realization
15.20   V.P. Reva*, Yu.P. Derkach*, S.V. Korinets*, A.G. Golenkov*
        Institute of Microstructures, Kiev, Ukraine
        * V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

У18     Adaptive algorithm of pirosignal multiframed accumulation in real-time
15.40   V.I. Bozhenko, O.P. Kondratov, P.A. Kondratov, V.F. Tkachenko
        National University “Lviv Politechnika”, Lviv, Ukraine




                                                 7
У19     Adaptive non-uniformity correction with micro-scaning for FPA
16.00   S.I. Zhegalov, W.N. Solyakov, V.G. Morozova*
        State Scientific Center «RD&P Center «Orion», Moscow, Russia
        *MIPT, Dolgoprudnyi Russia

У20     Nonlinear non-uniformity correction for FPA
        S.I. Zhegalov*, W.N. Solyakov*, V.G. Morozova*, **
        *State Scientific Center «RD&P Center «Orion», Moscow, Russia
        **MIPT, Dolgoprudnyi Russia

У21     Modeling of adaptive non-uniformity correction for FPA
        S.I. Zhegalov*, W.N. Solyakov*, V.G. Morozova*, **
        *State Scientific Center «RD&P Center «Orion», Moscow, Russia
        **MIPT, Dolgoprudnyi Russia

У22     Enhancing of thermal contrast in IR images
16.30   V.N.Soljakov, V.N. Gorelik, D.Yu. Trenin*
        State Scientific Center «RD&P Center «Orion», Moscow, Russia
        *MIPT, Dolgoprudnyi Russia

У23     Recognition of objects with low thermal contrast by two-band
        thermoimaging system
        L.I. Gorelik, A.V. Polesskiy, V.N. Solyakov, D.Y. Trenin*
        State Scientific Center «RD&P Center «Orion», Moscow, Russia
        *MIPT, Dolgoprudnyi Russia

У24     Algorithms and software for micro objects diffraction pattern analysis
16.55   N.G. Vlasov, G.S. Kalenkov**, S.G. Kalenkov*, A.E. Shanko
        “Stankin” Moscow State Technical University, Moscow, Russia
        *”MAMI” Moscow State Technical University, Moscow, Russia
        **MIPT, Dolgoprudnyi Russia



                               17.10 – 17.25 Coffee Break

У25     The researches of parameters FPA correction stability
17.25   V.N. Soljiakov, M.V. Kortikov
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У29     Progress of researches in scene-based nonuniformity correction for IRFPA
17.40   Jin Weiqi Sui jing Dong Liquan Cao Fengmei Cao Yang Liu Chongliang Liu Xiu
        Beijing Institute of Technolog, Beijing, China

У30     Digital signal processing algorithms in star trackers
18.05   A.N. Isakov, V.I. Fedoseev, V.M. Abakumov
        JSK "Geofizika-Cosmos", Moscow, Russia




                                              8
У26     Photosensitive properties of In/ZnTe/CdTe/HgCdTe structures
18.20   A.A. Guzev, V.S. Varavin, S.A. Dvoretsky, A.P. Kovchavtsev, G.L. Kuryshev, I.I. Lee,
        Z.V. Panova, Yu.G. Sidorov, M.V. Yakushev
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

У80     Refined model of generation-recombination current in IR photodiodes
18.35   A.V. Yartsev
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

У28     Localized states and submillimeter spectral range photosensitivity of
18.50   PbSnTe:In films
        A.E. Klimov, V.N. Shumsky
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

У27     Peculiarities of semiconductor materials as optical media for infrared
19.05   spectrum
        N.I. Astafiev, I.M. Nesmelova
        Federal State Unitary Enterprise “Scientific and Production Association “State Institute of
        Applied Optics”, Kazan, Russia




                                           Section Б
                                          9.30 – 12.05

У31     Photomultiplier with GaAs-photocathode and encoding anode for fast
9.30    photon counting image detector
        V.V. Bakin*, S.N. Kosolobov*, A.S. Terekhov*,**, H.E. Scheibler*, V.G. de-Bur***,
        V.L. Plokhotnichenko***, G.M. Beskin***, S.V Karpov***
        *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
        **Novosibirsk State University, Novosibirsk, Russia
        ***Special Astrophysical Observatory RAS, Nizhnij Arkhyz, Russia

У32     Photoelectrons energy distributions for multialkali photocathodes with
9.50    positive and negative electron affinities
        S.V. Zabuslayev, I.A. Nesterov, V.I. Loktionov, V.V. Bakin, H.E. Scheibler*,
        A.S. Terekhov*
        JSC “Katod”, Novosibirsk, Russia.
        *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

У38     Model of current amplification for the conductive connected channels of
10.10   MCP
        A.B. Berkin, V.V. Vasilyev
        Novosibirsk State Technical University, Novosibirsk, Russia




                                                 9
У33     A new method determining noise pulse height distribution (PHD) and S/N
10.30   of image intensifiers
        Xiang Shiming, Shi Feng, Guo Hui
        Xian Institute of Applied Optics, Xian, China

У34     Algorithm of infrared dual-band pseudo-color Image fusion based on
10.50   feature-level
        Ni Guoqiang, Qin Qingwang, Xiao Manjun
        Beijing Institute of Technology, Beijing, China

У35     Advanced, manpower and time saving testing concept for development,
11.10   production and maintenance of electro-optical systems
        Dario Cabib, R.A. Buckwald, Shimon Nirkin, Moshe                    Lavi,   Oded     Neria,
        Claudia Ben Yaakov, Efraim Tzafiir, Moshe Blau, Jacob Dolev
        CI Systems Ltd., Israel

У36     Night driver’s sight system
11.25   I.A. Veselovskiy, Ya.A. Dobrovol’skiy, N.F. Koschavtsev, V.I. Leleikin, N.M. Shustov, V.I.
        Loktionov*
        JSC “Katod” Branch “Special Design Office Of Night Vision Devices”, Moscow, Russia
        *”Katod” JSC, Novosibirsk, Russia

У37     High-precision laser technologies for producing space equipment
11.45   P.A. Vyatlev, G.M. Polishchuk, K.M. Pichkhadze, V.K. Sysoev
        Lavochkin Association, Khimki, Russia

                                  12.00 – 12.15 Coffee Break

У39     Development of optical-electronic devices for observation and aiming
12.15   purposes from single-spectrum towards single-channel multi-spectral
        systems on exemplary developments by the design department at Open
        Joint-Stock Society «ROMZ»
        A.V. Medvedev, V.D. Ivanitsky, S.N. Knyazeva
         Open Joint-stock Society «Rostov optical- mechanical plant» Rostov, reg. Yaroslavl, Russia

У40     Multispectral thermal imager with filtering mean based on inclined Fabry-
12.35   Perot interferometer
        A.N. Sviridov, A.M. Filachev, V.P. Ponomarenko, I.D. Burlakov, A.I. Dirochka
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У41     Sensing apparatus by the ground on the basis of uncooled microbolometric
12.55   FPA for space vehicles
        M.G. Pirogov, J.A. Videtskih, V.I. Fedoseev, V.I. Varlamov, S.J. Zenzinov, M.P. Kolosov,
        N.M. Strizhova, A.J. Gebgart, V.V. Denisov, M.A. Terehov
        Joint Stock Company «Geofizika - Cosmos», Moscow, Russia

У42     Gated viewing night vision device for spectral region 0.9 – 1.7 µm
13.10   V.M. Belokonev, V.G. Volkov, G.A. Leonova, V.L. Salicov
        Federal State Unitary Enterprise “ALPHA”, Moscow, Russia



                                                 10
У43     Modification Su-27 IRST basing on 768×8 dual-band linear detector
13.25   Fan hongbo Kang Rixin
        Kunming Institute of Physics, Kunming City, China

У81     The multipurpose thermovision device on the basis of a panoramic optical
13.50   tract
        L.I. Gorelik, K.M. Kulikov, A.V. Polesskij, A.S. Selivanov, A.I. Shketov
        State Scientific Center «RD&P Center «Orion», Moscow, Russia



                         14.05 – 15.30 Lunch. Posters (Section A)

У47     New 3-5 µm wavelength range hyperspectral imager for ground and
15.30   airborne use based on a single element interferometer
        Dario Cabib, Amir Gil, Moshe Lavi, Robert A. Buckwald, Stephen G. Lipson*
        CI Systems Ltd., Israel
        *Physics Department, Technion-Israel Institute of Technology, Haifa, Israel

У44     The research of technological opportunities of multispectral IR-devices
15.50   creation
        V.V. Potelov, B.N. Senik
        JSC «Krasnogorsky Zavod», Krasnogorsk, Moscow Reg., Russia

У45     Low-frequency noise in thermal Imager on the basis of 256x256 LWIR
16.10   Staring FPA
        K.O. Boltar, I.D. Burlakov, A.M. Filachev, V.V. Poluneev, V.P. Ponomarenko,
        N.I. Iakovleva
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У46     The IR camera for a spectral range on 3-5 microns on photoreception matrix
16.30   made on the base of InSb
        V.N. Soljakov, L.I. Gorelik, M.V. Kortikov, A.V. Polesskij, A.V. Poltoratskij
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У48     The intellectual system for safe vehicles drive control
16.50   A.M. Filachev, V.P. Ponomarenko, L.I. Gorelik, A.A. Boguslavskij*, С.М. Sokolov*,
        A.K. Platonov*, K.I. Kij*
        State Scientific Center «RD&P Center «Orion», Moscow, Russia
        *Institute of the Practical Mathimatics by the name of. M.V.Keldysh of the Russian Academy of
        Science, Moscow, Russia

У49     Systems of the thermal control of new generation for RRW
17.10   D.A. Gindin, V.P. Ezhov, A.A. Gribanov, Yu.N. Dolganin, V.V. Кarpov, M.E. Kozyrev,
        O.L. Kolganov, V.P. Korolkov, N.S. Kuznetsov, M.A. Savchenko
        JSC "МZ" Sapphir ", Moscow, Russia



                                  17.20 – 17.35 Coffee Break


                                                  11
У71     Amplitude and statistical characteristics of single quantum photodetectors
17.35   Zenevich A.O.
        Higher state college of Communication, Minsk, Belarus

У51     Optimal cold shield for IR FPA
17.55   A.I. Patrashin
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У52     Investigations of IR images tunable filter based on inclined interferometer
18.15   A.N. Sviridov, K.M. Kulikov, A.S. Kononov, L.D. Saginov, A.S. Selivanov
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У53     Microscope spectrum analyzer for microobject’s spectral properties
18.35   exploration.
        N.A. Kolotovoiy
        “ Labmetod”, Moscow, Russia



                              18.45 – 20.00 Posters (Section А)




                                Thursday, May 29 (Section А)
                                           9.30 – 12.00

П14     Nonconventional methods of thermal management for elements of photo-
9.30    and microelectronics
        L.P. Bulat
        St. Petersburg State University of Refrigeration, St. Petersburg, Russia

У54     Thermoelectric sensors based on materials with anisotropic thermoEMF
9.55    L.I. Anatychuk, A.V. Pribyla
        Institute of Thermoelectricity, Chernovtsy, Ukraine

У57     Status and future trends development of Split-Stirling microcryogenic
10.15   systems for cooling FPA
        M.V. Lipin, A.V. Gromov
        Scientific and Technical Complex “Cryogenic Technique” Ltd., Omsk, Russia

У55     Microminiature linear Split Stirling cryogenic cooler for portable infrared
10.35   imagers
        A Veprik, H Vilenchik, S Riabzev, N Pundak
        Ricor, Cryogenic and Vacuum Systems, Israel




                                                  12
У56     Design of a construction and technique of fabrication of the unified
10.55   number of all-metal cryostats for IR-photodetectors MW&LW spectral
        range
        D.A. Gindin, V.P. Yezhov, V.V. Karpov, V.S. Krasheninnikov, N.S. Kuznetcov,
        V.I. Petrenko
        JSC “MZ “Sapphir”, Moscow, Russia

У58     Cryogenic radiative cooler optimization
11.10   A.I. Abrosymov, A.A. Verlan, G.M. Polishchuk, K.M. Pichkhadze, V.K. Sysoev
        Lavochkin Association, Khimki, Russia

У59     Thermoelectric cooling for detector applications
11.25   G.G. Gromov, L.B. Ershova
        RMT Ltd, Moscow, Russia

У60     Throttle cooling systems based on the tank with cryogenic refueling
11.40   A.I. Dovgyallo, A.P. Logashkin, D.V. Sarmin, D.A. Uglanov
        Samara State Aerospace University, Samara, Russia



                                 11.55 – 12.10 Coffee Break

У61     Metal - Cadmium Mercury Telluride contacts
12.10   V.I. Stafeev
        State Scientific Center «RD&P Center «Orion», Moscow, Russia

У62     Growth of CdHgTe epitaxial structures by combination the methods of
12.30   LPE and MOCVD for IR-detectors with narrow spectral characteristic
        A.P. Kotkov, N.D. Grishnova, A.N. Moiseev, I.A. Denisov*, N.A. Smirnova*,
        N.I. Shmatov*
        Institute of Chemistry of High-Purity Substances of RAS, N. Novgorod, Russia
        *FSUE "GIREDMET", Moscow, Russia

У63     The development of technology elements of monolithic HgCdTe
12.45   photodetector
        M.V. Yakushev, S.A. Dvoretski, A.I. Kozlov, Y.G. Sidorov, V.S. Varavin, V.V. Vasilyev,
        B.I. Fomin, A.L. Aseev
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

У64     MBE growth of nanoheteroepitaxial HgCdTe structures
13.00   V.S. Varavin, S.A. Dvoretsky, N.N. Mikhailov, V.G. Remesnik, Yu.G. Sidorov
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

У65     MBE heteroepitaxial MCT structures with internal short-wavelength cut-
13.25   off filter
        Dvoretsky S.A., Mikhailov N.N., Remesnik V.G., Predein A., Suslyakov A.O., Vasiliev V.V.
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia




                                                13
У66     Ion etching study of the defect structure of CdxHg1-xTe films grown by
13.40   molecular beam epitaxy
        I.I. Izhnin, E.S. Ilyina, K.R. Kurbanov, S.A. Dvoretsky*, N.N. Mikhailov*, Yu.G. Sidorov,
        V.S. Varavin*, K.D. Mynbaev**, M. Pociask***
        R&D Institute for Materials SRC "Carat", Lviv, Ukraine
        *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
        **
            Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia
        Ioffe Physical-Technical Institute of RAS, St. Petersburg, Russia
        ***Institute of Physics, Rzeszów University, Rzeszów, Poland

У67     Heteroepitaxial PbSnTe:In/BaF2/CaF2/Si structures for photodetector
13.55   arrays sensitive up to 16 μm
        A.N. Akimov, A.E. Klimov, S.P. Suprun, and V.N. Shumsky
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia


                          14.10 – 14.45 Lunch Posters (Section Б)
                                        15.30 Excursion

                                         Friday, May 30
                                           9.30 –11.35

П12     The necessity and prospects of developments of large focal surfaces with
9.30    solid state photodetectors for systems of RSO detection out of atmosphere
        V.G. Ivanov*, A.A. Kamenev*, R.M. Stepanov
        OJSC “NRI Electron”, St. Petersburg, Russia
        *NIC of 4NRI Ministry of Defense, St. Petersburg, Russia

П13     High power mid-infrared LED,s (1.6-4.6 m) based on the III-V
9.55    heterostuctures for metrological application
        Yury P.Yakovlev
        Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia

У68     The ultraviolet photodetectors based on wide-band gap semiconductor
10.20   materials
        T.V. Blank, Yu.A. Goldberg
        Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia

У69     Photovoltaic detector based on asymmetric p-InAs/AlSb/InAsSb/AlSb/
10.40   p-GaSb heterostructure with a single quantum well for 1.5-3.6 µm spectral
        range
        M.P. Mikhailova, I.A. Andreev, K.D. Moiseev, Yu.P. Yakovlev, E. Hulicius*,
        A. Hospodkova*, J. Pangrac*, K. Melichar*, T. Simecek*
        Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia
        Institute of Physics, AS CR, Prague, Czech Republic

У70     The multicascade avalanche photodiode
11.00   A.I. Patrashin
        State Scientific Center «RD&P Center «Orion», Moscow, Russia



                                                 14
У50     Thermomechanical nano-membrane IR image sensors
11.15   V. Bespalov, V. Fedirko, E. Fetisov
        Moscow Institute of Electronic Technology, Zelenograd, Moscow, Russia


                                 11.30 – 11.45 Coffee Break
У72     Broad band InAsSb backside illuminated photodiodes with a cut-off
11.45   wavelength of 4.5 μm
        B.A. Matveev, A.L. Zakgeim, N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev,
        M.A. Remennyi, N.M. Stus’, A.E. Cherniakov
        Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia

У73     Characteric’s research of Shottky barrier Ni-ZnSe structures and energy
12.00   selective ultra violet photodiode’s technology
        V.L. Perevertailo, Yu.G. Dobrovol’skiy, B.G. Shabashkevich
        NSA Ukraine, “Tenzor”, Chernovtsy

У74     Chemical passivation of GaSb/GaInAsSb/GaAlAsSb photodiodes
12.15   E. Kunitsyna, I. Andreev, T. L’vova, Y. Yakovlev
        Ioffe Physico-Technical Institute RAS, St. Petersburg, Russia

У75     Multielement IR detectors with Shottky barrier sensitive to radiation with
12.30   quantum energy less than height of potential barrier
        V.G. Ivanov, G.V. Ivanov, A.A. Kamenev, V.A. Arutjunov*, R.M. Stepanov*,
        V.I. Panasenkov*
        Research Centre – branch 4 of Ministry of Defense NRI, St. Petersburg, Russia
        *OJSC “NRI Electron”, St. Petersburg, Russia

У76     Infrared radiation detectors for optical engineering
12.45   G.V. Chekanova, E.R. Globus, A.A. Komov and M.S. Nikitin
        Federal State Unitary Enterprise “ALPHA”, Moscow, Russia

У77     Long term stability photoresistors of the spectral range 8-12 m on base of
13.00   MCT heterostructures, grown by MBE on the GaAs substrate
        N.M. Akimova A.V. Gusarov, V.V. Кarpov, V.V. Krapukhin, E.V. Susov, A.V. Filatov
        V.S. Varavin*, Ju.G. Sidorov*
        JSC"МZ" Sapphir ", Moscow, Russia
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

У78     SPRITE detectors based on HgCdTe heteroepitaxial structures grown by
13.15   MBE
        A.A. Komov, A.A. Drugova, G.V. Chekanova, M.S. Nikitin and I.Yu. Lartsev
        Federal State Unitary Enterprise “ALPHA”, Moscow, Russia

У79     Compensation, charge trapping and efficiency of CdTe detectors
13.30   V.N. Babentsov, F.F. Sizov
        V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

13.45   Closing of the Conference


                                                 15
                                        Posters
                                       Section А
                                 Wednesday, May 28

А01   A new method of numerical analysis of stationary fluctuation phenomena
      in the semiconductor structures and devices
      A.Yu. Selyakov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А02   Background      irradiance    calculation          method      for   IR   array
      with arbitrary shape cold diaphragm
      A.I. Patrashin
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А03   Background irradiance of an IR FPA with cold screens of the preset types
      A.I. Patrashin
      State Scientific Center «RD&P Center «Orion», Moscow, Russia




                                           16
А04   Two-spectral photodetector module
      V.D. Bochkov, J.S. Bichkovsky, B.N. Drazhnikov, P.A. Kuznetsov, I.V. Efimov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А05   Photodetector linear arrays for thermal direction-finding equipment
      V.D. Bochkov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А06   Antireflection coating thermocycling stability of IR-photodetectors
      sensitive element
      K.O. Boltar, V.I. Stafeev, M.V. Sednev
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А07   Аstronomical observations 125-cm telescope Sternberg Astronomical
      Institute with InSb FPA 256x256 camera
      N.V. Kravchenko, V.F. Chishko, I.L. Kasatkin, I.A. Maslov*, A.E. Nadjip*,
      O.G. Taranova*, A.M. Tatarnikov*
      State Scientific Center «RD&P Center «Orion», Moscow, Russia
      *Sternberg Astronomical Institute, Moscow State University

А08   256x256 InSb focal plane array for astronomical applications
      N.V. Kravchenko, V.F. Chishko, I.L. Kasatkin, A.A. Lopukhin, A.A. Ryabova,
      A.E. Nadjip*, A.M.Tatarnikov*
      State Scientific Center «RD&P Center «Orion», Moscow, Russia
      * Sternberg Astronomical Institute, Moscow State University

А09   FPA cold shield inside forming
      L.V. Kiseleva, A.V. Savostin, I.L. Kasatkin
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А10   FPA indium microcontacts formation of by ion etching
      M.V. Sednev, K.O. Boltar, J.S. Mezin
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А11   Resticking technology for manufacture FPA on basis InSb
      L.M. Khitrova, L.V. Kiseleva, Chishko V.F., Kasatkin I.L.
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А12   Energy band diagrams of heterostructure p-CdxHg1-xTe/CdTe
      S.V. Golovin, A.S. Kashuba
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А13   The indium plastic properties at focal plane arrays hibridisation
      V.M. Efimov, D.G.Esaev
      Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А14   In situ doping of HgCdTe/Si grown by MBE
      S.A. Dvoretsky, M.V. Yakushev, A.V. Sorochkin, V.S. Varavin, Y.G. Sidorov
      Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia




                                              17
А15   The fabrication CdHgTe 128x128 focal plane arrays
      Z.F. Tsybrii, M.V. Vuichyk, Ye.O. Bilevych, M.V. Apatskaya, M.I. Smolii, E.V. Anrdreeva,
      I.O. Lysuk
      V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

А16   The selective growth of HgCdTe/Si(310) epilayers by MBE
      M.V. Yakushev, S.A. Dvoretsky, Y.G. Sidorov, B.I. Fomin
      Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А17   Using of the mineral acids mixtures for the chemical treatment of the CdTe
      and Сd0.22Hg0.78Te single crystals
      Z.F. Tomashik, G.М. Okrepka, V.N. Tomashik, E.M. Lukiyanchuk, V.I. Мorozovskaya
      V.Ye.Lashkaryov Institute for Semiconductor Physics of NAS of Ukraine,

А18   Deep group-III impurity centers in PbTe doped by various techniques
      T.L. Petrenko, S.V. Plyatsko, F.F. Sizov
      V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

А19   One approach to decoding of multizonal images
      R.M. Aleev, V.B. Fofanov
      «Ural Optical & Mechanical Plant – Institute for Applied Optics» (FSUE branch «Industrial
      Association Ural Optical & Mechanical Plant»), Kazan, Russia

А20   Basic principles of infrared imaging devices (IID) with open module
      architecture
      R.M. Aleev, D.R. Aleev
      «Ural Optical & Mechanical Plant – Institute for Applied Optics» (FSUE branch «Industrial
      Association Ural Optical & Mechanical Plant»), Kazan, Russia
      *M.M. Gromov Test Flight Institute, Zhukovskii, Moscow Region, Russia

А21   Open and interdependent architecture of infrared imagers
      R.M. Aleev
      «Ural Optical & Mechanical Plant – Institute for Applied Optics» (FSUE branch «Industrial
      Association Ural Optical & Mechanical Plant»), Kazan, Russia

А22   Modeling of IR CdHgTe photodiode with step-like profile of band gap
      gradient
      B.S. Sokolovsky, V.K. Pysarevsky
      Ivan Franko National University, Lviv, Ukraine

А23   The infrared images simulator
      V.G. Matyuchenko, U.N. Dmitrievskiy
      State Research Institute of Aviation Systems (GosNIIAS), Moscow, Russia

А24   Layers HgCdTe preforming singularity by liquid phase epitaxy
      E.K. Guseinov, A.A. Radzhabli, T.I. Ibragimov
      Physical Institute of NAS, Baku, Azerbaijan

А25   Calculation technique of IR array parameters
      A.I. Patrashin
      State Scientific Center «RD&P Center «Orion», Moscow, Russia


                                              18
А26   The detector of submillimetric radiation on the base of CdxHg1-xTe (х  0.2)
      F.F. Sizov, V.V. Zabudsky, A.B. Smirnov, J.V. Gumenjuk-Sichevska, N.I. Momot
      V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

А27   HgCdTe MBE heteroepitaxial photodiode current mechanisms
      J.V. Gumenjuk-Sychevskaja, V.V. Vasiliev*, S.A. Dvoretsky*, V.V. Zabudskii, I.A. Lysjuk,
      N.N. Mikhailov*
      V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
      *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А28   The use of indium bumps reflowing for the technology assembly IR FPA
      A.R. Novoselov, N.B. Kuzmin, V.V. Vasilyev, N.A.Valisheva
      Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А29   Optimization of indium bumps welding temperature for FPA
      A.R. Novoselov, A.V. Predein, I.G. Kosulina, V.V. Vasilyev
      Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А30   Investigation of the MIS structures of MBE HgCdTe – anodic oxide
      V.V.Vasilyev, Yu.P.Mashukov
      Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А31   CMOS multiplexor with delta-sigma ADC cell elements
      D.V. Borodin, Y.V. Osipov., B.A. Samotaev
      FSUE “S&EP “Pulsar”, Moscow, Russia
      “RTC Impex” Ltd, Moscow, Russia

А32   Submatrix array1х128 (1х256) on the basis of PbSe row and CMOS
      multiplexor
      D.V. Borodin, Y.V. Osipov, G.H. Avetisjan, E.R. Globus, V.M. Belokonev,
      G.V. Chekanova, B.A. Samotaev
      FSUE “S&PE “Pulsar”, Moscow, Russia
      Federal State Unitary Enterprise “ALPHA”, Moscow, Russia
      “RTC Impex” Ltd, Moscow, Russia

А33   Microcryogenic system for cooling FPA and theirs modules
      A.V. Samvelov, K.V. Slovesnov, D.A. Shirokov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А34   Diamond-like    anti-reflection              coating     for      IR      photodetector
      CdхHg1-хTe/Cd1-хZnхTe
      F.F. Sizov, N.I. Klui, A.N. Lukyanov, R.K. Savkina, A.B. Smirnov, A.Z. Evmenova
      V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

А35   The information systems television channel for modern mobile platforms
      P.A. Aldohin, P.V. Zhuravlev, V.A. Voitov*, E.V. Degtyarev*, A.V. Turbin, S.M. Churilov,
      V.B. Shlishevskiy
      NB of Institute of Semiconductor Physics SB RAS, Novosibirsk Russia
      *Federal State Organization «22 Central Scientific Research Test Institute of The Defence
      Ministry of Russian Federation» Mutishy, Russia



                                              19
А36   Thermal imagers for land-based mobile platforms
      P.V. Zhuravlev, V.A. Voitov*, E.V. Degtyarev*, V.A. Moiseev, L.K. Popov, E.A. Tereshin,
      V.N.Fedorinin, K.P. Shatunov
      NB of Institute of Semiconductor Physics SB RAS, Novosibirsk Russia
      *Federal State Organization «22 Central Scientific Research Test Institute of The Defence
      Ministry of Russian Federation» Mutishy, Russia

А37   The bake-stability of electrical parameters of heterostructures HgCdTe
      MBE and photodetectors on their basis
      D.V. Brunev, V.S. Varavin, V.G. Remesnik, G.Yu. Sidorov, A.O. Suslyakov
      Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А38   Uncooled Photoconducting Device on the Basis of Cd0.167Hg0,833Te in the
      transverse magnetic field
      A.A. Aliyev, T.I. Ibragimov, Sh.M. Kuliyev, A.K. Mamedov, E.K. Huseynov
      Institute of Physics of the NAS, Baku, Azerbaijan

А39   Gas cooled Dewar for second generation of infrared focal plane arrays
      P.P. Dobrovolsky, A.S. Rafailovich, A.P. Antsiferov, D.V. Brunev, S.A. Dvoretsky,
      V.S. Varavin, Yu. G. Sidorov
      Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А40   Linear CCDs and photodetector modules based on them
      V.A. Arutjunov, N.G. Bogatyrenko, I.S. Vasilyev, E.U. Ilysavskaya, A.E. Prokofiev
      OJSC “NRI Electron”, Saint-Petersburg, Russia

А41   Uncooled pyroelectric IR-array based on barium strontium titanate with
      higher sensitivity in 2…24 μm range
      S.A. Moroz
      OJSC “ NRI Electron”, St. Petersburg, Russia

А42   Linear uncooled microbolometer array based on SOI
      A.M. Belin, Y.A. Klimov, C.V. Kuzmin, V.M. Malyshev
      LLC "Unique IC’s", Zelenograd city, Russia

А43   Simulation model of staring and scanning optical-electronic devices
      Zhidkov P.M., Krasotkin V.S., Prokofyeva V.V., Boroshnev A.V., Kuzmina I.V.*
      Central Recearch&Development Institute «Kometa», Moscow, Russia
      *MIREA, Moscow, Russia

А44   Measurement stand for ROIC of FPA parameter’s
      S.E. Dukhnin, V.V. Zabudskiy*, A.S. Stanislavskiy, A.G. Golenkov*, S.V. Korinez,
      V.P. Reva
      SE “Research&Development Institute of Microdevices”, Kiev, Ukraine
      *V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine

А45   The influence of a growth surface morphology CdхHg1-хTe epitaxial layers
      on passivating coating quality and FPA parameters
      I.D. Burlakov, A.S. Kashuba, E.V. Permikina
      State Scientific Center «RD&P Center «Orion», Moscow, Russia



                                              20
А46   The research of the technological regime influence on the passivation
      coating performances
      I.D. Burlakov, A.S. Kashuba, E.V. Permikina
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А47   The unique properties of the micro and nanocontacts of the metal -
      semiconductor
      R.K. Mamedov
      Baku State University, Baku, Azerbaijan

А48   MCT FPAs crosstalk investigations
      K.O. Boltar, N.I. Iakovleva
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А49   Effect of thermal annealing on the optical and photo-electrical properties
      of Cd–Hg–Te heterostructures for photo– and optoelectronic mid-infrared
      devices
      A.I. Izhnin, I.I. Izhnin, V.I. Ivanov-Omskii*, N.L. Bazhenov*, K.D. Mynbaev*,
      V.A. Smirnov*, V.S. Varavin**, N.N. Mikhalov**, G.Yu. Sidorov**
      R&D Institute for Materials SRC "Carat", Lviv, Ukraine
      *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
      **Ioffe Physical-Technical Institute of RAS, St.-Petersburg, Russia

А50   Defective pixels detection at IRFPA two-point correction
      K. Boltar, R. Grachev, V. Poluneyev
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А51   Investigation of the properties of CdHgTe epitaxial layers in hybrid
      heterocompositions grown by the methods of LPE and MOCVD
      A.P. Kotkov, N.D. Grishnova, A.N. Moiseev, I.A. Denisov*, N.A. Smirnova*,
      N.I. Shmatov*, A.G. Belov*, N.A. Pashkova*
      Institute of Chemistry of High-Purity Substances of RAS, N. Novgorod, Russia
      *FSUE "GIREDMET", Moscow, Russia

А52   Microcryogenic coolers for IR photodetectors
      A.N. Senkovsky, V.S. Gabaidullin, V.V. Probylov and O.V. Lebedeva
      Federal State Unitary Enterprise “ALPHA”, Moscow, Russia

А53   Prospects of fianite use as the material of micro- and photoelectronics for
      photodetectors production
      A.N. Buzynin, N.B. Kravchenko*, E.E. Lomonova, M.S. Sidorov, M.A. Trishenkov*,
      A.M. Filachev*, P.E. Khakuashev*
      IOF RAS, Moscow, Russia
      *State Scientific Center «RD&P Center «Orion», Moscow, Russia

А54   Failure analysis of specialized ROIC and processing responses of IR FPA
      V.M. Akimov, N.N. Dremova, S.N. Jakunin
      State Scientific Center «RD&P Center «Orion», Moscow, Russia




                                                21
А55   Structured singularity’s of heterocompositions growned by MBE
      N.N. Dremova, S.N. Jakunin
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А56   The photoelectronic ultra wide FOV module for a spectral range 0,8…11,0
      microns
      L.I. Gorelik, K.M. Kulikov, J.P. Sharonov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А57   Photodetectos from HgCdTe heterojunction structures of a range 3÷5 m
      various topology with thermoelectric cooling
      N.M. Akimova, Yu.N. Dolganin, V.V. Кarpov, V.P. Korolkov, M.A. Savchenko,
      V.S. Varavin*, S.A. Dvoretsky*, N.N. Mikhailov*, Yu.G. Sidorov*, M.V. Yakushev*
      JSC"МZ" Sapphir ", Moscow, Russia
      *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А58   Multispectral multiple Hg1-xCdxTe                 PD     with        topology      3×4×288
      for a spectral range 8÷12 m
      Yu.N. Dolganin, V.V. Кarpov, A.Yu. Nikiforov, V.V. Vasiliev*, T.I. Zachariash*,
      A.U. Klimenko*, A.O. Susliakov*
      JSC ”MZ”Sapphir”, Moscow, Russia
      *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А59   Vacuum cryostat with a filter for a format 2×4×576
      Yu.N. Dolganin, V.V. Кarpov, M.E. Kozyrev, V.S. Krasheninnikov, N.S. Kuznetsov
      JSC ”MZ”Sapphir”, Moscow, Russia

А60   Development of recalculation method of the passport features IR FPA to
      the type suitable for use in designing IR laser location equipment
      R.O. Stepanov
      JSC ”MZ”Sapphir”, Moscow, Russia

А61   The development of the analysis methods of the reflective features IR FPA
      and imaging systems which built on its base, for forecasting of the
      possibility of the finding such systems by laser location methods
      R.O. Stepanov
      JSC ”MZ”Sapphir”, Moscow, Russia

А62   Full-scale production development of cooled array photodetector device
      module (МФПУ 2 ОМ)
      V.V. Karpov, V.I. Petrenko, A.P. Lytkin, V.P. Shyryaev, N.S. Kuznetsov, V.I. Semenov,
      P.R. Mashevich*, V.P. Zolotarev*
      JSC JSC ”MZ”Sapphir”, Moscow, Russia
      *JSC “Angstrem”, Moscow, Russia

А63   Full-scale production development of digital signal processing module
      (ЦОС-1)
      V.V. Karpov, V.I. Petrenko, A.P. Lytkin, V.P. Shyryaev, Chish K.V.
      JSC ”MZ”Sapphir”, Moscow, Russia




                                             22
А64   The optical probe for measuring of photoelectric coupling coefficient of
      MWIR and LWIR focal plane arrays
      R.O. Stepanov, V.I. Semenov, V.A. Tegay
      JSC ”MZ”Sapphir”, Moscow, Russia

А65   Problems of optimization of power supply regimes of thermoelectric
      photoreceiver coolers in the optoelectronic equipment structure
      C.A. Arakelov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А66   Description possibility avalanche p-i-n photodiodes Geiger mode using
      elementary functions
      V.А. Kholodnov
      Institute of Radio Engineering and Electronics of RAS, Moscow, Russia

А67   Mercury-cadmium-tellurium and manganese-mercury-tellurium epitaxial
      surfaces layers study with atomic-force microscopy
      I.M. Nesmelova, G.G. Gumarov*, V.N. Ryzhkov, V.Yu. Petukhov*, V.А. Andreev,
      А.P. Chuklanov*
      Federal State Unitary Enterprise “Scientific and Production Association “State Institute of
      Applied Optics”, Kazan, Russia
      *Kazan Physical-Technical Institute of RAS, Kazan, Russia

А68   Development of basic technologies of fianite applying as a passivative and
      protective photodetectors covering
      A.N. Buzynin, T.N. Grishina*, L.A. Kosukhina*, E.E. Lomonova, M.S. Sidorov*,
      M.A. Trishenkov*, A.E. Troshkov*, I.V. Chinareva*
      IOF RAS, Moscow, Russia
      *State Scientific Center «RD&P Center «Orion», Moscow, Russia

А69   IR range receiving devices based on antenna array’s
      A.N. Sviridov, V.P. Babenko*
      State Scientific Center «RD&P Center «Orion», Moscow, Russia
      *Moscow Institute of Radio-engineering, Electronics and Automation, Moscow, Russia

А70   Reliability characteristic estimating method based on electric parameter’s
      dependence on operating time
      I.D. Burlakov, K.O. Boltar, A.I. Patrashin, E.V. Degtyarev*, А.А. Solodkov*
      State Scientific Center «RD&P Center «Orion», Moscow, Russia
      *Federal State Organization «22 Central Scientific Research Test Institute of The Defence
      Ministry of Russian Federation», Mutishy, Russia

А71   Accelerated test methods of IR FPA fail-safety test
      I.D. Burlakov, K.O. Boltar, A.I. Patrashin, E.V. Degtyarev*, А.А. Solodkov*
      State Scientific Center «RD&P Center «Orion», Moscow, Russia
      *Federal State Organization «22 Central Scientific Research Test Institute of The Defence
      Ministry of Russian Federation», Mutishy, Russia




                                              23
А72   Relaxation of current in low background extrinsic silicon photoconductor
      detectors at liquid helium temperatures
      N.B. Zaletaev
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А73   The block of electronic processing of signals from the matrix
      photoreception device
      V.N. Sojiakov, M.V. Kortikov, O.V. Kataev*, I.V. Petruchuk*, G.L. Trunov*,
      P.A. Solomatin*, A.V. Bovkun*, M.V. Petruchuk*
      State Scientific Center «RD&P Center «Orion», Moscow, Russia
      *MCS Research Institute, Taganrg, Russia

А74   Development of application specific design library for FPA readout
      integrated circuit
      S.S. Khromov, A.A. Zaitsev
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А75   Engineering analysis of photo-receiving device’s construction with
      integrated micro cooler system
      D.N. Shimko
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

А76   Luminescent characterization of CdxHg1-xTe films grown by molecular
      beam epitaxy
      V.I. Ivanov-Omskii, N.L. Bazhenov, K.D. Mynbaev, V.А. Smirnov, V.S. Varavin*,
      N.N. Mikhailov*, G.Yu. Sidorov*
      A.F. Ioffe Physico-Technical institute, Russian Academy of Sciences, St. Petersburg, Russia
      *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А77   Research of electrophysical properties of MIS-structures on the basis of
      HES HgCdTe MBE
      A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.V. Vasilev*, V.S.Varavin*,
      S.A. Dvoretsky*, N.N. Mikhailov*, Yu.G. Sidorov*, Yu.P. Mashukov*, M.V.Yakushev*
      ASD ”SPTI TSU”, Tomsk, Russia
      *
        Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А78   Photoelectric characteristics of MIS-structures on the basis of HES
      HgCdTe MBE
      A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.V. Vasilev*, V.S.Varavin*,
      S.A. Dvoretsky*, N.N. Mikhailov*, Yu.G. Sidorov*, Yu.P. Mashukov*, M.V. Yakushev*
      ASD ”SPTI TSU”, Tomsk, Russia
      *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А79   The features of donor centers distribution in p-type MBE MCT graded
      band-gap epilayers at ion beam etching and boron ion implantation
      A.V. Voitsekhovskii, D.V. Grigorjev, A.P. Kohanenko, A.G. Korotaev, V.S. Volkov,
      V.G. Sredin*, N.H. Talipov*, I.I. Izhnin**
      ASD ”SPTI TSU”, Tomsk, Russia
      *Military Academy RFSP of the Great Peter, Moscow, Russia
      **SIE "KARAT", Lviv, Ukraine



                                              24
А80   Efficiency of solar energy conversion by Si solar cell with Ge quantum dots
      A.V. Voitsekhovsky, D.V. Grigorjev, O.P. Pcheljakov*, A.I. Nikiforov*
      ASD ”SPTI TSU”, Tomsk, Russia
      *Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia

А81   CdTe as a passivant in heterostructure СdTe/HgCdTe
      I.S. Virt, I.V. Kurilo*, I.O. Rudyi*, I.Ye Lopatynskyi*, N.N. Berchenko**, ****
      F.F. Sizov**, N.N. Mikhailov***, R.N. Smirnov***
      Drogobych State Pedagogical University, Drogobych, Ukraine
      *National University "Lviv Polytechnica", Lviv, Ukraine
      ** V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
      ***Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
      ****Institute of Physics, Rzeszow University, Rzeszow, Poland


                                         Section Б
                                   Thursday, May 29

Б01   Injection and thermoactivation currents in monocrystals TlInS2
      A.A. Ismailov, N.D. Achmedzade, M.M. Shirinov
      Institute of Physics of NAS, Baku, Azerbayjan

Б02   High-precision laser rangefinder
      Kh.A. Asadov, F.I. Kasimova, N.H. Javadov*
      National Aerospace Agency, Baku, Azerbaijan
      *National Aviation Academy , Baku, Azerbaijan

Б03   Increasing of efficiency of charge transfer with assistant of two-channel
      CCD
      N.H. Javadov, E.S. Mamedov
      National Aviation Academy , Baku, Azerbaijan
      Technical University, Baku, Azerbaijan

Б04   Increasing of sensitivity of thermal radiation detectors
      A.M. Pashaev, F.D. Kasimov, E.T. Gasarkhanov
      National Aviation Academy, Baku, Azerbaijan

Б05   Multispectral assembly for optical image’s filtering
      A.N. Sviridov, A.M. Filachev, V.P. Ponomarenko, A.S. Kononov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б06   Metamaterial optical-electronic device with nanodimensional layer for
      optical radiation λ=10,6 μm control
      A.N. Sviridov, V.P. Ponomarenko, A.S. Kononov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia




                                              25
Б07   Feature fabrication of two-dimensional radiation detector based on
      semiconductor films with anomalous photo voltage
      N.R. Rakhimof, O.K. Ushakov, B.N. Rakhimof
      SGGA, Novjsibirsk, Russia
      PI, Fergana, Uzbekistan

Б08   Longitudinal capillary canals for heat pipes designed for thermal control
      system
      A.I. Abrosymov, V.K. Sysoev, A.A. Verlan, N.N. Zubkov*, U.N. Bulkin**
      Lavochkin Association, Khimki, Russia,
      *MVTI named after N.E. Bauman, Moscow, Russia
      **RFNTS-VNIIEF, Sarov, Russia

Б09   Acousto-electronic interaction and piezo-properties of ε-GaSe
      G.I. Abutalybov, S.Z. Dzhafarova, N.A. Ragimova*
      Institute of Physics of the NAS, Baku, Azerbaijan
      *Baku State University, Baku, Azerbaijan

Б10   Low profile night vision goggles
      V.M. Belokonev, V.G. Volkov, G.A. Leonova, V.L. Salicov
      Federal State Unitary Enterprise “ALPHA”, Moscow, Russia

Б11   Unified TV guide system for observations of stars with large optical
      telescopes
      V.V. Komarov
      Special Astrophysical Observatory of RAS, N-Arkhyz, KChR, Russia

Б12   Research of one of the first EM-CCD CCTV cameras in observations of
      celestial objects
      V.V. Vlasjuk, V.V. Komarov, A.F. Fomenko, V.S. Shergin
      Special Astrophysical Observatory of RAS, N-Arkhyz, KChR, Russia

Б13   Developing of the night sky vision systems for real-time remote monitoring
      of overcast condition
      V.V. Vitkovskij, V.V. Vlasjuk, V.V. Komarov, A.F. Fomenko, V.S. Shergin
      Special Astrophysical Observatory of RAS, N-Arkhyz, KChR, Russia

Б14   Modification photocurrent spectrum’s of single crystal TlGaSe2 doped Fe
      S.N. Mustafaeva, A.I. Gasanov, E.M. Kerimova
      Institute of Physics of NAS, Baku, Azerbayjan

Б15   Planar magnetron use for micron and nanometer thickness ferromagnetic
      film deposition
      A.N. Yurkov, T.V. Vlasova, G.A. Krikunov, M.A. Kononov
      A.M. Prokhorov´s General Physics Institute RAS, Moscow Russia

Б16   The influence of the surface conductivity of a semiconductor electrode on
      the distribution of the gas-discharge current
      V.I. Orbukh, N.N. Lebedeva, Ye.Yu. Bobrova
      Baku State University, Baku, Azerbaijan



                                            26
Б17   Asymmetry of the current-voltage characteristics of the gas-discharge
      structure with a semiconductor electrode
      N.N. Lebedeva, V.I. Orbukh, Ye.Yu. Bobrova, G.M. Eivazova
      Baku State University, Baku, Azerbaijan

Б18   Regularizing of persistence of the IR-photosensitivity in layered crystals of
      InSe
      A.Sh. Abdinov, R.F. Babayeva, R.M. Rzaev
      Baku State University, Baku, Azerbaijan

Б19   Dependence of breakdown voltage of Schottky diodes from the geometrical
      size of the contact
      A.R. Aslanova, T.H. Ismailov
      Baku State University, Baku, Azerbaijan

Б20   Polarizer for extracting of optical radiance given polarization component
      R.M. Kasimov, R.A. Karamaliev
      Institute of Chemical problems NAS, Baku, Azerbaijan
      Baku State University, Baku, Azerbaijan

Б21   The absorption by free carriers in thin films n-Ag4STe
      Sh. Alekperova, A. Aliev, I. Akhmedov, G. Gadjieva, Kh. Djalilova
      Institute of Physics of the NAS, Baku, Azerbaijan

Б22   Infra-red objectives encapsulation problems
      S.V. Solk, V.E. Sabinin, A.A. Yakovlev
      FSUE OEP, Sosnovyiy Bor, Leningrad region, Russia

Б23   Diaphragm leafs fabrication technology
      V.S. Makin, Yu.I. Pestov, S.V. Solk
      FSUE OEP, Sosnovyiy Bor, Leningrad region, Russia

Б24   Optical coating’s inspection resistance to dust dynamic force
      V.E. Sabinin, S.V. Solk
      FSUE OEP, Sosnovyiy Bor, Leningrad region, Russia

Б25   Analysis of the main steps of technical and economic assessment of
      management decision on high-tech enterprise
      M.D. Korneeva, A.I. Dvorak, G.L. Maslennikova, M.V. Grigorjeva, G.V. Korneeva
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б26   Features of building and protecting enterprises’ intellectual property for
      raising competitive capability of these enterprises
      M.D. Korneeva, A.I. Dvorak, G.L. Maslennikova, M.V. Grigorjeva, G.V. Korneeva
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б27   Factors and methods of estimate influenced on product competitiveness,
      and activities for raising the competitive capability
      M.D. Korneeva, A.I. Dvorak, G.L. Maslennikova, M.V. Grigorjeva, G.V. Korneeva
      State Scientific Center «RD&P Center «Orion», Moscow, Russia



                                                27
Б28   Method of productive activity estimate on high-tech scientific production
      enterprise
      M.D. Korneeva, A.I. Dvorak, G.L. Maslennikova, M.V. Grigorjeva, G.V. Korneeva
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б29   Limiting resolution meseaurnents of optical elements in infra-red spectrum
      range
      V.S. Nuzhin, S.V. Solk, V.E. Sabinin
      FSUE OEP, p. Sosnovyiy Bor, Leningrad region, Russia

Б30   Recent progress and development tendency of SoS technology
      O.N. Ermakov , A. P. Karatsyuba , A. Yu. Smetanov
      “Sapfir” JSC, Moscow , Russia

Б31   Hybrid organic – inorganic light emitting diodes for optoelectronics
      O.N. Ermakov
      “Sapfir” JSC , Moscow, Russia

Б32   Comparative analysis and modeling of organic and inorganic diodes for
      integrated optoelectronics
      O.N. Ermakov
      “Sapfir” JSC , Moscow, Russia

Б33   Polymer composites for microelectronics and optoelectronics
      O.N. Ermakov
      “Sapfir” JSC, Moscow , Russia

Б34   Photometric accuracy enchancement of CCD camera for astrophysical
      researches
      E.A. Rahimov
      The National Space Agency, Baku, Azerbaijan

Б35   Switching effect and photoelcetric properties of In2O3-SiO2-Si-SiO2-Mе
      structures
      A.Z. Badalov
      The National Academy of Aviation of Azerbaijan

Б36   The short–range order in thin amorphous films of Yb3(1-x)SmxAs4Se9
      (x=0,2%)
      E.Sh. Hajiyev, A.I. Madadzade, D.I. Ismayilov
      Institute of Physics of the NAS, Baku, Azerbaijan

Б37   Structure and optical properties of Pb1-xMnxSe:Ga epitaxial films
      I.R. Nuriyev, E.Yu. Salayev, M.B. Gadzhiyev, Kh.D. Jalilova, R.M. Sadigov, A.M. Nazarov,
      B.Sh. Barkhalov
      Institute of Physics of the NAS, Baku, Azerbaijan




                                               28
Б38   Acoustophotovoltaic effect in TlIn1-xGdxSe2 (x=0; 0.02) single crystals
      E.M. Godjaev, А.М. Nazarov*, А.А. Мovsumov**, Kh.S. Khalilova, B.Sh. Barkhalov*
      Azerbaijan Technical University, Baku, Azerbaijan
      *Institute of Physics of the NAS, Baku, Azerbaijan
      **National Aviation Academy, Baku, Azerbaijan

Б39   Features of photo-electric parameters of the crystal TlIn0,98Pr0,02Se2 and
      resistors on its basis
      E.M. Godjaev, G.S. Dzhafarova, А.М. Nazarov*, S.A. Aliev
      Azerbaijan Technical University, Baku, Azerbaijan
      *Institute of Physics of the NAS, Baku, Azerbaijan

Б40   The nature of optical                  phenomena’s         in    selective   radiation
      photothermoconvertor
      A.M. Kasymahunova, M.B. Nabiev*, R.Ya. Rasulov*, Sh.A. Olimov
      Politechnical Institute, Fergana, Uzbekistan
      *Fergana State University, Fergana, Uzbekistan

Б41   Calculation of photosensitivity of porous silicon with cylindrical geometry
      of pores
      L.S. Monastyrsky, B.S. Sokolovsky, V.S.Vasylyshyn
      Ivan Franko National University, Lviv, Ukraine

Б42   Wide-format superhighsensitive module transmitters of third generation
      S.A. Plakhov, I.N. Surikov
      OJSC “NRI Electron”, St. Petersburg, Russia

Б43   Application of photomultipliers with mesh dynodes for detection of pulse
      light beams in wide range
      V.N. Lukianov, V.M. Frolov, L.P. Shusterman*, A.I. Stepanov*, L.A. Spivak*
      OJSC “NRI Electron”, St. Petersburg, Russia
      *CJSC “Electrozond”, Saint-Petersburg, Russia

Б44   The InAs structures of 76 mm diameter for infrared devices
      D.M. Grama, A.S. Petrov, S.D. Popov, E.V. Chilaeva
      OJSC “NRI Electron”, St. Petersburg, Russia

Б45   Photocathode with sweeping electrical field for 0.9 – 1.7 μm spectral range
      M.R. Ainbund, I.S. Vasiliev, I.N. Gomin, S.N. Kudryashova, E.E. Levina, A.V. Pashuk
      OJSC “NRI Electron”, St. Petersburg, Russia

Б46   Investigation of the process of chemical-mechanical polishing of zinc
      selenide using the aqueous solutions of inorganic acids and bases
      U.P. Klepikova, Q.V. Timofeev
      Institute of Chemistry of High-Purity Substances, Nizhny Novgorod, Russia

Б47   Computer investigation of the polished surfaces of polycrystalline zinc
      chalcogenides
      E.M. Gavrishchuk, E.Yu. Vilkova, A.N. Kolesnikov, O.V. Timofeev
      Institute of Chemistry of High-Purity Substances, Nizhny Novgorod, Russia



                                             29
Б48   About “Holst`s glass”
      O.D. Potapkin
      Institute of Radioengineering Electronics & Automation,Moscow, Russia

Б49   A inspection device of semiconductor nanostructures layer growth for
      photoelectronics
      O.D. Potapkin
      Institute of Radioengineering Electronics & Automation,Moscow, Russia

Б50   Light-controllable deflector
      Y.N. Perepelitsyn, N.V. Zhavoronkov*, A.A. Kleschev**
      Institute of Radio Engineering and Electronics of RAS, Saratov Department, Saratov, Russia
      *Research Institute of Material Science and Technology, Zelenograd, Russia
      **Saratov State University, Saratov, Russia;

Б51   Phase creation in films of system Ag-Ga-Se
      A.Ch. Mamedova, D.I. Ismailov
      Phisical Institute of NAS, Baku, Azerbaijan

Б52   Investigations of GaP with р-n junction photodiodes at temperatures up to
      500°С
      V.S. Rudnevsky, V.I. Stafeev
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б53   Optical cryostat and thermostat for UV, visible and SWIR photodetectors
      investigations
      V.S. Rudnevsky
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б54   GaP Shottky photodiodes properties at high temperatures
      Rudnevsky V.S., Stafeev V. I.
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б55   Solid solutions of ZnSxSe1-x zinc chalcogenides as promising materials for
      IR-optics
      D.V. Savin, V.B. Ikonnikov
      Institute of Chemistry of High-Purity Substances of RAS, Nizhny Novgorod, Russia

Б56   Modification of HgCdTe electrical properties by laser shock waves
      Nicolas Berchenko*, **, Vitaly Yakovyna*, Yuri Nikiforov***
      * Lviv Polytechnic National University, Lviv, Ukraine
      ** Institute of Physics, Rzeszow University, Rzeszow, Poland
      *** Ternopil State Technical University, Ternopil, Ukraine

Б57   To the question of magnetic superconductor’s theory
      D.V. Kreopalov*, A.M. Savchenko, M.A. Savchenko
      Moscow State University, Moscow, Russia
      *Bauman Moscow State Technical college, Moscow, Russia




                                              30
Б58   The concept of clear rooms for manufacture of photoelectronic products
      components on an example of the production cycle in the block
      D.A. Molodtsov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б59   Video information layout during conferences and meeting carrying using
      ATEN equipment
      A. Karyakin
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б60   Photoelectric properties of germanium photodiodes with zirconium dioxide
      layers applied by magnetron method
      T.N. Grishina, N.N. Kichina, L.A. Kosukhina, M.S. Sidorov, M.A. Trishenkov, A.E.
      Troshkov, P.E. Khakuashev, T.A. Hromova, I.V. Chinareva
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б61   Wideband panoramic direction-finder of laser radiation
      L.I. Gorelik, К.М. Kulikov, J.P. Sharonov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б62   Influence of a background illumination on the dynamic range of the
      photodetector based on the photoresistor (CdxHg1-xTe)
      L.I. Gorelik, K.M. Kulikov, V.E. Lozhnikov В.Е., A.N. Sorokin*, A.A. Utkin*,
      Yu.P. Sharonov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia
      * MIPT, Dolgoprudnyi Russia

Б63   Optimal detection of laser impulses by photoresistors with huge iterance
      S.V. Bushman*, L.I. Gorelik, K.M. Kulikov, J.P. Sharonov, A.N. Sorokin*, A.A. Utkin*,
      State Scientific Center «RD&P Center «Orion», Moscow, Russia
      * MIPT, Dolgoprudnyi Russia

Б64   Solid solutions of monocrystals Cd1-xZnxTe for ionizing radiation detectors
      A.A. Mel’nikov, N.A. Kul’chizkiy
      Institute of Radioengineering Electronics & Automation,Moscow, Russia

Б65   Semiconductor uncoiled detectors based on solid solutions of monocrystals
      Cd1-xZnxTe spectrometric characteristic
      A.A. Mel’nikov, N.A. Kul’chizkiy
      Institute of Radioengineering Electronics & Automation,Moscow, Russia

Б66   Intensity determination of atomic and molecular beams based on electrons
      small-angle scattering in the process of molecular-beam epitaxy
      A.A. Mel’nikov, N.A. Kul’chizkiy
      Institute of Radioengineering Electronics & Automation,Moscow, Russia

Б67   Planar p+-n junctions on Si and InSb peculiarity
      V.P. Astakhov, G.M. Lihatchov
      JSC “MZ “Sapphire”, Moscow, Russia




                                             31
Б68   The ring 96-elements silicon pin-photodiode
      V.P. Astakhov, N.I. Evstafjeva, V.V. Karpov, G.M. Lihatchev, A.M. Polejaev, K.V. Sorokin,
      N.V. Filipenko
      JSC “MZ “Sapphire”, Moscow, Russia

Б69   Technology process automation of anti-reflecting coatings in IR spectrum
      range
      A.N. Kozlov, A.E. Danilovskiy, A.I. Zaicev, L.A. Mozganova, A.V. Scherbakov,
      A.A. Yur’ev
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б70   Increasing       mechanical       and    chemical                 surface      stability
      of optical glass of the borolanthanum group
      S.P. Avdeev, S.N. Petrov, P.V. Serba, E.Y. Gusev
      Technological Institute of the Southern Federal University, Taganrog, Russia

Б71   The data backup and archive enterprise network systems and its role in
      docflow and workflow processes for microphotoelectronic design and
      manufacturing
      L.Ya. Grinchenko, M.V. Bannikov, A.A. Zaytsev, S.S. Khromov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б72   System concept to enterprise engineering equipment and production
      facilities automation management
      L.Ya. Grinchenko
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б73   Photoelectrical characteristics of solid solution’s TlGa1-xInxSe2
      E.M. Kerimova, N.Z. Gasanov, A.Z. Abasova, S.S. Abindekov, P.G. Ismailova
      Physical Institute of NAS, Baku, Azerbaijan

Б74   Analysis night driver’s systems
      Yu. A. Dobrovol’skiy, N.F. Koschavtsev, A.N. Tokarev
      JSC “Katod” Branch “Special Design Office Of Night Vision Devices”, Moscow, Russia

Б75   Night vision sights
      Yu. A. Dobrovol’skiy, N.F. Koschavtsev, A.N. Tokarev, N.M. Shustov
      JSC “Katod” Branch “Special Design Office Of Night Vision Devices”, Moscow, Russia

Б76   Laser cutting of the plates on crystals in optoelectronics
      P.D. Gindin
      JSC “MZ “Sapphire”, Moscow, Russia

Б77   The   features    of          construction        CAD       system       for   infrared
      microphotoelectronics
      S.S. Khromov, L.Y. Grinchenko, A.A. Zaytsev, D.N. Shimko, D.A. Shirokov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia




                                              32
Б78   The basic principles of construction enterprise computer-integrated
      management system for optoelectronic manufactory
      L.Ya. Grinchenko, S.S. Khromov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б79   Business modeling is the way of construction enterprise computer-
      integrated management system for microphotoelectronic manufactory
      L.Ya. Grinchenko, S.S. Khromov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia

Б80   Gas-distribution system function in modern semiconductor production
      V.M. Proskurin, N.V. Smirnov
      State Scientific Center «RD&P Center «Orion», Moscow, Russia




                                           33

				
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