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Electrostatic Discharge Susceptibility Data 1995

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					                                                                                      VZAP-95




 Electrostatic Discharge
Susceptibility Data 1995


  Prepared by: William Denson, William Crowell, Paul Jaworski, David Mahar




                                           RAC
                                            i
                                            Reliability Information Analysis Center

                             RIAC is a DoD Information Analysis Center sponsored by
                                     the Defense Technical Information Center
                             TABLE OF CONTENTS
                                                                   Page
SECTION 1      INTRODUCTION                                         1-1
              1.0  INTRODUCTION                                     1-1
              1.1  BACKGROUND                                       1-1
              1.2  DOCUMENT ORGANIZATION                            1-1
              1.3 USE OF THIS DATA                                  1-2
              1.4 INTERPRETATION OF DATA                            1-6
              1.5 CONVERSION OF EMP OVERSTRESS TEST DATA            1-7
                   TO THE ESD HUMAN BODY MODEL
              1.6 VARIABILITY ASSOCIATED WITH CONVENTIONAL          1-9
                   TEST METHODS
              1.7  SUMMARY AND CONCLUSIONS                         1-10
SECTION   2   DEVICE SUSCEPTIBILITY PROFILES                        2-1
SECTION   3   MICROCIRCUIT SUSCEPTIBILITY TEST DATA                 3-1
SECTION   4   DISCRETE SEMICONDUCTOR SUSCEPTIBILITY TEST DATA       4-1
SECTION   5   PASSIVE SUSCEPTIBILITY TEST DATA                      5-1
SECTION   6   DATA SOURCES                                          6-1
              6.0 DATA SOURCES                                      6-1
SECTION 7     REFERENCES                                            7-1
APPENDIX A    MANUFACTURER INDEX                                   A-l
APPENDIX B    FAILURE CRITERIA INDEX                               B-l
APPENDIX C    TEST REMARKS INDEX                                   C-1
APPENDIX D    GENERAL REMARK INDEX                                 D-l
APPENDIX E    TEST METHOD INDEX            '".".                    E-l
APPENDIX F    PIN COMBINATION INDEX                                 F-l
INDEX 1       SLASH NUMBER INDEX                                SIND-1
INDEX 2       PART NUMBER INDEX                                 PIND-1




                                  -VI1-
                                 LIST OF TABLES
TABLE 1-1      DEFINITION OF VZAP TEST PARAMETERS                         1-4
TABLE 1-2      DATA ITEM DESCRIPTION DI-RELI-80670                        1-5
TABLE 1-3      DERIVATION OF DATA CONVERSION FORMULAE                     1-8
TABLE 2-1      SUSCEPTIBILITY SUMMARY SORTED BY DEVICE TYPE, TECHNOLOGY   2-1
TABLE 2-2      SUSCEPTIBILITY SLMMARY SORTED BY TECHNOLOGY, DEVICE TYPE   2-3
TABLE 2-3      SUSCEPTIBILITY PROFILE FOR DISCRETE SEMICONDUCTORS         2-5

                                 LIST OF FIGURES
FIGURE   1-1   EMP VS. ESD DATA                                           1-9
FIGURE   1-2   FAILURE DISTRIBUTION FOR TESTER #1                         1-11
FIGURE   1-3   FAILURE DISTRIBUTION FOR TESTER #2                         1-11
FIGURE   1-4   STEP-STRESS RESULTS FOR 74F04                              1-12
FIGURE   1-5   STEP-STRESS RESULTS FOR 74F175                             1-12




                                   -via-
 SECTION 1:
INTRODUCTION
VZAP-95                                                                 Introduction                          1-1


1.0 INTRODUCTION
This databook is a cumulative compendium of Electrostatic Discharge (ESD) susceptibility test data residing
in the RAC database. It was collected from a variety of sources and consists of data on integrated circuits,
discrete semiconductors and resistors.

The introductory material of this publication is not intended to provide a tutorial on ESD testing or the physics
of ESD failures, but rather to provide enough information to allow the user of this document to effectively
interpret the presented data. This information will also give the user some insight into the usefulness and
limitations of the data.
1.1 Background

When the first in a series of ESD data compendiums (VZAP-1) was published in 1983, ESD was a relatively
immature field with a serious lack of standardization, especially in die area of ESD susceptibility testing.
Much of the VZAP-1 data was taken with non-standard ESD simulator circuits that deviated from the use of a
100 pF, 1500 ohm discharge model. Additionally, it was discovered subsequent to VZAP-1 that many of
these simulators, either commercially available or built in-house, have low degrees of repeatability due to
many uncontrolled variables. Although many of the reasons for this nonrepeatability have been studied,
understood, and corrected, there potentially still are sources for large degrees of variation in the test results.
A discussion of typical variability that exist in test results is given in Section 1.5.

VZAP-95 is the fifth version of this data compendium and includes data on approximately 150% more parts
than VZAP-91 (published in 1991). All of the new data was taken with the standard lOOpF, 1500 ohm
discharge model, much of it in accordance with MIL-STD-883, Method 3015.7. Method 3015.6 was the
first version of the MIL-STD-883 methods to require waveform verification to ensure consistency in test
results.
1.2 Document Organization

This document is organized into the following sections:
     Section 1 contains background data, information on use and interpretation of the data presented, data
     conversion algorithms, and variability inherent in the data.
     Section 2 contains profiles illustrating the relative susceptibility of various technologies and device
     types.
     Sections 3 thru 5 contain susceptibility data sorted by part number (not including letter prefixes),
     manufacturer, and device date code. Therefore parts 10501 and MC10501 will appear in succession in
     the manual with each specific manufacturer and device date code listed on a separate line.
     For ease of use to those who are familiar with VZAP-91, the following information is noted:
     • Parts included in this document but not included in VZAP-91 are flagged with a "*" prior to the part
       number.
     • Parts changing classification since VZAP-91 are flagged with a "-" prior to the part number.
     Section 3 contains detailed susceptibility test data on microcircuit devices.
     Section 4 contains detailed susceptibility test data on discrete semiconductor devices.

     Section 5 contains detailed susceptibility test data on passive devices.
    Section 6 contains brief descriptions of the various data sources used in this publication.
Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
1 -2      Introduction                                                                                               VZAP-95


       Section 7 contains document references.
       Slash# Index contains an integrated index of all slash numbers (MIL-M-38510 and MIL-S-19500) for
       Microcircuit and Discrete Devices. The index includes the slash number, part number, manufacturer,
       device date code, susceptibility classification, test method used to classify the part, and the pages (from
       Sections 3 thru 5) on which the detailed data can be found.

       Part Index contains an integrated index of all part numbers for Microcircuit, Discrete, and Passive
       Devices. The index includes the part number, (MIL-M-38510 & MIL-S-19500) slash number,
       manufacturer, device date code, susceptibility classification, test method used to classify me part, and
       reference pages (from Sections 3 thru 5).
1.3 Use of this Data

MIL-STD-1686B covers the requirements for the establishment and implementation of an ESD control
program, including identification of ESD Sensitive (ESDS) parts, assemblies, and equipments. Any
organization that designs, tests, inspects, services, manufacturers, processes, assembles, installs, packages,
labels, or otherwise handles electronic parts, assemblies, and equipment susceptible to ESD damage should
consider implementation of an ESD control program. The RAC has also published a document "ESD Control
in the Manufacturing Environment" to address these issues. At the time of this writing, MTL-STD-1686B
was the current version. The "C" version of the standard is in preparation and will contain significant
changes. However, the remainder of this discussion is based on the "B" version.

The first consideration in establishing an ESD control program in a specific application is the identification of
the susceptibility levels of the specific parts being used. This is true whether the program is being
implemented as a result of MEL-STD-1686B or not. Based on this information, an effective program can
then be designed and implemented without expensive overkill.

MIL-STD-1686B, Paragraph 5.2 states, "The contractor shall identify each ESD Sensitive (ESDS) part,
assembly, and equipment applicable to the contract as Class 1 or 2." In some cases Class 3 parts must also
be identified. Paragraph 5.2.1.1 further states:

     "ESD sensitivity classification for parts shall be determined as follows:

    (a)   ESD sensitivity as specified in the applicable part specification, or
    (b)   ESD sensitivity in accordance with Appendix A (of MIL-STD-1686B) test data contained in the Reliability Analysis
          Center (RAC) ESD Sensitive Items List (ESDSIL), or
    (c)   Classified in accordance with Appendix B (of MIL-STD-1686B), or,
    (d)   When specified, or at the option of the contractor when not specified, determine sensitivity by test (See Appendix A of
          MIL-STD-1686B). ESD sensitivity test data reporting shall be in accordance with the data ordering document included in
          the contract or order (See 6.2)."

 The data contained in this databook is essentially a compilation of ESD test data taken from a wide variety of
 sources. The ESDSIL database referred to in item (b) above is entitled the "Electrostatic Discharge Sensitive
 Items List." The intent of the ESDSIL database is to be a central repository of data taken as a result of the
 requirements of MIL-STD-1686B and Data Item Description (DID-RELI-80670). The classification test
 procedure in Appendix A of MIL-STD-1686B requires the use of the test circuit of MIL-STD-883, Method
 3015. At the time MIL-STD-1686B was issued the MIL-STD-883 test method in effect was Method
 3015.6. Since much of the data collected and included in this publication was performed in accordance with
 Method 3015.6 and 3015.7, most of this new data fulfills the requirements of (b).

 The older data in this publication that does not fulfill (b) is however more desirable than the use of (c) above
 which generically classifies components based on part type. Since 3015.6 was the first MIL-STD-883 ESD



Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
VZAP-95                                                                Introduction                          1-3


 test method to ensure reasonable confidence in test waveform characteristics, it is the most desirable test data
 available. The data types, in order of preference, can be summarized as follows:
      1)    MIL-STD-883, Method 3015.6 or later
      2)    MIL-STD-883, Method 3015.5 or earlier, or other lOOpF, 1500 ohm Human Body Model
            (HBM) tests, such as DOD-STD-1686
      3)    Non lOOpF, 1500 ohm HBM tests converted to an ESD susceptibility level consistent with the
            100 pF, 1500 ohm model
      4)    Electromagnetic Pulse (EMP) data converted to an ESD susceptibility level.

There is data contained in this document from all 4 items listed above although item 1 is the most
predominant. This is also the order of preference which was used in determining the ESD classification of
each part listed. A more detailed description of the test method used for each data entry is given in the
remarks field of Section three through five of this document.

In this publication unique devices are individually classified. The criteria RAC used to define a unique device
is a unique combination of part number, manufacturer and date code. For this reason, there are separate
classifications for the same part number from a particular manufacturer if in one case the date code was
known and in another case it was not known. This uniqueness criteria was chosen since me susceptibility
may be dependent on date of manufacture for a particular part if design or process changes were made.

Before the updates of DOD-STD-1686 to MIL-STD-1686A and MIL-STD-883 Method 3015.5 to 3015.6,
there were inconsistencies between DOD-STD-1686 and the MIL-STD-883 method of reporting ESD test
results. Specifically, the voltage susceptibility ranges were different, making it impossible to cross-correlate
test data. Both MIL-STD-1686A and MIL-STD-883, Method 3015.6 have been coordinated, thereby making
data taken from either useable for either purpose. In fact MTL-STD-1686A invokes the procedure of MIL-
STD-883 Method 3015. The classifications and their associated susceptibility ranges are as follows:
                                       Class 1        0-1999 V
                                       Class 2        2000-3999V
                                       Class 3        4000-15999V

This is the classification scheme that is used in this publication. In addition to these, RAC has defined Class
N to mean devices susceptible to levels above 15999 volts.
Since some of the older data in this publication was obtained from tests performed not in accordance with
MEL-STD-1686A or MIL-STD-883, classification in accordance with these standards becomes difficult. For
example, if testing was performed that yielded devices passing a test at 1000 volts but failing the test at 3000,
although it is known that the susceptibility level is 1000-3000 volts, the MIL-STD-1686A classification
cannot be precisely determined. In this example it is not known whether the device is Class 1 or 2. The
classification criteria used in this publication was to use the lowest failure voltage or the highest voltage at
which the device passed if no failure data existed. For example, if a device was observed to fail when tested
at 2000 volts only, it was classified as Class 1 since the actual threshold voltage is between 1 and 2000 volts.

As stated previously, all data present in this document was not taken from specific test methods, such as
Method 3015 of MIL-STD-883 but rather from a variety of test methods. Contained in this document are the
results of tests done in accordance with MIL-STD-883, Test Method 3015; tests similar to MIL-STD-883
Method 3015 but not strictly in accordance with it; tests using nonstandard simulation models and methods;
and EMP data that was converted to reflect ESD susceptibility levels. The EMP data was only used for
classification purposes in the cases in which there was no other empirical ESD susceptibility data. The
methodology used to convert EMP data to ESD susceptibility levels is given in Section 1.5.




Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
1 -4    Introduction                                                                                            VZAP-95


It should be noted that there can be significant differences in ESD susceptibility data between test taken in
accordance with Method 3015.6 and earlier versions in which the waveform was not tightly controlled. Data
taken from circuits in which the high frequency (i.e. > 100 MHz) performance has not been characterized
will lower failure thresholds. This potential exists due to the fact that there can exist high frequency, high
amplitude oscillations in some circuits which yield higher stressing amplitudes than that of the ideal RC
discharge waveform.
Additionally, there is a limited amount of Charged Device Model (CDM) test results. Even though CDM tests
are not yet incorporated into the ESD testing standards, there has been some data included in this publication
from tests performed with this model. Although the device classification schemes are only applicable for the
HBM, the CDM data that was available is included for completeness, considering that conventional
classifications with CDM data cannot be done.

Individuals or firms testing devices for ESD susceptibility are encouraged to submit the resulting data to the
Reliability Analysis Center for inclusion into the database. If desired, the source of data will be held
proprietary by RAC. This data does not need to be taken in accordance with the MIL-STD-883 test method,
but can be any empirical ESD susceptibility data. A recommended format for this data is shown in Table 1 -1.
Table 1-2, the Data Item Description (DID) DI-RELI-80670 called out in MIL-STD-1686A for submission of
ESD sensitivity data is also provided.

                          TABLE 1-1. DEFINITION OF VZAP TEST PARAMETERS
  Field                                                        Description
 SOURCE
     Name - Information pertaining to the company and person responsible for performing/compiling the results of ESD
     simulation.(Address, Phone Number)
 TESTER
  Manufacturer - Manufacturer of the ESD simulator being used
  Model Number - Model number and any revision information about the ESD simulator being used
  MIL-STD-883, Method 3015 version if applicable
 TEST SPEC. METHOD (The test method by which ESD simulation was performed)
  Test Method - If MIL-STD-883 Method 3015. was used, the version of 3015.X will be printed. Otherwise the resistance
  (in ohms) used in the simulation and the capacitance (in farads) used in the simulation will be noted
  Voltage Step Levels - For step stress testing, the voltage step levels used, forgo/no-go testing, the voltage applied
  # of Pulses Per Level - For step stress enter the total number of pulses applied at the maximum failed voltage applied
  Test Date - Date testing was performed
 DEVICE
  Part Number - Full device part number, prefix and suffix. In situations of drawing or in-house part numbers, the generic
  number when available. If parts are MDL-M-38510 or MIL-S-19500, slash numbers should also be provided
  Description - Full device description of component
  Manufacturer - Manufacturer of device being tested
  Date Code - Date code as found on device
 TEST RESULTS
  Pass or Fail - Results of the ESD simulation for each device tested
  # of Devices Tested - Number of devices tested
  Failure Voltage - The voltage at which the device met failure criterion
  Voltage Polarity - The polarity of the failed voltage reported
  Fail Pin Combination - The pin combination for which each test was performed and note which combination yielded a
  failure
  Failure Criterion - Explanation of wbat criterion was used to determine a failure




Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
 VZAP-95                                                                                         Introduction                                       1-5


                                  TABLE 1-2. DATA ITEM DESCRIPTION - DI-RELI-80670
                                                                                                                    Form Approved
                         DATA ITEM DESCRIPTION                                                                      OMB No. 0704-0188
Public reporting burden for this collection of information is estimated to average 110 hours per response, including the time for reviewing instructions
searching existing data sources, gathering and maintaining and data needed, and completing and reviewing the collection of information. Send comments
regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington
Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to
the Office of Management and Budget. Paperwork reduction Project (0704-0188), Washington, DC 20503.
1. TITLE                                                                                                           2. IDENTIFICATION NUMBER

Reporting Results of Electrostatic Discharge (ESD) Sensitivity Tests of Electrical and                            DI-RELI-80670A
Electronic Parts, Assemblies and Equipment
3. DESCRIPTION/PURPOSE

3.1 This report documents the sensitivity of electrical and electronic parts, assemblies and equipment to electrostatic discharge
(ESD) specified by the tests of MIL-STD-1686B Appendix A and Appendix C. This DID will be used to input part ESD
sensitivity data into the Reliability Analysis Center (RAC) ESD Sensitive Items List (ESDSIL).
4.    APPROVAL DATE               5. OFFICE OF PRIMARY RESPONSIBILITY (OPR) 6a. DTIC APPLICABLE                       6b. GIDEP APPLICABLE
      (YYMMDD)
      920828                                               SH
7.    APPLICATION/INTERRELATIONSHIP

7.1        This DID contains the format and content preparation instructions for ESD sensitivity test data resulting from the work
           tasks described by 5.2.1.1(d), 5.3.1(c) and 5.3.2(c) of MLL-STD-1686B.

7.2        This DID applies to all contracts which require ESD testing and classification of elecuical and electronic parts,
           assemblies and equipment.

7.3        This DID supersedes DI-RELI-80670.
8. APPROVAL LIMITATION                            9a. APPLICABLE FORMS                               9b. AMSC NUMBER

                                                                                                          N6780
10. PREPARATION INSTRUCTIONS

10.1         Content Requirements. The report shall include the following data:

      a.     Complete part/assembly/equipment part number
      b.     National stock number
      c.     Manufacturer
      d.     Part/assembly/equipment description and function
      e.     Date code (as it appears on the part - parts only), date of manufacture (assembly/equipment)
      f.     Assembly /equipment military nomenclature if applicable
             Number tested
             Test date (month and year)
             Test agency
      J-     Description of test setup
      k.     Number of parts/assemblies/equipment failed
      1.     ESD voltage level at which damage occurred
      m.     Highest ESD test voltage passed by all pin combination (parts only)
      n.     Highest ESD test voltage passed by all inputs, outputs, and interface connection points (assembly/equipment only)

10.1.1       The report shall include a description of criteria used to detect post stress failure.

10.2        Format. The report shall be in contractor format.

11. DISTRIBUTION STATEMENT

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
DD Form 1664, APR 89                                      Previous editions are obsolete                                    Page 1 of 1 Pages
135/23


Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
1-6      Introduction                                                                               VZAP-95


1.4 Interpretation of Data
The data contained herein is intended to present the results of empirical tests performed. Ideally, in addition
to voltage susceptibility levels, one would like to know specific failure mechanisms that caused the device to
fail. While manufacturers typically know the manner in which their part will fail when exposed to an ESD
transient, this data is not normally available to outside organizations. Therefore, die specific failure
mechanisms are not known. What is usually known is the failure mode (that is, the measurable effect of
damage), since in any ESD test there must be a means of detecting failure. The failure criteria in the data
contained herein is coded in field number 16 in section three through five and detailed in Appendix B.

The failure criterion used in establishing an ESD failure is critical to die outcome of the testing. This may be
illustrated by die use of two examples. In the first example, let us assume mat the failure criterion for a
bipolar device is defined as a certain percentage change in leakage current. This may be a difficult failure
criterion to implement, because the relationship of leakage current versus stress voltage itself is not well-
defined. In the second example, let us assume that the leakage current specification limits are used as the
failure criterion for the same parts. The device which we are testing is relatively tolerant to ESD and remains
within the specification limits when stressed with a pulse well below the damage threshold. Nevertheless,
there is a measurable change in the leakage current (i.e., the device has been degraded; however, it does not
exceed the specification until it is subsequently pulsed with a much higher energy pulse). Since we know
that some degradation has occurred, we can measure the degradation, but, because of the failure criterion, the
device is not considered susceptible to ESD damage at die lower level. For this reason, die criterion used to
detect device failure must also be selected in accordance with the device operating characteristics and the
manner in which the device is designed into a circuit; mat is, if a certain circuit configuration can tolerate a
parameter shift or even an out-of-specification condition of this component. Since it is impractical to require
unique failure criteria based on the manner in which the part is used in the circuit, MIL-STD-883, Method
3015 states mat devices shall be tested for failure following stressing by performing room temperature DC
parametric and functional tests. Performing both parametric and functional tests should identify any
degradation or failure of the device.

It is also recognized that failure modes and mechanisms are highly dependent on the simulation circuit used to
stress the device. There are various circuits being used in industry to simulate different ESD scenarios. The
most standard of these is the Human Body Model, in which a charged capacitance is discharged through a
resistor to the device under test. This Human Body Model is the most commonly used simulation model and
is specified in MIL-STD-1686B and MIL-STD-883 Method 3015. The resistance and capacitance values
specified in these standards are 100 pF and 1500 ohms, respectively. Omer values are often used and some
data in this publication use these values. The values used are listed in the detailed data (Sections 3-5). It
should be noted mat devices can exhibit different susceptibility characteristics depending on the values used.
Since there is a need to classify devices in a consistent manner, the RAC derived a conversion method for
data that was taken using a Human Body Model with resistance and capacitance values odier than 100 pF,
1500 ohms.

Using empirical methods, the RAC has established the following algorithm for the conversion:


                                           Vl = V 2 0 . 8 7 ) ^ |
where:
Vj         =    standard human body model damage threshold
R2         =    nonstandard value of resistance used (in ohms)
C2         =    nonstandard value of capacitance used (in pF)
V2         =    measured damage threshold using C2 and R2


Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
VZAP-95                                                                Introduction                         1-7


The derivation of this equation may be found in Table 1-3.
This method is only used so that a classification in accordance with the susceptibility levels of MIL-STD-
1686B can be made. The data in Section 3 through 5 presents both the classification of each part and the data
as it was obtained (i.e., the failure voltages of the actual model used during testing).
The purpose of this publication is not to provide background on the physics of ESD failures, as this has been
done extensively in the literature, but rather to present the data collected by RAC and give the reader enough
information so that the limitations of the data are fully understood. If further information is required, consult
MIL-HDBK-263A, "Electrostatic Discharge Control Handbook for the Protection of Electrical and Electronic
Parts, Assemblies, and Equipment (Excluding Electrically Initiated Explosive Devices)" and the proceedings
of the Annual EOS/ESD Symposium.

1.5 Conversion of EMP Overstress Test Data to the ESD Human Body Model

A vast amount of electrical overstress data has been compiled from Electromagnetic Pulse (EMP) studies. By
knowing certain parameters of a device, a theoretical ESD failure voltage can be estimated using the Wunsch-
Bell model (Reference 28) as the starting point. The following equation has been established to convert EMP
overstress data to the ESD Human Body Model equivalent:


                   -2V D + ' \ / 4 V D 2 + 1200 KT (7.675 x 10"7)            2

                V=                                                                  1530 + V D
                                             60

where:
           V           =       ESD threshold voltage
           Vp          =       measured overstress breakdown voltage
           Kj          =       failure constant 1
           K2          =       failure constant 2

The derivation of this equation may be found in Table 1-3.
To estimate the precision of the calculated ESD levels presented in this publication, data was compared for
specific devices which had both empirical ESD threshold data and ESD threshold levels calculated from EMP
data. The log of the ratio of ESD to EMP failure voltages was plotted such that a given percentage of
discrepancy (i.e., if the EMP level was the same percentage higher or lower than the ESD level) would be
                                                                                                      EMP
equidistant from the 0 line. Figure 1-1 is a histogram illustrating the relationship between the log (-pFfr) and
frequency of occurrence. If the datapoints were randomly distributed about the 0 line and the data did not
show a shift in distribution against any parameter, it could be concluded that the failure levels obtained from
EMP data were a fairly good indication of the actual susceptibility levels of the devices (not taking into
account random variations and noise in the data for any given device). Analysis of this data however,
                           EMP
indicated that the log feoff ) datapoints were not randomly distributed but rather correlated to vthe
susceptibility level. This indicates that the conversion algorithm is not perfectly accurate.




Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
1 -8         Introduction                                                                                                                      VZAP-95


                                  TABLE 1-3. DERIVATION OF DATA CONVERSION FORMULAE
The derivation of two data conversion methodologies are presented here:         For this reason this conversion was used to classify devices only in those
                                                                                cases where failure data from the lOOpF, 1500 ohm model was not
Part I Conversion of failure voltages using a nonstandard human body            available. This method is approximate and was used in the classification
model to a theoretical failure voltage consistent with the standard model       of devices only if data using the standard human body model was not
(100 pF, 1500 ohm). This is only used for calculating a failure voltage         available.
consistent with the 100 pF, 1500 ohm model so that a classification can be
derived in accordance with MIL-STD-1686A and MIL-HDBK-263.                      Part II: Derivation of EMP-to-ESD Conversion Formula

Part II Conversion of empirical EMP overstress data to a theoretical ESD        By knowing certain parameters of a device, a theoretical ESD failure
failure voltage.                                                                voltage can be calculated. The parameters needed for conversion of
                                                                                EMP overstress failure to a theoretical ESD failure voltage are
Parti:     Derivation of Nonstandard Human Body Model Test Data                 (Reference 25):
           Conversion Formula
                                                                                  R             Bulk resistance of the device
                                                                                   B
Since there is much data on parts using a discharge model other than the          Vp. =         Breakdown voltage of device
standard 100 pF, 1500 ohm, a method to convert the failure voltage to a
level consistent with the 100 pF, 1500 ohm model for classification               K, . =        Failure constant 1
purposes is necessary. One way this can be accomplished is via a                  K0 =          Failure constant 2
method similar to the EMP-to-ESD conversion method described in Part
II of this table. However, for this method to work, one must know certain       The basic equation used for this conversion is:            r         :K, . * »
parameters of the device, namely the bulk resistance and breakdown                                                                             AV
voltage.     Unfortunately, these parameters are seldom available
especially given the fact that for ICs the failure site is often not known.     where:
                                                                                          r
                                                                                          AV       average power required for failure
A more direct conversion technique was therefore needed which could                         t =    pulse width
convert data without knowing these device parameters. Since the failure                                         2
voltage of a device (the voltage on the capacitor) is proportional to the                   p =    VJ-J i + R„ i (time dependent power)
series resistance in the stressing circuits and inversely proportional to the             where i = time dependent current
capacitance in the circuit, the failure voltage, resistance, and
capacitance can be approximately related as follows:                                        P =        VD1V4      +
                                                                                                                       *W°T
                                                                                                                       B'P
                                                                                          where t                      RC time constant of discharge
                                       • ^
Here A is a constant dependent on the device parameters. Therefore              Integrating and averaging the power over 5 time constants yields:
the ratio of failure voltages for two different RC models is in the general
                                                                                                    5T                          5X
form:
                                                                                                                                          2   *
                                                                                      C
                                                                                          AV
                                                                                               -*/v      D       >**+wf              RB Ip e * dt
                                               R
                                                   !C2
                                               ^7                                         V
                                                                                         D P , . -5, , R„I„ „ -10,
                                                                                                       "B'P
                                                                                      = "-g—U-e ) + 1Q (1 - e )
                                                                                      (e"5 ande" 10 « 1)
where:
  V
    2 =   observed failure voltage using C , and R^
  C, =                                                                          therefore:
          capacitance used in nonstandard model (in pF)
  "2                                                                                                               Brp
                                                                                                                   R
          resistance used in nonstandard model (ohms)                                 r
  *2 =                                                                                    AV                     ' I F
 V        converted failure voltage
    l =
  C, =                                                                                         K2                 RTJ, "
          capacitance of model failure voltage is to be converted to (in                                           B'P
pF)                                                                                   V                                w
          resistance of model failure voltage is to be converted to (ohms)      Using the quadratic equation solution to solve for Ip :
      n
Therefore, when using 100 pF and 1500 ohm for C.                 and R
                                                                                     T         -2VD+V4Vr/+40RB(K.rK2)
respectively, the following conversion equation is obtained:

                         V
                                                                                               v-v D
                                  V 2 (3.87)
                             1 -= -2^-"'' \JR^                                        Ip = p   D — (general equation for Ip )
                                                                                                 B
The relationship of V, C, and R was obtained through empirical methods
(regression analysis) by reviewing data in which a device was tested with                            (V = voltage on capacitor)
                                                                                      V = Ip (R + R_) + V—     (R = source resistance of model)
different C, R models and threshold voltages obtained for each model
(Ref. 10, 14, 16, 17, 19, 25).                                                                                             ji
                                                                                Assuming t = 5t - 5RC - 7.675 x 10    for conversion to voltage level
It must also be stressed that this relationship of V, C and R indicates an      consistent with a 100 pF, 1500 ohm model and a nominal value of 30
                                                                                ohms for R„ yields:
energy-dependent failure mechanism. This may not be an adequate
assumption, if the failure mechanisms does not follow the Wunsch Bell
Model (Ref. 28). Since the failure mechanism for a particular device is
rarely known, this data conversion methodology is necessarily very                        -2V.D 2 + ^4VD2     + 1200Kj (7.675 x 10" 7 )" K 2
approximate.      Adding to this uncertainty is the fact that the failure        V=                               55                    :—:         1530 +V r
mechanism characteristics can change with various RC values.




Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
VZAP-95                                                                                      Introduction                     1-9


Based on this information it should be emphasized that the ESD susceptibility levels obtained from EMP data
are necessarily only approximate values. It can be seen from Figure 1-1 mat the EMP to ESD levels can
differ by as much as a factor of 10. There are various sources of error in converting EMP data to ESD data.
Two of these error sources are the uncertainty in the damage constants and the uncertainty in the device
parameters (bulk resistance and breakdown voltage). These uncertainties can stem from normal lot to lot
variations and differences among manufacturers.         Additionally, it is known that damage from EMP test
pulses may manifest itself as different failure mechanisms than damage from an ESD pulse. This is due to
the fact that an ESD pulse may be a shorter duration, higher current pulse relative to an EMP event. These
variations can easily cause a factor of 10 difference in the susceptibility levels. For this reason, EMP data is
used in this publication for classification purposes only in those cases where ESD data is not available. The
EMP data is identified as such in the remarks field (field no. 16) of the detailed data section.


                6     -

                5 -
          GO
          c
                4     -
         .2
          Z 3 -
          t/3

         O
                2     _
                1 —



                                                          1                                              M—r- 1 1 •
                    -l.C ) -.<?   -. i   -:7 -.(5 -.1   -.4   -1   -2   -.:    c    .i   2   .3 .4   .5 .6 .7 .8   .9   1.0
                                                                              EMP
                                                                   L0o eK(
                                                                   L g
                                                                              ESD^>
                                                FIGURE 1-1. EMP VS. ESD DATA
1.6 Variability Associated with Conventional Test Methods
Since ESD testing began, it has been recognized that there was a certain degree of variability in test results
due to the test apparatus itself. These variations were attributed to:
          Arcing of the high voltage switching relay
          Errors in calibration of the test voltages
          Leakage of the capacitor
          Parasitic inductances and capacitances
          Inconsistencies in the criteria used to detect failure
          Incomplete characterization of worst case pin combinations
Conventional ESD simulators probably effectively simulate a real ESD event from a charged person or object,
since a real ESD would have many of the parasitic R, L, and C values similar to that of the simulator
(Reference 8). The problem is, however, that the discharge waveform produced is uncontrolled and cannot
be used to obtain repeatable results. Many of these problems have been alleviated with the release of Method
3015.6, however, since much of the data contained herein is from methods previous to 3015.6, it is
important to understand the repeatability and variability of test results taken previous to 3015.6. To illustrate

Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
1-10     Introduction                                                                                  VZAP-95


this, Figures 1-2 and 1-3 present the data RAC has taken from two different conventional ESD simulators. A
sampling of 74LS08 devices were obtained of the same date code, attempting to minimize variations in the
device under test population. The most susceptible pin was found by step stressing a small sample of devices
on each pin until failure and detecting failures with a curve tracer.

Once the most susceptible pin was found, a sampling of 30 devices were step stressed to failure on this pin
for each of the two simulators. Voltage step increments of 25 volts were used to maximize the resolution of
failure voltage distributions. The intent of me study was to:

       (1)   Determine the failure voltage distribution of a typical device stressed with a conventional test
             apparatus.
       (2)   Identify differences in these distributions between two typical simulators.

Another study (Reference 26) with similar objectives yielded even a higher degree of variability. In this
study, a sampling of 74F04 and 74F175 devices were tested by three independent test labs. Figures 1-4 and
1-5 summarize these results.

These results were taken when ESD testing technology was less mature and testers were being built with little
regard for the subtleties involved in making an accurate and repeatable test circuit. Since the data contained in
this publication was obtained from a variety of testers, it is apparent that this inherent variability is present in
it.

In addition to the inherent variation in test apparatus and devices themselves, there can also exist large
variations between manufacturers. This is due to the fact that each manufacturer employs his own unique
methodologies and circuitry to protect devices, each with his own protection capability. If the manufacturer
was known, it is reported in the detailed data section of this publication.

1.7 Summary and Conclusions
This publication presents the most comprehensive compendium of electrostatic discharge susceptibility test
data currently available. This data is useful (and mandated by MIL-STD-1686B) for the establishment of
ESD control procedures based on the susceptibility of devices being handled, assembled, stored, etc. It is
important for the users of this information to understand the limitations of the data contained herein. To
accomplish this, previous discussions have addressed the different types of data included in this publication
as well as the variation inherent in it.

RAC also strongly encourages anyone performing ESD susceptibility tests to submit the results of those tests
to RAC for inclusion in the database and dissemination in future editions of this publication. If tests are
performed in accordance with MIL-STD-1686B, the results are required to be submitted to RAC as outlined
in the Data Item Description DI-RELI-80670 (given in Table 1-2). Table 1-1 provides a format for
submitting data if not done in accordance with a specific test method.




Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
VZAP-95                                                                          Introduction                            1-11


                                                             TESTER#1




        5       --

    #
        4       --
    F
    A
    I
        3       .-
    L
    U
    R




            WL                                                                   LJI                     H      r-
                 1850V 2000V 2150V 2300V 2450V 2600V 2750V 2900V 3050V 3200V 3350V 3500V 3650V 3800V 3950V 4100V 4250V
                                                         FAILURE VOLTAGE

                           FIGURE 1-2. FAILURE DISTRIBUTION FOR TESTER #1

                                                              TESTER#2
        y   -
                r
        8 .
                -
        7 •
    #           -
      6 -
    F     -
    A
      5 .
    I
    L
    U
    R
    E 3 -
          :
    S




                                                         J 1J
      2 -
          -
        1 .

        0 --
                -
                      ^                                                    H      \                 \     \  1
                1850V 2000V 2150V 2300V 2450V 2600V 2750V 2900V 3050V 3200V 3350V 3500V 3650V 3800V 3950V 4100V 4250V

                                                         FAILURE VOLTAGE

                           FIGURE 1-3. FAILURE DISTRIBUTION FOR TESTER #2

Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
1-12 Introduction                                                              VZAP-95


                           STEP STRESS TEST RESULTS FOR 74F04
          600   T

      F
      A   500
      I
      L
      U   400
      R                                                               • TESTER#1
      E
          300                                                         PTESTER#2
      V
      0                                                               •TESTER#3
      L   200
      T
      A
      G   100
      E

           0
                    PIN1     PIN3    PIN5   PIN9 ... PIN 11   PIN13
                                     PIN NUMBER

                       FIGURE 1-4. STEP-STRESS RESULTS FOR 74F04

                             STEP STRESS TEST RESULTS FOR 74F175
           3500




                                                                      • TESTERM

                                                                      PTESTER#2

                                                                      • TESTER#3




                     PIN1     PIN4   PIN5  PIN9     PIN12     PIN13
                                     PIN NUMBER
                       FIGURE 1-5. STEP-STRESS RESULTS FOR 74F175

Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
          SECTION 2:
DEVICE SUSCEPTIBILITY PROFILES
VZAP-95                                                       Device Susceptibility Profiles                2-1


2.0     DEVICE SUSCEPTIBILITY PROFILES
The relative susceptibility of devices from various device types and technologies are presented in Tables 2-1,
2-2 and 2-3. Each table contains the total percentage and Number of Unique Devices within each
Susceptibility Class for a particular technology or device type. Table 2-1 illustrates this relationship for all
Microcircuit devices sorted by part type and then technology, Table 2-2 presents microcircuits sorted by
technologies and then part type. Table 2-3 presents various discrete semiconductor device sorted by type.

       TABLE 2-1. SUSCEPTIBILITY SUMMARY SORTED BY DEVICE TYPE, TECHNOLOGY

                                                        Class 1            Class 2            Class 3
                                                     %      Number      %      Number      %      Number
                           ALSTTL                    55.7     166      36.6       109       7.7       23
                           ASTTL                    55.9      275      32.3       159      11.8       58
                           BiCMOS                   46.3        31     37.3        25     16.4         11
                           Bipolar                  63.5      261      29.4       121       7.1       29
                           CMOS                     75.0     1394       18.5      343       6.5      121
                           CMOS, Advanced           18.9        98      18.7       97     62.4       323
                           CMOS, High Speed         71.0      786      21.3       236       7.7       85
                           DTL                      18.2         2'    18.2         2     63.6          7
                           ECL(CML)                 90.0      171        3.7        7       6.3       12
                           HCMOS                    66.7         4     33.3         2       0.0         0
        Digital SSI/MSI    HTTL                     57.6        19     36.4        12       6.0         2
                           HYBRID                   99.6      471        0.4        2       0.0         0
                           IIL(MTL)                  0.0         0       0.0        0    100.0          3
                           LSTTL                    91.0      625        7.3       50       1.7       12
                           LTTL                     16.7         1     16.7         1     66.6          4
                           MOS                      95.0       19        5.0        1       0.0         0
                           N/R                      55.2       16      41.4        12       3.4         1
                           NMOS                     50.0         2     50.0         2       0.0         0
                           NMOS, Si Gate           100.0       20        0.0        0       0.0         0
                           STTL                     94.9      187        4.1        8       1.0         2
                           TTL                      43.0       74      47.1        81       9.9       17
                           All digital SSI/MSI     7 0 . 0 4622        19.2     1270     10.8       710
                           ALSTTL                   41.2       56      50.7        69       8.1       11
                           ASTTL                    44.6      145      39.4       128     16.0        52
                           Bi CMOS                  24.0       41      28.7        49     47.3        81
                           Bipolar                  67.7     1960      16.1      467      16.2      470
                           Bipolar/FET              71.2       37      17.3         9     11.5          6
                           Bipolar/JFET             68.7      101      17.7        26     13.6        20
        Linear/Interface   CMOS                     79.1      359      14.3        65       6.6       30
                           CMOS, Advanced            4.7         7       4.7        7     90.6       135
                           CMOS, High Speed         51.1      248      38.4       186     10.5        51
                           DTL                      25.0         1     50.0         2     25.0          1
                           ECL(CML)                 88.9       24        0.0        0      11.1         3
                           HMOS                    100.0         1       0.0        0       0.0         0
                           HYBRID                   91.9      318        2.3        8       5.8       20
                           IIL(MTL)                  0.0         0       0.0        0    100.0          1
                           LSTTL                    89.5      195        8.7       19       1.8         4
                           LTTL                      0.0         0    100.0         1       0.0        0




Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
2-2   Device Susceptibility          Profiles                                                VZAP-95


      TABLE 2-1. SUSCEPTIBILITY SUMMARY SORTED BY DEVICE TYPE, TECHNOLOGY
                                    (CONT'D)
                                                     Class 1           Class 2          Class 3
                                                  %       Number    %      Number     %     Number
                         MOS                     56.8         25   36.4        16     6.8        3
                         MOSFET                  30.0          6   70.0        14     0.0        0
                         N/R                     66.7         18    18.5        5    14.8        4
      Linear/Interface   NMOS                    90.0          9    10.0        1     0.0        0
                         NMOS, Si Gate          100.0         15     0.0        0     0.0        0
                         STTL                    96.3         26     3.7        1     0.0        0
                         TTL                     23.8         15   69.8        44     6.4        4
                         All linear/interface    6 4 . 2 3607      19.9     1117     15.9     896
                         ALSTTL                    0.0         0     0.0        0   100.0        2
                         ASTTL                   66.7          2     0.0        0    33.3        1
                         BiCMOS                    0.0         0   89.5        34    10.5        4
                         Bipolar                 81.8         27    18.2        6     0.0        0
                         CMOS                    58.5       2450   34.5      1445     7.0      291
                         CMOS, Advanced            0.0         0     0.0        0   100.0        2
                         CMOS, High Speed        89.2         74     9.6        8     1.2        1
         Memory          ECL(CML)                30.0          3   70.0         7     0.0        0
                         HYBRID                 100.0         83     0.0        0     0.0        0
                         LSTTL                  100.0          9     0.0        0     0.0        0
                         MNOS                    55.6          5   44.4         4     0.0        0
                         MOS                     91.2         83     5.5        5     3.3        3
                         N/R                    100.0         16     0.0        0     0.0        0
                         NMOS                    80.7         71    17.0       15     2.3        2
                         NMOS, Si Gate           94.1         16     5.9        1     0.0        0
                         PMOS                      0.0         0   50.0         1    50.0        1
                         STTL                    80.5        153     4.7        9    14.7       28
                         TTL                     93.1        136     4.8        7     2.1        3
                         All memory             6 2 . 5 3128       30.8     1542      6.7    338
                         ASTTL                  100.0          3     0.0        0     0.0        0
                         Bipolar                 70.8         46   27.7        18     1.5        1
                         CHMOS                  100.0         15     0.0        0     0.0        0
                         CMOS                    59.2        299   24.6       124    16.2       82
                         CMOS, Advanced          33.3          2     0.0        0    66.7        4
                         CMOS, High Speed        66.7         26   17.9         7    15.4        6
      Microprocessor     HMOS                   100.0          1     0.0        0     0.0        0
                         HL(MTL)                100.0          1     0.0        0     0.0        0
                         LSTTL                     0.0         0   72.7         8    27.3        3
                         MOS                     87.1         74     8.2        7     4.7        4
                         N/R                     50.0          2   50.0         2     0.0        0
                         NMOS                    82.1         32     7.7        3    10.2        4
                         NMOS, Si Gate           95.8         23     4.2        1     0.0        0
                         TTL                     57.1      . 12    38.1         8     4.8        1
                         TTL/ECL                100.0          4     0.0        0     0.0        0
                         All Microprocessors    65.6        540    21.6      178    12.8      105




Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
             SECTION 3:

MICROCIRCUIT SUSCEPTIBILITY TEST DATA
                                          DATA COLUMN DEFINITIONS
(1)               (2)                     (3)   (4)   (5)    (6) (7) (B) (9)    (10)   (11)   (12) (13)   (14)   (15)   (IS)   (17)
Part              Section Name and Page         BSD   Date   Tst 1st Tst Tst    Num    Num    T    Tst    pin    Pail   Tst    Gen
Number (Slash)    Description             Mfr   CIS   Code   Src Dte Typ Math   Pul    Dev    R    Vltg   Comb   Crit   Rem    Rem




      (1)        Part Number (Slash).       The part number of the device and slash number if available in
                 parenthesis.
                  "*" prefix indicates part is not included in VZAP-91.
                  "-" prefix indicates part has changed classification since VZAP-91.
      (2)     Description. Basic function of the device. Includes 'Technology" for Microcircuits in
              parenthesis.
      (3)     Mfr. Manufacturer of the device (see Appendix C).
      (4)     ESP Cls. The classification per MIL-STD-1686B and MIL-STD-883 based on the best available
              data.
      (5)     Date Code. Date code as it appeared on the device.
      (6)     Test Src. Source code - identifies the data source (see Section 6).
      (7)     Tst Dte. Date (month and year) the test was performed.
      (8)     Test Type. SS = Step Stress, i.e., the device was stressed in incremental voltages and tested for
              failure between each. GN = Go/No-Go, i.e., one voltage level only applied to the device and
              then tested for failure.
      (9)     Test Method. If MIL-STD-883 Method 3015 was used. The version of 3015.X will appear.
              Otherwise a reference to the resistance (in ohms) and the capacitance in (farads) of the discharge
              circuit will be provided to the table in Appendix E.
      (10)    Num Puis. The total number of pulses applied to the device at the voltage (field no. 13) before
              failure (if result = fail) or before testing for failure (if result - pass).
      (11)    Num Dev. The number of devices which were tested to the same stresses results (i.e., all other
              fields the same).
      (12)    T/R. Test result, i.e., whether the device passed = P or failed = F testing at the given test
              conditions.
      (13)    Test Volt. The voltage applied to the device (if the device was step-stressed and it failed during
              stepping, the failure voltage is given).
      (14)    Pin Comb. The pin combination tested: function, pin number, and polarity (if known) (see
              Appendix F). N/R = Not Reported
      (15)    Fail Crit. Criteria used to detect device failure (see Appendix B). NA = Not Applicable.
      (16)    Tst Rem. Any comment which clarifies the data with respect to the specific test record (see
              Appendix C). NA = Not Applicable.
      (17)   Gen Rem. Any comment which clarifies the test procedures or results (see Appendix D). NA =
              Not Applicable.
VZAP-95                                             Microcircuit Susceptibility Test Data                                                3-1
     Part                 Microcircuit 3-1                 ESD Date Tst Tst Tst Test                   Num Nura T Test      Pin Fail Tst Gen
     Number (Slash)       Description                  M£r els Code Src Dte Typ Meth                   Pul Dev R vltg       Gob Crit Rem Rem

 '    (60504BQA)          Array (CMOS)                 UTM     1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 •    (60514BMA)           Array (CMOS)                UTM     1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 '    (60514S4A)           Array (CMOS)                 UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 •    (60514SMA)           Array (CMOS)                UTM     1   N/R     469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 '    (60611)              Array (CMOS)                WEE     1    N/R    470    1293 SS     3015.7     3    5 F    1500    N/R     7     NA    16
 '    (60708BZA)           Array (CMOS)                UTM     1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 •    (60708BZC)           Array (CMOS)                UTM     1   N/R    469     0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 '    (60711BTA)           Array (CMOS)                UTM     1   N/R    469     0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 '    (60711BTC)           Array (CMOS)                UTM     1   N/R    469     0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 • (60711BZA)              Array (CMOS)                UTM     1   N/R    469     0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 1
    (60711BZC)             Array (CMOS)                UTM     1   N/R    469     0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
 ' (60811BZA)              Array (CMOS)                UTM     1   N/R    469     0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
    (H60514B4A)            Array (CMOS)                UTM    1    N/R    469     0394 SS    3015.7      3    5 F    1000    N/R     9     NA    16
    (H60614)               Array (CMOS)                UTM    1    N/R    470     1292 SS    3015.7     3     5 F    1000    N/R     7    NA     16
    (H60617)               Array (CMOS)                UTM    1    N/R    470    1292 SS     3015.7     3     5 F    1000    N/R     7    NA     16
    (H60714)               Array (CMOS)                UTM    1    N/R    470     1292 SS    3015.7     3     5 F    1000    N/R     7    NA     16
    (H60714BMA)            Array (CMOS)                UTM    1    N/R    469     0394 SS    3015.7     3     5 F    1000    N/R     9    NA     16
    (H60714BNA)            Array (CMOS)                UTM    1    N/R    469     0394 SS    3015.7     3     5 F    1000    N/R     9    NA     16
    (H60714BTA)            Array (CMOS)                UTM    1    N/R    469     0394 SS    3015.7     3     5 F    1000    N/R     9    NA     16
    (H60714SMA)            Array (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3     5 F    1000    N/R     9     NA    16
    (H60714SNA)            Array (CMOS)                UTM    1    N/R    469     0394 SS    3015.7     3     5 F    1000    N/R     9    NA     16
    (H60714STA)           Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R      9    NA    IS
    (H60717)               Array (CMOS)                UTM    1    N/R    470    1292 SS     3015.7     3     5 F   1000     N/R    7     NA    16
    (H60717B4C)            Array (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000     N/R     9    NA    16
    (H60717B5C)            Array (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3     5 F   1000     N/R     9    NA    16
    (H60717B6C)            Array (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3     5 F   1000     N/R     9    NA    16
    (H60717BMA)            Array (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3     5 F   1000     N/R     9    NA     16
    (H60717BMC)            Array (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3     5 F   1000     N/R     9    NA    16
    (H60717BTA)           Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R      9    NA    16
   (H60717BTC)            Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3     5 F   1000    N/R           NA    16
                                                                                                                                    9
    (H60717S4C)           Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R           NA    16
                                                                                                                                    9
    (H60717S5C)           Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R           NA    16
                                                                                                                                    9
    (H60717S6C)           Array                        UTM                                   3015.7     3    5 F    1000    N/R           NA    16
                                 (CMOS)                       1    N/R    469    0394 SS                                             9
    (H60717SMA)                                                                              3015.7
                          Array  (CMOS)                UTM    1    N/R    469    0394 SS                3    5 F    1000     N/R     9    NA    16
    (H60717SMC)
                           Array (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000     N/R     9    NA    16
    (H60717STA)
                           Array (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3     5 F   1000     N/R     9    NA    16
    (H60717STC)
                          Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R      9    NA    16
    (H60S14)
                          Array  (CMOS)                UTM    1    N/R    470    1292 SS     3015.7     3    5 F    1000    N/R     7     NA    16
    (H60814BMA)
    (H60814BYA)           .Array (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
    (H60814BZA)           Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
    (H60814SMA)           Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
    (H60814SYA)           Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
    (H60814SZA)           Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
    (H60317)              Array  (CMOS)                UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
    (H60817B7A)           Array  (CMOS)                UTM    1    N/R    470    1292 SS     3015.7     3    5 F    1000    N/R     7     NA    16
    (H60817B7C)           Array (CMOS)                 UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
   (H60817BZA)            Array (CMOS)                 UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
   (H60817BZC)            Array (CMOS)                 UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    IS
   (H60817S7A)            Array (CMOS)                 UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
   (HG0817S7C)            Array (CMOS)                 UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
   (H60817SZA)            Array (CMOS)                 UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
   (H60817SZC)            Array (CMOS)                 UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
   (MIL-O-55310/16-B)     Array (CMOS)                 UTM    1    N/R    469    0394 SS     3015.7     3    5 F    1000    N/R     9     NA    16
   FLP                    Oscillator (HYBRID)          THC    3    N/R    392    1286 SS     3015.2     1    5 F    5000    124    23     NA    NA
                          Microprocessor (CMOS)        IBM    1    N/R    457    1192 SS     3015.7     3    5 F    1999    N/R     7     NA    17
                                                                          459    1192 SS     3015.7     3    5 F    1999    N/R     7     NA    17
                                                       LAC    1    N/R    463    1192 SS     3015.7     3    5 F    1999    N/R     7     NA    17
                                                                                                             5 F    1999    N/R     7     NA    17
* CTS0002                 Amplifier (HYBRID)           CTS    1    N/R    466 1094 SS        3015.7     3    5 F    1999    N/R    10     NA    16
* ELH0002H/883B           Amplifier (HYBRID)           ELN    3    N/R    466 1094 SS        3015.7     3    5 P    2000    N/R    10     NA    16
                                                                                                             5 P    4000    N/R    10     NA    16
                                                                                                             5 F    15999   N/R    10     NA    16
     LH0002H/883B         Op. Amplifier (Bipolar)      NSC    3    N/R    442    0590   SS   3015.7     3    5 P    4000    N/R    56     NA    16
»    CTS0002X3            Amplifier (HYBRID)           CTS    1    N/R    466    1094   SS   3015.7     3    5 F    1999    N/R    10     NA    16
*    CTS00061B            Driver (HYBRID)              CTS    1    N/R    466    1094   SS   3015.7     3    5 F    1999    N/R    10     NA    16
*    CTS0008IB            Driver (HYBRID)              CTS    1    N/R    466    1094   SS   3015.7     3    5 F    1999    N/R    10     NA    16
*    MRG002-160A          Communication (Bipolar)      MIR    2    N/R    464    0894   SS   3015.7     3    5 P    2000    N/R     7     NA    17
                                                                                                             5 F    3999    N/R     7     NA    17
* MRG002-160B             Communication (Bipolar)      MIR    2    N/R    464 0894 SS        3015.7     3    5 P    2000    N/R     7     NA    17
                                                                                                             5 F    3999    N/R     7     NA    17
* ELH0021K/883B           Op. Amplifier (HYBRID)       ELN    1    N/R    466 1094 SS        3015.7     3    5 F    1999    N/R    10     NA    16
* CTS0021ZB               Op. Amplifier (HYBRID)       CTS    1    N/R    466 1094 SS        3015.7     3    5 F    1999    N/R    10     NA    16
* DS0026H/883             Driver (Bipolar)             NSC    3    N/R    469 0394 SS        3015.7     3    5 P    2000    N/R     9     NA    16
                                                                                                             5 P    4000    N/R     9     NA    16
                                                                                                             S F    15999   N/R     9     NA    IS
     DS0026H/883(03501)   Driver (Bipolar)             NSC    3    N/R    442 1090 SS        3015.7     3    5 P    4000    N/R    56     NA    16
     DS0026J/883          Driver (Bipolar)             NSC    3    N/R    469 0394 SS        3015.7     3    5 P    2000    N/R     9     NA    16
                                                                                                             5 P    4000    N/R     9     NA    16
                                                                                                             5 F    15999   N/R     9     NA    16
  DS0026J/883(03501)      Driver (Bipolar)             NSC    3    N/R    442    1090   SS   3015.7     3    5 P    4000    N/R    56     NA    16
* ADC00300-112            Converter (HYBRID)           ILC    1    N/R    466    1094   SS   3015.7     3    5 F    1999    N/R    10     NA    16
* ADC00302-112            Converter (HYBRID)           ILC    1    N/R    466    1094   SS   3015.7     3    5 F    1999    N/R    10     NA    16
* MSK 0032B               Amplifier (HYBRID)           MSK    1    N/R    466    1094   SS   3015.7     3    5 F    1999    N/R    10     NA    16
* ELH0032G/883B           Amplifier (HYBRID)           ELN    1    N/R    466    1094   SS   3015.7     3    5 F    1999    N/R    10     NA    16




          Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
3-2          Microcircuit Susceptibility Test Data                                                                         VZAP-95
  Part                   Microcircuit 3-2                      BSD Date Tst Tst          Tst Test       Num Num T Test         Pin Fail Tst Gen
  Number (Slash)         Description                       Mfr Cls Code Src Dte          Typ Meth       Pul Dev R Vltg         Cmb Crit Rem Rem

  CTS0032ZB              Amplifier (HYBRID)                CTS   1   N/R    466   1094   SS   3015 .7     3    5   F   1999    N/R   10    NA   16
  LH0033                 Multivibrator (Bipolar)           DCC   1   N/R    392   1186   SS   3015 .2     1    5   P   650     104   23    NA   NA
  LH0033G                Op. Amplifier (Bipolar)           NSC   1   N/R    442   0190   SS   3015 .7     3    5   F   2000    N/R   56    NA   16
  ELH0G33G/683B          Volt Follower/Buffer (HYBRID)     ELN   1   N/R    467   0195   SS   3015 .7     3    5   F   1999    N/R   10    NA   16
                                                                                                               5   F   1999    N/R   10    NA   16
  HPC003L20/883          Microprocessor (CMOS)             NSC   1   N/R    453   1191   SS   3015 .7   3      5   F   1999    N/R    7    NA   16
  HPC003U20/883          Microprocessor (CMOS)             NSC   1   N/R    453   1191   SS   3015 .7   3      5   F   1999    N/R    7    NA   16
                                                                            469   0394   SS   3015 .7   3      5   F   1999    N/R    9    NA   16
  1MS-C004               Switch (NMOS)                     INM   1   N/R    425   0487   SS   3015 .3 120      3   F   1500    333   58    NA   24
  MSK 0041B              Amplifier (N/R)                   MSK   1   N/R    462   0694   SS   3015 .7   3      5   F   1999    N/R    7    NA   17
                                                                            466   1094   SS   3015 .7   3      5   F   1999    N/R   10    NA   16
  LH0041G/883            Amplifier (Bipolar)               NSC   1   N/R    442   0990   SS   3015 .7   3      5   F   2000    N/R   56    NA   16
  ELH0041G/883B          Amplifier (Bipolar)               ELN   1   N/R    442   0990   SS   3015 .7   3      5   F   2000    N/R   56    NA   16
                                                                            466   1094   SS   3015 .7   3      5   F   1999    N/R   10    NA   16
  CTS0041ZB              Op. Amplifier (HYBRID)            CTS   1   N/R    466   1094   SS   3015 .7   3      5   F   1999    N/R   10    NA   16
  0042                   Op. Amplifier (Bipolar)           INT   1   N/R    428   N/R    GN   3015 .3   5     10   F   1100    N/R   17    NA   NA
                                                                            429   N/R    GN   3015 .3   3     10   P   600     N/R   17   169   HA
  DS0056H/883            Driver (Bipolar)                  NSC   3   N/R    442   1090   SS   3015 .7   3      5   P   4000    N/R   56    NA   16
                                                                            469   0394   SS   3015 .7   3      5   P   2000    N/R    9    NA   16
                                                                                                               5   P   4000    N/R    9    NA   16
                                                                                                               5   F   15999   N/R    9    NA   16
  MRG006-160A            Communication (Bipolar)           MIR   2   N/R    463 0894 SS       3015 .7     3    5   P   2000    N/R    7    NA   17
                                                                                                               5   F   3999    N/R    7    NA   17
  MRG006-160B            Communication (Bipolar)           MIR   2   N/R    463 0894 SS       3015 .7     3    5   P   2000    N/R    7    NA   17
                                                                                                               5   F   3999    N/R    7    NA   17
  LCB007                 Array (N/R)                       LSI   1   N/R    463 0894 SS       3015..7     3    5   F   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    NA   17
                                                                                                               5   P   1999    N/R    7    NA   17
                                                                                                               5   P   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    NA   17
                                                                                                               5   F   1999    N/R    7    MA   17
                                                                                                               5   F   1999    N/R    7    NA   17
 LH0070-0H/883           Voltage Regulator (Bipolar)       LTC   1   N/R    442   0690   SS   3015,.7     3    5   F   2000    N/R   56   MA    16
 LH0070-1H/883           Voltage Regulator (Bipolar)       LTC   1   N/R    442   0690   SS   3015,.7     3    5   F   2000    N/R   56   NA    16
 LH0070-2H               Voltage Regulator (Bipolar)       LTC   2   N/R    438   0285   GN   3015 .3    10   15   P   2000    N/R   60   NA    NA
 LH0070-2H/883           Voltage Regulator (Bipolar)       LTC   1   N/R    442   0690   SS   3015,.7     3    5   F   2000    N/R   56   NA    16
 AMP-01                  Amplifier (Bipolar)               PRE   3   9041   436   0991   SS    26         3    2   P   4000    N/R    8   NA     2
 AMP-01-009X             Amplifier (Bipolar)               PRE   3   8815   436   0391   SS    26         3   10   P   4000    N/R    8   MA     2
 ELH0101AK/883B          Op. Amplifier (HYBRID)            ELN   1   N/R    467   0195   SS   3015 .7     3    5   F   1999    N/R   10   NA    16
                                                                                                               5   F   1999    N/R   10   NA    16
  IMS-CO11               Controller (NMOS)                 INM   1   N/R    425 0887 SS       3015 .3 110      3   F   1250    336   58   NA    24
                                                                                                               3   F   1500    376   58   NA    24
                                                                                                               3   F   4000    N/R   58   NA    24
                         Controller (NMOS)                 INM   1   N/R    425 0887 SS       3015. 3 110      3   F   1250    336   58   NA    24
                                                                                                               3   F   1500    376   58   NA    24
                                                                                                               3   F   4000    N/R   58   NA    24
  REF01ADE/883B          Voltage Regulator (Bipolar)       RAY   1   N/R    442 0789 SS       3015..7    3     5   F   2000    N/R   56   NA    16
  REF01AH/883B           Voltage Regulator (Bipolar)       LTC   1   N/R    442 0789 SS       3015..7    3     5   F   2000    N/R   56   NA    16
* REF01AJ/883            Voltage Regulator (Bipolar)       PRE   2   N/R    442 0789 SS       3015..7    3     5   P   2000    N/R    7   NA    16
                                                                                                               5   F   3999    N/R    7   NA    16
* REF01AJ/883C           Voltage Regulator (Bipolar)       ANP   2   N/R    451 0789 SS       3015..7    3     5   P   2000    N/R    7   NA    16
                                                                                                               S   F   3999    N/R    7   NA    16
                                                           PRE   2   N/R    442 0789 SS       3015..7    3     5   P   2000    N/R   56   NA    16
                                                                                                               5   F   4000    N/R   56   NA    16
  REF01AJ8/883B          Voltage Regulator (Bipolar)       LTC   1   N/R    442 0789 SS       3015,.7    3     5   F   2000    N/R   56   NA    16
* REF01ARC/883B          Voltage Regulator (Bipolar)       MIP   1   N/R    462 1091 SS       3015..7    3     5   F   1999    N/R    7   NA    17
* REF01ARC/883C          Voltage Regulator (Bipolar)       ANP   2   N/R    463 1091 SS       3015..7    3     5   P   2000    N/R    7   NA    17
                                                                                                               5   F   3999    N/R    7   NA    17
                                                           PRE   2   N/R    442 0789 SS       3015..7    3     5   P   2000    N/R   56   NA    16
                                                                                                               5   F   4000    N/R   56   NA    16
 RSF01AT/883B            Voltage Regulator (Bipolar)       RAY   1   N/R    442   0789   SS   3015..7    3     5   F   2000    N/R   56   NA    16
                         Amplifier (Bipolar)               ANP   1   N/R    451   0988   SS   3015..7    3     5   F   1999    N/R    7   NA    16
* AMP-01AX/883                                             PRE   1   N/R    442   0988   SS   3015..7    3     5   F   1999    N/R    7   NA    16
                         Voltage Regulator     (Bipolar)   PRE   2   N/R    442   0789   SS   3015..7    3     5   P   2000    N/R    7   NA    16
* REF01AZ/883                                                                                                  5   F   3999    N/R    7   NA    16
                         Voltage Regulator (Bipolar)       ANP   2   N/R    451 0789 SS       3015. 7    3     5   P   2000    N/R    7   NA    16
* REF01AZ/883C                                                                                                 5   F   3999    N/R    7   NA    15
                                                           PRE   2   N/R    442 0789 SS       3015. 7    3     5   P   2000    N/R    7   HA    16
                                                                                                               5   F   3999    N/R    7   NA    16
* AMP-01BTC/883          Amplifier (Bipolar)               ANP   1   N/R    451   0988   SS   3015..7    3     5   F   1999    N/R    7   NA    16
                                                           PRE   1   N/R    442   0988   SS   3015. 7    3     5   F   1999    N/R    7   NA    16
* AMP-D18X/883           Amplifier (Bipolar)               ANP   1   N/R    451   0988   SS   3015,.7    3     5   F   1999    N/R    7   NA    16
                                                           PRE   1   N/R    442   0988   SS   3015..7    3     5   F   1999    N/R    7   NA    16
 REF01CH                 Voltage Reference (Bipolar)       LTC   1   M/R    438   0485   GN   3015.,3   10    10   F   2000    170   60   NA    NA
                                                                                                              10   F   2000    164   60   NA    NA
                                                                                                              10   F   2000    167   60   NA    NA
* CMP01J                 Comparator (Bipolar)              ANP   1   N/R    451 0990 SS       3015..7    3     5   F   1999    N/R    7   NA    16
                                                           PRE   1   N/R    442 0990 SS       3015. 7    3     5   F   1999    N/R    7   NA    16




      Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
VZAP-95                                               Microcircu.it Susceptibility Test Data                                       3-3
    Part               Microcircuit 3-3                       ESD Date Tst Tst         Tst Test      Num Num T Test     Pin Pail Tst Gen
    Number (Slash)     Description                        Mfr Cls Code Src Dte         Typ Meth      Pul Dev R Vltg     Cmb Crit Rem Rem

    REF01RC/883B       Voltage Regulator (Bipolar)        MIP   1   N/R   462 1091 SS       3015.7     3     5 F 1999    N/R       7  NA    17
    REF01RC/883C       Voltage Regulator (Bipolar)        ANP   2   N/R   451 0789 SS       3015.7     3     5 P 2000     N/R      7  NA    16
                                                                                                             5 F 3999    N/R       7  NA    16
                                                          PRE   2   N/R   442 0789 SS       3015.7     3     5 P 2000    N/R       7  NA    16
                                                                                                             5 F 3999    N/R       7  NA    16
    CMP01Z             Comparator (Bipolar)               ANP   1   N/R   451 0990 SS       3015.7     3     5 F 1999    N/R       7  NA    16
                                                          PRE   1   N/R   442 0990 SS       3015.7     3     5 F 1999    N/R       7  NA    16
    REF01Z/883C        Voltage Regulator (Bipolar)        ANP   2   N/R   451 0789 SS       3015.7     3     5 P 2000    N/R       7  NA    16
                                                                                                             5 F 3999    N/R       7  NA    16
                                                          PRE   2   N/R   442 0789 SS       3015.7     3     5 P 2000    N.'R      7  NA    16
                                                                                                             5 F 3999    N/R       7  NA    16
    DAC02310-112       Converter (HYBRID)                 ILC   1   N/R   466   1094   SS   3015.7    3      5 F 1999    N/R     10   NA   16
    DAC02310-113       Converter (HYBRID)                 ILC   1   N/R   466   1094   SS   3015.7    3      5 F 1999    N/R     10   NA    16
    DAC02311-112       Converter (HYBRID)                 ILC   1   N/R   466   1094   SS   3015.7    3      5 F 1999    N/R     10   NA    16
    DAC02311-113       Converter (HYBRID)                 ILC   1   N/R   466   1094   SS   3015.7    3      5 F 1999    N/R     10   NA   16
    MOH02 68D-50       Transceiver (Bipolar)              PLE   1   N/R   442   0289   SS   3015.7    3      5 F 2000    N/R     56   NA    16
    MOH0268D-51        Transceiver (Bipolar)              PLE   1   N/R   442   0289   SS   3015.7    3      5 F 2000    N/R     56   NA    16
    MOH0268D-52        Transceiver (Bipolar)              PLE   1   N/R   442   0289   SS   3015.7    3      5 F 2000    N/R     56   NA   16
    MOH0272C-50        Line/Bus Receiver (Bipolar)        PLE   1   N/R   442   0389   SS   3015.7    3      5 F 2000    N/R     56   NA   16
    MOH0272C-51        Line/Bus Receiver (Bipolar)        PLE   1   N/R   442   0389   SS   3015.7    3      5 F 2000    N/R     56   NA   16
    MOH0272C-52        Line/Bus Receiver (Bipolar)        PLE   1   N/R   442   0389   SS   3015.7    3      5 F 2000    N/R     56   NA   16
    AT02812T/CH        Converter (HYBRID)                 LAA   1   N/R   467   0195   SS   3015.7    3      5 F 1999    N/R     10   NA   16
    AT02812TF/CH       Converter (HYBRID)                 LAA   1   N/R   467   0195   SS   3015.7    3      5 F 1999    N/R     10   NA   16
    AT02815T/CH        Converter (HYBRID)                 LAA   1   N/R   467   0195   SS   3015.7    3      5 F 1999    N/R     10   NA   16
    AT02815TF/CH       Converter (HYBRID)                 LAA   1   N/R   467   0195   SS   3015.7    3      5 F 1999    N/R    10    NA   16
    REF02ADE/883B      Voltage Regulator (Bipolar)        RAY   1   N/R   442   0489   SS   3015.7    3      5 F 2000    N/R    56    NA   16
    REF02AH/883        Voltage Regulator (Bipolar)        LTC   1   N/R   442   0489   SS   3015.7    3      5 F 2000    N/R    56    NA   16
    REF02AJ/883        Voltage Regulator (Bipolar)        ANP   1   N/R   451   0489   SS   3015.7    3      5 F 1999    N/R      7   NA   16
                                                          PRE   1   N/R   442   0489   SS   3015.7    3      5 F 1999    N/R      7   NA   16
    REF02AJ/883B       Voltage Regulator (Bipolar)        MIP   1   N/R   456   1192   SS   3015.7    3      5 F 1999    N/R      7   NA   17
    REF02AJ8/883       Voltage Regulator (Bipolar)        LTC   1   N/R   442   0489   SS   3015.7    3      5 F 2000    N.'R   56   NA    16
    REF02ARC/383       Voltage Regulator (Bipolar)        ANP   1   N/R   451   0489   SS   3015.7    3     5 F 1999    N/R       7  NA    16
                                                          PRE   1   N/R   442   0489   SS   3015.7    3     5 F 1999     N/R      7  NA    16
    REF02AT/883B       Voltage Regulator (Bipolar)        RAY   1   N/R   442   0489   SS   3015.7    3      5 F 2000    N/R    56   NA    16
    REF02AZ/883        Voltage Regulator (Bipolar)        ANP   1   N/R   451   0489   SS   3015.7    3      5 F 1999    N/R     "7  NA    16
                                                          PRE   1   N/R   442   0489   SS   3015.7    3      5 F 1999    N/R      7  NA    16
    REF02AZ/883B       Voltage Regulator (Bipolar)        MIP   1   N/R   456   1192   SS   3015.7    3      5 F 1999    N/R      7  NA    17
    REF02CH            voltage Reference (Bipolar)        LTC   1   N/R   438   0485   GN   3015.3   10    10 F 2000     164    60   NA    NA
                                                                                                           10 F 2000     167    60   NA    NA
                                                                                                           10 F 2000     169    60   NA    NA
                                                                                                           10 F 2000     170    60   NA    NA
    REF02J/883B        Voltage Regulator (Bipolar)        MIP   1   N/R   456   1192   SS   3015.7    3     5 F 1999    N/R       7  NA    17
    PA02M/883          Op. Amplifier (HYBRID)             APO   1   N/R   466   1094   SS   3015.7    3     5 F 1999    N/R     10   NA    16
    REF02RC/883        Voltage Regulator (Bipolar)        MIP   1   N/R   456   1192   SS   3015.7    3      5 F 1999   N/R       7  NA    17
    REF02Z/883B        Voltage Regulator (Bipolar)        MIP   1   N/R   456   1192   SS   3015.7    3     5 F 1999    N/R       7  NA    17
    ADH030-II12-1      Converter (HYBRID)                 ILC   1   N/R   466   1094   SS   3015.7    3     5 F 1999    N/R     10   NA    16
    HTC-0300AM/883     Amplifier (HYBRID)                 ANA   1   N/R   466   1094   SS   3015.7    3     5 F 1999    N/R     10   NA    16
    TL031MFK3          Op. Amplifier (Bipolar/JFET)       TEX   1   N/R   462   0594   SS   3015.7    3     5 F 1999    N/R       7  NA    17
    TL031MJGB          Op. Amplifier (Bipolar/JFET)       TEX   1   N/R   462   0594   SS   301S.7    3     5 F 1999    N/R       7  NA    17
    TL032MFKB          Op. Amplifier (Bipolar/JFET)       TEX   1   N/R   462   0594   SS   3015.7    3     5 F 1999    N/R       7  NA    17
    TL032MJGB          Op. Amplifier (Bipolar/JFET)       TEX   1   N/R   462   0594   SS   3015.7    3     5 F 1999    N/R       7  NA    17
    TL034MFKB          Op. Amplifier (Bipolar/JFET)       TEX   1   N/R   462   0594   SS   3015.7    3     5 F 1999    N/R       7  NA    17
    DUDMAC04           Inverter (Bipolar)                 NSC   3   N/R   439   1089   SS   3015.7    3     1 F 9500    N/R     NA   NA    15
    TL040MFKB          Amplifier (Bipolar)                TEX   3   N/R   458   0493   SS   3015.7    3     5 P 2000    N/R       7  NA    17
                                                                                                            5 P 4000    N/R       7  NA    17
                                                                                                            5 F 15999   N/R       7  NA    17
                       Amplifier (Bipolar)                TEX   3   N/R   458 0493 SS       3015.7    3     5 P 2000    N/R       7  NA    17
                                                                                                            5 P 4000    N/R       7  NA
                                                                                                            5 F 15999   N/R       7  NA    17
    045B0              Digital IC (PMOS)                  RCA   3   N/R   029   N/R    NR    26       1     1 F 5968    N/R     NA 129     NA
    CMP04BY            Comparator (Bipolar)               ANP   1   N/R   451   0490   SS   3015.7    3     5 F 1999    N/R       7  NA    16
                                                                          463   0490   SS   301S.7    3     5 F 1999    N/R       7  NA    17
                                                          PRE   1   N/R   442   0490   SS   3015.7    3     5 F 2000    N/R     56   NA    16
* HOS-050A             Op. Amplifier (HYBRID)             ANA   1   N/R   466   1094   SS   3015.7    3     5 F 1999    N/R     10   NA    16
* TL052AMFKB           Op. Amplifier (Bipolar/JFET)       TEX   2   N/R   463   0794   SS   3015.7    3     5 P 2000    N/R       7  NA    17
                                                                                                            5 F 3999    N/R       7  NA    17
* TL052AMJGB           Op. Amplifier (Bipolar/JFET)       TEX   2   N/R   463 0794 SS       3015.7    3     5 P 2000    N/R       7  NA    17
                                                                                                            5 F 3999    N.'R      7  NA    17
* HOS-060SH            Op. Amplifier (HYBRID)             ANA   1   N/R 466 1094 SS         3015.7    3     5 F 1999    N/R     10   NA    16
* TL061                Op. Amplifier (Bipolar)            TEX   1   N/R" '469 0394 SS       3015.7    3     5 F 500     N/R       9  NA    16
                                                                                                            5 F 500     N/R       9  NA    16
                                                                                                            5 F 500     N/R       9  NA    16
"   TL061MFKB(11901)   Op.   Amplifier   (Bipolar/JFET)   TEX   1   N/R   455   0792   SS   3015.7    3     5 F 1999    N/R       7  NA    17
*   TL061MJGBU1901)    Op.   Amplifier   (Bipolar/JFET)   TEX   1   N/R   455   0792   SS   3015.7    3     5 F 1999    N/R      7   NA    17
*   TL061MLB(11901)    Op.   Amplifier   (Bipolar/JFET)   TEX   1   N/R   455   0792   SS   3015.7    3     5 F 1999    N/R       7  NA    17
*   TL061MUBU1901)     Op.   Amplifier   (Bipolar/JFET)   TEX   1   N/R   455   0792   SS   3015.7    3     5 F 1999    N/R       7  NA    17
*   TL062              Op.   Amplifier   (Bipolar)        TEX   1   N/R   469   0394   SS   3015.7    3     5 F 2000    N/R       9  NA    16
                                                                                                            5 F 2000    N/R       9  NA    16
                                                                                                            5 F 2000    N/R      9   NA    16
* TL062MFKBI11902)     Op. Amplifier (Bipolar/JFET)       TEX   2   N/R   455 0792 SS       301S.7    3     5 P 2000    N/R      7   NA    17
                                                                                                            5 F 3999    N/R      7   NA    17
* TL062MJGB(11902)     Op. Amplifier (Bipolar/JFET)       TEX   2   N/R   455 0792 SS       3015.7    3     5 P 2000    N/R      7   NA    17
                                                                                                            5 F 3999    N/R      7   NA    17
* TL062MLB(11902)      Op. Amplifier (Bipolar/JFET)       TEX   2   N/R   455 0792 SS       3015.7    3     5 P 2000    N.'R     7   NA    17
                                                                                                            5 F 3999    N/R      7   NA    17




        Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
3-4       Microcircuit Susceptibility Test Data                                                                            VZAP-95
  Part                 Microcircuit 3-4                       ESE> DateTst Tst Tst Test                Num NUJ!) T Test     Pin Fail Tst Gen
  Number (Slash)       Description                        Mfr Cls Code Src Dte Typ Meth                Pul Dev R VI tg      Cmb Crit Rem Rem

  TL062MUBU1902)       Op. Amplifier (Bipolar/JFET)       TEX   2   N/R    455 0792 SS       3015 .7     3    5 P   2000    N/R     7    NA 17
                                                                                                              5 F   3999    N/R     7    MA 17
  TL064                Op. Amplifier (Bipolar)            TEX   1 N/R      469 0394     ss   3015 .7     3    5 F           N/R     9    NA 16
                                                                                                              5 F           N/R     9    NA 16
                                                                                                              5 F           N/R     9    NA 16
  MRG064-128           Op. Amplifier (Bipolar)            MIR   2 N/R      462 0394 SS       3015 .7     3    5 P   2000    N/R     7    NA 17
                                                                                                              5 F   3999    N/R     7    NA 17
  TL064MFKB(11903)     Op. Amplifier (Bipolar/JFET)       TEX   2   N/R    455 0792 SS       3015..7     3    5 P   2000    N/R     7    NA 17
                                                                                                              5 F   3999    N/R     7    NA 17
  TL064MJB(11903)      Op. Amplifier (Bipolar/JFET)       TEX   2 N/R      455 0792 SS       3015 .7     3    5 P   2000    N/R     7    NA 17
                                                                                                              5 F   3999    N/R     7    NA 17
  TL064MKBI11903)      Op. Amplifier (Bipolar/JFET)       TEX   2   N/R    455 0792 SS       3015..7     3    5 P   2000    N/R     7    NA 17
                                                                                                              5 F   3999    N/R     7    NA 17
  VAC068A-GMB          Microprocessor (CMOS)              CVP   2   N/R    463 0593 SS       3015..7     3    5 P   2000    N/R     7    NA 17
                                                                                                              5 F   3999    N/R     7    NA 17
  VAC068A-UMB          Microprocessor (CMOS)              CYP   2   N/R    463 0593 SS       3015..7     3    5 P   2000    N/R     7    NA 17
                                                                                                              5 F   3999    N/R     7    NA 17
  SW06BQ/883           Switch (Bipolar/JFET)              ANP   1   N/R    451   1289   SS 3015..7 3          5 F   1999    N/R     7    NA 16
                                                          PRE   1   N/R    442   1289   SS 3015 .7 3          5 F   1999    N/R     7    NA 16
  SW06BRC/833          Switch (Bipolar/JFET)              ANP   1   N/R    451   1289   SS 3015 .7 3          5 F   1999    N/R     7    NA 16
                                                          PRE   1   N/R    442   1289   SS 3015 .7 3          5 F   1999    N/R     7    NA 16
  OP-07                Op. Amplifier (Bipolar)            RAY   1   N/R    437   1083   GN 3015 .3 10        12 F   2000    389   106    NA NA
                                                                           438   N/R    GN 3015 .3 10         1 F   2000    181    60    NA NA
  OP-07(13502)         Op. Amplifier (Bipolar)            LTC   1 N/R      441   N/R    SS 3015 .7 3          3 P   1500    N/R    NA   196 16
                                                                                                              3 P   1500    N/R    NA   195 16
                                                                                                              3 F   2000    N/R    NA   195 16
                                                                                                              3 F   2000    N/R    NA   196 16
                                                                           443 1288 SS       3015 .7     3    5 P   1500    N/R     7    NA 16
                                                                                                              5 F   2000    N/R     7    NA 16
                                                          NSC   1 N/R      443 1290 SS       3015 .7     3    5 P   1000    N/R     7    NA 16
                                                                                                              5 F   2000    N/R     7    NA 16
                                                          PRE   1 N/R      441 N/R      SS   3015 .6     3    3 P   600     N/R    NA    NA 16
                                                                                                              3 F   2000    N/R    NA    NA 16
                                                          RAY   1 N/R      441 N/R      SS   3015 .6     3    3 P   750     N/R    NA    NA 16
                                                                                                              3 F   2000    N/R    NA    NA 16
 072                   Op. Amplifier (Bipolar)            TEX   2 N/R      393 0984 SS        26         1    1 F   4000    N/R    NA    NA NA
 TL072                 Op. Amplifier (Bipolar)            TEX   1 N/R      469 0394 SS       3015 .7     3    5 F   2000    N/R     9    NA 16
                                                                                                              5 F   2000    N/R     9    NA 16
                                                                                                              5 F   2000    N/R     9    NA 16
* TL072I11905EPA)      Op. Amplifier (Bipolar/JFET)       TEX   1 N/R      469 0394 SS       3015..7     3    5 F   2000    N/R     9    HA 16
                                                          TEX   2 N/R      455 0792 SS       3015..7     3    5 P   2000            7    NA 17
* TL072MFKB(11905)     Op. Amplifier (Bipolar/JFET)                                                           5 F   3999    N/R     7    NA 17
                                                          TEX   2 N/R      455 0792 SS       3015 .7     3    5 P   2000    N/R     7    NA 17
* TL072MJGB(11905)     Op. Amplifier (Bipolar/JFET)                                                           5 F   3999    N/R     7    NA 17
                                                          TEX   2 N/R      455 0792 SS       3015..7     3    5 P   2000    N/R     7    NA 17
* TL072MLBU1S05)       Op. Amplifier (Bipolar/JFET)                                                           5 F   3999    N/R     7    NA 17
                                                          TEX   2 N/R      45S 0792 SS       3015..7     3    5 P   2000    N/R     7    NA 17
* TL072MUBI11905)      Op. Amplifier (Bipolar/JFET)                                                           5 F   3999    N/R     7    NA 17
                                                          TEX   1 N/R      469 0394 SS       3015.,7     3    5 F   1000    N/R     9    NA 16
* TL074                Op. Amplifier (Bipolar)                                                                5 F   1000    N/R     9    NA 16
                                                                                                              5 F   1000    N/R     9    NA 16
* TL074MFKB(11906)     Op.   Amplifier   (Bipolar/JFET)   TEX   1   N/R    455   0792   SS   3015,.7 3        5 F   1999    N/R    7     NA 17
* TL074MJB(11906)      Op.   Amplifier   (Bipolar/JFET)   TEX   1   N/R    455   0792   SS   3015 .7 3        5 F   1999    N/R    7     NA 17
* TL074MKE             Op.   Amplifier   (Bipolar)        TEX   1   N/R    463   0792   SS   3015..7 3        5 F   1999    N/R    7     NA 17
  OP-07A               Op.   Amplifier   (Bipolar)        LTC   1   N/R    438   N/R    GN   3015..3 10       2 F   2000    181   60     NA NA
                                                          PRE   3   9143   436   0492   SS    26      3       1 P   4000    N/R    8     NA  2
 OP-07AI13501)         Op. Amplifier (Bipolar)            LTC   2   8908   436   0889   SS    26      3       5 F   4000    163    8     NA  2
                                                          LTC   2   8909   436   1189   SS    26      3       5 F   4000     94    8     NA  2
                                                          LTC   1   N/R    441   N/R    SS   3015..7 3        3 P   1500    N/R   NA    195 16
                                                                                                              3 P   1500    N/R   NA    196 16
                                                                                                              3 F   2000    N/R   NA    195 16
                                                                                                              3 F   2000    N/R   NA    196 16
                                                                           443 1288 SS 3015 .7           3    5 P   1500    N/R    7     NA 16
                                                                                                              5 F   2000    N/R    7     NA 16
                                                          PRE   3 8813 436 0989 SS            26         3    5 P   4000    N/R    8     NA  2
                                                          PRE   3 9137 436 0392 SS            26         3    1 P   4000    N/R    8     NA  2
                                                          PRE   1 N/R 441 N/R SS             3015 .7     3    3 P   600     N/R   NA     NA 16
                                                                                                              3 F   2000    N/R   NA     NA 16
                                                                           443 1289 SS       3015 .7     3    5 P   800     N/R    7     NA 16
                                                                                                              5 F   1000    N/R    7     NA 16
                                                          RAY   1 N/S      441 N/R      SS 3015.,7       3    3 P   750     N/R   NA     NA 16
                                                                                                              3 F   2000    N/R   NA     NA 16
                                                                           443 1289 SS       3015..7     3    5 P   750     N/R    7     NA 16
                                                                                                              5 F   1000    N/R    7     HA 16
 OP-07AU3501SPA)       Op.   Amplifier   (Bipolar)        PRE   2   9015   436   0391   SS    26      3       5 F   4000     93    8     NA  2
 OP-07AH/8e3(13501)    Op.   Amplifier   (Bipolar)        LTC   1   N/R    442   0189   SS   3015..7 3        5 F   2000    N/R   56     NA 16
 OP-07AH8              Op.   Amplifier   (Bipolar)        LTC   1   N/R    438   1286   GN        .
                                                                                             3015. 3 10       1 F   2000    193   60     HA NA
 OP-07AJ8/863(13501)   Op.   Amplifier   (Bipolar)        LTC   1   N/R    442   0189   SS   3015..7 3        5 F   2000    N/R   56     NA 16
 OP-07ARC              Op.   Amplifier   (Bipolar)        ANP   1   N/R    451   0189   SS   3015.,7 3        5 F   1999    N/R    7     NA 16
                                                          PRE   1   N/R    451   0189   SS   3015.,7 3        5 F   1999    N/R    7     NA 16
 CP-07H                Op.   Amplifier   (Bipolar)        LTC   1   N/R    438   0285   GN   3015 .3 10       3 F   2000    181   60     NA NA
 OP-07H/883113502)     Op.   Amplifier   (Bipolar)        LTC   1   N/R    442   0189   SS   3015..7 3        5 F   2000    N/R   56     NA 16
 OP-07J8/883(13502)    Op.   Amplifier   (Bipolar)        LTC   1   N/R    442   0189   SS   3015..7 3        5 F   2000    N/R   56     NA 16
 PA07M/883             Op.   Amplifier   (HYBRID)         APO   1   N/R    466   1094   SS   3015,.7 3        5 F   1999    N/R   10     NA 16




      Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 * 315-337-0900
VZAP-95                                          Microcircuit Susceptibility Test Data                                       3-5
  Part               Microcircuit 3-5                   ESD Date Tst Tst          Tst Test       Num Num T Test    P i n F a i l T s t Gen
  Number (Slash)     Description                    Mfr Cls Code Src Dte          Typ Meth       Pul Dev R Vltg    Cinb C r i t Rem Rem

* OP-07RCU3502)      Op. Amplifier (Bipolar)        ANP   1 N/R      451   0189   SS   3015.7      3    5 F 1999    N/R      7  NA 16
                                                    PRE   1 N/R      442   0189   SS   3015.7      3    5 F 1999    N/R      7  NA 16
  DAC-08(11301)      Converter (Bipolar)            PRE   1 N/R      436   1186   SS   3015.7      3    1 F 2000    164      8 NA    2
                                                                     441   N/R    SS   3015.7      3    3 P 1400    N/R    NA   NA 16
                                                                                                        3 F 2000    N/R    NA   NA 16
                                                                     443 1289 SS       3015.7      3    5 P 1400    N/R      7  NA 16
                                                                                                        5 F 2000    N/S      7  NA 16
                                                    RAY   1 N/R      441 N/R      SS   3015.7     3     3 P 300     N/R    NA   NA 16
                                                                                                        3 F 2000    N/R    NA   NA 16
                                                                     443 1283 SS       3015.7     3     5 P 300     N/R      7  NA 16
                                                                                                        5 F 400     N/R      7 NA - 16
  ADC0800            Converter   (Bipolar)          NSC   1 N/R      421   0184   SS   3015.2' 3        1 F 500     415    NA   NA NA
  ADC0808CJ          Converter   (Bipolar)          NSC   1 N/R      392   1186   SS   3015.2  1        5 F 1050    109    23   NA NA
  ADC0811            Converter   (Bipolar)          NSC   2 8436     421   0184   SS   3015.2 11        1 F 2500    371    NA   NA NA
  ADC0819            Converter   (Bipolar)          NSC   2 N/R      421   0184   SS   3015.2 18        1 F 3500    408    NA   NA NA
                                                                     422   0184   SS   3015.2  3        1 F 500     407    NA 206 NA
  ADC0820            Converter (Bipolar)            NSC   1 N/R      421   0184   SS   3015.2  6        1 F 1200    417    NA   NA NA
                                                                     422   0184   SS   3015.2  2        1 F 350     417    NA 206 NA
  DAC0830            Converter (Bipolar)            NSC   1 N/R      421   0184   SS   3015.2  5       1 F 900      379   NA   NA NA
  ADC0838            Converter (Bipolar)            NSC   1 N/R      421   0184   SS   3015.2  4       1 F 700      374   NA   NA NA
                                                                                                       1 F 3500     N/R    NA  NA NA
  HPC083XXX/L/883    Microprocessor (CMOS)          NSC   1 N/R      453   1191   SS   3015.7     3     5 F 1999    N/R     7  NA 16
  HPC083XXX/U/883    Microprocessor (CMOS)          NSC   1 N/R      453   1191   SS   3015.7     3    5 F 1999     N/R     7   NA 16
                                                                     469   0394   SS   3015.7     3    5 F 1999    N/R      9 NA 16
  TL084              Converter (Bipolar)            TEX   1 N/R      392   1086   SS   3015.2     1    5 F 2000     112    23  NA NA
                                                                     393   0183   SS   3015.2     1    1 F 2500    N/R    NA   NA NA
  DAC-08A(11302)     Converter (Bipolar)            PRE   1 N/R      441   N/R    SS   3015.7     3    3 P 1400    N/R    NA   NA 16
                                                                                                       3 F 2000    N/R    NA   NA 16
                                                                     443 1289 SS       3015.7     3    5 P 1400    N/R      7  NA 16
                                                                                                       5 F 2000    N/R      7  NA 16
                                                    RAY   1 N/R      441 N/R      SS   3015.7     3    3 P 300     N/R    NA   NA 16
                                                                                                       3 F 2000     N/R   NA    NA 16
                                                                     443 1283 SS       3015.7     3    5 P 300     N/R      7  NA 16
                                                                                                       5 F 400     N/R      7  NA 16
* MUX-03AO.          Switch (Bipolar/JFET)          ANP   1   N/R    451   1288   SS   3015.7     3    5 F 1999    N/R      7  NA 16
                                                    PRE   1   N/R    442   1288   SS   3015.7     3    5 F 1999    N/R      7  NA 16
* MUX-08BHYE         Switch (Bipolar/JFET)          PRE   1   8847   446   0789   SS   3015.6     3    2 F 500     N/R    NA   NA 14
                     Switch (Bipolar/JFET)          ANP   1   N/R    451   1288   SS   3015.7     3    5 F 1999    N/R      7  NA 16
* MUX-08BQ                                          PRE   1   N/R    442   1288   SS   3015.7     3    5 F 1999    N/R      7  NA IS
                     Switch (Bipolar/JFET)          ANP   1   N/R    451   1288   SS   3015.7     3    5 F 199S    N/R      7  NA 16
* NUX-08BRC                                         PRE   1   N/R    442   1288   SS   3015.7     3    5 F 1999    N/R      7  NA 16
                     Arithmetic (CMOS)              LDI   2   N/R    460   0393   SS   3015.7     3    5 P 2000    N/R      7  NA 17
* LMU08DMB45                                                                                           5 F 3999    N/R      7  NA 17
                     Arithmetic (CMOS)              LDI   2 N/R      458 0393 SS       3015.7     3    5 P 2000    N/S      7  NA 17
* LMU08DMB50                                                                                           5 F 3999    N/R      7  NA 17
                     Arithmetic (CMOS)              LDI   2 N/R      460 0393 SS       3015.7     3    5 P 2000    N/R      7  NA 17
* LMU08DMB60                                                                                           5 F 3999    N/R      7  NA 17
                     Arithmetic (CMOS)              LDI   2 N/R      458 0393 SS       3015.7     3    5 P 2000    N/R      7  NA 17
* LMU08DMB7 0                                                                                          5 F 3999    N/R      7  NA 17
                     Arithmetic (CMOS)              LDI   2 N/R      460 0393 SS       3015.7     3    5 P 2000    N/R      7  NA 17
* LMU08KMB45                                                                                           5 F 3999    N/R      7  NA 17
                     Arithmetic (CMOS)              LDI   2 N/R      458 0393 SS       3015.7     3    5 P 2000    N/R      7  NA 17
* LMU08KMB50                                                                                           5 F 3999    N/R      7  NA 17
* LMU08KMB60         Arithmetic (CMOS)              LDI   2   N/R    460 0393 SS       3015.7     3    5 P 2000    N/R      7  NA 17
                                                                                                       5 F 3999    N/R      7  NA 17
* LMU08KMB70         Arithmetic (CMOS)              LDI   2 N/R      458 0393 SS       3015.7     3    5 P 2000    N/R      7  NA 17
                                                                                                       5 F 3999    N/R      7  NA 17
* PA08M/883          Amplifier (Bipolar)            APM   1   N/R    460   0991   SS   3015.7     3    5 F 1999    N/R      7  NA 17
                                                    APO   1   N/R    466   1094   SS   3015.7     3    5 F 1999    N/R    10   NA IS
* DAC08RC            Converter (Bipolar)            ANP   1   N/R    451   0990   SS   3015.7     3    5 F 1999    N/R      7  NA 16
                                                    PRE   1   N/R    442   0990   SS   3015.7     3    5 F 1999    N/R      7  NA 16
* LMU08UDMB50        Arithmetic (CMOS)              LDI   2   N/R    458   0393   SS   3015.7     3    5 P 2000    N/R      7  NA 17
                                                                                                       5 F 3999    N/R      7  NA 17
* LMU08UDMB70        Arithmetic (CMOS)              LDI   2 N/R      458 0393 SS       3015.7     3    5 P 2000    N/R      7  NA 17
                                                                                                       5 F 3999    N/R      7  NA 17
* LMU08UKMBS0        Arithmetic (CMOS)              LDI   2 N/R      458 0393 SS       3015.7     3    5 P 2000    N/R      7  NA 17
                                                                                                       5 F 3999    N/R      7  NA 17
* LMU08UKMB70        Arithmetic (CMOS)              LDI   2 N/R      458 0393 SS       3015.7     3    5 P 2000    N/R      7  NA 17
                                                                                                       5 F 3999    N/R      7  NA 17
  H09128             Processing Unit (Bipolar)      HON   1   8928   436   8928   SS    26        3    2 F 1000    163      8 NA    2
* OP-09AY/883        Op. Amplifier (Bipolar)        ANP   1   N/R    460   0993   SS   3015.7     3    5 F 1999    N/R      7  NA 17
* PA09M/883          Op. Amplifier (HYBRID)         APO   1   N/R    467   0195   SS   3015.7     3    5 F 1999    N/R    10   NA 16
* HI1-0222/883       Switch (Bipolar)               HAR   1   N/R    462   0394   SS   3015.7     3    5 F 1999    N/R      7  NA 17
  HD1-15530-8        Encoder (Bipolar)              HAR   1   N/R    442   1087   SS   3015.7     3    5 F 1999    N/R    56   NA 16
                                                                                                       5 F 2000    N/R    56   NA 16
* HD1-15531/883      Encoder (Bipolar)              HAR   2 N/R      456 0992 SS       3015.7     3    5 P 2000    N/R     7   NA 17
                                                                                                       5 F 399S    N/R      7  NA 17
* HD1-15531B/883     Encoder (Bipolar)              HAR   2   N/R    456 0992 SS       3015.7     3    5 P 2000    N/R      7  NA 17
                                                                                                       5 F 3999    N/R      7  NA 17
  HS1-1840RH         Switch (Bipolar)               HAR   1   N/R    442   0190   SS   3015.7     3    5 F 2000    N/R    56   NA 16
* HI1-201/883        Switch (CMOS)                  HAR   1   N/R    457   1192   SS   3015.7     3    5 F 1999    N/R      7 NA 17
* H11-201/883B       Switch (CMOS)                  MIP   1   N/R    457   1192   SS   3015.7     3    5 F 1999    N/R      7  NA 17
  HI1-201HS/883      Switch (CMOS)                  HAR   1   N/R    442   1189   SS   3015.7     3    5 F 2000    N/R    56   NA 16
  HA1-2400/883       Op. Amplifier (Bipolar)        HAR   1   N/R    442   0789   SS   3 015.7    3    5 F 2000    N/R    56   NA 16




       Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
              SECTION 4:
DISCRETE SEMICONDUCTOR SUSCEPTIBILITY
              TEST DATA
                                          DATA COLUMN DEFINITIONS
(1)               (2)                     (3)   (4)   (5)    (6) (7) (8) (9)    (10)   (11)   (12) (13)   (14)   (15)   (16)   (17)
Part              Section Name and Page         ESD   Date   Tst Tst Tat Tst    Num    Num    T    Tst    Pin    Pail   Tat    Gen
Number (Slash)    Description             Mfr   Cls   Code   Src Dte Typ Heth   Pul    Dev    R    Vltg   Comb   Crit   Rem    Rem




      (1)        Part Number (Slash).       The part number of the device and slash number if available in
                 parenthesis.
               "*" prefix indicates part is not included in VZAP-91.
               "-" prefix indicates part has changed classification since VZAP-91.
      (2)  Description. Basic function of the device. Includes 'Technology" for Microcircuits in
           parenthesis.
      (3)  Mfr. Manufacturer of the device (see Appendix C).
      (4)  ESD Cls. The classification per MIL-STD-1686B and MIL-STD-883 based on the best available
           data.
      (5)  Date Code. Date code as it appeared on the device.
      (6)  Test Src. Source code - identifies the data source (see Section 6).
      (7)  Tst Die. Date (month and year) the test was performed.
      (8)  Test Type. SS = Step Stress, i.e., the device was stressed in incremental voltages and tested for
           failure between each. GN = Go/No-Go, i.e., one voltage level only applied to the device and
           then tested for failure.
      (9)  Test Method. If MIL-STD-883 Method 3015 was used. The version of 3015.X will appear.
           Otherwise a reference to the resistance (in ohms) and the capacitance in (farads) of the discharge
           circuit will be provided to the table in Appendix E.
      (10) Num Puis. The total number of pulses applied to the device at the voltage (field no. 13) before
           failure (if result = fail) or before testing for failure (if result = pass).
      (11) Num Dev. The number of devices which were tested to the same stresses results (i.e., all other
           fields the same).
      (12) T/R. Test result, i.e., whether the device passed = P or failed = F testing at the given test
           conditions.
      (13) Test Volt. The voltage applied to the device (if the device was step-stressed and it failed during
           stepping, the failure voltage is given).
      (14) Pin Comb. The pin combination tested: function, pin number, and polarity (if known) (see
           Appendix F). N/R = Not Reported
      (15) Fail Crit. Criteria used to detect device failure (see Appendix B). NA = Not Applicable.
      (16) Tst Rem. Any comment which clarifies the data with respect to the specific test record (see
           Appendix C). NA = Not Applicable.
      (17) Gen Rem. Any comment which clarifies the test procedures or results (see Appendix D). NA =
           Not Applicable.
VZAP-95                                            Discrete Susceptibility Test Data                                    4-1
  Part                 Discrete 4-1                        ESD Date Tst Tst Tst Test               Num Num T Test      Pin Fail Tst Gen
  Number (Slash)       Description                     Mfr Cls Code Src Dte Typ Meth               Pul Dev R Vltg      Cmb Crit Rem Rem
  VP0109N2             Transistor Field E£f,Junction   SUP   1 N/R      396 0282 SS        29        1     3 F 100      139    NA     NA    NA
                                                                                                          3 F 100       140    NA     NA    NA
  04-92                Transistor,Power Low            NSC   2   N/R    421   0184   SS   3015.2    10     1 P 2000     N/R    NA     NA    NA
  UV-040-BG            Optoelectronic Devic,Sensor     EGG   3   8829   436   0489   SS    26        3     2 P 4000     N/R      8     NA    2
  06-92                Transistor,Multiple             NSC   2   N/R    421   0184   SS   3015.2    10     1 P 2000     N/R    NA      NA   NA
  HLMP-K100            Optoelectronic Devic,Emitter    HEW   3   N/R    403   0985   SS   3015.1     5   20 P 15000     433    NA    177    NA
  10070019-106         Diode,Rectifier                 UDT   3   N/R    436   1087   SS    26        3    4 P 4000      N/R     8     NA     2
  FLV104               Optoelectronic Devic,Emitter    ITT   3   N/R    386   N/R    NR    26        1     1 F 4400      76   107    130    NA
                                                                                                           1 F 17160     56   107    130    NA
  SP10962              Transistor,Power High           TEX   3 N/R      402 0887 SS       3015.4     5     6 F 6000     N/R    73     NA    NA
  ENI10A               Transistor, Mi crowave/RF       MOT   3 N/R      413 1087 SS        26        5    5 F 10000      60    26     NA    NA
                                                                                                           5 P 16000     60    26     NA    NA
                                                                                                           5 P 16000     60    26     NA    NA
                                                                                                          5 F 16000      60    26     NA    NA
                                                                                                           5 F 16000     60    26     NA    NA
  MV-10B               Optoelectronic Devic,Emitter    ITT   3 N/R      386 N/R      NR    26        1     1 F 8320      76   107    130    NA
                                                                                                           1 F 31950     56   107    130    NA
  MD-1151              Diode,Special Function          ANZ   1 N/R      392 1186 SS       3015.2     1    3 F 2000      316    23     NA    NA
                                                                                                          3 F 2750      345    23     NA    NA
  MTM1224              Transistor,Switching            MOT   1 N/R      396 1081 SS        29        1     4 F 500      139    NA     NA    NA
                                                                                                          i F 500       140    NA     NA    NA
  13-92                Transistor,Power Low            NSC   2 N/R      421 0184 SS 3015.2          10    1 P 2000      N/R    NA     NA    NA
  SPF1303              Transistor Field Eff,MOS        MOT   2 N/R      393 1183 SS  26              1     1 F 2500     N/R    NA     NA    NA
  EN114B               Transistor, Microwave/RF                                                     15    4 P 16000      60    26     NA    HA
                                                       MOT   N N/R      413 1087 SS  26                                               NA    NA
                                                                                                          4 P 16000      60    26
                                                                                                          4 P 16000      60    26     NA    NA
                                                                                                          4 P 16000      60    26     NA    NA
                       Transistor Field Eff,Hexagon    IRC   1 8816 436 0389 SS            26       3    10 F 1000      137     8     NA     2
                                                       IRC   1 8920 436 1089 SS            26       3    10 F 2000      137     8     NA     2
  FLV152               Optoelectronic Devic,Emitter    ITT   3 N/R 386 N/R NR              26       1     1 F 5310       76   107    130    NA
                                                                                                          1 F 20580      56   107    130    NA
  SCBA15FF             Diode,Rectifier                 SEM   3 8913     436   0689   SS  26      3        1 P 4000     N/S      8     NA     2
  MTM15N05             Transistor Field Eff,MOS        MOT   1 N/R      400   0188   SS 3 015.4 68       10 F 680      N/R      2    132    10
  MTP15N06             Transistor Field Eff,MOS        MOT   1 N/R      400   0188   SS 3015.4 54        10 F 540      N/R      2    132    10
  HLMP-1700            Optoelectronic Devic,Emitter    HEW   1 N/R      403   0985   SS 3015.1   5       20 F 100       433    NA    177    NA
                                                                                                         20 F 1200      134    NA    177    NA
  HLMP-1719            Optoelectronic Devic,Emitter    HEW   1 N/R      403 0985 SS       3015.1    5    20 F 100      433     NA    177    NA
  M19500/469-OK469)    Diode,Rectifier                 MSM   N N/R      468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 P 16000    N/R     10     NA    16
                                                       SEN   3 N/R      468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 F 15999    N/R     10     NA    16
* M19500/469-02I469)   Diode,Rectifier                 MSM   N   N/R    468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 P 16000    N/R     10     NA    16
                                                       SEN   3 N/R      468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 F 15999    N/R     10     NA    16
* M19500/469-03(469)   Diode,Rectifier                 MSM   N   N/R    468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 P 16000    N/R     10     NA    16
                                                       SEN   3 N/R      468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 F 15999    N/R     10     NA    16
* M19500/469-04(469)   Diode,Rectifier                 SEN   3 N/R      468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 F 15999    N/R     10     NA    16
* M19500/469-05(469)   Diode,Rectifier                 SEN   3 N/R      468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 F 15999    N/R     10     NA    16
* M19500/483-0K483)    Diode,Rectifier                 MSM   N   N/R    468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 P 16000    N/R     10     NA    16
                                                                                                          5 P 16000    N/R     10     NA    16
                                                       SEM   N   N/R    468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 P 16000    N/R     10     NA    16
                                                       SEN   3 N/R      468 0794 SS 3015.7          3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 F 15999    N/R     10     NA    16
 M19500/483-021483)    Diode,Rectifier                 MSM   N   N/R    468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     MA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 P 16000    N/R     10     NA    16
                                                                                                          5 P 16000    N/R     10     NA    16
                                                       SEM N     N/R    468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 P 16000    N/R     10     NA    16
                                                       SEN   3   N/R    468 0794 SS       3015.7    3     5 P 2000     N/R     10     NA    16
                                                                                                          5 P 4000     N/R     10     NA    16
                                                                                                          5 F 15999    N/R     10     NA    16




      Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
4-2         Discrete Susceptibility Test Data                                                                  VZAP-95
  Part                  Discrete 4-2                ESD Date Tst Tst        Tst Test      Num Num T Test         Pin P a i l Tst Gen
  Number (Slash)        Description             Mfr els Code Src Dte        Typ Meth      Pul Dev R Vltg         Cinb C r i t Rem Rem

  M19500/483-03 1483)   Diode/Rectifier         MSM   N   N/R   468 0794 SS     3015 .7     3   5   P   2000     N/R    10    NA   16
                                                                                                5   P   4000     N/R    10    NA   16
                                                                                                5   P   16000    N/R    10    NA   16
                                                SEM   N   N/R   468 0794 SS     3015 .7     3   5   P   2000     N/R    10    NA   16
                                                                                                5   P   4000     N/R    10    NA   16
                                                                                                5   P   16000    N/R    10    NA   16
                                                SEN   3 N/R     468 0794 SS     3015 .7     3   5   P   2000     N/R    10    NA   16
                                                                                                5   P   4000     N/R    10    NA   16
                                                                                                5   P   15999    N/R    10    NA   16
  1N1095                Diode,Rectifier         TEX   3 N/R     02 9 N/R NR      26         1   1 F     12868    N/R    NA   129   NA
- 1N1184(297)           Diode,Rectifier         MSM   N N/R     468 0794 SS     3015 .7     3   5   P   2000     N/R    10    NA   16
                                                                                                5   P   4000     N/R    10    NA   16
                                                                                                5   P   16000    N/R    10    NA   16
  1N1184R(297)          Diode,Rectifier         MSM   N   N/R   468 0794 SS     3015..7     3   5   P   2000     N/R    10    NA   16
                                                                                                5   P   4000     N/R    10    NA   16
                                                                                                5   P   16000    N/R    10    NA   16
  1N1186(297)           Diode,Rectifier         MSM   N   N/R   468 0794 SS     3015 .7     3   5   P   2000     N/R    10    NA   16
                                                                                                5   P   4000     N/R    10    NA   16
                                                                                                5   P   16000    N/R    10    NA   16
  1N1188(297)           Diode,Rectifier         MSM   N   N/R   468 0794 SS     3015 .7     3   5   P   2000     N/R    10    NA   16
                                                                                                5   P   4000     N/R    10    NA   16
                                                                                                5   P   16000    N/R    10    NA   16
  1N1190(297)           Diode,Rectifier         MSM   N   N/R   468 0794 SS     3015 .7     3   5   P   2000     N/R    10    NA   16
                                                                                                5   P   4000     N/R    10    NA   16
                                                                                                5   P   16000    N/R    10    NA   16
  1N1202A               Diode,Rectifier         BEN   N   N/R   029   N/R  NR    26        1    1   P   90397    N/R NA      129   NA
                                                N/R   3   N/R   029   N/R  NR    26        1    1   F   55813    N/R NA      128   NA
                                                                030   N/R  NR    26        1    1   F   10000    N/R 108      NA   NA
  1N1204A               Diode,Rectifier         N/R N     N/R   232   N/R  NR     3        1    1   F   108139   N/R NA      124   NA
  1N1206                Diode,Rect i fier       SVN N     N/R   029   N/R  NR    26        1    1   F   92874    N/R NA      129   NA
  1N1733A               Diode,Rectifier         TRW N     N/R   029   N/R  NR    26        1    1   F   32958    N/R NA      129   NA
  1N202A<260>           Diode,Rectifier         MSM N     N/R   468   0794 SS   3015..7    3    5   P   2000     N/R    10   NA    16
                                                                                                5   P   4000     N/R    10   NA    16
                                                                                                5   P   16000    N/R    10   NA    16
* 1II202AR(260)         Diode,Rectifier         MSM   N   N/R   468 0794 SS     3015..7    3    5   P   2000     N/R    10   HA    16
                                                                                                5   P   4000     N/R    10   NA    16
                                                                                                5   P   16000    N/R    10   NA    16
* 1N204A(260)           Diode,Rectifier         MSM   N   N/R   468 0794 SS     3015..7    3    5   P   2000     N/R    10   NA    16
                                                                                                5   P   4000     N/R    10   NA    16
                                                                                                5   P   16000    N/R    10   NA    16
* 1N204ARI260)          Diode,Rectifier         MSM   N   N/R   468 0794 SS     3015..7    3    5   P   2000     N/R    10   NA    16
                                                                                                5   P   4000     N/R    10   NA    16
                                                                                                5   P   16000    N/R    10   NA    16
* 1H206AI260)           Diode,Rectifier         MSM   N   N/R   468 0794 SS     3015,.7    3    5   P   2000     N/R    10   NA    16
                                                                                                5   P   4000     N/R    10   NA    16
                                                                                                5   P   16000    N/R    10   NA    16
* 1N206ARI260)          Diode,Rectifier         MSM   N   N/R   468 0794 SS     3015..7    3    5   P   2000     N/R    10   NA    16
                                                                                                5   P   4000     N/R    10   NA    16
                                                                                                5   P   16000    N/R    10   NA    16
 1N2158                 Diode,Rectifier         SYN N     N/R   029   N/R NR   26          1    1   F   146346   N/R    NA   129   NA
 1N21B                  Diode, Microwave        ALP 1     N/R   029   N/R NR   26          1    1   F   1193     N/R    NA   129   NA
 1N21C                  Diode,Microwave         ALP 1     N/R   029   N/R NR   26          1    1   F   1550     N/R    NA   129   NA
 1N21E                  Diode, Microwave        ALP 1     N/R   029   N/R NR   26          1    1   F   1579     N/R    NA   129   NA
 1N21F                  Diode, Microwave        ALP 1     N/R   029   N/R NR   26          1    1   F   1334     N/R    NA   129   NA
 1N21WE                 Diode, Microwave        ALP 1     N/R   029   N/R NR   26          1    1   F   1266     N/R    NA   129   NA
                                                MAC 1     N/R   394   0485 SS  26          1    1   F   400      N/R   101   172   37
 1N23B                  Diode,Microwave         ALP 1     N/R   029   N/R NR   26          1    1   F   1193     N/R    NA   129   NA
 1N23D                  Diode,Microwave         ALP 1     N/R   029   N/R NR   26          1    1   F   1033     N/R    NA   129   NA
 1N23E                  Diode,Microwave         ALP 1     N/R   029   N/R NR   26          1    1   F   1550     N/R    NA   129   NA
 1N23F                  Diode,Microwave         ALP 1     N/R   029   N/R NR   26          1    1   F   943      N/R    NA   129   NA
 1N23G                  Diode, Microwave        ALP 1     N/R   029   N/R NR   26          1    1   F   870      N/R    NA   129   NA
 1N23RF                 Diode,Microwave         ALP 1     N/R   029   N/R NR   26          1    1   F   915      N/R    NA   129   NA
 1N23WE                 Diode, Microwave        ALP 1     N/R   029   N/R NR   26          1    1   F   508      N/R    NA   129   NA
                                                N/R 1     N/R   026   0178 SS  16          1    4   F   56        76    95   202   NA
  1N25                  Diode,Microwave         ALP 3     N/R   029   N/R NR   26          1    1   F   4812     N/R    NA   129   NA
  1N2S1                 Diode,Germanium         ALP 2     N/R   029   N/R NR   26          1    1   F   2233     N/R    NA   129   NA
* 1N25K200)             Diode,Germanium         MSM N     N/R   468   0794 SS 3015. 7      3    5 P     2000     N/R   10    NA    16
                                                                                                5 P     4000     N/R   10    NA    16
                                                                                                5 P     16000    N/R   10    NA    16
 1H25A                  Diode, Microwave        ALP   2 N/R     029 N/R NR       26        1    1 F     3402     N/R   NA    129   NA
 1N2701200)             Diode,Germanium         BKS   3 N/R     468 0794 SS     3015..7    3    5 P     2000     N/R   10    NA    16
                                                                                                5 P     4000     N/R   10    HA    16
                                                                                                5 F     15999    N/R   10    NA    16
  1N2701                Diode,Rectifier         ITT   2 N/R     029 N/R NR       26        1    1 F     2624     N/R   NA    129   NA
* 1N276(192)            Diode,Switching         BKS   3 N/R     468 0794 SS     3015. 7    3    5 P     2000     N/R   10    NA    16
                                                                                                5 P     4000     N/R   10    NA    16
                                                                                                5 F     15999    N/R   10    NA    16
  1N277                 Diode,Germanium         N/R   1 N/R     029 N/R NR   26            1    1 F     1792     N/R   NA    129   NA
» 1K277(201)            Diode,Germanium         BKS   3 N/R     468 0794 SS 3015..7        3    5 P     2000     N/R   10    NA    16
                                                                                                5 P     4000     N/R   10    NA    16
                                                                                                5 F     15999    N/R   10    NA    16
 1N2804B                Diode,Zener             N/R   3   N/R   030 N/R NR       26        1    1 P     15300    N/R 108     NA    NA
 1N2B04BU14)            Diode,Zener             MSM   N   N/R   468 0794 SS     3015. 7    3    5 P     2000     N/R   10    NA    16
                                                                                                5 P     4000     N/R   10    NA    16
                                                                                                5 P     16000    N/R   10    NA    16




      Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
VZAP-95                                Discrete Susceptibility Test Data                                          4-3
  Part               Discrete 4-3              ESD Date Tst Tst         Tst Test       Num Num T Test            Pin fail Tst Gen
  Number (Slash)     Description           Mfr Cls Code Src Dte         Typ Meth       Pul Dev R Vltg            Cmb Crit Rem Rem
  1N2804RB(114)      Diode,2ener           MSM   N   N/R   468 0794 SS       3015 .7     3     5   P    2000     N/R 10    NA 16
                                                                                               5   P    4000     N/R 10    NA 16
                                                                                               5   P    16000    N/R 10    NA 16
  1N2808B(114)       Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7     3     5    P   2000     N/R 10    NA 16
                                                                                               5    P   4000      N/R 10   NA 16
                                                                                               5   P    16000     N/R 10   NA 16
  1N2808RB(114)      Diode,Zener           MSM   N   N/R   468 0794 SS       3015 .7     3     5   P    2000      N/R 10   NA 16
                                                                                               5    P   4000      N/R 10   NA 16
                                                                                               5   P    16000    N/R  10   NA 16
  1N2813B            Diode,Zener          N/R    3   N/R   030 N/R NR         26        1      1   P    15300    N/R 108   NA NA
  1N2813BU14)        Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                               5   P    16000    N/R 10    NA 16
* 1N2813RB(114)      Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
* 1N2814BU14)        Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7     3     5   P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R  10   NA 16
                                                                                              5    P    16000    N/R 10    NA 16
* 1N2814RB(I14)      Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
  1N2816B            Diode,Zener          N/R    3   N/R   030 N/R NR         26        1     1    P    15300    N/R 108   NA NA
* 1N2816B(114)       Diode,2ener          MSM    N   N/R   468 0794 SS       3015 .7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    H/R 10    NA 16
  1N2816RBU14)       Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
  1H2818             Diode,Zener          MOT    N   N/R   400 0188 SS       3015 .4 400     10    P    43000      54  2 132 10
* 1N2818B{114)       Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7   3      5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
  1N2818RB(114)      Diode,Zener          MSM    N   N/R   4 68 0794 SS      3015 .7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R  10   NA 16
                                                                                              5    P    16000    N/R 10    NA 16
  1N2820BU14)        Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7    3     S    P    2000     N/R 10 . NA 16
                                                                                                                         ,
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
  1N2820RB(114)      Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
  1N2829BU14)        Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R  10   NA 16
                                                                                              5    P    16000    N/R 10    NA 16
  1N2829RB(114)      Diode,Zener          MSM    N   N/R   468 0794 SS       3015 .7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
  1N2831             Diode,Zener          MOT    N   N/R   400 0188 SS       3015 .4 400     10    P    43000      54  2 132 10
  1N2831B{114)       Diode,Zener          MSM    N   N/R   468 0794 SS       3015..7   3      5    P    2000     N/R  10   NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
* 1N2831RB(114)      Diode,Zener          MSM    N   N/R   468 0794 SS       3015..7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
  1K2837             Diode,Zener          MOT    N   N/R   400 0188 SS       3015. 4 400     10    P    43000      54  2 132 10
  1N2838B(114)       Diode,Zener          MSM    N   N/R   468 0794 SS       3015..7   3      5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
* 1N2838RBU14)       Diode,Zener          MSM    N   N/R   466 0794 SS       3015..7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R  10   NA 16
* 1N2840B(114)       Diode,Zener          MSM    N   N/R   468 0794 SS       3015. 7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
* 1N2840RBU14)       Diode,Zener          MSM    N   N/R   468 0794 SS       3015. 7    3     5    P    2000     N/H 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
 1N2846              Diode,Zener          MOT    N   N/R   400 1287 SS       3015. 4 400     10    F    40000      54  1 132 10
 1N2846B(114)        Diode,Zener          MSM    N   N/R   468 0794 SS       3015..7   3      5    P    2000     N/R  10   NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
 1N2846RB(114)       Diode,Zener          MSM    N   N/R   468 0794 SS       3015.,7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R  10   NA 16
                                                                                              5    P    16000    N/R 10    NA 16
 1N2892              Diode,Zener          MOT    N   N/R   400   0188   SS   3015. 4 400     10    P    43000      54  2 132 10
 1N2929A             Diode,Microwave      CEN    3   N/R   029   N/R    NR    26       1      1    F    8063     N/R NA 129 NA
 1N2970B             Diode,Zener          CEN    N   N/R   029   N/R    NR    26       1      1    F    144367   N/R NA 129 NA
 1N2970B{124)        Diode,Zener          MSM    N   N/R   468   0794   SS   3015. 7   3      5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R 10    NA 16
                                                                                              5    P    16000    N/R 10    NA 16
* 1M2970RBC124)      Diode,Zener          MSM    N   N/R   468 0794 SS       3015. 7    3     5    P    2000     N/R 10    NA 16
                                                                                              5    P    4000     N/R  10   NA 16
                                                                                              5    P    16000    N/R 10    NA 16




       Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
4-4       Discrete Susceptibility Test Data                                                              VZAP-95
 Part                 Discrete 4-4                ESD Date Tst Tst Tst Test            Num Num T Test         Pin Fail Tst Gen
 Number   (Slash)     Description             Mfr Cls Code Src Dte Typ Meth.           Pul Dev R Vltg         Cmb Crit Rem Rem

* ltJ2977B<124)       Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1H2977RBU24)         Diode,Zener            MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2979B{124>        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1M2979RBU24)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* lN29B0B(124>         Diode,2ener            MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    MA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2980RB(124>       Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2982BU24)         Diode,Zener             MSM   N   N/R   468 07 94 SS   3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2982RBU24)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
  1N2984B             Diode,Zener             CEN   N   N/R   029 N/R NR      26         1   1   F   211692   N/R   NA   129 NA
  1N2984BU24)         Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2984RB<124)       Diode,Zener             MSM   N   N/R   468 0794 SS    3015..7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
  1N2985B             Diode,Zener             CEN   N   N/R   029 N/R NR      26         1   1   F   120665   N/R   NA   129 NA
  1N2985RB            Diode,Zener             MOT   N   N/R   029 N/R NR      26         1   1   F   152760   N/R   NA   129 NA
- 1N2986B(124)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
  1M2986RB(124)       Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
  1N2988B             Diode,Zener             CEN   N   N/R   029 N/R NR      26         1   1   F   155728   N/R   NA   129 NA
  1N2988B(124)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* lN2988RBil24)       Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    HA 16
  1N2989B             Diode,Zener             N/R N     N/R   029 N/R NR      26         1   1   F   161151   N/R   NA   129 NA
  1N2991B             Diode,Zener             CEN- N    N/R   029 N/R NR      26         1   1   F   176527   N/R   NA   129 NA
  1N2993B{124)        Diode,Zener             MSM N     N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2993RBU24)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2995B{124)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA .16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N299SRBU24)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2997BU24)         Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7    3    5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2997RBU24)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7    3    5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2999BU24)         Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N2999RB(124)       Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7     3   5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N3005B(124)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7    3    5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N3005RB(124)       Diode,Zener             MSM   N   N/R   468 0794 SS    3015.,7    3    5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1K3007B{124)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015 .7    3    5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    NA 16
                                                                                             5   P   16000    N/R   10    NA 16
* 1N3C07RBU24)        Diode,Zener             MSM   N   N/R   468 0794 SS    3015..7    3    5   P   2000     N/R   10    NA 16
                                                                                             5   P   4000     N/R   10    HA 16
                                                                                             5   P   16000    N/R   10    NA 16




      Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
          SECTION 5:
PASSIVE SUSCEPTIBILITY TEST DATA
                                           DATA COLUMN DEFINITIONS
(1)                (2)                     (3)   (4)   (5)    (6) (7)   (8) (9)    (10)   (11)   (12) (13)   (14)   (15)   (16)   (17)
Part               Section Name and Page         ESD   Date   Tst Tst   Tat Tst    Num    Num    T    Tst    Pin    Pail   Tst    Gen
Number (Slash)     Description             Mfr   Cls   Code   Src Dte   Typ Meth   Pul    Dev    R    Vltg   Comb   Crit   Rem    Rem




      (1)        Part Number (Slash).        The part number of the device and slash number if available in
                 parenthesis.
                     "*" prefix indicates part is not included in VZAP-91.
                     "-" prefix indicates part has changed classification since VZAP-91.
      (2)        Description. Basic function of the device. Includes 'Technology" for Microcircuits in
                 parenthesis.
      (3)        Mfr. Manufacturer of the device (see Appendix C).
      (4)        ESD Cls. The classification per MIL-STD-1686B and MIL-STD-883 based on the best available
                 data.
      (5)        Date Code. Date code as it appeared on the device.
      (6)        Test Src. Source code - identifies the data source (see Section 6).
      (7)        Tst Dte. Date (month and year) the test was performed.
      (8)        Test Type. SS = Step Stress, i.e., the device was stressed in incremental voltages and tested for
                 failure between each. GN = Go/No-Go, i.e., one voltage level only applied to the device and
                 then tested for failure.
      (9)        Test Method. If MIL-STD-883 Method 3015 was used. The version of 3015.X will appear.
                 Otherwise a reference to the resistance (in ohms) and the capacitance in (farads) of the discharge
                 circuit will be provided to the table in Appendix E.
      (10)       Num Puis. The total number of pulses applied to the device at the voltage (field no. 13) before
                 failure (if result = fail) or before testing for failure (if result = pass).
      (11)       Num Dev. The number of devices which were tested to the same stresses results (i.e., all other
                 fields the same).
      (12)       T/R. Test result, i.e., whether the device passed = P or failed = F testing at the given test
                 conditions.
      (13)       Test Volt. The voltage applied to the device (if the device was step-stressed and it failed during
                 stepping, the failure voltage is given).
      (14)       Pin Comb. The pin combination tested: function, pin number, and polarity (if known) (see
                 Appendix F). N/R = Not Reported
      (15)       Fail Crit. Criteria used to detect device failure (see Appendix B). NA= Not Applicable.
      (16)       Tst Rem. Any comment which clarifies the data with respect to the specific test record (see
                 Appendix C). NA = Not Applicable.
      (17)       Gen Rem. Any comment which clarifies the test procedures or results (see Appendix D). NA =
                 Not Applicable.
VZAP-95                                      Passive Susceptibility Test Data                              5-1
 Part                       Passive 5-1             ESD Date Tst Tst      Tst Test      Num Num T Test     Pin Fail Tst Gen
 Number (Slash)             Description         Mfr Cls Code Src Dte      Typ Meth      Pul Dev R Vltg     Cmb Crit Rem Rem

 0181A00361                 Resistor,Fixed      BEC   1 N/R     071 0779 GN     26       10    1 F 15000   N/R    43   NA   NA
                                                                                               1 F 15000   N/R    43   NA   NA
                                                                                               1 F 15000   N/R    43   NA   NA
                                                                072 0779 GN     26       10    1 F 2000    N/R    43   NA   NA
                                                                                               1 P 2000    N/R    43   NA   NA
                                                                                               1 F 2000    N/R    43   NA   NA
                                                                073 0779 GN     26       10    1 P 170     N/R    43   NA   NA
                                                                                               1 P 170     N/R    43   NA   NA
                                                                                               1 P 170     N/R    43   NA   NA
 0181A00363                 Resistor,Fixed      BEC   1 N/R     071 0779 GN     26       10    1 F 15000   N/R    43   NA   NA
                                                                                               1 F 15000   N/R    43   NA   NA
                                                                                               1 F 15000   N/R    43   NA   NA
                                                                072 0779 GN     26       10    1 P 2000    N/R    43   NA   NA
                                                                                               1 F 2000    N/R    43   NA   NA
                                                                                               1 F 2000    N/R    43   NA   NA
                                                                073 0779 GN     26       10    1 P 170     N/R    43   NA   NA
                                                                                               1 P 170     N/R    43   NA   NA
                                                                                               1 P 170     N/R    43   NA   NA
 0181A00371                 Resistor.Fixed      BEC   3 N/R     071 0779 GN     26       10    1 F 15000   N/R    43   NA   NA
                                                                                               1 F 15000   N/R    43   NA   NA
                                                                                               1 F 15000   N/R    43   NA   NA
                                                                072 0779 GN     26      10     1 P 2000    N/R    43   NA   NA
                                                                                               1 P 2000    N/R    43   NA   NA
                                                                                               1 F 15000   N/R    43   NA   NA
                                                                073 0779 GN     26       10    1 P 170     N/R    43   NA   NA
                                                                                               1 P 170     N/R    43   NA   NA
                                                                                               1 P 170     N/R    43   NA   NA
 0181A00373                 Resistor,Fixed      BEC   3 N/R     071 0779 GN     26      10     1 F 15000   N/R    43   NA   NA
                                                                                               1 F 15000   N/R    43   NA   NA
                                                                                               1 F 15000   N/R    43   59   NA
                                                                072 0779 GN     26      10     1 P 2000    N/R    43   NA   NA
                                                                                               1 P 2000    N/R    43   NA   NA
                                                                073 0779 GN     26      10     1 P 170     N/R    43   NA   NA
                                                                                               1 P 170     N/R    43   NA   NA
ERL-OS                      Resistor,Fixed      DAL   3 N/R     415 0781 SS     26      23     5 F 4500     45    24   17   36
                                                                                               S F 4500     45    24   39   36
                                                                                               5 P 16000    45    24    8   36
                            Resistor,Fixed      DAL   1 N/R     415 0781 SS     26       8     5 F 1500     45    24   27   36
                                                                                               5 F 4500     45    24    5   36
                                                                                               5 P 16000    45    24    8   36
RLR07C1003FS(MIL-R-39017)   Resistor,Fixed      TRW   3 8504 436 0387 SS        26       3    36 P 4000    N/R     8   NA    2
"~~ "
MF-1                        Resistor,Fixed      DAL   N N/R 415 0781 SS         26      80     5 P 16000    45    NA   40   36
                                                                                               5 P 16000    45    NA   31   36
MF-1/10                     Resistor,Fixed      DAL   3 N/R     415 0781 SS     26      23     5 F 4500     45    NA   57   36
                                                                                               5 F 10000    45    NA   44   36
MF-1/2                      Resistor,Fixed      DAL   3 N/R     415 0781 SS     26      50     5 F 10000    45    NA   55   36
                                                                                               5 F 10000    45    NA   44   36
MF-1/4                      Resistor,Fixed      DAL   N   N/R   415 0781 SS     26      80     5 P 16000    45    NA   64   36
                                                                                               5 P 16000    45    NA    7   36
MF-1/8                      Resistor,Fixed      DAL   3 N/R     415 0781 SS     26      23     5 F 4500     45    NA   47   36
                                                                                               5 F 4500     45    NA   36   36
ERL-20                      Resistor,Fixed      DAL   3 N/R     415 0781 SS     26      50     5 F 10000    45    24    2   36
                                                                                               5 F 10000    45    45   49   36
                                                                                               5 P 16000    45    24   26   36
HC210S-2R                   Resistor,Fixed      HYC N     N/R   387 0182 GN     21      10     3 P 1000    N/R   111   NA   NA
                                                                                               3 P 1000    N/R   111   NA   NA
                                                                                               3 P 1000    N/R   111   NA   NA
                                                                                               3 P 1000    N/R   111   NA   NA
                                                                                               3 P 1000    N/R   111   NA   NA
                                                                388 N/R   GN    21      10     3 F 10000   N/R   111   NA   NA
                                                                                               3 F 10000   N/R   111   NA   NA
                                                                                               3 F 10000   N/R   111   NA   NA
                                                                                               3 F 10000   N/R   111   NA   NA
                                                                                               3 F 10000   N/R   111   NA   NA
A377DJJ-00                  Resistor,Fixed      CCL   2 N/R     392 1286 SS    3015.2    1     5 P 2750    N/R    23   NA   NA
411R-001-101                Resistor,Fixed      N/R   2 N/R     440 0289 SS    3015.7    3     1 P 3000    N/R    52   NA   NA
                                                                                               1 P 3000    N/R    52   NA   NA
                                                                                               1 P 3000    N/R    52   NA   NA
                                                                                               1 P 3000    N/R    52   NA   NA
CMF-50                      Resistor,Fixed      DAL   3 N/R     415 0781 SS     26      23     5 F 4500     45    NA   32   36
                                                                                               5 P 4500     45    NA   33   36
ERC-50                      Resistor,Fixed      SAL   1 N/R     415 0781 SS     26       8     5 F 1500     45    NA   48   36
                                                                                               5 F 4500     45    NA   69   36
                                                                                               5 P 16000    45    NA    8   36
MF-50                       Resistor,Fixed      DAL   3 N/R     415 0781 SS    26       50     5 F 10000    45    NA   14   36
                                                                                               5 F 10000    45    NA   53   36
EMF-50-100                  Resistor,Fixed      DAL   3 N/R     415 0781 SS    26,      23     5 F 4500     45    NA   55   36
                                                                                               5 F 4500     45    NA   56   36
                                                                                               5 F 4500     45    NA   48   36
RN50H1692                   Resistor,Fixed      N/R   1 N/R     074 N/R   SS    7        1     1 F 200     N/R    42   NA   NA
                                                                075 N/R   SS   21        1     1 P 1000    N/R    42   NA   NA
                                                                                               1 P 1000    N/R    42   NA   NA
                                                                078 N/R   SS    21       1     2 F 1000    N/R    42   NA   NA
                                                                                               1 P 1000    N/R    42   NA   NA
                                                                                               1 F 1000    N/R    42   NA   NA
                                                                081 N/R   SS    21       1     1 F 2000    N/R    42   NA   NA




        Reliability Analysis Center (RAC) • 201 Mill St., Rome, NY 13440 • 315-337-0900
 SECTION 6:

DATA SOURCES
VZAP-95                                                                          Data Sources              6-1


6 . 0 DATA SOURCES
The following section contains brief descriptions of the various data sources used in this publication. They
are presented in numerical order by source code which is found in field No. 6 in the detailed data of Sections
3-5. Note that there may be a range of source codes associated with one data source if different test methods
were used by that source.
001          Three Fairchild 2102LI ICs were tested using the standard human body model. The voltage
             was applied to each input with the positive voltage on the input and the negative on Vg§ or
             Vprj). Pulsing started at 200 volts and incremented in 100-volt steps until failure occurred.
             Three pulses were given at each voltage. Out of a total of 39 inputs tested, 7 were damaged at
             300 volts, 22 at 400 volts, 9 at 500 volts and 1 at 600 volts.
002          Type 6514 Static RAMs from RCA and Monolithic Memories were the devices tested. The
             inputs were step-stressed until failure in both polarities; A positive potential at the input was
             found to be the more destructive condition.

003          Devices of various technologies were stressed using a 100 pF and 0 ohm model. The inputs
             were step-stressed with one supply lead grounded. The voltage was increased in 100-volt steps
             until failure.

004          MOS, STTL, and TTL devices were stressed using 125 pF capacitance and 0 resistance. The
             inputs were stressed with no other pins grounded (i.e., floating device model). In this
             situation, it is the capacitance of the device itself which allows energy to be dissipated causing
             device damage.

005          A sampling of digital to analog converters from 6 different manufacturers were tested. Step-
             stress comparative testing was done using the standard human body model. A change in any
             electrical parameter of 10% or more was considered a failure. The following devices were
             tested:

                              Analog Devices                 AD 7533
                              Micro Power Systems            AD 7520
                              Analog Devices                 AD 7520
                              Intersil                       AD 7520
                              Hybrid Systems                 DAC 331
                              Raytheon                       AD 7521
                              National                       AD 7521
006          Various CMOS devices were tested using the standard human body model. A sample of four
             devices were step-stressed on a different pin combination for every voltage. The pin
             combinations used were:

                                (+)                           -B
                              VDD                            Input
                             Input                           vSs
                             Input                     Associated Output
                      Associated Output                     Input
             The voltage stepping increments were 200 volts starting at 400 volts. An out-of-spec current
             leakage was used as the failure criterion.



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