Curriculum Vitae Dr. M. ASGHAR HASHMI
Professor of (PHYSICS)
Semiconductor Division, Department of Physics,
The Islamia University of Bahawalpur, Pakistan.
Present Address:
Department of Physics, The Islamia University of
Bahawalpur, Pakistan
Email:
mhashmi@iub.edu.pk, mhashmi@uncc.edu ,
asghar_hashmi@yahoo.com
Tel# +92 62 9255484, +92 62 9255536
Cell# 0301 7724897
Contact at USA (Not Operative):
Off. +1 704 687 8134
Res. +1 704 919 1598
Cell. +1 910 209 1013
OBJECTIVE:
1. Academic: Courses on Semiconductor Materials and Device Characterization, Methods of Experimental
Techniques and Material Science for M. Sc, M. Phil and Ph. D. students and all under-grade
courses of Physics could be offered.
2. Research
Experience: Fabrication and Characterization of Semiconductor Devices using Growth Techniques: MBE,
PECVD, CVD, Aqueous Chemical Reaction, VLS (Vapor Liquid and Solid) and Solid State
Reaction. Characterization Techniques: DLTS, Raman Scattering, SEM, AFM, XRD, 4-Prob
Resistivity and Ellipsometry.
EDUCATION:
1. Ph.D. (PHYSICS) 1994
Quaid-i-Azam University Islamabad, Pakistan
Title: Deep Level Transient Spectroscopy of Radiation-Induced Defects and Their Complexes in Silicon
2. M.Phil (PHYSICS) 1987 (A-grade)
Quaid-i-Azam University Islamabad, Pakistan.
Title: Characterization of Silicon and Germanium Commercial Diodes Using I-V and C-V measurements.
3. M.Sc. (PHYSICS) 1980 (First div-Silver medallist)
4. B.Sc. (Physics, Mathematics A & B Courses, English) 1977 (First div.)
TEACHING/RESEARCH EXPERIENCE Over 28 YEARS (since 18-Mar-19981)
PRESENT POST: PROFESSOR OF PHYSICS
PROFESSIONAL DATA:
CAREER HISTORY: (DESIGNATION/ORGANIZATION)
1. Lecturer in Physics
Govt. S.E. College Bahawalpur , Pakistan
March 18, 1981 to May 31, 1982.
2. Lecture in Physics
Islamia University Bahawalpur, Pakistan
May 31, 1982 to Feb. 01, 1994.
3. Assistant Professor Of Physics (PBS-18)
Islamia University Bahawalpur, Pakistan.
Feb. 01, 1994 to July. 21, 2001
4. Associate Professor of Physics (BPS-19)
Islamia University Bahawalpur, Pakistan.
July. 21, 2001 to Sept 03, 2003
5. PROFESSOR of Physics,
Islamia University Bahawalpur
Sept.03, 2003 July 13, 2010.
6. PROFESSOR of Physics (On Tenure Track)
The Islamia University of Bahawalpur, Pakistan
July 13, 2010 to date.
ADMINITRATIVE EXPERIENCE:
1. Project Leader of University Project Entitled: University Networking & Computerization Enhancement Project worth
Rs. 31.316 Million Financed by HEC (2003-2006).
2. Member Affiliation Committee (Islamia University Bahawalpur)
3. Member Selection Committee (Islamia University Bahawalpur)
4. Member of Provident Fund Committee (Islamia University Bahawalpur)
5. Member of Support Complex Committee (Islamia University Bahawalpur)
6. Editor-in-Chief, J. Appl & Pure Sciences, A publication of Islamia University of Bahawalpur.
SKILLS & EXPERTISE:
1. Electrical and Optical Characterization of Shallow and Deep Level Defects and Interfacial levels in: Semiconductors
Materials: elemental-Cz-grown Si, MBE grown GaAs, MOCVD & MOVPE grown In(Ga,As)P, GaN and SiC.
2. Techniques: Deep Level Transient Spectroscopy (DLTS, DLTFS & Admittance Spectroscopy), RAMAN
Spectroscopy(UV and Laser), XRD, CVD, AFM, SEM, Elipsometry, Resistivity Measurements
3. Preparation of Schottky Contacts on Semiconductors using EBS technique
4. AC & DC Conductivity Measurements of Polymers
5. Computer programming in ( FORTRAN, Turbo C++) Languages
COURSES TAUGHT:
1. Methods of Mathematical Physics, Quantum Mechanics, Electromagnetism, Solid state Physics, Atomic & Molecular
Physics, Computational Physics, Computer Graphics in TC++, Applied Physics and Teaching of Physics
2. Modern Physics Practicals
3. Basic Electronics Practicals
4. F.Sc. and B.Sc. Physics Courses
5. F.Sc. and B.Sc.(Electronics Engg.) Practicals
RESEARCH PROJECTS:
1. Characterization of Highly Energetic Particle Irradiated Silicon Samples
2. worth Rs. 250,000 (1994-95) funded by The Islamia University of Bahawalpur
3. Properties of deep level defects in wide gap semiconductor materials using thermal admittance spectroscopy: worth
Rs. 1.997 million (2006-2008) funded by Higher Education Commission of Pakistan.
4. Characterization of deep level defects in wide gap semiconductor materials.
5. Worth Rs. 2,25,000 (2007-2008) funded by The Islamia University of Bahawalpur.
6. Growth of Low-Cost, Large-Area and Quality Graded Silicon Carbide (SiC) Wafers by Low Pressure Chemical Vapor
Deposition (LPCVD) Technique worth Rs. 7.450 million (2007-10), funded by Higher Education Commission of
Pakistan.
SETTING UP OF NEW LABORATORIES:
1. Semiconductor Physics Laboratory for M. Phil, Ph.D and Postdoc. Studies
2. Modern Physics Laboratory for M.Sc Studies
M.Sc. RESEARCH THESES SUPERVISED:
1. DC Conductivity Measurements Of beta-Irradiated poly(2-vinylepyredene)
TAMUR IDREES (1991-93), Islamia University Bahawalpur, Pakistan
2. I-V Characteristics of Silicon Diodes Over the Temperature Range (77K - 300K)
SYED FAIQ MAHMOOD (1992-94) Islamia University Bahawalpur, Pakistan
3. C-V Measurements of Schottky Diodes of Silicon
AZHAR NAEEM (1993-95) Islamia University Bahawalpur, Pakistan
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4. C-T Measurements Of Abrupt Junction Diodes Of Silicon
NOORULLAH (1993-95) Islamia University Bahawalpur, Pakistan
5. Release Spectroscopy of GaAs/AlAs/GaAs heterointerface Grown by Molecular Beam Epitaxy HAFEEZULLAH
(2001-2002), Islamia University Bahawalpur Pakistan.
6. Measurement of dielectric constant due to SrTiO3 in Al/SrTiO3/n-Si structure using capacitance voltage method
TASNEEM MAZHAR (2002-2004) Islamia University Bahawalpur, Pakistan
7. Electrical Measurement and analysis of as-grown silicon based MIS structure NARGIS BANO (2002-2004) Islamia
University Bahawalpur, Pakistan
8. Characteristics of Metal Insulator semiconductor using capacitance technique FARZANA PERVEEN (2002-2004)
Islamia University Bahawalpur, Pakistan
9. Temperature dependent characteristics of MIS studied by electrical method SADIA IRSHAD (2002-2004) Islamia
University Bahawalpur, Pakistan
10. Depth profiling of majority carrier in GaAs/Al 0.78Ga 0.22 As junction by capacitance method SHUMAILA
KRIN(2002-2004) Islamia University Bahawalpur, Pakistan
11. Identification of Accumulation, Depletion, and Inversion Regions in Al/SrTiO3/n-Si structure using High Frequency
Capacitance Bridge SHABANA IDREES (2002-2004) Islamia University Bahawalpur, Pakistan
12. Analysis of Raman Spectra due to Mn-doped GaN Layers Grown by Molecular Beam Epitaxy MUHAMMAD
SHAHID (2002-2004) Islamia University Bahawalpur, Pakistan
13. Evaluation of Raman Shifts in Optical Phonon Modes from MBE Grown Mn Doped Gallium Nitride Layers ISLAH
UDIN (2002-2004) Islamia University Bahawalpur, Pakistan
14. Theoretical calculation of Polar modes of GAN layers grown by plasma assisted MBE
AROOJ ASHRAF (2003-2005) Islamia University Bahawalpur, Pakistan
15. Derivation of Phonon Dispersion relation of non polar vibration modes in GaN semiconductors HUMERA HANIF
(2003-2005) Islamia University Bahawalpur, Pakistan
16. Study of N/Ga flux-ratio influence on the quality of GaN crystal using Raman spectroscopy NAZIA ASHRAF (2003-
2005) Islamia University Bahawalpur, Pakistan
17. Phonon Plasmon coupled modes of spintronic materials-Gallium Nitride SHAZIA PERVEEN (2003-2005) Islamia
University Bahawalpur, Pakistan
18. Deep Level Transient spectroscopy of metal insulator Semiconductor structure Syed MANSOOR ALI (2003-2005)
Islamia University Bahawalpur, Pakistan
19. Electrical characterization of commercial Diodes M. HAMMAD AZIZ (2003-2005) Islamia University Bahawalpur,
Pakistan
20. Characterization of pn-GaN using I-V, C-V measurements, ADNAN KHALID (2003-2005) Islamia University
Bahawalpur, Pakistan.
21. Surface study of ZnO by scanning electron microscopy, SADAF RAFIQ (2004-2006) Islamia University Bahawalpur,
Pakistan.
22. Structural properties of ZnO by x-ray diffraction measurements, Adeela Mehboob 2004-2006) Islamia University
Bahawalpur, Pakistan.
M.Phil. RESEARCH THESES SUPERVISED
1. Capacitance Spectroscopy of GaA/AlAs/GaAs Heterostructures.
FAISAL Malik. (2003-05) Islamia University Bahawalpur, Pakistan
2. Effect of radiations on III-V semiconductors (p-n-GaAs/AlAs/AlAs/GaAs) using DLTS.
M. KHALID. (2003-05) Islamia University Bahawalpur, Pakistan
3. Deep Level Transient Spectroscopy of GaAs/Alx Ga 1-x As/GaAs.
ARSLAN A. (2003-05) Islamia University Bahawalpur, Pakistan
4. Time resolved LASER optogalvanic spectra of Neon
SULTAN MEHMOOD (2004-06) Islamia University Bahawalpur, Pakistan
5. Structural properties of ferroelectric material- PbTiO3
SHAKILA AKHTAR, (2004-06) Islamia University Bahawalpur, Pakistan
6. Optical/electrical characteristics of semiconducting materials.
HADIA NOOR (2004-06) Islamia University Bahawalpur, Pakistan
7. Lattice properties of Spintronic materials CdMnHgTe, CdMnTe,CdHgTe,CdZnHgTe.
NOOR UL HUDA (2004-06) Islamia University Bahawalpur, Pakistan.
8. Comparison 0f 16-frame and 8-frame gated SPECT imaging and determination of left ventricular volumes and
ejection fraction ABDUL KARIM KHAN (2004-2006) Islamia University Bahawalpur, Pakistan.
9. Investigation of active traps in Si-AlxGa1-xAs (x = 0.3 to 1) Schottky diode using DLTS.
MUHAMMAD SHAHID (2005-07) Islamia University Bahawalpur, Pakistan
10. Characterization of electron trap centers in alpha irradiated highly doped n-type 4H-SiC.
HAFIZ SHAHID NOOR (2005-2007) Islamia University Bahawalpur, Pakistan
11. Deep level transient spectroscopy of as-grown low doped n-type 4H-SiC.
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FAISAL IQBAL (2005-2007) Islamia University Bahawalpur, Pakistan
12. Deep level transient spectroscopy of InGaP Schottky diode.
MUHAMMAD SHAKIL (2005-2007) Islamia University Bahawalpur, Pakistan
13. Influence of high nitrogen flux on crystal quality of Plasma-assisted MBE grown GaN
using Raman scattering data.
ISLAH UDIN (2005-2007) Islamia University Bahawalpur, Pakistan
14. Isochronal annealing study of n-type SiC by means of capacitance spectroscopy.
FARHANA JABEEN (2005-2007) Islamia University Bahawalpur, Pakistan
15. Study of electron traps in 4H/6H polytype n-SiC using deep level transient spectroscopy.
ANJUM RANI (2005-2007) Islamia University Bahawalpur, Pakistan.
16. Study of electrical properties of TiO2 deposited on n-silicon substrate by means of capacitance spectroscopy
ADNAN ALI (2006-2010), Islamia University Bahawalpur, Pakistan
17. InP related deep level defects in the near surface of InGaP layers grown by MOVPE.
IFTIKHAR AHMED LODHI (2006-2008) Islamia University Bahawalpur, Pakistan.
18. Study of interfacial levels at metal-insulator-semiconductor (Al/SrTiO3/n-Si ) interface using constant capacitance
DLTS technique; Maj Tahir ul Islam (2006-2008) Islamia University Bahawalpur, Pakistan.
19. Dielectric properties of SrTiO3 embedded in aluminum and n-silicon by means of capacitance measurement
MUHAMMAD IMRAN ARSHAD (2006-2008) Islamia University Bahawalpur, Pakistan
20. Characterization of semiconductor materials
IRSHAD AHMAD (2004-2008) Islamia University Bahawalpur, Pakistan.
21. Admittance spectroscopy of TiO2 layers grown on silicon substrate by MOCVD.
MUHAMMAD AMJAD MEHMOOD (2006-2008), Islamia University Bahawalpur, Pakistan.
23. DLTS study of thermally evaporated thin film of II-VI semiconductor compound, Mr. Hafiz Naeem ur Rehman,
(2007-2009) Islamia University Bahawalpur, Pakistan.
24 Investigation of dominant deep electron trap levels in zinc oxide layers grown along oxygen face, Mr. Muhammad
Ajaz un Nabi (2007-2009) Islamia University Bahawalpur, Pakistan.,
25. Deep level transient spectroscopy of zinc oxide grown along zinc face, Miss Zahida Batool (2007-2009), Islamia
University of Bahawalpur, Pakistan.
26. Characterization of polycrystalline silicon carbide layers grown on n-type Si by LPCVD, Mr. Khalid Mehmood (2007-
2009) Islamia University Bahawalpur, Pakistan.
27. Qualitative measurements of ZnO grown on O-Face and Zn-face, Mr. Muhammad Hussain (2007-2009) Islamia
University Bahawalpur, Pakistan.
28. Electrical properties of AlGaN structure, Syed Mansoor Ali (2007-2009) Islamia University of Bahawalpur, Pakistan.
29. Qualitative study of polytype SiC layers as a function of dopant level, Mr. Saifullah (2007-2009) The Islamia
University of Bahawalpur Pakistan.
30. Synthesis and study of structural properties of ZnO thin films, Samiya Balouch (2007-2009), The Islamia University
of Bahawalpur, Pakistan.
31. Surface Study of AlN epilayers grown on silcon (111) by MBE, Abdul Salam (2007-2009) The Islamia University of
Bahawalpur, Pakistan.
32. Surface study of GaN epilayers grown on silicon (111) by molecular beam epitaxy, Khalil Ahmad Khan (2007-2009)
The Islamia University of Bahawalpur, Pakistan.
Ph. D. RESEARCH SCHOLAR PRODUCED
1. Capacitance Spectroscopy of wide gap Semiconductors
IJAZ HUSSAIN ASGHAR. (2004-08) The Islamia University Bahawalpur, Pakistan
Ph. D. RESEARCH THESES UNDER SUPERVISION
1. Simulation and Characterization of conventional, Bifacial and Back-Contact Crystalline Silicon Solar Cells,
ADNAN ALI (2006-2011). The Islamia University Bahawalpur, Pakistan
2. Characterization of deep level defects in n-type Zinc Oxide layers grown by hydrothermal technique, HADIA NOOR
(2006-2011) The Islamia University Bahawalpur, Pakistan.
3. Synthesis and characterization of silicon carbide layers grown on silicon substrates by low pressure chemical vapor
deposition technique. FAISAL IQBAL (2007-2011) The Islamia University Bahawalpur, Pakistan
4. Properties of Deep level defects in the band gap of GaN by Capacitance Technique, MUHAMMAD IMRAN
ARSHAD (2007-2011) The Islamia University Bahawalpur, Pakistan.
MEMBER OF DISTINGUISHED SOCIETIES:
1. Life Member of Pakistan Society For Semiconductor Science & Technology (PS 3T)
2. Life Member Pakistan Physical Society (PPS)
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3. Pakistan Institute of Physics (PIP)
4. Member of Institute of Physics (IoP) London
5. Member Royal Microscopical Society, London.
COURSES ATTENDED:
1. First Post-Graduate Diploma Course (PGTC-I) In Computer
(July 18, 1993 To Jan. 17, 1994), CTC Islamabad, Pakistan
2. First Orientation Course On Physics
(June - July, 1981) Islamia University Bahawalpur, Pakistan.
WORKSHOP ATTENDED AS INVITED/KEYNOTE SPEAKER
1. One Day National Meeting on Nanotechnology Research in Pakistan August 3, 2010, University of Punjab, QAC,
Lahore, Pakistan.
2. 11th Symposium on Advanced Materials and One Day Workshop on Smart Materials, Aug 8-12, 2009
3. Two-Day International Seminar on Semiconductor Materials and Nano-Devices, (2-3) June, 2008, at The Islamia
University of Bahawalpur
4. 6th International Workshop and Training Course on Micro & Nano-Electronics and Photonics: April 9-13, 2007.
5. Tutorial Course & Symposium on Topics in Semiconductors
(April 17-19, 2000), Regent Plaza Hotel Karachi, Pakistan.
CONFERENCES ATTENDED AS SPEAKER
1. 2007 IEEE Regional Symposium on Microelectronics (3-6) December 2007, Penang, Malaysia.
2. 4th HONET Symposium 2007, Dubai (18-20) November 2007.
3. Second ICSSST 2006, Malaysia (4-6) September 2006, Terranganu , Malaysia.
4. 31st Nathiagalli International College On Physics And Its Contemporary Needs, (June 27 – July 08, 2006), Nathiagali.
5. 6th PIP International Conference 2006 (March 14-18), UET, Lahore.
6. Thirteenth International Conference on Microscopy of Semiconducting Materials (30 th March-4th April, 2003),
Churchill College University of Cambridge, UK
COLLEGES/SCHOOLS ATTENDED:
1. 31st Nathiagalli International College On Physics And Its Contemporary Needs,
(June 27 – July 08, 2006), Nathiagali, Pakistan
2. 3rd BCSPIN School On Condensed Matters
(June 01 - 14, 1991) Katmandu, Nepal.
3. 15th Nathiagali International College On Physics And Its Contemporary Needs,
(June 15 - 27, 1990), Nathiagalli, Pakistan
SEMINARS/WORKSHOPS ATTENDED:
1. Second Seminar On Topics On Semiconductor Science & Technology
(March 17, 1997), Q.A.U. Islamabad, Pakistan
2. Seminar On CD - ROM Technology And Its Applications
(May 31, 1994) American Centre Lahore, Pakistan
3. NIST-COMSTECH Workshop On Solar Cells
(Aug. 28 - Sep. 08, 1994), Islamabad, Pakistan
4. NIST-COMSTECH Workshop On Solar Cells
(June 28, July 07, 1987), Islamabad, Pakistan
SYMPOSIA/CONFERENCES ATTENDED:
1. Symposium on contemporary needs of Physics March 25-30, (2007), NCP, Quaid-e-Azam University, Islamabad.
2. Symposium on Physics research in North Carolina, USA, Feb 3 rd, 2007, UNC State University Rayleigh, NC.
3. Second ICSSST 2006, Malaysia (4-6) September 2006, Terranganu Malaysia.
4. 6th PIP International Conference 2006 (March 14-18), UET, Lahore.
5. Thirteenth International Conference on Microscopy of Semiconducting Materials (30 th March-4th April, 2003),
Churchill College University of Cambridge.
6. Tutorial Course & Symposium on Topics in Semiconductors
(April 17-19, 2000), Regent Plaza Hotel Karachi, Pakistan
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7. Third Symposium On Frontiers Of Physics
(April 26-28, 1992), Q.A.U. Islamabad, Pakistan
8. Sixth Symposium On Frontiers Of Physics
(December 16-18, 1997), Q.A.U. Islamabad, Pakistan
9. Fourth Pakistan Institute of Physics Conference
(April 04 - 06, 1994), Islamia University, Bahawalpur, Pakistan
SEMINARS/WORKSHOPS ORGANIZED:
1. Two-Day International Seminar on Semiconductor Materials and Nano-Devices, (2-3) June, 2008, at Islamia
University of Bahawalpur.
COUNTRIES VISITED
1. United States of America ( 2010)
2. United States of America ( 2008-09)
3. Malaysia (2007)
4. Dubai (2007)
5. United States of America (2007)
6. Malaysia (2006)
7. England (2003)
8. France (2002-2003)
9. Germany (1998-1999)
10. Nepal (1991)
PUBLICATIONS (updated):
International
1. GaN based Materials high temperature thermoelectric devices and systems,
Na Lu, Elisa Hurwitz, Asghar M. Hashmi, Andrew Melton, Mateusz Orocz, Muhammad Jamil and Ian Ferguson,
Journal of Electronic Materials, Special Issue on Thermoelectric, (2010) (In Press).
2. Synthesis and Characterization of Graphene on Si (111) Substrate
Na Lu, M. Asghar, W. Stiputra, D. Tanya, Y. Naili, Y. Zhang and Rapheal Tsu,
International Conference on Supperlattice Nano-structure and Nano-devices (2010) Proceeding.
3. Study of electrical enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
H. Ashraf, M. Imran Arshad, S.M. Faraz, Q. Wahab, P.R. Hageman and M. Asghar
J. Appl. Phys. 108, 103708 (2010).
4. Interface state density of free standing GaN Schottky diodes
S M Faraz, H Ashraf, M Imran Arshad, P R Hageman, M Asghar and Q Wahab
Semicond. Sci. Technol. 25, 095008 (2010).
5. Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide
Schottky devices,
Hadia Noor, P. Klason, S. M. Faraz, O. Nur, Q. Wahab, M. Willander, and M. Asghar
J. Appl. Phys 107,103717 (2010).
6. New trends in wide bandgap semiconductors: Synthesis and characterization of single cyrstalline 3C-SiC by low
pressure chemical deposition technique.
M. Asghar, F. Iqbal, Adnan Ali, A. Mehmood, M. Yasin A. Raja, Awad. S. Gerges, S. Baang and M.A. Hasan
Key Engineering Materials, 442 , 195 (2010).
7. Time-delayed transformation of deep level defects in hydrothermally grown ZnO layers
Hadia Noor, P. Klason, O. Nur, Q. Wahab, M. Asghar and M. Willander
J. Appl. Phys 105,123556 (2009).
8. Modeling simulations of Pd/n-ZnO Schottky diode and its comparison with measurements
S. Faraz, Hadia Noor, M. Asghar, M. Willander and Q. Wahab
Advanced Materials Research, 79-82 1317(2009).
9. Post-annealing modification in structural properties of ZnO thin films on p-type Si substrate deposited by evaporation
M. Asghar, Hadia Noor, M.S. Awan, S. Naseem and M.-A Hasan
Mater Sci. in Semicond Processing 11, 30( 2008)
10. Properties of dominant electron trap center in n-type SiC epilayers by means of capacitance spectroscopy
M. Asghar, I. Hussain, H.S. Noor, Q. Wahab, F. Iqbal and A. S. Bhatti
J. Appl. Phys., 101. 073706 (2007)
11. Study of electrical properties of Al/SrTiO3/n-Si interfaces using capacitance spectroscopy
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Tahir-ul-Islam, Adan Ali, Imran Arshad, P. Muret and M. Asghar
IEEE/Explorer Proceedings of HONET 4th Symposium, 18-20 November, 2007, Dubai object
identifier:10.1109/honet.2007.4600279
12. Characteristics of ZnO thin films deposited RF operated thermal evaporation
M. Asghar, I. Hussain, Hadia Noor, M. S. Awan and M.-A. Hasan
Proceedings 2007 IEEE Regional Symposium on Microelectronics, Penang, Malaysia
13. Influence of high nitrogen flux in crystal quality of plasma-assisted MBE grown GaN layers using Raman
Spectroscopy: Part-II
M. Asghar, I. Hussain, Islahuddin and F. Saleemi
AIP Conf Proc. Vol 909: The 2nd ICSSST 2006 Malaysia, pp 105-11
14. Properties of Ga1-x Mnx N epilayers grown by plasma-assisted molecular beam
epitaxy using optical techniques
M. Asghar, I. Hussain, M. Shahid, E. Bustarret, J. Cibert, S. Kuroda , S. Marcet and
H. Mariette
J. Cyrstal Growth, 296, 174(2006).
15. Properties of Ga1-x Mnx N epilayers grown by plasma-assisted molecular beam
epitaxy using Raman spectroscopy
M. Asghar, I. Hussain, F. Saleemi, E. Bustarret, J. Cibert, S. Kuroda , S. Marcet,
H. Mariette, and A. S. Bhatti
Mater. Sci. Engg. B133, 102 (2006)
16. Luminescence properties of hole traps in homojunction gallium nitride diodes grown
by metal organic vapour phase epitaxy
M. Asghar, P. Muret, I. Hussain, B. Beaumont, P. Gibart , M. Shahid
Mater. Sci. Engg. B 130, 173 (2006).
17. Influence of high nitrogen flux on crystal quality of MBE grown GaN layer using Raman spectroscopy.
M. Asghar, I. Hussain , M. Shahid, E. Bustarret, S. Kuroda, H. Maiterette and S. Macet
Int. J. Mater. Sci. 1, 103 (2006).
18. Field dependent transformation of electron traps in GaN p-n diodes grown by
metal-organic chemical vapour deposition
M. Asghar, P. Muret, B. Beaumont, P. Gibart
Mater. Sci. Eng. B 113, 248(2004).
19. Identification of nitrogen interstitials in GaN p-n diodes using deep level transient spectroscopy
M. Asghar, P. Muret, B. Beaumont, P. Gibart
Inst. Phys. Ser. 180, 343(2003).
20. Properties of Interface States of Isotype GaAs/In(Ga,As)P/GaAs Heterojunctions Grown by
Metalorganic-Phase-Epitaxy
P. Krispin, M. Asghar , A. Knauer and H.Kostial
J. Crystal Growth, 220, 220(2000).
21. Capacitance spectroscopy of Si-doped GaAs grown by atomic hydrogen-assisted
molecular beam epitaxy.
P. Krispin, M. Asghar, H. P Schonherr, H. Kostial, R. Notzel and K. H. Ploog
Inst. Phys. Conf. Series, 166, ‘COMPOUND SEMICONDUCTORS’ Chap.3,
155(2000).
22. Interface Properties of Isotype (In,Ga)P/GaAs heterojunctions Grown by Metalorganic Vapor
Phase Eptaxy on GaAs
P. Krispin, M. A. Hashmi, A. Knauer, H. Kostial and E.Wiebicke
www.pdi-berlin.de/Scientific/Report, 24 (1999).
23. Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy
P. Krispin, M. Asghar , H. Kostial, and R. Hey
Physica B, 273-274, 693 (1999).
24. Deep electronic states near the surface of (In,Ga)P layers grown by MOVPE on GaAs
P. Krispin, M. Asghar and A. Knauer
Physica B, 273-274, 815(1999).
25. Deep Level Defects Near the Surface of p-GaAs layers Grown by Molecular Beam Epitaxy.
M.A. Hashmi, P. Krispin, H. Kostial, and R. Hey
www.pdi-berlin.de/Scientific/Report, 30(1998).
26. C-T Measurements on Linearly Graded Ge Diodes
M. Asghar, N. Zafar and M. Afzal
Mod. Phys. Lett. B 9, 531(1995).
27. Deep Levels in Alpha Irradiated Platinum Doped n-Type Silicon
M. Asghar, N. Babar and M. Zafar Iqbal
J. Appl. Phys. 76, 2553(1994).
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28. Beta Radiation Induced Conductivity of Poly(2-vinylepyridene) Cobalt Complex
M. H.Chohan, M. Asghar and T. Idris
J.Mat. Sci. Lett. 13, 1426 (1994).
29. Characterization of Deep Level Introduced by Alpha Radiation in n-Type Silicon
M. Asghar, M. Zafar Iqbal, and N. Zafar
J. Appl. Phys. 73, 3698(1993).
30. Study of Alpha Radiation Induced Deep Levels in p-Type Silicon
M. Asghar, M.Zafar Iqbal and N.Zafar
J. Appl. Phys. 73, 4240(1993).
31. Delayed Radiation Induced Conductivity in Ni-Polymethacrylate:II
Farid A.Khawaja, M.M.Pasha and M. Asghar
Polymer Degrad. Stab. 41, 17 (1993).
32. Time-Dependent Delayed Radiation Induced Conductivity in Ni-Polymethacrylate:III
Farid A. Khawaja, M. M. Pasha, M. Asghar and G. S. Bhatti
Polymer Degrad. Stab. 42, 81 (1993).
33. Conductivities of poly(2-vinylepyridene) Matrix Composites
M.H.Chohan, M. Asghar, M.Mazhar and U.Rafiq
Mod. Phys. Lett. B 6, 1755(1992). SINGAPORE.
34. Electron Capture Cross-section of Platinum Donor Level in Silicon
N.Babar, M. Asghar and M.Zafar Iqbal
Semicond. Sci. Technol. 5, 1133(1990),
35. Deep Levels in Alpha Irradiated n-Silicon
M.Zafar Iqbal, N.Zafar and M. Asghar
‘THE PHYSICS OF SEMICONDUCTORS’,Vol.I, World Scientific Singapore,
573 (1990)
National
1. Mechanism of conduction in poly 2 vinylpyridine
Uzaira Rafique, M. Mazhar, M. A. Hashmi. M. Bhatti, S. Ali and Farid A Khwaja
J. Chem. Soc. Pak., 28, 27 (2006).
2. Study of electrical properties of isotype GaAs/(In,Ga)P/GaAs heterointerfaces grown by MOVPE
by capacitance-voltage and DLTFS techniques.
M. Asghar , P. Krispin, A. Knauer and H.Kostial
J. Res. Sci., 13, 1 (2002).
3. Identification of the interfacial states at the MBE grown Si-doped GaAs/GaAs(H) structure using
capacitance spectroscopy
M. Asghar and P. Krispin
J. Pure & Appl. Sciences, 20, 35(2001).
4. DLTFS study of antisite defects near surface of highly doped p-GaAs layers grown molecular
beam epitaxy
M. Asghar and P. Krispin
J. Pure & Appl. Sciences 20, 107(2001).
5. Study of interface states in the metal-semiconductor junction of Be-doped GaAs grown by
molecular beam epitaxy by DLTFS
M. Asghar, P. Krispin, M.H. Shaheen, and M.S. Naveed
J. Res. Sci., 11, 18(2001).
6. Detection of Ga-antisite deep level defect near the surface of MBE grown highly Be-doped GaAs layers
M. Asghar, P. Krispin, , H. Kostial, and R. Hey
J. Nat. Sci. Math., 41, 165(2001).
HONORS & AWARDS:
1. SILVER MEDALLIST in M.Sc. Examination
2. Won College and University Tournaments of Cricket and Football
3. Awarded Productivity Allowance by PCST for the year 2000-2001 at the Commutative IMPACT FACTOR: 28
4. Awarded Productivity Allowance by PCST for the year 2005-2006 at the IMPACT FACTOR: 18.6
5. IMPECT FACTOR (2007-2008) by PCST 28.
PRODUCTIVITY AWARDS
1. Year 2002
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2. Year 2004
POSTDOCTORAL RESEARCH WORK (International Awards)
1. Worked as Senior Research Associate at Department of Physics and Optical Sciences, University of North Carolina
Charlotte, NC, USA (05-Jan-2010 to 15-July-2010)
2. Worked as Fulbright Scholar at Department of Electrical & Computer Engg, University of North Carolina Charlotte,
NC, USA (01-Sep-2008 to 30-June-2009)
3. Worked as Guest Scientist at Charlotte Institute of Research, University of North Carolina Charlotte, NC, USA (20-
Jan-2007 to 23-Feb-2007)
4. Worked as a S&T Postdoc Fellow at CNRS-LEPES, Grenoble FRANCE (Sept 20, 2002 to Sept 03, 2003) Supervisor:
P. Muret.
5. Worked as GUEST SCIENTIST at Paul Drude Institute Berlin, Germany for one year (June 19, 1998, to June18,
1999).
INTERNATIONAL LINKAGE/COLABORATIVE PROGRAMS
1. Linköping University Sweden, Sweden (2005-2010)
2. LEPES-CNRS Grenoble France
3. Paul Drude institute for Solid State Electronics, Berlin Germany
4. Charlotte Research Institute, University of North Carolina Charlotte, NC, USA.
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