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					                                     Mercury Laser Diode Arrays




                                                          Mercury




    Barry Freitas, Dave Van Lue, Joe Satariano, Everett Utterbach,
                   Larain DeMercurio, Kurt Cutter,
                       Terry Delima, Ray Beach
                            HAPL Review
                         Crowne Plaza Hotel
                           Pleasanton, CA
                          November 13, 2001
RJB/VG Mercury Laser IFE Meeting 6
      We have completed the V-BASIS packages for three
      entire backplanes (>240 kW peak optical pump power)

              Split backplane holds 36 V-BASIS tiles




                                     3 backplanes are complete, 4 th backplane by December




RJB/VG Mercury Laser IFE Meeting 6
                                                   .

      V-BASIS package components                              23-bar V-BASIS: etched Si heatsink


                                                                                                            Si lens
                                                                                                            frame


                                                             micr olens




                                                                                                spr ing




                                                                                                              ng
                                                                                                             p ri
                                                                                                          v-s
                                                                           diode

                                                                          Si submount   notch


                                                                          AlN sheet


                                                                          Mo block




                                                              - Mo-base expansion-matched to Si
                                                                       Molybdenum
                                                              - Thin AIN layer for electrical isolation
                                                                       base
                                                              - V-Spring adhesion-enhanced with epoxy
                                                             AlN
                                                             layer
                                                 Metalized
                                                 silicon
                                     Microlens
                                     array and
                                     frame



RJB/VG Mercury Laser IFE Meeting 6
      V-BASIS diode tile and plating specifications

                                            Micro Lens Array
                                            AR Coated                          V-Contacts
                                                                               1000 to 1200 Å Au,
                After Si, ALN & Mo parts                                       6 to 8 µ In, (Bottom only)
                are assembled
                3 to 6 µ In, is deposited
                                                                               Diode Bars
                on V-Groove side of Si.
                                                                                    V-Groove side of Si,
         Top and Bottom of ALN,                                                     100 to 200 Å Ti,
         1000 to 1200 Å Ti,                                                         10 to 12 µ Ag,
         1000 to 1200 Å Ni,                                                         1000 to 1200 Å Ni,
         1000 to 1200 Å Au,                                                         1000 to 1200 Å Au,
         6 to 8 µ In, (Top only)

                    Top of Mo Block
                                                                                        Bottom side of Si,
                    1000 to 1200 Å Ti,
                                                                                        100 to 200 Å Ti,
                    1000 to 1200 Å Ni,
                                                                                        1000 to 1200 Å Ni,
                    1000 to 1200 Å Au,
                                                                                        1000 to 1200 Å Au,
                    6 to 8 µ In,

                                                               Shorting Clamp
                                                               1000 to 1200 Å Au,




RJB/VG Mercury Laser IFE Meeting 6
      V-BASIS current flow path

                        N-Side                          P-Side to N-Side        P-Side
                     Shorting Clamp                         Jumper          Connector Paddle




     Water
     Flow




                                         Heat Sink
                                      Clamping Screws


                                                                 N-Side                P-Side
                                                                Connector             Connector




RJB/VG Mercury Laser IFE Meeting 6
           The diode backplane has the required brightness
           and thermal performance
                           1.0                                                                         1.0


                                     Fast axis                           1 Tile
                                                                                                                Slow axis                       1 Tile
                           0.8                                                                         0.8
                                                                                                                                                10 Tiles
                                     brightness                          10 Tiles                               brightness
                           0.6                                                                         0.6




                                                                                           Intensity
               Intensity




                           0.4                                                                         0.4




                           0.2                                                                         0.2




                           0.0                                                                         0.0
                             -0.15     -0.10    -0.05     0.00    0.05      0.10    0.15                 -0.3     -0.2   -0.1     0.0     0.1    0.2       0.3

                                                        Radians                                                                 Radians


                           1.0                                             1Hz
                           0.8                                             5Hz
                                                                           10Hz                 The diode backplane provides
           Intensity




                           0.6                                                                  suitable mechanical tolerance
         A.U. 0.4
                                                                                                and cooling
                           0.2

                           0.0
                                     890       895   900     905            910
                                                Wavelength (nm)

RJB/VG Mercury Laser IFE Meeting 6
        Histogram of center wavelengths of 80 fabricated V-
        BASIS packages
                                                                       Wavelength Distribution of 80 V-BASIS Packages




                                                                  20
                                     Number of V-BASIS Packages




                                                                  15




                                                                  10




                                                                  5




                                                                  0
                                                                          897    898     899        900   901    902
                                                                                               nm

                           Remember, our original modeling specified a gaussian spread with a FWHM of ~
                           8 nm. While this distribution is not gaussian it is narrower overall than we had
                           originally anticipated.

RJB/VG Mercury Laser IFE Meeting 6
         The V-BASIS packaged diode bars meet the optical
         specifications of the Mercury Laser System
                                                                             0.5

                                                                             0.4

                                                                             0.3               44%
                                                                Efficiency
                                                                             0.2

                                                                             0.1

                                                                             0.0
                                                                                0   20   40   60    80 100 120 140
                                                                                          Current (A)
                 3000
                                                                            3000
                 2500
                                      2.75 kW         Mercury requirement   2500
         2000                        (23 bars)
   Power                                                                2000
                                                                  Power                   100 W          115 W
    (W)  1500
                                                                   (W) 1500              peak/bar       peak/bar
                 1000
                                                                            1000
                   500
                                                                             500
                       0
                           0   20 40 60 80 100 120 140                         0
                                                                               0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
                                        Current (A)
                                                                                         Shots (10^8)
RJB/VG Mercury Laser IFE Meeting 6
      Summary
                                 Requirement                                  Status



                                100 Wpeak/bar                115 Wpeak/bar               


                       Fabrication of 120 tiles               Completed                  
                    (144 tiles per amplifier head)
                        45% electrical to optical         44% demonstrated             almost
                               efficiency

                                                     1.4x10 8 shots without problems
                      Reliability of > 2x108 shots   Every package is burned in for    almost
                                                        5x10 6 shots (75 Hz for 18+
                                                                  hours)
                      Power droop during pulse          5% droop demonstrated            
                              < 15%
                          Assemble tiles on split       3 backplanes have been           
                               backplane               completed, the 4 th will be
                                                      completed by the end of the
                                                             calendar year
                      Pulse-integrated linewidth     Demonstrated 4.7 nm FWHM            
                          < 8.5 nm FWHM                 on tiles for backplane
RJB/VG Mercury Laser IFE Meeting 6

				
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