ORAL PRESENTATIONS

   1. R. Adomavičius, S. Balakauskas, K. Bertulis, A. Geižutis, G. Molis,
A. Krotkus, Low temperature MBE grown GaAs for pulsed THz radiation
    2. K. N. Alekseev, P. Pietilainen, F. V. Kusmartsev, New mechanisms for
rectification of THz radiation in semiconductor superlattices.
    3. V. Ya. Aleshkin, L. Reggiani, M. Rosini, Frequency dependence of shot noise
in coherent resonant diodes.
    4. E. Anisimovas, A. Matulis, F. M. Peeters, Classical nature of quantum dots in
a strong magnetic field.
    5. S. Ašmontas, S. Balakauskas, J. Gradauskas, D. Seliuta, E. Širmulis,
A. Sužiedėlis, V. Tamošiūnas, G. Valušis, T. Anbinderis, A. Narkūnas, I.
Papsujeva, A. Lisauskas, H. G. Roskos, K. Köhler, Broad band THz sensing by
2DEG bow-tie-type diodes.
    6. N.N.Beletskii, S.A.Borysenko, Spin-dependent electron transport in double-
barrier semimagnetic - semiconductor nanostructures.
   7. A. A. Belyanin, V. V. Kocharovsky, Vl. V. Kocharovsky, D. S. Pestov,
Far-infrared few-cycle-pulse generation in heterostructures with asymmetric quantum
wells under femtosecond laser pumping.
    8. V. Dorosinets, P. Richter, H. G. Roskos,Ultrafast optical and magneto-
optical dynamics in colossal-magnetoresistance (CMR) manganites.
   9. A. V. Efanov, T. S. Shamirzaev, K. S. Zhuravlev, J. Fuerst, H. Pascher,
Optical orientation of free excitons in high purity AlGaAs layers.
    10. M. P. Halsall, B. Sherliker, P. Harrison, V. D. Jovanović, D. Indjin,
Z. Ikonić, P. D. Buckle, T. Wang, M. A. Whitehead, P. J. Parbrook, J. Phillips,
D. Carder, Nitride based QWIPs for mid and far-infrared applications.
    11. V. Yu. Ivanov, M. Godlewski, S. Miasoedovas, S. Juršėnas, K.
Kazlauskas, A. Žukauskas, S C. Skierbiszewski, M. Siekacz, M. Leszczynski,
P. Perlin, T. Suski, S. Porowski, Properties and dynamics of a stimulated emission
from the MBE grown homoepitaxial InGaN-based MQW structures.
   12. A. Jukna, Ultrafast photoresponse of dc-biased YBa2Cu3O7-δ microbridges
induced by high-fluence femtosecond pulses.
   13. S. Juršėnas, S. Miasojedovas, G. Kurilčik, A. Žukauskas, R. Aleksiejūnas,
T. Malinauskas, M. Sūdžius. K. Jarašiūnas, Transients of carrier recombination
and diffusion in highly excited GaN studied by photoluminescence and four-wave
mixing techniques.
    14. M. S. Kagan, I. V. Altukhov, V. P. Sinis, E. G. Chirkova, R. T. Troeger,
S. K. Ray. J. Kolodzey, A. A Prokofiev, M. A. Odnoblyudov, I. N. Yassievich,
Stimulated THz emission of strained p-Ge and SiGe/Si structures.
    15. Z. F. Krasilnik, Yu. N. Drozdov, D. N. Lobanov, A. V. Novikov,
M. V. Shaleev, N. V. Vostokov, A. N. Yablonskii, GeSi/Si(001) structures with self-
assembled islands: growth, characterization and optical properties.
    16. A. Lisauskas, C. Blöser, R. Sachs, H. G. Roskos, A. Juozapavičius,
G. Valušis, K. Köhler, Dynamics of the electric field in a GaAs/AlGaAs superlattice
after optical excitation: Study by time-resolved spectroscopic techniques.
    17. A. Matulionis, J. Liberis, L. F. Eastman, A. Vertiatchikh, Y.-J. Sun,
D. Pavlidis, S. Hubbard, Comparative analysis of electron transport and noise in
AlN/GaN and AlGaN/AlN/GaN channels
    18. A. Medvid’, Y. Fukuda, Y. Anma, T. Puritis, A. Michko, P. Onufrievs,
Properties of 2D super lattice formed on a surface of Ge single crystal by YAG:Nd
    19. E. Starikov, P. Shiktorov, V. Gružinskis. Varani, J. C. Vaissiere,
C. Palermo, L. Reggiani, Monte Carlo calculation of high frequency mobility and
diffusion noise in nitride-based semiconductors.
    20. V. Tamošiūnas, Ž. Kancleris, M. Dagys, R. Simniškis, M. Tamošiūnienė,
G. Valušis, G. Strasser, K. Unterrainer, Finite-difference time-domain simulation
of mid- and far- infrared quantum cascade lasers.
   21. V. Tulupenko, S. T. Yen, E. S. Cheng, A. Dalakyan, C. P. Lee, K. A. Chao
V. Belykh, A. Abramov, V. Ryzhkov, Hole capture by resonant levels in boron
doped silicon.
    22. L.E.Vorobjev, D.A.Firsov, V.A.Shalygin, V.Yu.Panevin, N.K.Fedosov,
S. Schmidt, E.Zibik, A.Seilmeier, V.V.Kapaev, Dynamics of the intraband light
absorption in selectively doped double GaAs/AlGaAs quantum wells
     23. I.N.Yassievich, M.A.Odnoblyudov, A.A.Prokofiev, Polaron effects for
shallow centers in semiconductors.

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