Process Coral Name Substrates Gases Cleaning Substrate Number Temp Film Comments
Accepted required Shape of Range Thickness
accepted Samples Range
Per Run
Grown Tylan1 Clean N2, O2, Pre-diff 3” & 4” 50 700- 25A-2um Dry and wet oxidation. Use calculator to
Oxide- Tylan2 group Ar, H2 1100C determine growth rate.
Atmospheri N2 and Ar annealing available.
c Furnaces
Thermco1 Clean N2, O2, Pre-diff 4” & 6” 50 700- 25A-2um Dry and wet oxidation. Use calculator to
Thermco2 group Ar, H2 1100C determine growth rate.
N2 and Ar annealing available.
Tylan3 Semi-clean N2, O2, Pre-diff at 3” & 4” 50 700- 25A-2um Dry and wet oxidation. Use calculator to
group Ar, H2 wbsilicide 1100C determine growth rate.
only N2 and Ar annealing available.
Tylan4 Contaminate N2, O2, Pre-diff or 3” & 4” 50 700- 25A-2um Dry and wet oxidation. Use calculator to
d Ar, H2 PRS1000 or 1100C determine growth rate.
group PRX127 N2 and Ar annealing available.
clean at
wbgen only
Grown ag4108 Clean N2, O2, Pre-diff 4” 1 450- 10-250A N2 and Ar annealing available. Maximum
Oxide- group Ar, NH3, 1150C time and temp = 60 secs at 1150C (95A).
Rapid N2O,
Thermal 4%H2 in
Annealers N2
ag4100 Semi-clean N2, O2, Pre-diff at 4” & 6” 1 450- 10-250A N2 and Ar annealing available.
A&B Ar, NH3, wbsilicide 1150C
groups N2O, only
4%H2 in
N2
rtaag Contaminate N2, O2, Pre-diff or 4” 1 300- 10-250A
d 4%H2 in PRS1000 or 1200C
group N2 PRX127
clean at
wbgen only
rtagaas Contaminate N2, O2, Pre-diff or 4” 1 300- 10-250A For GaAs samples only.
d 4%H2 in PRS1000 or 1200C
Nancy Latta 7/12/06
group N2 PRX127
clean at
wbgen only
Deposited tylanbpsg Clean and N2, O2, Pre-diff or 4” 26 clean, 350- 100A-3um
Oxide semi-clean SiH4, PH3 PRS1000 or 26 semi- 450C
groups PRX127 clean
clean at
wbmetal
teos2 Clean group N2, O2, Pre-diff 4” & 6” 23 450- 50A-1um Very conformal.
TEOS 680C
sts Contaminate N2, O2, Pre-diff or 4” & 6” and Four 4” or 350C 100A-4.5um PECVD.
d NH3, PRS1000 or pieces one 6”
group 2%SiH4 in PRX127
N2 clean at
wbgen only
Deposited tylannitride Clean N2, NH3, Pre-diff 4” 44 785- 100A-2um Stociometric, low stress (~150mPa)
Nitride group DCS 850C and super low stress (~50mPa) programs
available
thermconitride Clean N2, NH3, Pre-diff 4” & 6” 44 785- 100A-2um Stociometric and low stress (~150mPa)
1 group DCS 850C programs available
sts Contaminate N2, O2, Pre-diff or 4” & 6” and Four 4” or 350C 100A-4.5um PECVD.
d NH3, PRS1000 or pieces one 6”
group 2%SiH4 in PRX127
N2 clean at
wbgen only
Deposited tylanpoly Clean N2, H2, Pre-diff 4” 44 525- 100A-3um Standard polysilicon deposition at 620C.
Single group SiH4 650C Dep rate ~137A/min.
Crystal,
Poly and
Amorphous
Silicon
thermcopoly1 Clean N2, H2, Pre-diff 4” & 6” 44 525- 100A-3um Standard polysilicon deposition at 620C. P
group SiH4, 650C and N doping available.
PH3,
B2H6
epi Clean N2, H2, Pre-diff 4” 1 600- 50A-5um Operates at 1-760Torr.
Nancy Latta 7/12/06
group SiH4, 1200C
SiClH4,
GeH4,
Ph3,
AsH3,
B3H6
Deposited tylansige Clean N2, H2, Pre-diff 4” 23 400- 100A-1um
SiGe and group Ar, SiH4, 650C
Ge Si2H6,
GeH4
epi Clean N2, H2, Pre-diff 4” 1 600- 50A-5um Operates at 1-760Torr.
group SiH4, 1200C Deposits both SiGe and Ge.
SiClH4,
GeH4,
Ph3,
AsH3,
B3H6
Atomic ald Clean N2, H2, Pre-diff 4” 1 250-350C 10A-0.5um Deposits about 1A/sec of Al2O3.
Layer (spectrum2) group NH3, O3, Very conformal.
Deposition H2O, TMA
Forming tylanfga Clean N2, PRS1000 at 3” & 4” 50 250-500C --- For standard metals deposited in gryphon
Gas Anneal group 10%H2 in wbmetal only.
N2 N2 and Ar annealing available.
fga2 Contaminate N2, Ar, Pre-diff or 4” & 6” 25 250-650C --- Any material that won’t vaporize is okay.
(gaas23) d 4%H2 in PRS1000 or N2 and Ar annealing available.
group N2 PRX127
clean at
wbgen only
Nancy Latta 7/12/06