Chip Year Process (µm) Epi.(µm) Pitch (µm) Metal pixels Peculiar
M1 1999 AMS 0.6 14 20 3M 4k thick epitaxy
M2 2000 MIETEC 0.35 4.2 20 5M 4k thin epitaxy
M3 2001 IBM 0.25 2 8 3M 32k deep sub-mm
M4 2001 AMS 0.35 no 20 3M 4k low dop. Substrate
M5 2001 AMS 0.6 14 17 3M 1M real scale 1M pixels
M6 2002 AMIS 0.35 4.2 28 5M 3k fast col. // r.o. and integrated spars.
M7 2003 AMS 0.35 no 25 4M 1k fast col. // r.o. + integ. spars. (photoFET)
M8 2003 TSMC 0.25 ~8 25 5M 4k fast col. // r.o. and integrated spars.
M9 2004 AMS 0.35 opto ~14 20/30/40 4M 7k tests diodes/pitch/leakage current
M9 no epi 2004 AMS 0.35 opto no 20/30/40 4M 7k tests diodes/pitch/leakage current
M10 Star 1 2004 TSMC 0.25 ~8 30 3M 16k 1st proto. for STAR vtx det. upgrade
M11 2005 AMS 0.35 opto ~14 30 3M 7k rad.tol. struct.
M12 Mosaic 1 2005 AMS 0.35 hires no 35 4M 0.6k multi-memory pixels (FAPS)
M13 Mosaic 2 2005 AMS 0.35 hires no 20 4M 7k fast col. // r.o.
M14 Star 2 2005 AMS 0.35 opto no 30 4M 16k final proto. STAR vtx det. upgrade
M15 2005 AMS 0.35 opto ~14 20/30 4M 7k multi-purpose tracker-imager
SUC 1 2003 AMIS 0.35 4.2 25-35 5M 4k rad.tol. struct. (SUCIMA project)
SUC 2 2003 AMS 0.35 no 40 3M 2k low dop. Substrate (SUCIMA project)
SUC 3 2003 AMIS 0.35 4.2 20 5M 8k rad.tol. struct. (SUCIMA project)
SUC 4 Mtera 2004 AMS 0.35 14 150 3M 12.5k hadrontherapy/beam monitor. (SUCIMA)
SUC 5 2004 AMIS 0.35 4.2 30 5M 65k proto. Dosimetry (SUCIMA project)