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XX International Scientific and Engineering
Conference on Photoelectronics and Night
Vision Devices
May 27-30, 2008
Moscow, Russia
PROGRAMME
XX International Scientific and Engineering Conference on
Photoelectronics and Night Vision Devices
Is organized by:
“Orion” RD&P Center
Conference is supported by:
Federal Agency of Industry,
Federal Agency of Science and Innovations, Russian
Academy of Science,
Government of Moscow
XX International Scientific and Engineering Conference
On Photoelectronics and Night Vision Devices
May 27-30, 2008 Moscow, Russia
PROGRAMME
State Research Center of Russian Federation
“Orion” RD&P Center
Moscow, 2008
International Program Committee
Chairman: A.M. Filachev, “Orion” RD&P Center, Russia
Vice-chairmen:
V.P. Ponomarenko, “Orion” RD&P Center, Russia
A.I. Dirochka, “Orion” RD&P Center, Russia
Scientific secretary: I.D. Burlakov, “RD&P Center “Orion”, Russia
Committee members:
A.L. Aseev – IPS SD RAS
A.S. Bugaev – MIPT, Russia
Y.V. Gulyaev – IRE RAS
V.P. Ejov – Sapphire, JSC, Russia
A.V. Elyutin – IRM, Russia
V.P. Ivanov – FSSC GIPO, Russia
V.I. Ryzhi – University of AIZU, Japan
O.N. Krochin – PI RAS
Kumar Vikram – Solid-State Phys. Lab., India
N.N. Kudryavtsev – MIPT, Russia
Y.K. Pojela – IPS, Lithuania
Rogalsky Antoni – WAT, Poland
E.Y. Salaev – Institute of Physics, Azerbaijan
A.S. Sigov – MIREA, Russia
F.F. Sizov – ISP, Ukraine
V.A.Soldatenkov – FSUE “Geophizika-NV”, Russia
R.M.Stepanov – NRI “Electron”, Russia
Philippe Tribolet– Sofradir, France
Y.P.Yakovlev – PTI RAS
Y.P. Yakovlev – PTI RAS
Organization committee
Chairman – A.M. Filachev, “Orion” RD&P Center, Russia
Vice chairmen:
M.D. Korneeva, “Orion” RD&P Center, Russia
L.Ya. Grinchenko, “Orion” RD&P Center, Russia
Executive secretary – M.I. Romanishina, “Orion” RD&P Center
Committee members:
K.A. Volkov – “Orion” RD&P Center, Russia
A.I. Dirochka - “Orion” RD&P Center, Russia
V.M. Proskurin – “Orion” RD&P Center, Russia
K.A. Levinskikh - FAI
A.M. Tokarev – “Orion” RD&P Center, Russia
V.V. Shabarov – Government of Moscow
2
General information
Data and scene of Conference carrying out
Conference is carrying out in “Orion” RD&P Center at the address: Kosinskaja, 9,
block 2G, Moscow (near “Vykhino” metro station).
Registration
Participant’s registration, working sets delivery and the stamp of traveling papers are
carrying out on the ground floor.
Conference fee
A registration fee including participation in a scientific and social program, publishing
abstracts and proceedings of the Conference, lunch etc. will be 135 EUR, but for
participants of Russia and CIS it will be 40 EUR (20 EUR for students and post-
graduated students, 30 EUR for speakers). The each report can be presented by one
author only. Participants can pay fees at registration.
3
PROGRAMME
THE LAST NEWS:
ON THE CONFERENCE WILL BE LISTEN THE NEXT ADDITION REPORTS
The Thales last developments in the field of technologies and imaging
information means
Michel Papuchon
Thales, France
The development trends of the aerospace optical electronic means and
photodetectors requirements for them
V.F. Zakharenkov, E.A. Jozep, G.B. Kamenkov, G.A. Makavtsov, L.A. Mirzoeva,
V.S. Pavlov, V.A. Tupikov
S.I.Vavilov GOI, S.-Petersburg , Russia
Tuesday, May 27
10.00 Opening of the Conference
Opening Address of the Organizing Committee Chairman A.M. Filachev
П01 Current state, outlooks and problems of developing IR photoelectronic
10.20 V.P. Ponomarenko, A.M. Filachev, L.Ya. Grinchenko
State Scientific Center «RD&P Center «Orion», Moscow, Russia
П02 Quantum dot infrared photodetectors: status and outlook
10.50 A. Rogalski
Institute of Applied Physics, Military University of Technology, Warsaw, Poland
П03 Magnetic and acoustic photonic metamaterials
11.30 S.A. Nikitov, Yu.V. Gulyaev
Institute of Radioengineering and Electronics, RAS, Moscow, Russia
12.00 – 12.20 Coffee Break
П04 New challenges for high performance IR applications
12.20 Philippe TRIBOLET
SOFRADIR, France
П05 Development status of IR FPA detectors in KIP
12.50 Xiao-Ping Chen
Kunming Institute of Physics, Kunming, China
4
П06 Second generation of focal plane array on the basis of design MCT MBE
13.20 V.S. Varavin, V.V. Vasiliev, S.A. Dvoretsky, T.I. Zakhariyash, A.G. Klimenko,
I.V. Marchshin, N.N. Mikhailov, A.V. Predein, A.O. Suslyakov, Yu.G. Sidorov,
M.V. Yakushev, A.L. Aseev
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
14.00 – 15.30 Lunch. Exhibition
П07 Ultimate parameters of multielement hybrid MOS InAs IR FPA and
15.30 devices based of them
G.L. Kuryshev, 1.1. Lee, V.M. Bazovkin, N.A. Valisheva, A.A. Guzev, V.M. Efimov,
A.P. Kovchavtsev, V. G. Polovinkin, and A. S. Stroganov
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
У01 Research of the InSb FPA photo-electric parameters
16.00 A.I. Patrashin, I.L. Kasatkin, A.A. Lopukhin, V.F. Chishko
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У02 Research of time correctability for InSb FPA
16.20 V.F. Chishko, A.I. Dirochka, I.L. Kasatkin, A.A. Lopukhin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У03 The assembly on basis 320x240 uncooled VOX microbolometer IR FPA
16.40 M.A.Dem'yanenko, B.I.Fomin, D.G. Esaev, V.N. Ovsyuk, L.L. Vasil'ieva, C.A. Volkov,
I.V. Marchishin, Y.S. Chetverov*, A.E. Zdobnikov*, P.N. Kudriavtsev*,
E.B. Volodin**, A.E. Ermolov **, P.P. Usov**, V.P. Chesnokov**, P.R. Mashevich**
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
*
JSC Central Research Institute “Cyclone”, Moscow, Russia
**
JSC “Angstrem”, Moscow, Russia
17.00 – 17.15 Coffee Break
У04 Uncooled matrix IR detector using Golay cell and optoelectronic reading
17.15 system
A.V. Gelfand, A.G. Paulish, V.N. Fedorinin
Novosibirsk branch of Institute of Semiconductor Physics SB RAS “EDI AME”, Novosibirsk,
Russia
У05 288×4 IR FPA with bidirectional image scanning
17.35 V.V. Vasilyev, A.V. Predein, V.S. Varavin, N.N. Mikhailov, S.A. Dvoretsky, V.P.Reva*,
Yu.G. Sidorov, F.F. Sizov*, A.O. Suslyakov, A.L. Aseev
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
* V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
У06 128×4×2 dual-band HgCdTe focal plane array detector and its application
17.55 Jin-Yi Wang Ling Jin Pin-Yi Zhang
Kunming Institute of Physics, Kunming City, China
5
У07 Two-spectral focal plane arrays based on quantum well structures
18.15 A.A. Kazakov, G.M. Zverev, V.B. Kulikov, V.P. Kotov, O.F. Butyagin,
O.B. Cherednichenko, U.V. Kurnyavko, A.A. Marmaluk, А.А. Solodkov*
M.F. Stelmakh Research & Development Institute “Polyus”, Moscow, Russia
*Federal State Organization «22 Central Scientific Research Test Institute of The Defence
Ministry of Russian Federation» Mutishy, Russia
У08 Long-wavelength 320×240 quantum well infrared photodetector
18.35 Yan-Li Shi
Detector Center, Kunming North Infrared Technology Co., LTD, Kunming City, China
У09 PtSi 320х240 CMOS focal plane arrays for 3-5 µm
18.55 A.Y. Nikiforov, V.V. Karpov, A.M. Belin*, V.I. Zolotaryov*, A.D. Popov*
JSC “MZ “Sapphire”, Moscow, Russia
*JSC "Angstrom", Moscow, Russia
Wednesday, May 28
Section А
9.30 – 12.00
П08 Detectors of terahertz radiation utilizing plasma resonances
9.30 Victor Ryzhii, Maxim Ryzhii, Akira Satou, Taiichi Otsuji*, and Michael S. Shur**
Computational Nanoelectronics Laboratory, University of Aizu, Wakamatsu 965-8580,
Japan
*Research Institute of Electrical Communication Tohoku University, Sendai, Japan
**Department of Electrical, Electronics, and System Engineering, Rensselaer Polytechnic
Institute, Troy, USA
П09 Mm and sub-mm (THz) detectors
10.00 F.F. Sizov
V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
П10 Microbolometer FPA for registration of infrared and terahertz radiation
10.30 M.A. Dem’yanenko, D.G. Esaev, V.N. Ovsyuk, B.I. Fomin, A.L. Aseev, B.A. Knyazev*,
G.N. Kulipanov*, and N.A.Vinikurov*
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
*Budker Institute of Nuclear Physics SB RAS, Novosibirsk, Russia
У10 Microbolometer FPA for registration of terahertz radiation
11.00 M.A. Dem’yanenko, D.G. Esaev, I.V.Marchishin, V.N. Ovsyuk, B.I. Fomin, B.A. Knyazev*
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
*Budker Institute of Nuclear Physics SB RAS, Novosibirsk, Russia
У11 Planar detectors for millimeter wave focal plane imaging systems
11.20 V.R. Zakamov, V.I. Shashkin, A.V. Murel
Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia
6
У12 4x288 LWIR TDI vacuum subarray photodetector module (FUK-140)
11.40 V.V. Karpov, N.S. Kuznetsov, B.S. Krasheninnikov, V.I. Petrenko, V.I. Semenov,
V.V. Vasilyev*
JSC “MZ “Sappfir”, Moscow, Russia
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
12.00 – 12.15 Coffee Break
П11 Multichannel signal preprocessors for multielement IR FPA
12.15 I.I. Lee
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
У13 Principles of construction ROIC using photosignal ADC
12.40 P.A. Kuznetsov, E.A. Klimanov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У14 Influence of readouts design-technological limitations on FPA parameters
13.00 V.P. Reva, F.F. Sizov*
Institute of Microstructures, Kiev, Ukraine
* V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
У15 The signal processing modules auto-testing method of optoelectronic
13.20 devices
А.А. Solodkov, S.S. Miloserdov
Federal State Organization «22 Central Scientific Research Test Institute of The Defence
Ministry of Russian Federation», Mytischy, Russia
У16 Development of color imaging with natural color appearance for low-level
13.40 light visible and infrared image
Wang Lingxue, Jin Weiqi, Shi Shiming, Zhao Yuanmeng
Beijing Institute of Technology, Beijing, China
14.00 – 15.20 Lunch. Posters (Section А)
У17 “Analog pipeline processing” using for TDI realization
15.20 V.P. Reva*, Yu.P. Derkach*, S.V. Korinets*, A.G. Golenkov*
Institute of Microstructures, Kiev, Ukraine
* V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
У18 Adaptive algorithm of pirosignal multiframed accumulation in real-time
15.40 V.I. Bozhenko, O.P. Kondratov, P.A. Kondratov, V.F. Tkachenko
National University “Lviv Politechnika”, Lviv, Ukraine
7
У19 Adaptive non-uniformity correction with micro-scaning for FPA
16.00 S.I. Zhegalov, W.N. Solyakov, V.G. Morozova*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
*MIPT, Dolgoprudnyi Russia
У20 Nonlinear non-uniformity correction for FPA
S.I. Zhegalov*, W.N. Solyakov*, V.G. Morozova*, **
*State Scientific Center «RD&P Center «Orion», Moscow, Russia
**MIPT, Dolgoprudnyi Russia
У21 Modeling of adaptive non-uniformity correction for FPA
S.I. Zhegalov*, W.N. Solyakov*, V.G. Morozova*, **
*State Scientific Center «RD&P Center «Orion», Moscow, Russia
**MIPT, Dolgoprudnyi Russia
У22 Enhancing of thermal contrast in IR images
16.30 V.N.Soljakov, V.N. Gorelik, D.Yu. Trenin*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
*MIPT, Dolgoprudnyi Russia
У23 Recognition of objects with low thermal contrast by two-band
thermoimaging system
L.I. Gorelik, A.V. Polesskiy, V.N. Solyakov, D.Y. Trenin*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
*MIPT, Dolgoprudnyi Russia
У24 Algorithms and software for micro objects diffraction pattern analysis
16.55 N.G. Vlasov, G.S. Kalenkov**, S.G. Kalenkov*, A.E. Shanko
“Stankin” Moscow State Technical University, Moscow, Russia
*”MAMI” Moscow State Technical University, Moscow, Russia
**MIPT, Dolgoprudnyi Russia
17.10 – 17.25 Coffee Break
У25 The researches of parameters FPA correction stability
17.25 V.N. Soljiakov, M.V. Kortikov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У29 Progress of researches in scene-based nonuniformity correction for IRFPA
17.40 Jin Weiqi Sui jing Dong Liquan Cao Fengmei Cao Yang Liu Chongliang Liu Xiu
Beijing Institute of Technolog, Beijing, China
У30 Digital signal processing algorithms in star trackers
18.05 A.N. Isakov, V.I. Fedoseev, V.M. Abakumov
JSK "Geofizika-Cosmos", Moscow, Russia
8
У26 Photosensitive properties of In/ZnTe/CdTe/HgCdTe structures
18.20 A.A. Guzev, V.S. Varavin, S.A. Dvoretsky, A.P. Kovchavtsev, G.L. Kuryshev, I.I. Lee,
Z.V. Panova, Yu.G. Sidorov, M.V. Yakushev
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
У80 Refined model of generation-recombination current in IR photodiodes
18.35 A.V. Yartsev
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
У28 Localized states and submillimeter spectral range photosensitivity of
18.50 PbSnTe:In films
A.E. Klimov, V.N. Shumsky
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
У27 Peculiarities of semiconductor materials as optical media for infrared
19.05 spectrum
N.I. Astafiev, I.M. Nesmelova
Federal State Unitary Enterprise “Scientific and Production Association “State Institute of
Applied Optics”, Kazan, Russia
Section Б
9.30 – 12.05
У31 Photomultiplier with GaAs-photocathode and encoding anode for fast
9.30 photon counting image detector
V.V. Bakin*, S.N. Kosolobov*, A.S. Terekhov*,**, H.E. Scheibler*, V.G. de-Bur***,
V.L. Plokhotnichenko***, G.M. Beskin***, S.V Karpov***
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
**Novosibirsk State University, Novosibirsk, Russia
***Special Astrophysical Observatory RAS, Nizhnij Arkhyz, Russia
У32 Photoelectrons energy distributions for multialkali photocathodes with
9.50 positive and negative electron affinities
S.V. Zabuslayev, I.A. Nesterov, V.I. Loktionov, V.V. Bakin, H.E. Scheibler*,
A.S. Terekhov*
JSC “Katod”, Novosibirsk, Russia.
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
У38 Model of current amplification for the conductive connected channels of
10.10 MCP
A.B. Berkin, V.V. Vasilyev
Novosibirsk State Technical University, Novosibirsk, Russia
9
У33 A new method determining noise pulse height distribution (PHD) and S/N
10.30 of image intensifiers
Xiang Shiming, Shi Feng, Guo Hui
Xian Institute of Applied Optics, Xian, China
У34 Algorithm of infrared dual-band pseudo-color Image fusion based on
10.50 feature-level
Ni Guoqiang, Qin Qingwang, Xiao Manjun
Beijing Institute of Technology, Beijing, China
У35 Advanced, manpower and time saving testing concept for development,
11.10 production and maintenance of electro-optical systems
Dario Cabib, R.A. Buckwald, Shimon Nirkin, Moshe Lavi, Oded Neria,
Claudia Ben Yaakov, Efraim Tzafiir, Moshe Blau, Jacob Dolev
CI Systems Ltd., Israel
У36 Night driver’s sight system
11.25 I.A. Veselovskiy, Ya.A. Dobrovol’skiy, N.F. Koschavtsev, V.I. Leleikin, N.M. Shustov, V.I.
Loktionov*
JSC “Katod” Branch “Special Design Office Of Night Vision Devices”, Moscow, Russia
*”Katod” JSC, Novosibirsk, Russia
У37 High-precision laser technologies for producing space equipment
11.45 P.A. Vyatlev, G.M. Polishchuk, K.M. Pichkhadze, V.K. Sysoev
Lavochkin Association, Khimki, Russia
12.00 – 12.15 Coffee Break
У39 Development of optical-electronic devices for observation and aiming
12.15 purposes from single-spectrum towards single-channel multi-spectral
systems on exemplary developments by the design department at Open
Joint-Stock Society «ROMZ»
A.V. Medvedev, V.D. Ivanitsky, S.N. Knyazeva
Open Joint-stock Society «Rostov optical- mechanical plant» Rostov, reg. Yaroslavl, Russia
У40 Multispectral thermal imager with filtering mean based on inclined Fabry-
12.35 Perot interferometer
A.N. Sviridov, A.M. Filachev, V.P. Ponomarenko, I.D. Burlakov, A.I. Dirochka
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У41 Sensing apparatus by the ground on the basis of uncooled microbolometric
12.55 FPA for space vehicles
M.G. Pirogov, J.A. Videtskih, V.I. Fedoseev, V.I. Varlamov, S.J. Zenzinov, M.P. Kolosov,
N.M. Strizhova, A.J. Gebgart, V.V. Denisov, M.A. Terehov
Joint Stock Company «Geofizika - Cosmos», Moscow, Russia
У42 Gated viewing night vision device for spectral region 0.9 – 1.7 µm
13.10 V.M. Belokonev, V.G. Volkov, G.A. Leonova, V.L. Salicov
Federal State Unitary Enterprise “ALPHA”, Moscow, Russia
10
У43 Modification Su-27 IRST basing on 768×8 dual-band linear detector
13.25 Fan hongbo Kang Rixin
Kunming Institute of Physics, Kunming City, China
У81 The multipurpose thermovision device on the basis of a panoramic optical
13.50 tract
L.I. Gorelik, K.M. Kulikov, A.V. Polesskij, A.S. Selivanov, A.I. Shketov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
14.05 – 15.30 Lunch. Posters (Section A)
У47 New 3-5 µm wavelength range hyperspectral imager for ground and
15.30 airborne use based on a single element interferometer
Dario Cabib, Amir Gil, Moshe Lavi, Robert A. Buckwald, Stephen G. Lipson*
CI Systems Ltd., Israel
*Physics Department, Technion-Israel Institute of Technology, Haifa, Israel
У44 The research of technological opportunities of multispectral IR-devices
15.50 creation
V.V. Potelov, B.N. Senik
JSC «Krasnogorsky Zavod», Krasnogorsk, Moscow Reg., Russia
У45 Low-frequency noise in thermal Imager on the basis of 256x256 LWIR
16.10 Staring FPA
K.O. Boltar, I.D. Burlakov, A.M. Filachev, V.V. Poluneev, V.P. Ponomarenko,
N.I. Iakovleva
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У46 The IR camera for a spectral range on 3-5 microns on photoreception matrix
16.30 made on the base of InSb
V.N. Soljakov, L.I. Gorelik, M.V. Kortikov, A.V. Polesskij, A.V. Poltoratskij
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У48 The intellectual system for safe vehicles drive control
16.50 A.M. Filachev, V.P. Ponomarenko, L.I. Gorelik, A.A. Boguslavskij*, С.М. Sokolov*,
A.K. Platonov*, K.I. Kij*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
*Institute of the Practical Mathimatics by the name of. M.V.Keldysh of the Russian Academy of
Science, Moscow, Russia
У49 Systems of the thermal control of new generation for RRW
17.10 D.A. Gindin, V.P. Ezhov, A.A. Gribanov, Yu.N. Dolganin, V.V. Кarpov, M.E. Kozyrev,
O.L. Kolganov, V.P. Korolkov, N.S. Kuznetsov, M.A. Savchenko
JSC "МZ" Sapphir ", Moscow, Russia
17.20 – 17.35 Coffee Break
11
У71 Amplitude and statistical characteristics of single quantum photodetectors
17.35 Zenevich A.O.
Higher state college of Communication, Minsk, Belarus
У51 Optimal cold shield for IR FPA
17.55 A.I. Patrashin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У52 Investigations of IR images tunable filter based on inclined interferometer
18.15 A.N. Sviridov, K.M. Kulikov, A.S. Kononov, L.D. Saginov, A.S. Selivanov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У53 Microscope spectrum analyzer for microobject’s spectral properties
18.35 exploration.
N.A. Kolotovoiy
“ Labmetod”, Moscow, Russia
18.45 – 20.00 Posters (Section А)
Thursday, May 29 (Section А)
9.30 – 12.00
П14 Nonconventional methods of thermal management for elements of photo-
9.30 and microelectronics
L.P. Bulat
St. Petersburg State University of Refrigeration, St. Petersburg, Russia
У54 Thermoelectric sensors based on materials with anisotropic thermoEMF
9.55 L.I. Anatychuk, A.V. Pribyla
Institute of Thermoelectricity, Chernovtsy, Ukraine
У57 Status and future trends development of Split-Stirling microcryogenic
10.15 systems for cooling FPA
M.V. Lipin, A.V. Gromov
Scientific and Technical Complex “Cryogenic Technique” Ltd., Omsk, Russia
У55 Microminiature linear Split Stirling cryogenic cooler for portable infrared
10.35 imagers
A Veprik, H Vilenchik, S Riabzev, N Pundak
Ricor, Cryogenic and Vacuum Systems, Israel
12
У56 Design of a construction and technique of fabrication of the unified
10.55 number of all-metal cryostats for IR-photodetectors MW&LW spectral
range
D.A. Gindin, V.P. Yezhov, V.V. Karpov, V.S. Krasheninnikov, N.S. Kuznetcov,
V.I. Petrenko
JSC “MZ “Sapphir”, Moscow, Russia
У58 Cryogenic radiative cooler optimization
11.10 A.I. Abrosymov, A.A. Verlan, G.M. Polishchuk, K.M. Pichkhadze, V.K. Sysoev
Lavochkin Association, Khimki, Russia
У59 Thermoelectric cooling for detector applications
11.25 G.G. Gromov, L.B. Ershova
RMT Ltd, Moscow, Russia
У60 Throttle cooling systems based on the tank with cryogenic refueling
11.40 A.I. Dovgyallo, A.P. Logashkin, D.V. Sarmin, D.A. Uglanov
Samara State Aerospace University, Samara, Russia
11.55 – 12.10 Coffee Break
У61 Metal - Cadmium Mercury Telluride contacts
12.10 V.I. Stafeev
State Scientific Center «RD&P Center «Orion», Moscow, Russia
У62 Growth of CdHgTe epitaxial structures by combination the methods of
12.30 LPE and MOCVD for IR-detectors with narrow spectral characteristic
A.P. Kotkov, N.D. Grishnova, A.N. Moiseev, I.A. Denisov*, N.A. Smirnova*,
N.I. Shmatov*
Institute of Chemistry of High-Purity Substances of RAS, N. Novgorod, Russia
*FSUE "GIREDMET", Moscow, Russia
У63 The development of technology elements of monolithic HgCdTe
12.45 photodetector
M.V. Yakushev, S.A. Dvoretski, A.I. Kozlov, Y.G. Sidorov, V.S. Varavin, V.V. Vasilyev,
B.I. Fomin, A.L. Aseev
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
У64 MBE growth of nanoheteroepitaxial HgCdTe structures
13.00 V.S. Varavin, S.A. Dvoretsky, N.N. Mikhailov, V.G. Remesnik, Yu.G. Sidorov
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
У65 MBE heteroepitaxial MCT structures with internal short-wavelength cut-
13.25 off filter
Dvoretsky S.A., Mikhailov N.N., Remesnik V.G., Predein A., Suslyakov A.O., Vasiliev V.V.
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
13
У66 Ion etching study of the defect structure of CdxHg1-xTe films grown by
13.40 molecular beam epitaxy
I.I. Izhnin, E.S. Ilyina, K.R. Kurbanov, S.A. Dvoretsky*, N.N. Mikhailov*, Yu.G. Sidorov,
V.S. Varavin*, K.D. Mynbaev**, M. Pociask***
R&D Institute for Materials SRC "Carat", Lviv, Ukraine
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
**
Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia
Ioffe Physical-Technical Institute of RAS, St. Petersburg, Russia
***Institute of Physics, Rzeszów University, Rzeszów, Poland
У67 Heteroepitaxial PbSnTe:In/BaF2/CaF2/Si structures for photodetector
13.55 arrays sensitive up to 16 μm
A.N. Akimov, A.E. Klimov, S.P. Suprun, and V.N. Shumsky
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
14.10 – 14.45 Lunch Posters (Section Б)
15.30 Excursion
Friday, May 30
9.30 –11.35
П12 The necessity and prospects of developments of large focal surfaces with
9.30 solid state photodetectors for systems of RSO detection out of atmosphere
V.G. Ivanov*, A.A. Kamenev*, R.M. Stepanov
OJSC “NRI Electron”, St. Petersburg, Russia
*NIC of 4NRI Ministry of Defense, St. Petersburg, Russia
П13 High power mid-infrared LED,s (1.6-4.6 m) based on the III-V
9.55 heterostuctures for metrological application
Yury P.Yakovlev
Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia
У68 The ultraviolet photodetectors based on wide-band gap semiconductor
10.20 materials
T.V. Blank, Yu.A. Goldberg
Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia
У69 Photovoltaic detector based on asymmetric p-InAs/AlSb/InAsSb/AlSb/
10.40 p-GaSb heterostructure with a single quantum well for 1.5-3.6 µm spectral
range
M.P. Mikhailova, I.A. Andreev, K.D. Moiseev, Yu.P. Yakovlev, E. Hulicius*,
A. Hospodkova*, J. Pangrac*, K. Melichar*, T. Simecek*
Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia
Institute of Physics, AS CR, Prague, Czech Republic
У70 The multicascade avalanche photodiode
11.00 A.I. Patrashin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
14
У50 Thermomechanical nano-membrane IR image sensors
11.15 V. Bespalov, V. Fedirko, E. Fetisov
Moscow Institute of Electronic Technology, Zelenograd, Moscow, Russia
11.30 – 11.45 Coffee Break
У72 Broad band InAsSb backside illuminated photodiodes with a cut-off
11.45 wavelength of 4.5 μm
B.A. Matveev, A.L. Zakgeim, N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev,
M.A. Remennyi, N.M. Stus’, A.E. Cherniakov
Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia
У73 Characteric’s research of Shottky barrier Ni-ZnSe structures and energy
12.00 selective ultra violet photodiode’s technology
V.L. Perevertailo, Yu.G. Dobrovol’skiy, B.G. Shabashkevich
NSA Ukraine, “Tenzor”, Chernovtsy
У74 Chemical passivation of GaSb/GaInAsSb/GaAlAsSb photodiodes
12.15 E. Kunitsyna, I. Andreev, T. L’vova, Y. Yakovlev
Ioffe Physico-Technical Institute RAS, St. Petersburg, Russia
У75 Multielement IR detectors with Shottky barrier sensitive to radiation with
12.30 quantum energy less than height of potential barrier
V.G. Ivanov, G.V. Ivanov, A.A. Kamenev, V.A. Arutjunov*, R.M. Stepanov*,
V.I. Panasenkov*
Research Centre – branch 4 of Ministry of Defense NRI, St. Petersburg, Russia
*OJSC “NRI Electron”, St. Petersburg, Russia
У76 Infrared radiation detectors for optical engineering
12.45 G.V. Chekanova, E.R. Globus, A.A. Komov and M.S. Nikitin
Federal State Unitary Enterprise “ALPHA”, Moscow, Russia
У77 Long term stability photoresistors of the spectral range 8-12 m on base of
13.00 MCT heterostructures, grown by MBE on the GaAs substrate
N.M. Akimova A.V. Gusarov, V.V. Кarpov, V.V. Krapukhin, E.V. Susov, A.V. Filatov
V.S. Varavin*, Ju.G. Sidorov*
JSC"МZ" Sapphir ", Moscow, Russia
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
У78 SPRITE detectors based on HgCdTe heteroepitaxial structures grown by
13.15 MBE
A.A. Komov, A.A. Drugova, G.V. Chekanova, M.S. Nikitin and I.Yu. Lartsev
Federal State Unitary Enterprise “ALPHA”, Moscow, Russia
У79 Compensation, charge trapping and efficiency of CdTe detectors
13.30 V.N. Babentsov, F.F. Sizov
V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
13.45 Closing of the Conference
15
Posters
Section А
Wednesday, May 28
А01 A new method of numerical analysis of stationary fluctuation phenomena
in the semiconductor structures and devices
A.Yu. Selyakov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А02 Background irradiance calculation method for IR array
with arbitrary shape cold diaphragm
A.I. Patrashin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А03 Background irradiance of an IR FPA with cold screens of the preset types
A.I. Patrashin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
16
А04 Two-spectral photodetector module
V.D. Bochkov, J.S. Bichkovsky, B.N. Drazhnikov, P.A. Kuznetsov, I.V. Efimov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А05 Photodetector linear arrays for thermal direction-finding equipment
V.D. Bochkov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А06 Antireflection coating thermocycling stability of IR-photodetectors
sensitive element
K.O. Boltar, V.I. Stafeev, M.V. Sednev
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А07 Аstronomical observations 125-cm telescope Sternberg Astronomical
Institute with InSb FPA 256x256 camera
N.V. Kravchenko, V.F. Chishko, I.L. Kasatkin, I.A. Maslov*, A.E. Nadjip*,
O.G. Taranova*, A.M. Tatarnikov*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
*Sternberg Astronomical Institute, Moscow State University
А08 256x256 InSb focal plane array for astronomical applications
N.V. Kravchenko, V.F. Chishko, I.L. Kasatkin, A.A. Lopukhin, A.A. Ryabova,
A.E. Nadjip*, A.M.Tatarnikov*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
* Sternberg Astronomical Institute, Moscow State University
А09 FPA cold shield inside forming
L.V. Kiseleva, A.V. Savostin, I.L. Kasatkin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А10 FPA indium microcontacts formation of by ion etching
M.V. Sednev, K.O. Boltar, J.S. Mezin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А11 Resticking technology for manufacture FPA on basis InSb
L.M. Khitrova, L.V. Kiseleva, Chishko V.F., Kasatkin I.L.
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А12 Energy band diagrams of heterostructure p-CdxHg1-xTe/CdTe
S.V. Golovin, A.S. Kashuba
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А13 The indium plastic properties at focal plane arrays hibridisation
V.M. Efimov, D.G.Esaev
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А14 In situ doping of HgCdTe/Si grown by MBE
S.A. Dvoretsky, M.V. Yakushev, A.V. Sorochkin, V.S. Varavin, Y.G. Sidorov
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
17
А15 The fabrication CdHgTe 128x128 focal plane arrays
Z.F. Tsybrii, M.V. Vuichyk, Ye.O. Bilevych, M.V. Apatskaya, M.I. Smolii, E.V. Anrdreeva,
I.O. Lysuk
V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
А16 The selective growth of HgCdTe/Si(310) epilayers by MBE
M.V. Yakushev, S.A. Dvoretsky, Y.G. Sidorov, B.I. Fomin
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А17 Using of the mineral acids mixtures for the chemical treatment of the CdTe
and Сd0.22Hg0.78Te single crystals
Z.F. Tomashik, G.М. Okrepka, V.N. Tomashik, E.M. Lukiyanchuk, V.I. Мorozovskaya
V.Ye.Lashkaryov Institute for Semiconductor Physics of NAS of Ukraine,
А18 Deep group-III impurity centers in PbTe doped by various techniques
T.L. Petrenko, S.V. Plyatsko, F.F. Sizov
V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
А19 One approach to decoding of multizonal images
R.M. Aleev, V.B. Fofanov
«Ural Optical & Mechanical Plant – Institute for Applied Optics» (FSUE branch «Industrial
Association Ural Optical & Mechanical Plant»), Kazan, Russia
А20 Basic principles of infrared imaging devices (IID) with open module
architecture
R.M. Aleev, D.R. Aleev
«Ural Optical & Mechanical Plant – Institute for Applied Optics» (FSUE branch «Industrial
Association Ural Optical & Mechanical Plant»), Kazan, Russia
*M.M. Gromov Test Flight Institute, Zhukovskii, Moscow Region, Russia
А21 Open and interdependent architecture of infrared imagers
R.M. Aleev
«Ural Optical & Mechanical Plant – Institute for Applied Optics» (FSUE branch «Industrial
Association Ural Optical & Mechanical Plant»), Kazan, Russia
А22 Modeling of IR CdHgTe photodiode with step-like profile of band gap
gradient
B.S. Sokolovsky, V.K. Pysarevsky
Ivan Franko National University, Lviv, Ukraine
А23 The infrared images simulator
V.G. Matyuchenko, U.N. Dmitrievskiy
State Research Institute of Aviation Systems (GosNIIAS), Moscow, Russia
А24 Layers HgCdTe preforming singularity by liquid phase epitaxy
E.K. Guseinov, A.A. Radzhabli, T.I. Ibragimov
Physical Institute of NAS, Baku, Azerbaijan
А25 Calculation technique of IR array parameters
A.I. Patrashin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
18
А26 The detector of submillimetric radiation on the base of CdxHg1-xTe (х 0.2)
F.F. Sizov, V.V. Zabudsky, A.B. Smirnov, J.V. Gumenjuk-Sichevska, N.I. Momot
V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
А27 HgCdTe MBE heteroepitaxial photodiode current mechanisms
J.V. Gumenjuk-Sychevskaja, V.V. Vasiliev*, S.A. Dvoretsky*, V.V. Zabudskii, I.A. Lysjuk,
N.N. Mikhailov*
V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А28 The use of indium bumps reflowing for the technology assembly IR FPA
A.R. Novoselov, N.B. Kuzmin, V.V. Vasilyev, N.A.Valisheva
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А29 Optimization of indium bumps welding temperature for FPA
A.R. Novoselov, A.V. Predein, I.G. Kosulina, V.V. Vasilyev
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А30 Investigation of the MIS structures of MBE HgCdTe – anodic oxide
V.V.Vasilyev, Yu.P.Mashukov
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А31 CMOS multiplexor with delta-sigma ADC cell elements
D.V. Borodin, Y.V. Osipov., B.A. Samotaev
FSUE “S&EP “Pulsar”, Moscow, Russia
“RTC Impex” Ltd, Moscow, Russia
А32 Submatrix array1х128 (1х256) on the basis of PbSe row and CMOS
multiplexor
D.V. Borodin, Y.V. Osipov, G.H. Avetisjan, E.R. Globus, V.M. Belokonev,
G.V. Chekanova, B.A. Samotaev
FSUE “S&PE “Pulsar”, Moscow, Russia
Federal State Unitary Enterprise “ALPHA”, Moscow, Russia
“RTC Impex” Ltd, Moscow, Russia
А33 Microcryogenic system for cooling FPA and theirs modules
A.V. Samvelov, K.V. Slovesnov, D.A. Shirokov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А34 Diamond-like anti-reflection coating for IR photodetector
CdхHg1-хTe/Cd1-хZnхTe
F.F. Sizov, N.I. Klui, A.N. Lukyanov, R.K. Savkina, A.B. Smirnov, A.Z. Evmenova
V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
А35 The information systems television channel for modern mobile platforms
P.A. Aldohin, P.V. Zhuravlev, V.A. Voitov*, E.V. Degtyarev*, A.V. Turbin, S.M. Churilov,
V.B. Shlishevskiy
NB of Institute of Semiconductor Physics SB RAS, Novosibirsk Russia
*Federal State Organization «22 Central Scientific Research Test Institute of The Defence
Ministry of Russian Federation» Mutishy, Russia
19
А36 Thermal imagers for land-based mobile platforms
P.V. Zhuravlev, V.A. Voitov*, E.V. Degtyarev*, V.A. Moiseev, L.K. Popov, E.A. Tereshin,
V.N.Fedorinin, K.P. Shatunov
NB of Institute of Semiconductor Physics SB RAS, Novosibirsk Russia
*Federal State Organization «22 Central Scientific Research Test Institute of The Defence
Ministry of Russian Federation» Mutishy, Russia
А37 The bake-stability of electrical parameters of heterostructures HgCdTe
MBE and photodetectors on their basis
D.V. Brunev, V.S. Varavin, V.G. Remesnik, G.Yu. Sidorov, A.O. Suslyakov
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А38 Uncooled Photoconducting Device on the Basis of Cd0.167Hg0,833Te in the
transverse magnetic field
A.A. Aliyev, T.I. Ibragimov, Sh.M. Kuliyev, A.K. Mamedov, E.K. Huseynov
Institute of Physics of the NAS, Baku, Azerbaijan
А39 Gas cooled Dewar for second generation of infrared focal plane arrays
P.P. Dobrovolsky, A.S. Rafailovich, A.P. Antsiferov, D.V. Brunev, S.A. Dvoretsky,
V.S. Varavin, Yu. G. Sidorov
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А40 Linear CCDs and photodetector modules based on them
V.A. Arutjunov, N.G. Bogatyrenko, I.S. Vasilyev, E.U. Ilysavskaya, A.E. Prokofiev
OJSC “NRI Electron”, Saint-Petersburg, Russia
А41 Uncooled pyroelectric IR-array based on barium strontium titanate with
higher sensitivity in 2…24 μm range
S.A. Moroz
OJSC “ NRI Electron”, St. Petersburg, Russia
А42 Linear uncooled microbolometer array based on SOI
A.M. Belin, Y.A. Klimov, C.V. Kuzmin, V.M. Malyshev
LLC "Unique IC’s", Zelenograd city, Russia
А43 Simulation model of staring and scanning optical-electronic devices
Zhidkov P.M., Krasotkin V.S., Prokofyeva V.V., Boroshnev A.V., Kuzmina I.V.*
Central Recearch&Development Institute «Kometa», Moscow, Russia
*MIREA, Moscow, Russia
А44 Measurement stand for ROIC of FPA parameter’s
S.E. Dukhnin, V.V. Zabudskiy*, A.S. Stanislavskiy, A.G. Golenkov*, S.V. Korinez,
V.P. Reva
SE “Research&Development Institute of Microdevices”, Kiev, Ukraine
*V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
А45 The influence of a growth surface morphology CdхHg1-хTe epitaxial layers
on passivating coating quality and FPA parameters
I.D. Burlakov, A.S. Kashuba, E.V. Permikina
State Scientific Center «RD&P Center «Orion», Moscow, Russia
20
А46 The research of the technological regime influence on the passivation
coating performances
I.D. Burlakov, A.S. Kashuba, E.V. Permikina
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А47 The unique properties of the micro and nanocontacts of the metal -
semiconductor
R.K. Mamedov
Baku State University, Baku, Azerbaijan
А48 MCT FPAs crosstalk investigations
K.O. Boltar, N.I. Iakovleva
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А49 Effect of thermal annealing on the optical and photo-electrical properties
of Cd–Hg–Te heterostructures for photo– and optoelectronic mid-infrared
devices
A.I. Izhnin, I.I. Izhnin, V.I. Ivanov-Omskii*, N.L. Bazhenov*, K.D. Mynbaev*,
V.A. Smirnov*, V.S. Varavin**, N.N. Mikhalov**, G.Yu. Sidorov**
R&D Institute for Materials SRC "Carat", Lviv, Ukraine
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
**Ioffe Physical-Technical Institute of RAS, St.-Petersburg, Russia
А50 Defective pixels detection at IRFPA two-point correction
K. Boltar, R. Grachev, V. Poluneyev
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А51 Investigation of the properties of CdHgTe epitaxial layers in hybrid
heterocompositions grown by the methods of LPE and MOCVD
A.P. Kotkov, N.D. Grishnova, A.N. Moiseev, I.A. Denisov*, N.A. Smirnova*,
N.I. Shmatov*, A.G. Belov*, N.A. Pashkova*
Institute of Chemistry of High-Purity Substances of RAS, N. Novgorod, Russia
*FSUE "GIREDMET", Moscow, Russia
А52 Microcryogenic coolers for IR photodetectors
A.N. Senkovsky, V.S. Gabaidullin, V.V. Probylov and O.V. Lebedeva
Federal State Unitary Enterprise “ALPHA”, Moscow, Russia
А53 Prospects of fianite use as the material of micro- and photoelectronics for
photodetectors production
A.N. Buzynin, N.B. Kravchenko*, E.E. Lomonova, M.S. Sidorov, M.A. Trishenkov*,
A.M. Filachev*, P.E. Khakuashev*
IOF RAS, Moscow, Russia
*State Scientific Center «RD&P Center «Orion», Moscow, Russia
А54 Failure analysis of specialized ROIC and processing responses of IR FPA
V.M. Akimov, N.N. Dremova, S.N. Jakunin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
21
А55 Structured singularity’s of heterocompositions growned by MBE
N.N. Dremova, S.N. Jakunin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А56 The photoelectronic ultra wide FOV module for a spectral range 0,8…11,0
microns
L.I. Gorelik, K.M. Kulikov, J.P. Sharonov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А57 Photodetectos from HgCdTe heterojunction structures of a range 3÷5 m
various topology with thermoelectric cooling
N.M. Akimova, Yu.N. Dolganin, V.V. Кarpov, V.P. Korolkov, M.A. Savchenko,
V.S. Varavin*, S.A. Dvoretsky*, N.N. Mikhailov*, Yu.G. Sidorov*, M.V. Yakushev*
JSC"МZ" Sapphir ", Moscow, Russia
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А58 Multispectral multiple Hg1-xCdxTe PD with topology 3×4×288
for a spectral range 8÷12 m
Yu.N. Dolganin, V.V. Кarpov, A.Yu. Nikiforov, V.V. Vasiliev*, T.I. Zachariash*,
A.U. Klimenko*, A.O. Susliakov*
JSC ”MZ”Sapphir”, Moscow, Russia
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А59 Vacuum cryostat with a filter for a format 2×4×576
Yu.N. Dolganin, V.V. Кarpov, M.E. Kozyrev, V.S. Krasheninnikov, N.S. Kuznetsov
JSC ”MZ”Sapphir”, Moscow, Russia
А60 Development of recalculation method of the passport features IR FPA to
the type suitable for use in designing IR laser location equipment
R.O. Stepanov
JSC ”MZ”Sapphir”, Moscow, Russia
А61 The development of the analysis methods of the reflective features IR FPA
and imaging systems which built on its base, for forecasting of the
possibility of the finding such systems by laser location methods
R.O. Stepanov
JSC ”MZ”Sapphir”, Moscow, Russia
А62 Full-scale production development of cooled array photodetector device
module (МФПУ 2 ОМ)
V.V. Karpov, V.I. Petrenko, A.P. Lytkin, V.P. Shyryaev, N.S. Kuznetsov, V.I. Semenov,
P.R. Mashevich*, V.P. Zolotarev*
JSC JSC ”MZ”Sapphir”, Moscow, Russia
*JSC “Angstrem”, Moscow, Russia
А63 Full-scale production development of digital signal processing module
(ЦОС-1)
V.V. Karpov, V.I. Petrenko, A.P. Lytkin, V.P. Shyryaev, Chish K.V.
JSC ”MZ”Sapphir”, Moscow, Russia
22
А64 The optical probe for measuring of photoelectric coupling coefficient of
MWIR and LWIR focal plane arrays
R.O. Stepanov, V.I. Semenov, V.A. Tegay
JSC ”MZ”Sapphir”, Moscow, Russia
А65 Problems of optimization of power supply regimes of thermoelectric
photoreceiver coolers in the optoelectronic equipment structure
C.A. Arakelov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А66 Description possibility avalanche p-i-n photodiodes Geiger mode using
elementary functions
V.А. Kholodnov
Institute of Radio Engineering and Electronics of RAS, Moscow, Russia
А67 Mercury-cadmium-tellurium and manganese-mercury-tellurium epitaxial
surfaces layers study with atomic-force microscopy
I.M. Nesmelova, G.G. Gumarov*, V.N. Ryzhkov, V.Yu. Petukhov*, V.А. Andreev,
А.P. Chuklanov*
Federal State Unitary Enterprise “Scientific and Production Association “State Institute of
Applied Optics”, Kazan, Russia
*Kazan Physical-Technical Institute of RAS, Kazan, Russia
А68 Development of basic technologies of fianite applying as a passivative and
protective photodetectors covering
A.N. Buzynin, T.N. Grishina*, L.A. Kosukhina*, E.E. Lomonova, M.S. Sidorov*,
M.A. Trishenkov*, A.E. Troshkov*, I.V. Chinareva*
IOF RAS, Moscow, Russia
*State Scientific Center «RD&P Center «Orion», Moscow, Russia
А69 IR range receiving devices based on antenna array’s
A.N. Sviridov, V.P. Babenko*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
*Moscow Institute of Radio-engineering, Electronics and Automation, Moscow, Russia
А70 Reliability characteristic estimating method based on electric parameter’s
dependence on operating time
I.D. Burlakov, K.O. Boltar, A.I. Patrashin, E.V. Degtyarev*, А.А. Solodkov*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
*Federal State Organization «22 Central Scientific Research Test Institute of The Defence
Ministry of Russian Federation», Mutishy, Russia
А71 Accelerated test methods of IR FPA fail-safety test
I.D. Burlakov, K.O. Boltar, A.I. Patrashin, E.V. Degtyarev*, А.А. Solodkov*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
*Federal State Organization «22 Central Scientific Research Test Institute of The Defence
Ministry of Russian Federation», Mutishy, Russia
23
А72 Relaxation of current in low background extrinsic silicon photoconductor
detectors at liquid helium temperatures
N.B. Zaletaev
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А73 The block of electronic processing of signals from the matrix
photoreception device
V.N. Sojiakov, M.V. Kortikov, O.V. Kataev*, I.V. Petruchuk*, G.L. Trunov*,
P.A. Solomatin*, A.V. Bovkun*, M.V. Petruchuk*
State Scientific Center «RD&P Center «Orion», Moscow, Russia
*MCS Research Institute, Taganrg, Russia
А74 Development of application specific design library for FPA readout
integrated circuit
S.S. Khromov, A.A. Zaitsev
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А75 Engineering analysis of photo-receiving device’s construction with
integrated micro cooler system
D.N. Shimko
State Scientific Center «RD&P Center «Orion», Moscow, Russia
А76 Luminescent characterization of CdxHg1-xTe films grown by molecular
beam epitaxy
V.I. Ivanov-Omskii, N.L. Bazhenov, K.D. Mynbaev, V.А. Smirnov, V.S. Varavin*,
N.N. Mikhailov*, G.Yu. Sidorov*
A.F. Ioffe Physico-Technical institute, Russian Academy of Sciences, St. Petersburg, Russia
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А77 Research of electrophysical properties of MIS-structures on the basis of
HES HgCdTe MBE
A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.V. Vasilev*, V.S.Varavin*,
S.A. Dvoretsky*, N.N. Mikhailov*, Yu.G. Sidorov*, Yu.P. Mashukov*, M.V.Yakushev*
ASD ”SPTI TSU”, Tomsk, Russia
*
Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А78 Photoelectric characteristics of MIS-structures on the basis of HES
HgCdTe MBE
A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.V. Vasilev*, V.S.Varavin*,
S.A. Dvoretsky*, N.N. Mikhailov*, Yu.G. Sidorov*, Yu.P. Mashukov*, M.V. Yakushev*
ASD ”SPTI TSU”, Tomsk, Russia
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А79 The features of donor centers distribution in p-type MBE MCT graded
band-gap epilayers at ion beam etching and boron ion implantation
A.V. Voitsekhovskii, D.V. Grigorjev, A.P. Kohanenko, A.G. Korotaev, V.S. Volkov,
V.G. Sredin*, N.H. Talipov*, I.I. Izhnin**
ASD ”SPTI TSU”, Tomsk, Russia
*Military Academy RFSP of the Great Peter, Moscow, Russia
**SIE "KARAT", Lviv, Ukraine
24
А80 Efficiency of solar energy conversion by Si solar cell with Ge quantum dots
A.V. Voitsekhovsky, D.V. Grigorjev, O.P. Pcheljakov*, A.I. Nikiforov*
ASD ”SPTI TSU”, Tomsk, Russia
*Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
А81 CdTe as a passivant in heterostructure СdTe/HgCdTe
I.S. Virt, I.V. Kurilo*, I.O. Rudyi*, I.Ye Lopatynskyi*, N.N. Berchenko**, ****
F.F. Sizov**, N.N. Mikhailov***, R.N. Smirnov***
Drogobych State Pedagogical University, Drogobych, Ukraine
*National University "Lviv Polytechnica", Lviv, Ukraine
** V.E. Lashkaryov Institute of Semiconductor Physics NAS, Kiev, Ukraine
***Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
****Institute of Physics, Rzeszow University, Rzeszow, Poland
Section Б
Thursday, May 29
Б01 Injection and thermoactivation currents in monocrystals TlInS2
A.A. Ismailov, N.D. Achmedzade, M.M. Shirinov
Institute of Physics of NAS, Baku, Azerbayjan
Б02 High-precision laser rangefinder
Kh.A. Asadov, F.I. Kasimova, N.H. Javadov*
National Aerospace Agency, Baku, Azerbaijan
*National Aviation Academy , Baku, Azerbaijan
Б03 Increasing of efficiency of charge transfer with assistant of two-channel
CCD
N.H. Javadov, E.S. Mamedov
National Aviation Academy , Baku, Azerbaijan
Technical University, Baku, Azerbaijan
Б04 Increasing of sensitivity of thermal radiation detectors
A.M. Pashaev, F.D. Kasimov, E.T. Gasarkhanov
National Aviation Academy, Baku, Azerbaijan
Б05 Multispectral assembly for optical image’s filtering
A.N. Sviridov, A.M. Filachev, V.P. Ponomarenko, A.S. Kononov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б06 Metamaterial optical-electronic device with nanodimensional layer for
optical radiation λ=10,6 μm control
A.N. Sviridov, V.P. Ponomarenko, A.S. Kononov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
25
Б07 Feature fabrication of two-dimensional radiation detector based on
semiconductor films with anomalous photo voltage
N.R. Rakhimof, O.K. Ushakov, B.N. Rakhimof
SGGA, Novjsibirsk, Russia
PI, Fergana, Uzbekistan
Б08 Longitudinal capillary canals for heat pipes designed for thermal control
system
A.I. Abrosymov, V.K. Sysoev, A.A. Verlan, N.N. Zubkov*, U.N. Bulkin**
Lavochkin Association, Khimki, Russia,
*MVTI named after N.E. Bauman, Moscow, Russia
**RFNTS-VNIIEF, Sarov, Russia
Б09 Acousto-electronic interaction and piezo-properties of ε-GaSe
G.I. Abutalybov, S.Z. Dzhafarova, N.A. Ragimova*
Institute of Physics of the NAS, Baku, Azerbaijan
*Baku State University, Baku, Azerbaijan
Б10 Low profile night vision goggles
V.M. Belokonev, V.G. Volkov, G.A. Leonova, V.L. Salicov
Federal State Unitary Enterprise “ALPHA”, Moscow, Russia
Б11 Unified TV guide system for observations of stars with large optical
telescopes
V.V. Komarov
Special Astrophysical Observatory of RAS, N-Arkhyz, KChR, Russia
Б12 Research of one of the first EM-CCD CCTV cameras in observations of
celestial objects
V.V. Vlasjuk, V.V. Komarov, A.F. Fomenko, V.S. Shergin
Special Astrophysical Observatory of RAS, N-Arkhyz, KChR, Russia
Б13 Developing of the night sky vision systems for real-time remote monitoring
of overcast condition
V.V. Vitkovskij, V.V. Vlasjuk, V.V. Komarov, A.F. Fomenko, V.S. Shergin
Special Astrophysical Observatory of RAS, N-Arkhyz, KChR, Russia
Б14 Modification photocurrent spectrum’s of single crystal TlGaSe2 doped Fe
S.N. Mustafaeva, A.I. Gasanov, E.M. Kerimova
Institute of Physics of NAS, Baku, Azerbayjan
Б15 Planar magnetron use for micron and nanometer thickness ferromagnetic
film deposition
A.N. Yurkov, T.V. Vlasova, G.A. Krikunov, M.A. Kononov
A.M. Prokhorov´s General Physics Institute RAS, Moscow Russia
Б16 The influence of the surface conductivity of a semiconductor electrode on
the distribution of the gas-discharge current
V.I. Orbukh, N.N. Lebedeva, Ye.Yu. Bobrova
Baku State University, Baku, Azerbaijan
26
Б17 Asymmetry of the current-voltage characteristics of the gas-discharge
structure with a semiconductor electrode
N.N. Lebedeva, V.I. Orbukh, Ye.Yu. Bobrova, G.M. Eivazova
Baku State University, Baku, Azerbaijan
Б18 Regularizing of persistence of the IR-photosensitivity in layered crystals of
InSe
A.Sh. Abdinov, R.F. Babayeva, R.M. Rzaev
Baku State University, Baku, Azerbaijan
Б19 Dependence of breakdown voltage of Schottky diodes from the geometrical
size of the contact
A.R. Aslanova, T.H. Ismailov
Baku State University, Baku, Azerbaijan
Б20 Polarizer for extracting of optical radiance given polarization component
R.M. Kasimov, R.A. Karamaliev
Institute of Chemical problems NAS, Baku, Azerbaijan
Baku State University, Baku, Azerbaijan
Б21 The absorption by free carriers in thin films n-Ag4STe
Sh. Alekperova, A. Aliev, I. Akhmedov, G. Gadjieva, Kh. Djalilova
Institute of Physics of the NAS, Baku, Azerbaijan
Б22 Infra-red objectives encapsulation problems
S.V. Solk, V.E. Sabinin, A.A. Yakovlev
FSUE OEP, Sosnovyiy Bor, Leningrad region, Russia
Б23 Diaphragm leafs fabrication technology
V.S. Makin, Yu.I. Pestov, S.V. Solk
FSUE OEP, Sosnovyiy Bor, Leningrad region, Russia
Б24 Optical coating’s inspection resistance to dust dynamic force
V.E. Sabinin, S.V. Solk
FSUE OEP, Sosnovyiy Bor, Leningrad region, Russia
Б25 Analysis of the main steps of technical and economic assessment of
management decision on high-tech enterprise
M.D. Korneeva, A.I. Dvorak, G.L. Maslennikova, M.V. Grigorjeva, G.V. Korneeva
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б26 Features of building and protecting enterprises’ intellectual property for
raising competitive capability of these enterprises
M.D. Korneeva, A.I. Dvorak, G.L. Maslennikova, M.V. Grigorjeva, G.V. Korneeva
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б27 Factors and methods of estimate influenced on product competitiveness,
and activities for raising the competitive capability
M.D. Korneeva, A.I. Dvorak, G.L. Maslennikova, M.V. Grigorjeva, G.V. Korneeva
State Scientific Center «RD&P Center «Orion», Moscow, Russia
27
Б28 Method of productive activity estimate on high-tech scientific production
enterprise
M.D. Korneeva, A.I. Dvorak, G.L. Maslennikova, M.V. Grigorjeva, G.V. Korneeva
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б29 Limiting resolution meseaurnents of optical elements in infra-red spectrum
range
V.S. Nuzhin, S.V. Solk, V.E. Sabinin
FSUE OEP, p. Sosnovyiy Bor, Leningrad region, Russia
Б30 Recent progress and development tendency of SoS technology
O.N. Ermakov , A. P. Karatsyuba , A. Yu. Smetanov
“Sapfir” JSC, Moscow , Russia
Б31 Hybrid organic – inorganic light emitting diodes for optoelectronics
O.N. Ermakov
“Sapfir” JSC , Moscow, Russia
Б32 Comparative analysis and modeling of organic and inorganic diodes for
integrated optoelectronics
O.N. Ermakov
“Sapfir” JSC , Moscow, Russia
Б33 Polymer composites for microelectronics and optoelectronics
O.N. Ermakov
“Sapfir” JSC, Moscow , Russia
Б34 Photometric accuracy enchancement of CCD camera for astrophysical
researches
E.A. Rahimov
The National Space Agency, Baku, Azerbaijan
Б35 Switching effect and photoelcetric properties of In2O3-SiO2-Si-SiO2-Mе
structures
A.Z. Badalov
The National Academy of Aviation of Azerbaijan
Б36 The short–range order in thin amorphous films of Yb3(1-x)SmxAs4Se9
(x=0,2%)
E.Sh. Hajiyev, A.I. Madadzade, D.I. Ismayilov
Institute of Physics of the NAS, Baku, Azerbaijan
Б37 Structure and optical properties of Pb1-xMnxSe:Ga epitaxial films
I.R. Nuriyev, E.Yu. Salayev, M.B. Gadzhiyev, Kh.D. Jalilova, R.M. Sadigov, A.M. Nazarov,
B.Sh. Barkhalov
Institute of Physics of the NAS, Baku, Azerbaijan
28
Б38 Acoustophotovoltaic effect in TlIn1-xGdxSe2 (x=0; 0.02) single crystals
E.M. Godjaev, А.М. Nazarov*, А.А. Мovsumov**, Kh.S. Khalilova, B.Sh. Barkhalov*
Azerbaijan Technical University, Baku, Azerbaijan
*Institute of Physics of the NAS, Baku, Azerbaijan
**National Aviation Academy, Baku, Azerbaijan
Б39 Features of photo-electric parameters of the crystal TlIn0,98Pr0,02Se2 and
resistors on its basis
E.M. Godjaev, G.S. Dzhafarova, А.М. Nazarov*, S.A. Aliev
Azerbaijan Technical University, Baku, Azerbaijan
*Institute of Physics of the NAS, Baku, Azerbaijan
Б40 The nature of optical phenomena’s in selective radiation
photothermoconvertor
A.M. Kasymahunova, M.B. Nabiev*, R.Ya. Rasulov*, Sh.A. Olimov
Politechnical Institute, Fergana, Uzbekistan
*Fergana State University, Fergana, Uzbekistan
Б41 Calculation of photosensitivity of porous silicon with cylindrical geometry
of pores
L.S. Monastyrsky, B.S. Sokolovsky, V.S.Vasylyshyn
Ivan Franko National University, Lviv, Ukraine
Б42 Wide-format superhighsensitive module transmitters of third generation
S.A. Plakhov, I.N. Surikov
OJSC “NRI Electron”, St. Petersburg, Russia
Б43 Application of photomultipliers with mesh dynodes for detection of pulse
light beams in wide range
V.N. Lukianov, V.M. Frolov, L.P. Shusterman*, A.I. Stepanov*, L.A. Spivak*
OJSC “NRI Electron”, St. Petersburg, Russia
*CJSC “Electrozond”, Saint-Petersburg, Russia
Б44 The InAs structures of 76 mm diameter for infrared devices
D.M. Grama, A.S. Petrov, S.D. Popov, E.V. Chilaeva
OJSC “NRI Electron”, St. Petersburg, Russia
Б45 Photocathode with sweeping electrical field for 0.9 – 1.7 μm spectral range
M.R. Ainbund, I.S. Vasiliev, I.N. Gomin, S.N. Kudryashova, E.E. Levina, A.V. Pashuk
OJSC “NRI Electron”, St. Petersburg, Russia
Б46 Investigation of the process of chemical-mechanical polishing of zinc
selenide using the aqueous solutions of inorganic acids and bases
U.P. Klepikova, Q.V. Timofeev
Institute of Chemistry of High-Purity Substances, Nizhny Novgorod, Russia
Б47 Computer investigation of the polished surfaces of polycrystalline zinc
chalcogenides
E.M. Gavrishchuk, E.Yu. Vilkova, A.N. Kolesnikov, O.V. Timofeev
Institute of Chemistry of High-Purity Substances, Nizhny Novgorod, Russia
29
Б48 About “Holst`s glass”
O.D. Potapkin
Institute of Radioengineering Electronics & Automation,Moscow, Russia
Б49 A inspection device of semiconductor nanostructures layer growth for
photoelectronics
O.D. Potapkin
Institute of Radioengineering Electronics & Automation,Moscow, Russia
Б50 Light-controllable deflector
Y.N. Perepelitsyn, N.V. Zhavoronkov*, A.A. Kleschev**
Institute of Radio Engineering and Electronics of RAS, Saratov Department, Saratov, Russia
*Research Institute of Material Science and Technology, Zelenograd, Russia
**Saratov State University, Saratov, Russia;
Б51 Phase creation in films of system Ag-Ga-Se
A.Ch. Mamedova, D.I. Ismailov
Phisical Institute of NAS, Baku, Azerbaijan
Б52 Investigations of GaP with р-n junction photodiodes at temperatures up to
500°С
V.S. Rudnevsky, V.I. Stafeev
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б53 Optical cryostat and thermostat for UV, visible and SWIR photodetectors
investigations
V.S. Rudnevsky
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б54 GaP Shottky photodiodes properties at high temperatures
Rudnevsky V.S., Stafeev V. I.
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б55 Solid solutions of ZnSxSe1-x zinc chalcogenides as promising materials for
IR-optics
D.V. Savin, V.B. Ikonnikov
Institute of Chemistry of High-Purity Substances of RAS, Nizhny Novgorod, Russia
Б56 Modification of HgCdTe electrical properties by laser shock waves
Nicolas Berchenko*, **, Vitaly Yakovyna*, Yuri Nikiforov***
* Lviv Polytechnic National University, Lviv, Ukraine
** Institute of Physics, Rzeszow University, Rzeszow, Poland
*** Ternopil State Technical University, Ternopil, Ukraine
Б57 To the question of magnetic superconductor’s theory
D.V. Kreopalov*, A.M. Savchenko, M.A. Savchenko
Moscow State University, Moscow, Russia
*Bauman Moscow State Technical college, Moscow, Russia
30
Б58 The concept of clear rooms for manufacture of photoelectronic products
components on an example of the production cycle in the block
D.A. Molodtsov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б59 Video information layout during conferences and meeting carrying using
ATEN equipment
A. Karyakin
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б60 Photoelectric properties of germanium photodiodes with zirconium dioxide
layers applied by magnetron method
T.N. Grishina, N.N. Kichina, L.A. Kosukhina, M.S. Sidorov, M.A. Trishenkov, A.E.
Troshkov, P.E. Khakuashev, T.A. Hromova, I.V. Chinareva
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б61 Wideband panoramic direction-finder of laser radiation
L.I. Gorelik, К.М. Kulikov, J.P. Sharonov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б62 Influence of a background illumination on the dynamic range of the
photodetector based on the photoresistor (CdxHg1-xTe)
L.I. Gorelik, K.M. Kulikov, V.E. Lozhnikov В.Е., A.N. Sorokin*, A.A. Utkin*,
Yu.P. Sharonov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
* MIPT, Dolgoprudnyi Russia
Б63 Optimal detection of laser impulses by photoresistors with huge iterance
S.V. Bushman*, L.I. Gorelik, K.M. Kulikov, J.P. Sharonov, A.N. Sorokin*, A.A. Utkin*,
State Scientific Center «RD&P Center «Orion», Moscow, Russia
* MIPT, Dolgoprudnyi Russia
Б64 Solid solutions of monocrystals Cd1-xZnxTe for ionizing radiation detectors
A.A. Mel’nikov, N.A. Kul’chizkiy
Institute of Radioengineering Electronics & Automation,Moscow, Russia
Б65 Semiconductor uncoiled detectors based on solid solutions of monocrystals
Cd1-xZnxTe spectrometric characteristic
A.A. Mel’nikov, N.A. Kul’chizkiy
Institute of Radioengineering Electronics & Automation,Moscow, Russia
Б66 Intensity determination of atomic and molecular beams based on electrons
small-angle scattering in the process of molecular-beam epitaxy
A.A. Mel’nikov, N.A. Kul’chizkiy
Institute of Radioengineering Electronics & Automation,Moscow, Russia
Б67 Planar p+-n junctions on Si and InSb peculiarity
V.P. Astakhov, G.M. Lihatchov
JSC “MZ “Sapphire”, Moscow, Russia
31
Б68 The ring 96-elements silicon pin-photodiode
V.P. Astakhov, N.I. Evstafjeva, V.V. Karpov, G.M. Lihatchev, A.M. Polejaev, K.V. Sorokin,
N.V. Filipenko
JSC “MZ “Sapphire”, Moscow, Russia
Б69 Technology process automation of anti-reflecting coatings in IR spectrum
range
A.N. Kozlov, A.E. Danilovskiy, A.I. Zaicev, L.A. Mozganova, A.V. Scherbakov,
A.A. Yur’ev
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б70 Increasing mechanical and chemical surface stability
of optical glass of the borolanthanum group
S.P. Avdeev, S.N. Petrov, P.V. Serba, E.Y. Gusev
Technological Institute of the Southern Federal University, Taganrog, Russia
Б71 The data backup and archive enterprise network systems and its role in
docflow and workflow processes for microphotoelectronic design and
manufacturing
L.Ya. Grinchenko, M.V. Bannikov, A.A. Zaytsev, S.S. Khromov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б72 System concept to enterprise engineering equipment and production
facilities automation management
L.Ya. Grinchenko
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б73 Photoelectrical characteristics of solid solution’s TlGa1-xInxSe2
E.M. Kerimova, N.Z. Gasanov, A.Z. Abasova, S.S. Abindekov, P.G. Ismailova
Physical Institute of NAS, Baku, Azerbaijan
Б74 Analysis night driver’s systems
Yu. A. Dobrovol’skiy, N.F. Koschavtsev, A.N. Tokarev
JSC “Katod” Branch “Special Design Office Of Night Vision Devices”, Moscow, Russia
Б75 Night vision sights
Yu. A. Dobrovol’skiy, N.F. Koschavtsev, A.N. Tokarev, N.M. Shustov
JSC “Katod” Branch “Special Design Office Of Night Vision Devices”, Moscow, Russia
Б76 Laser cutting of the plates on crystals in optoelectronics
P.D. Gindin
JSC “MZ “Sapphire”, Moscow, Russia
Б77 The features of construction CAD system for infrared
microphotoelectronics
S.S. Khromov, L.Y. Grinchenko, A.A. Zaytsev, D.N. Shimko, D.A. Shirokov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
32
Б78 The basic principles of construction enterprise computer-integrated
management system for optoelectronic manufactory
L.Ya. Grinchenko, S.S. Khromov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б79 Business modeling is the way of construction enterprise computer-
integrated management system for microphotoelectronic manufactory
L.Ya. Grinchenko, S.S. Khromov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
Б80 Gas-distribution system function in modern semiconductor production
V.M. Proskurin, N.V. Smirnov
State Scientific Center «RD&P Center «Orion», Moscow, Russia
33
