Prior Art Search Report - Lite sheet
Team Knoura
Date: 25/10/2011
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Index
Sr. No. Title Page No.
1.0 Task Background 03
1.1 Assumptions and Information sources used in project 04
1.2 Result Summary 05
1.3 Conclusions 09
1.4 Search Glossary 11
1.3 Relevant Patent documents 14
1.2 Non patent information 21
1.0 Task Background
The Invention is related to a bare die led in a sandwich construction.
The die has electrical contacts on the bottom surface and then is
encapsulated through manufacturing processes. In accordance with an
aspect of the invention, a method is provided for forming a sheet of
light active material. A first substrate is provided for the base electrical
pattern to be applied. A pattern of light active semiconductor elements
are formed on the surface. The light active semiconductor elements
have an anode and a cathode located on the same side of the die. An
adhesive is introduced to the die to secure it in place and prevent it
from moving on the base electrical pattern. The entire assembly is then
encapsulated in a clear non-conductive silicone material. A remote
phosphor can be applied to modify the light wavelength above the
optically clear layer just applied. Thus, a solid-state sheet of light active
material is formed.
Essentially, the most important aspect of this disclosure is that the
anode and cathode contacts lie on the same side of the die.
1.1 Assumptions and Information sources used in project
In conducting the assignment, the disclosure from the client was used
as preliminary background information for carrying out the assignment.
Patent Prior Art Search was conducted using keywords including
synonyms and IPC/US classifications. Results were read, relevant
documents were handpicked for detailed scrutiny and analysis.
Google patents, free patents online, Total Patent, USPTO databases
were the primary source of patent information. A web search was
carried out on Google search engine. Our primary focus has been to find
granted patents/ applications from any of the patent offices in the
world. Besides, the information in the patent arena, we have performed
a search for literature such as commercial products/advertisements,
brochures, journals, publications etc on the Google search engine.
1.2 Result Summary
Based on the details of the invention, nine patent references were
identified which are related to the invention. Further, we are mailing the
electronic copies of the patent PDF documents along with this report for
your review.
The nine most pertinent references will be described below in greater
detail.
WIPO Pub. No. WO 2011/018689 A1 to Doan et al. discloses a A
light emitting diode (LED) system includes a substrate, an application
specific integrated circuit (ASIC) on the substrate, and at least one light
emitting diode (LED) on the substrate in electrical communication with
the application specific integrated circuit (ASIC). The light emitting
diode (LED) system can also include a polymer lens, and a phosphor
layer on the lens or light emitting diode (LED) for producing white light
In addition, multiple light emitting diodes (LEDs) can be mounted on
the substrate, and can have different colors for smart color control
lighting. The substrate and the application specific integrated circuit
(ASIC) are configured to provide an integrated system having smart
functionality. In addition, the substrate is configured to compliment and
expand the functions of the application specific integrated circuit (ASIC),
and can also include built in integrated circuits for performing additional
electrical functions.
U.S Pub. No. US 2011/0215342 A1 to Oliver discloses methods and
structures for wafer-level packaging of light-emitting diodes (LEDs). An
array of LED dies is mounted on a packaging substrate. The substrate
may include an array of patterned metal contacts on a front side. The
metal contacts may be in electrical communication with control logic
formed in the substrate. The LEDs mounted on the packaging substrate
may also be encapsulated individually or in groups and then singulated,
or the LEDs mounted on the packaging substrate may be integrated
with a micro-mirror array or an array of lenses.
U.S Pub. No. US 2008/0017870 A1 to Diamantidis discloses a
semiconductor light-emitting means comprising a transparent substrate,
on which light-emitting diodes are arranged. These and electrodes used
for contacting them are transparent.
U.S Pub. No. US 2005/0151136 A1 to Liu discloses a method for
forming an LED includes bonding a heat generating region of a light
emitting device to a heat conductive substrate, so as to define a
composite structure and so as to substantially enhance the heat
dissipation. Enhancing heat dissipation from the device facilitates
operation at higher currents, so as to provide greater light output
therefrom.
U.S Pub. No. US 7,982,226 B2 to Lee et al. discloses a reflection type
optical sensor device including: a semiconductor light source being
formed by providing a light emitting region on a predetermined region
of a substrate; and a photo-detection element being integrated on the
same substrate as the substrate where the semiconductor light source is
formed to surround an outer circumferential surface of the
semiconductor light source, and including a light receiving region. When
the light emitted from the semiconductor light source is reflected by an
external object, the photo-detection element may detect the light to
sense the object. Through this, it is possible to reduce cost and ensure
a small size. Also, the photo-detection element is constructed to
surround the outer circumferential surface of the semiconductor light
source, and thus more accurately detect the light.
Japanese Pub. No. JP 2009-123804 A to Nakajima discloses a
semiconductor that includes: a solid-state relay having a first light-
emitting element, a light trigger device for receiving light from the first
light-emitting element, and a translucent resin for sealing the first
light-emitting element and the light trigger device; a bidirectional input-
type photocoupler having second and third light-emitting elements
connected in reverse parallel, a phototransistor for receiving light from
the second and third light-emitting elements, and the translucent resin
for sealing the second and third light-emitting elements and the
phototransistor; and a light shielding wall for light-shielding the solid-
state relay and the bidirectional input-type photocoupler from each
other. The solid-state relay and the bidirectional input-type
photocoupler are integrated into one package while light-shielded from
each other by the light shielding wall.
Chinese Pub. No. CN 101300687 A to Chandra discloses a kind of
phosphorus carried on the course of LED photic wavelength conversion.
Test LKD fasciolar associated color temperature (CCT), and launch and
pack it into the container according to its color. Install LED in the single
container on single base in order to form the array of LED. Make
various board of the flexible encapsulant (for example silicone) full of
one or more phosphorus, among them each board all have different
colors to change properties. Put the appropriate board on the base LED
installed on the array, and encourage LED. Measure photic CCT got
finally. If CCT is acceptable, then presses the permanent stratum of the
phosphor plate onto LED and base. Laminate and seal each LED in order
to protect LED to make it avoid pollutant and damage. Separate LED in
LED array on the base. Through choosing different phosphor plates for
each containers of LED, CCT that is got finally is very even on all
containers.
U.S Pub. No. US 2011/0204391 A1 to Lerman et al. discloses a solid
state light sheet and method of fabricating the sheet. In one
embodiment, bare LED chips have top and bottom electrodes, where the
bottom electrode is a large reflective electrode. The bottom electrodes
of an array of LEDs (e.g., 500 LEDs) are bonded to an array of
electrodes formed on a flexible bottom substrate. Conductive traces are
formed on the bottom substrate connected to the electrodes. A
transparent top substrate is then formed over the bottom substrate.
Various ways to connect the LEDs in series are described along with
many embodiments. In one method, the top substrate contains a
conductor pattern that connects to LED electrodes and conductors on
the bottom substrate.
Japanese Pub. No. JP 2010-272721 A to Nagai discloses a device
including: a red color laser element including an n-type cladding layer,
an active layer and a p-type cladding layer; an infrared laser element
formed so that the red color laser element is apart by a division groove,
including an n-type cladding layer, an active layer and a p-type cladding
layer; a first p-side electrode on the p-type cladding layer; a second p-
side electrode on the p-type cladding layer; and a sub-mount for firmly
fixing the p-side electrodes. When the width of the first p-side electrode
is defined as W1, and the width of the second p-side electrode is
defined as W2, relationship: W1>W2 is satisfied, and an average strain
derived from lattice misfits due to the n-type cladding layer and the p-
type cladding layer of the infrared laser element is larger than that
derived from lattice misfits due to the n-type cladding layer and the p-
type cladding layer of the red color laser element.
Conclusions
1.3
As discussed above, the prior art search identifies several features of
the present invention in patent references. The prior art is likely to raise
a question with regards to non-obviousness at the very least, if a utility
patent application were to be filed with the USPTO in the invention’s
present form. We suggest that if you decide to proceed, you give
careful attention to the references identified and create a list of
drawbacks/limitations of each of these pre-existing inventions. This will
form the basis of any substantial advantages your invention may posses
over the cited prior art of this report. Furthermore, it may also benefit
in negating any arguments if they are made by the Patent Office while
citing the following prior art against your invention on novelty or non-
obviousness grounds.
With regards to the one single concept of the anode and cathode being
positioned on one side of the backing substrate or PCB, it can be said
that the feature is already mentioned vide Patent WO 2011/018689 A1
(See Fig. 5A and Paragraphs [0036]-[0037]). However, if there is a
substantial advantage by positioning it (such as efficient heat
dissipation, ease of manufacture, reduced space etc) in this fashion
compared to the prior art, it is suggested that the advantage be
brought out in the specification of the application filed. This will work in
the favor of the applicant since the applicant stands a chance to later
argue to most examiners queries over the fact that his invention is
substantially advantageous and improved over prior art systems and
methods. The patent analyst recommends amending the claims to
better suit and bring out the advantages rather than recite most of what
is already mentioned in the prior art.
Overview of Patent citations with relevance to the invention
Sl No U.S. Pat/Pub. Publication Title Assignee
No. Date
1 WO 2011/018689 2011-02-17 Smart integrated Semileds
A1 semiconductor Optoelectronics
light emitting Co., Ltd. [Cn/
system including Cn]; 3f, No. 11
light emitting Ke Jung Rd.,
diodes and Chu-Nan Site,
application Hsinchu, Science
specific Park, Chu-Nan
integrated 350, Miao-Li
circuits (ASIC) County (Tw).
2 US 2011/0215342 2011-09-08 LED packaging Oliver Steven D
A1 with integrated
optics and
methods of
manufacturing
the same (en)
3 US 2008/0017870 2008-01-24 Semiconductor Diamantidis Georg
A1 light-emitting
means and
light-emitting
panel comprising
the same (en)
4 US 2005/0151136 2005-07-14 Light emitting Liu Heng
A1 diode having
conductive
substrate and
transparent
emitting surface
(en)
5 US 7,982,226 B2 2011-07-19 Reflection type Gwangju Institute
optical sensor Of Science And
device (en) Technology,
Gwangju,
Republic Of Korea
6 JP 2009-123804 A 2009-06-04 Semiconductor Sharp Corp
device,
semiconductor
device
manufacturing
method, power
control device,
and electronic
apparatus and
module (en)
7 CN 101300687 A 2008-11-05 Pigeonhole the Koninkl Philips
membrane of Electronics Nv
encapsulant
including
phosphorus in
LED upper strata
(en)
8 US 2011/0204391 2011-08-25 Solid state light Quarkstar, LLC,
A1 sheet or strip Las Vegas,
having cavities Nevada, United
formed in top States Of America
substrate (en)
9 JP 2010-272721 A 2010-12-02 Two-wavelength Panasonic Corp
semiconductor
laser device (en)
1.4 Search Glossary
Search Terms used-
Among other things, the following English key words and their logical variations were used
for conducting prior art search:
● led/light emitting diode/glow/bright/lumen/emit/radiance
● base/bottom/top/upper/lower/above/below/first/second/same/one
● substrate/material/element/metal/terminals/wire
● filament/copper/zinc/tungsten
● wavelength/frequency/spectrum/color
● red/green/white/blue
● electrical/contacts/connection/anode/cathode/positive/negative
● series/parallel/star/bus
● board/circuit/ink/printed/silk/etch/PCB
● p-n/n-p-n/semiconductor/diode/junction/node/solid-state
● bare/naked/die
● phosphor/silicon/silicone/ Polyethylene terephthalate/plastic/thermoplastic
● adhesive/bond/stick/glue/epoxy/resin
● encapsulate/cover
● transparent/clear/lucid
● heat/thermal/energy/power/source
● dissipate/drain/sink/remove
● reflector/opaque/lens
● conduct/radiate/convection/non-conduct/semi-conduct
● secure/protect
● monochromatic/phase-shift/uniform/similar/same/one
● device
Patent Classification Used
IPC Classification:
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES
NOT OTHERWISE PROVIDED FOR
H01L 27/15 including semiconductor components with at least one
potential-jump barrier or surface barrier, specially adapted for light
emission
H01L 31/12 structurally associated with, e.g. formed in or on a common
substrate with, one or more electric light sources, e.g.
electroluminescent light sources, and electrically or optically coupled
thereto
H01L 33/00 Semiconductor devices with at least one potential-jump
barrier or surface barrier specially adapted for light emission; Processes
or apparatus specially adapted for the manufacture or treatment thereof
or of parts thereof; Details thereof
US Classification:
257 ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-
STATE DIODES)
257 /79 INCOHERENT LIGHT EMITTER STRUCTURE
257 /81 With specific housing or contact structure
257 /88 Plural light emitting devices (e.g., matrix, 7-segment array)
257 /98 With reflector, opaque mask, or optical element (e.g., lens,
optical fiber, index of refraction matching layer, luminescent material
layer, filter) integral with device or device enclosure or package
257 /99 With housing or contact structure
257 /100 Encapsulated
Search Logic used in various Patent and Non Patent databases:
Various search techniques such as Nested Boolean search, Phrase Searching, Synonyms
and Truncation searching, Patent class search, citation searching etc are used. Some of the
search string used is mentioned below
Patent Search String No of Hits
Description((LED OR (light W/2 emitting W/2 diode)) AND (adhesi! 49268
OR bond OR glue OR stick OR epoxy OR resin)) AND (IPC-MAIN-CL
(H01L 31/12) OR IPC-MAIN-CL(H01L 27/15) OR IPC-MAIN-CL(H01L
33/00))
Description((LED OR (light W/2 emitting W/2 diode)) AND (same W/2 1102
side) AND (adjacent AND NOT oppos!)) AND (IPC-MAIN-CL(H01L
31/12) OR IPC-MAIN-CL(H01L 27/15) OR IPC-MAIN-CL(H01L 33/00))
(emitting W/2 device) AND (first W/2 substrate) AND (heat W/2 sink) 707
AND (bottom AND NOT top)
((emitting W/2 device) AND (first W/2 substrate) AND (heat W/2 96
sink)) AND phosphorus AND anode AND cathode
Description((LED OR (light W/2 emitting W/2 diode)) AND (same W/2 89
side) AND (anode OR cathode OR positive OR negative)) AND IPC-
MAIN-CL(H01L 31/12)
((emitting W/2 device) AND (first W/2 substrate) AND (heat W/2 86
sink)) AND phosphorus AND anode AND cathode AND bottom
Claims((emitting W/2 device) AND (first W/2 substrate) AND (heat 73
W/2 sink))
((emitting W/2 device) AND (first W/2 substrate) AND (heat W/2 71
sink)) AND phosphorus AND anode AND cathode AND bottom AND
transparent AND silicon!
(emitting W/2 device) AND (first W/2 substrate) AND (heat W/2 sink) 65
AND (bottom AND NOT top) AND silicon! AND phosphorus
(emitting W/2 device) AND (first W/2 substrate) AND (heat W/2 sink) 25
AND (bare W/2 die)
Description((LED OR (light W/2 emitting W/2 diode)) AND (same W/2 13
side) AND (adjacent AND NOT oppos!) AND (anode OR cathode OR
positive OR negative)) AND IPC-MAIN-CL(H01L 31/12)
9
Abstract((LED OR (light W/2 emitting W/2 diode) AND silicon! AND
phosphorus AND single)
Description((emitting W/2 device) AND (first W/2 substrate) AND 6
(heat W/2 sink) AND (bottom AND NOT top) AND silicon! AND
phosphorus) AND (US-Main(257#88) OR US-Main(257#99))
Claims((emitting W/2 device) AND (first W/2 substrate) AND (heat 0
W/2 sink)) AND phosphorus AND anode AND cathode
Description((LED OR (light W/2 emitting W/2 diode)) AND (same W/2 0
side) AND (adjacent AND NOT oppos!)) AND (IPC-MAIN-CL(H01L
31/12) AND IPC-MAIN-CL(H01L 27/15) AND IPC-MAIN-CL(H01L
33/00))
Assignee(Litesheet) 0
(Litesheet) 0
Assignee(Litesheet) AND (US-Main(257/88) OR US-Main(257/99)) 0
Similarly in non patent search:
led light having anode and cathode terminals on one side of substrate
only
led light having p and n terminals on one side of substrate only
led light having positive and negative terminals on one side of
backing substrate only
led light having silicon based cover and phosphor case for phase shift
Solid state light emitting devices having terminals on one side of PCB
or conductive backing substrate
light emitting diode with adhesive bonded silicon capsulation
1.5 Relevant Patent documents
Patent/ WO 2011/018689 A1
Publication
Number
Title Smart integrated semiconductor light emitting system including
light emitting diodes and application specific integrated circuits
(ASIC)
Granted Date 2011-02-17
Filing Date 2010-08-10
Inventor DOAN, Trung Tri; 3F, No. 11 Ke Jung Rd., (84) Chu-Nan Site,
Hsinchu, Science Park, Chu-Nan 350, Miao-Li County (TW). TAN,
Tien Wei; 3F, No. 11 Ke Jung Rd., Chu-Nan Site, Hsinchu,
Science Park, Chu-Nan 350, Miao-Li County (TW). LIU, Wen
Huang; 3F, No. 11 Ke Jung Rd., Chu-Nan Site, Hsinchu, Science
Park, Chu-Nan 350, Miao-Li County (TW). CHU, Chen Fu; 3F, No.
11 Ke Jung Rd., Chu-Nan Site, Hsinchu, Science Park, Chu-Nan
350, Miao-Li County (TW). CHEN, Yung Wei; 3F, No. 11 Ke Jung
Rd., Chu-Nan Site, Hsinchu, Science Park, Chu-Nan 350, Miao-Li
County (TW).
Assignee Semileds Optoelectronics Co., Ltd. [Cn/Cn]; 3f, No. 11 Ke Jung
Rd., Chu-Nan Site, Hsinchu, Science Park, Chu-Nan 350, Miao-Li
County (Tw).
Abstract A light emitting diode (LED) system includes a substrate, an
application specific integrated circuit (ASIC) on the substrate, and
at least one light emitting diode (LED) on the substrate in
electrical communication with the application specific integrated
circuit (ASIC). The light emitting diode (LED) system can also
include a polymer lens, and a phosphor layer on the lens or light
emitting diode (LED) for producing white light In addition, multiple
light emitting diodes (LEDs) can be mounted on the substrate,
and can have different colors for smart color control lighting. The
substrate and the application specific integrated circuit (ASIC) are
configured to provide an integrated system having smart
functionality. In addition, the substrate is configured to compliment
and expand the functions of the application specific integrated
circuit (ASIC), and can also include built in integrated circuits for
performing additional electrical functions.
Remarks This invention relates generally to light emitting diodes (LED) and
more particularly to systems incorporating light emitting diodes
(LEDs).
Patent Number US 2011/0215342 A1
Title LED packaging with integrated optics and methods of manufacturing
the same (en)
Granted Date 2011-09-08
Filing Date 2011-03-01
Inventor Steven D. Oliver, San Jose, California, United States of America
Assignee Oliver Steven D
Abstract
Methods and structures are provided for wafer-level packaging of
light-emitting diodes (LEDs). An array of LED die are mounted on a
packaging substrate. The substrate may include an array of patterned
metal contacts on a front side. The metal contacts may be in electrical
communication with control logic formed in the substrate. The LEDs
mounted on the packaging substrate may also be encapsulated
individually or in groups and then singulated, or the LEDs mounted on
the packaging substrate may be integrated with a micro-mirror array
or an array of lenses.
Remarks The invention relates generally to light-emitting diode (LED) devices.
In particular, the invention relates to arrays of LEDs integrated with
beam shaping optical elements, such as lenses and/or mirrors and
methods of manufacturing the same.
Patent Number US 2008/0017870 A1
Title Semiconductor light-emitting means and light-emitting panel
comprising the same (en)
Granted Date 2008-01-24
Filing Date 2007-04-03
Inventor Georg Diamantidis, Dernbach, Federal Republic of Germany
Assignee Diamantidis Georg
Abstract A semiconductor light-emitting means (56) comprises a transparent
substrate (12), on which light-emitting diodes (26, 28) are arranged.
These and electrodes (14, 36) used for contacting them are
transparent.
Remarks The invention relates to a semiconductor light-emitting means and to
a light-emitting panel comprising the same.
Patent Number US 2005/0151136 A1
Title Light emitting diode having conductive substrate and transparent
emitting surface (en)
Granted Date 2005-07-14
Filing Date 2004-01-08
Inventor Heng Liu, Sunnyvale, CALIFORNIA , United States of America
Assignee Liu Heng
Abstract A method for forming an LED includes bonding a heat generating
region of a light emitting device to a heat conductive substrate, so as
to define a composite structure and so as to substantially enhance the
heat dissipation. Enhancing heat dissipation from the device facilitates
operation at higher currents, so as to provide greater light output
therefrom.
Remarks The present invention relates generally to semiconductor fabrication
techniques. The present invention relates more particularly to a
method for forming an LED which includes bonding a heat generating
region of a light emitting device to a heat conductive substrate, so as
to substantially enhance heat dissipation therefrom and thus facilitate
operation of the device at higher currents in order to provide greater
light output therefrom.
Patent Number US 7,982,226 B2
Title Reflection type optical sensor device (en)
Granted Date 2011-07-19
Filing Date 2009-05-19
Inventor Yongtak Lee, Gwangju, Republic of Korea; Youngmin Song, Gwangju,
Republic of Korea
Assignee Gwangju Institute of Science and Technology, Gwangju, Republic of
Korea
Abstract Provided is a reflection type optical sensor device including: a
semiconductor light source being formed by providing a light emitting
region on a predetermined region of a substrate; and a photo-
detection element being integrated on the same substrate as the
substrate where the semiconductor light source is formed to surround
an outer circumferential surface of the semiconductor light source,
and including a light receiving region. When the light emitted from the
semiconductor light source is reflected by an external object, the
photo-detection element may detect the light to sense the object.
Through this, it is possible to reduce cost and ensure a small size.
Also, the photo-detection element is constructed to surround the outer
circumferential surface of the semiconductor light source, and thus
more accurately detect the light.
Remarks The present invention relates to a reflection type optical sensor
device, and more particularly, to a reflection type optical sensor
device that may integrate, on a single chip, a semi-conductor light
source and a photo-detection element that are used for a reflection
type optical sensor device, in order to more accurately detect the light.
Patent Number JP 2009-123804 A
Title Semiconductor device, semiconductor device manufacturing method,
power control device, and electronic apparatus and module (en)
Granted Date 2009-06-04
Filing Date 2007-11-13
Inventor Nakajima Soji
Assignee Sharp Corp
Abstract PROBLEM TO BE SOLVED: To provide a semiconductor device
which allows miniaturization and reduces manufacturing cost.
SOLUTION: The semiconductor includes: a solid-state relay 30 having
a first light-emitting element 10, a light trigger device 16 for receiving
light from the first light-emitting element 10, and a translucent resin 23
for sealing the first light-emitting element 10 and the light trigger
device 16; a bidirectional input-type photocoupler 31 having second
and third light-emitting elements 12 and 14 connected in reverse
parallel, a phototransistor 19 for receiving light from the second and
third light-emitting elements 12 and 14, and the translucent resin 23
for sealing the second and third light-emitting elements 12 and 14 and
the phototransistor 19; and a light shielding wall 25 for light-shielding
the solid-state relay 30 and the bidirectional input-type photocoupler
31 from each other. The solid-state relay 30 and the bidirectional
input-type photocoupler 31 are integrated into one package while
light-shielded from each other by the light shielding wall 25.
Remarks In this invention, a semiconductor device, a semiconductor device
manufacturing method, a power control device, and electronic
equipment in module and, more particularly, to a load such as a
lighting device to control the AC power supplied to the semiconductor
device and a manufacturing method of a semiconductor device, and,
using the semiconductor power controlling device, electronic
equipment, module.
Patent Number CN 101300687 A
Title Pigeonhole the membrane of encapsulant including phosphorus in
LED upper strata (en)
Granted Date 2008-11-05
Filing Date 2006-10-17
Inventor Chandra Harryh
Assignee Koninkl Philips Electronics Nv
Abstract The patent refers to the field of 'semiconductor devices and electric
solid state devices'. This invention has described a kind of use
phosphorus carries on the course of LED photic wavelength
conversion. Test LKD fasciolar associated color temperature (CCT),
and launch and pack it into the container according to its color. Install
LED (12) in the single container on single base (24) in order to form
the array of LED. Make various board (51,52,53,54)s of the flexible
encapsulant (for example silicone) full of one or more phosphorus,
among them each boards all have different colors to change
properties. Put the appropriate board (51) on the base (24) LED (12)
installed on the array, and encourage LED (12). Measure photic CCT
got finally. If CCT is acceptable, then presses the permanent stratum
of the phosphor plate (51) onto LED (12) and base (24). Laminate the
(51) and seal each LED (12) in order to protect LED (12) to make it
avoid pollutant and damage. Separate LED (12) in LED array on the
base (24). Through choosing different phosphor plates for each
containers of LED, CCT that is got finally is very even on all
containers.
Remarks This invention involves the luminescent diode (LED), and especially
involves the photic wavelength conversion from LED chip.
Patent Number US 2011/0204391 A1
Title Solid State Light Sheet or Strip Having Cavities Formed in Top
Substrate (en)
Granted Date 2011-08-25
Filing Date 2011-05-03
Inventor Louis Lerman, Las Vegas, Nevada, United States Of America; Allan
Brent York, Langley, Canada; Michael David Henry, Albuquerque,
New Mexico, United States Of America; Robert Steele, Redwood City,
California , United States Of America; Brian D. Ogonowsky, Mountain
View, California , United States Of America
Assignee Quarkstar, Llc, Las Vegas, Nevada, United States Of America
Abstract A solid state light sheet and method of fabricating the sheet are
disclosed. In one embodiment, bare LED chips have top and bottom
electrodes, where the bottom electrode is a large reflective electrode.
The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are
bonded to an array of electrodes formed on a flexible bottom
substrate. Conductive traces are formed on the bottom substrate
connected to the electrodes. A transparent top substrate is then
formed over the bottom substrate. Various ways to connect the LEDs
in series are described along with many embodiments. In one method,
the top substrate contains a conductor pattern that connects to LED
electrodes and conductors on the bottom substrate.
Remarks This invention relates to solid state illumination and, in particular, to a
light sheet containing light emitting dies, such as light emitting diodes
(LEDs), that may be used for general illumination.
Patent Number JP 2010-272721 A
Title Two-wavelength semiconductor laser device (en)
Granted Date 2010-12-02
Filing Date 2009-05-22
Inventor Nagai Hiroki; Kidoguchi Isao; Takayama Toru; Ito Keiji
Assignee Panasonic Corp
Abstract PROBLEM TO BE SOLVED: To provide a two-wavelength
semiconductor laser device including a plurality of laser elements and
having such an optical property that rotation of a polarization angle of
each of the laser elements is small and difference in magnitude of the
rotation angles is small.
SOLUTION: The device includes: a red color laser element 100
including an n-type cladding layer 12, an active layer 13 and a p-type
cladding layer 14; an infrared laser element 110 formed so that the
red color laser element is apart by a division groove 20, including an
n-type cladding layer 22, an active layer 23 and a p-type cladding
layer 24; a first p-side electrode 31 on the p-type cladding layer 14; a
second p-side electrode 32 on the p-type cladding layer 24; and a
sub-mount 38 for firmly fixing the p-side electrodes. When the width
of the first p-side electrode is defined as W1, and the width of the
second p-side electrode is defined as W2, relationship: W1>W2 is
satisfied, and an average strain derived from lattice misfits due to the
n-type cladding layer 22 and the p-type cladding layer 24 of the
infrared laser element is larger than that derived from lattice misfits
due to the n-type cladding layer 12 and the p-type cladding layer 14
of the red color laser element.
Remarks The present invention, a wavelength in a semiconductor laser device,
in particular red laser light and infrared laser wavelength can output
light of a semiconductor laser device.
6 Non patent Web information:
We performed a search on Google and found a few links that were
remarkably close to the aspects of the disclosure provided to us. The
first link discloses most aspects of the disclosure provided to us such as
effective heat dissipation, p and n electrode sharing a common dielectric
layer etc. The second link discloses LED light systems having silicon
based cover and phosphor case for phase shifting the red, green or blue
wavelengths of light into white light.
1. http://www.cmoset.com/uploads/
GaN_HB_LEDs_The_Inside_Story.pdf
2. http://iopscience.iop.org/1468-6996/8/7-8/A08/pdf/
STAM_8_7-8_A08.pdf