MINGHWEI HONG
Patents
1. "Apparatus Comprising A Laser Adapted for Emission of Single Mode Radiation Having Low
Transverse Divergence", Y. K. Chen, M. Hong, M. C. Wu, Granted, Patent Number 5,088,099, Feb.
11, 1992.
2. "Method of Making a Semiconductor Laser", Y. K. Chen, M. Hong, and M. Wu, Granted, Patent
Number 5,208,183, May 4, 1993.
3. "Semiconductor Surface Emitting Laser Having Enhanced Optical Confinement", K. D. Choquette, R.
S. Freund, and M. Hong, Granted, Patent Number 5,212,701, May 18, 1993.
4. "Method of Making an Article Comprising a Periodic Heteroepitaxial Semiconductor Structure", Y. K.
Chen, M. Hong, J. P. Mannaerts, and M. Wu, Granted, Patent Number 5,213,995, May 25, 1993.
5. "Process for Removing Surface Contaminants from III-V Semiconductors", K. D. Choquette, R. S.
Freund, M. Hong, and J. P. Mannaerts, Filed in November, 1992, and Granted, Patent Number
5,275,687, January 4, 1994.
6. "Semiconductor Surface Emitting Laser Having Enhanced Optical Confinement", K. D. Choquette, R.
S. Freund, and M. Hong, Granted, Patent Number 5,348,912, September 20, 1994.
7. "Vertical Cavity Semiconductor Laser", K. D. Choquette, R. S. Freund, M. Hong, and D. Vakhshoori,
Granted, Patent Number 5,559,053, September 24, 1996. Filed April 14, 1994 (Patent Submission No.
107157).
8. "Article Comprising Ex-situ Deposited Oxide on GaAs-Based III-V Semiconductor", M. Hong (IDS
number 111182, submitted by E. E. Pacher on 4/3/1996 for open patentability submissions.)
9. "Article Comprising A Gallium Oxide Layer On A GaAs-Based Semiconductor, And Method of
Making the Article", M. Hong, J. Kwo, J. P. Mannaerts, M. Passlack, F. Ren, G. J. Zydzik, granted,
Patent Number 5,821,171, October 13, 1998. Filed Mar.22, 1995 (Application No. 408,678).
10. "GaAs-Based MOSFET, and Method of Making Same", A. Y. Cho, M. Hong, J. R. Lothian, J. P.
Mannaerts, and F. Ren, patent number 5,903,037, May 11, 1999. (76-15-5-4-20 by E. E. Pacher, filed
on 2-14-97).
11. “Article comprising an oxide layer on GaN, and method of making the article”, W. Hobson, M. Hong,
J. R. Lothian, J. P. Mannaerts, F. Ren, granted, Patent Number 5,912,498, June 15, 1999. (9-16-7-5-23
by E. E. Pacher (filed on 10-10-1997)),
12. “Article comprising an oxide layer on a GaAs-based semiconductor body, and method of making the
article”, M. Hong, J. Kwo, and D. W. Murphy, granted, Patent Number 5,962,883, Oct. 5, 1999. (17-
14-16 by E. E. Pacher (filed on June 8 1998)).
13. "Method of Making An Article Comprising An Oxide Layer On A GaAs-Based Semiconductor Body",
Y. K. Chen, A. Y. Cho, W. S. Hobson, M. Hong, J. M. Kuo, J. R. Kwo, D. W. Murphy, and F. Ren,
granted, U.S. Patent Number 6271069, Aug. 7, 2001. (Chen 21-87-11-Hong 18-10-15-17-25,
submitted by E. E. Pacher July 21, 1998).
14. “High dielectric constant gate oxides for Silicon-based devices”, M. Hong, A. R. Kortan, J. R. Kwo,
and J. P. Mannaerts, granted, U.S. Patent Number 6404027, June 11, 2002. (Hong-Kortan-Kwo-
Mannaerts 22-12-19-9, submitted by E. E. Pacher (Wendy Koba) on February 7, 2000, IDS # 120627).
15. "Article Comprising An Oxide Layer On A GaAs or GaN-Based Semiconductor Body", M. Hong, A.
R. Kortan, J. Kwo, and J. P. Mannaerts, granted, U.S. Patent Number 6469357, Oct. 22, 2002. (Hong-
Kortan-Kwo-Mannaerts 19-10-16-6 was submitted by E. E. Pacher with a submission No. 115652 on
June 25, 1998, GaAs MOS structure with crystalline oxide layer.)
16. “Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, M.
Hong, J. M. Kuo, J. Kwo, J. P. Mannaerts, and Y. C. Wang, granted, U.S. Patent Number 6495407,
Dec. 17, 2002. (Hong, Kuo, Kwo, Mannaerts, Wang, 20-11-17-7-4 submitted by E. E. Pacher on Sept.
18, 1998.) [on the slow heating rate of activation and after-metallization annealing in forming gas]
should receive $1,000 10-27-98. The applicants have acquired the right to the European patent under
an agreement dated 180998.
17. Chen-Cho-Hobson-Hong-Kuo-Ren 10-73-6-14-7-19 by E. E. Pacher (filed on 10/31/96) "Article
Comprising a GaAs-Based MOS-FET and Method of Making the Article" [will remove claims 1-3 and
retain and modify the rest of the claims regarding the MOSFET processing, and add Kwo and Murphy
as co-inventors, June 5, 1998] An American Express travel check of $100 was received for buying-out
program. On 9-21-99, we have acquired the right to the European patent.
18. "Article Comprising A Gallium Oxide Layer On A GaAs-Based Semiconductor, And Method of
Making the Article", M. Hong, J. Kwo, J. P. Mannaerts, M. Passlack, F. Ren, G. J. Zydzik, Filed
Mar.22, 1995 (Appl. No. 408,678), and granted, Patent Number 5,821,171, October 13, 1998. (10-7-3-
3-15-41) and Amended on 05/31/1995 by E. E. Pacher, [teaching deposition conditions for GGG,
essentially to avoid oxygen contamination]asking Kathy (7341) on Oct.12, 1998, $100 was received
for buying-out program.
19. "GaAs-Based MOSFET, and Method of Making Same", A. Y. Cho, M. Hong, J. R. Lothian, J. P.
Mannaerts, and F. Ren (76-15-5-4-20 by E. E. Pacher (filed on 2-14-97), and granted, patent number
5,903,037, May 11, 1999. [will file a divisional claim separating the article and the method on
September 9, 1998] An American Express travel check of $100 was received on 9-25-98,
20. “Article comprising an oxide layer on GaN, and method of making the article”, W. Hobson, M. Hong,
J. R. Lothian, J. P. Mannaerts, F. Ren (9-16-7-5-23 by E. E. Pacher (filed on 10-10-1997) $1,000 was
received), and granted, Patent Number 5,912,498, June 15, 1999.
21. “Article comprising an oxide layer on a GaAs-based semiconductor body, and method of making the
article”, M. Hong, J. Kwo, and D. W. Murphy, filed on June 8 1998, and granted, Patent Number
5,962,883, Oct. 5, 1999. (17-14-16 by E. E. Pacher (filed on June 8 1998)). asking Kathy (7341) on
Oct.12, 1998
Anselm 4-95-54-21-8-1 Not Available W W Koba
Article Comprising A GaN/Rare Earth Oxide Epitaxial Structure
Chen 10-73-6-14-7-19 10/31/1996 J F McCabe
GaAs-Based MOS-FET, And Method Of Making The Article
Chen 21-87-11-18-10-15-17-25 07/24/1998 J F McCabe
Method Of Making An Article Comprising An Oxide Layer On
A GaAs-Based Semiconductor Body
Hong 20-11-17-7-4 09/18/1998 E E Pacher
Method Of Making An Article Comprising An Oxide Layer On
A GaAs-Based Semiconductor Body
Hong 19-10-16-6 11/12/1998 R J Botos
Article Comprising An Oxide Layer On A GaAs or GaN-Based
Semiconductor Body
Hong 22-12-19-9 02/07/2000 W W Koba
High Dielectric Constant Gate Oxides For Silicon-Based
Devices
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Quarterly IP-Law Patent Snapshot
for
Minghwei Hong
4/2/2001
(For questions, please contact the responsible attorney)
Recent Issued Patents (3 Years)
Case Patent No Issue Date Attorney
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Hong 10-7-3-3-15-41 5821171 10/13/1998 J A Garceran
Article Comprising A Gallium Oxide Layer On A GaAs-Based
Semiconductor, And Method Of Making The Article
Cho 76-15-5-4-20 5903037 05/11/1999 E E Pacher
GaAs-Based MOSFET, And Method Of Making Same
Hobson 9-16-7-5-23 5912498 06/15/1999 R J Botos
Article Comprising An Oxide Layer On GaN
Hong 17-14-16 5962883 10/05/1999 R J Botos
Article Comprising An Oxide Layer On A GaAs-Based Semiconductor
Body, And Method Of Making The Article
Choquette 10-11-13-15 (Mailed) 06/24/1996 by P. V. Wilde
"Vertical Cavity Semiconductor Laser "
.LI
Choquette 8-9-11-12 (Mailed) 06/06/1995 D. I. Caplan (J. A. Oliff)
"Vertical Cavity Semiconductor Laser "
.LI
Choquette 9-10-12-13 (Mailed) 06/14/1995 D. I. Caplan (B. S. Schneider)
"Vertical Cavity Semiconductor Laser "
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